Abstract: A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors, and a neutron irradiation. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, a temperature of the thermal process, and an irradiation dose of the neutron irradiation.

Abstract: As typically embodied, the inventive method features bombardment of atomic nuclei with 3He ions in order to effect transmutation of atoms from a first atomic element to a second atomic element. Two notable inventive genres describe transmutation of: oxygen to nitrogen in an oxygen-containing target (e.g., including ZnO film); and, carbon to boron in a carbon-containing target (e.g., including SiC film). According to the former, transmutation of 16O to 15N occurs; more specifically, transmutation of 16O to 15O occurs via nuclear bombardment, and then transmutation of 15O to 15N occurs via decay by positron emission. According to the latter, transmutation of 12C to 11B occurs; more specifically, transmutation of 12C to 11C occurs via nuclear bombardment, and then transmutation of 11C to 11B occurs via decay by positron emission.

Abstract: Thermal neutron irradiation of superconducting body compositions into which Li or B has been incorporated as a unit cell external or internal dopant introduces by the nuclear reaction of the dopant pinning centers which substantially improve the critical current density of the body.

Abstract: The invention pertains to a transport system for transporting containers or products within and along an essentially vertical tube with concurrent rotation of the containers on the axis of the tube. In order to facilitate simple construction despite conditions of limited space, it is proposed that the tube be designed as a vertical rotary tube, to which a rotatably retained worm sleeve is connected at the end of the transport path. Provided within the rotary tube are longitudinal guide grooves, in which dogs carried by the containers engage. These dogs also engage in the screw thread of the worm sleeve. On their upper and lower sides, the containers have couplings, e.g., an end toothing, which, during the transport of a group of adjoining containers, impart a rotary movement from container to container but also make possible a separation of one container from another in the direction of the axis of the tube.

Abstract: A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.

Abstract: A high resistance semiconductor substrate body with a thin low resistance active semiconductor layer thereon is generated by a method including the steps of subjecting the semiconductor substrate body to neutron bombardment to a degree which produces high resistance in the semiconductor body and whereby doping substances are generated in the substrate body by the thermal neutron bombardment. A thin low resistant active semiconductor layer is then generated on the substrate body by annealing, a surface of the semiconductor substrate body up to a selected depth by laser radiation or electron radiation such that the lattice deterioration which was caused by the neutron bombardment is eliminated but the doping which was generated by the transmutation of elements during neutron bombardment remains. The annealing can be undertaken only in selected regions on the surface of the semiconductor substrate body, thereby facilitating the construction of integrated circuit components thereon.

Abstract: A method for controlling dopant variation in neutron silicon is provided wherein the selection of undoped single crystal silicon for neutron transmutation doping is based upon certain criteria, for example, a maximum dopant difference which depends only on the desired uniformity of the neutron doped material and a maximum average dopant concentration which is a function of the homogeneity of both the undoped single crystal silicon and the neutron doped product. The results achievable from using the method for controlling dopant variation in the neutron doped silicon provides uniformity of the neutron doped product determinable by the correct choice of dopant difference and dopant factor, and that the doping precision for the radiated silicon does not depend on the doping factor.