Cadmium Base Patents (Class 420/525)
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Publication number: 20150125338Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.Type: ApplicationFiled: March 12, 2012Publication date: May 7, 2015Inventors: Heather Murdoch, Christopher A. Schuh
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Publication number: 20150064483Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.Type: ApplicationFiled: September 3, 2014Publication date: March 5, 2015Inventors: Mark E. Thompson, Francisco F. Navarro
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Publication number: 20150011749Abstract: Metal-accumulating plants for preparing compositions including a metal catalyst derived from the plants. The composition is substantially devoid of organic matter. Also, carrying out chemical reactions with the compositions prepared from metal-accumulating plants.Type: ApplicationFiled: March 5, 2013Publication date: January 8, 2015Applicants: UNIVERSITE MONTPELLIER 2 SCIENCES ET TECHNIQUES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUEInventors: Claude Grison, Vincent Escande
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Publication number: 20140348203Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.Type: ApplicationFiled: May 20, 2014Publication date: November 27, 2014Applicant: Massachusetts Institute of TechnologyInventors: Heather A. Murdoch, Christopher A. Schuh
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Publication number: 20140332733Abstract: Provided herein are nanofibers and processes of preparing nanofibers. In some instances, the nanofibers are metal and/or ceramic nanofibers. In some embodiments, the nanofibers are high quality, high performance nanofibers, highly coherent nanofibers, highly continuous nanofibers, or the like. In some embodiments, the nanofibers have increased coherence, increased length, few voids and/or defects, and/or other advantageous characteristics. In some instances, the nanofibers are produced by electrospinning a fluid stock having a high loading of nanofiber precursor in the fluid stock. In some instances, the fluid stock comprises well mixed and/or uniformly distributed precursor in the fluid stock. In some instances, the fluid stock is converted into a nanofiber comprising few voids, few defects, long or tunable length, and the like.Type: ApplicationFiled: August 30, 2012Publication date: November 13, 2014Applicant: CORNELL UNIVERSITYInventors: Yong Lak Joo, Nathaniel S. Hansen, Daehwan Cho
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Publication number: 20140326849Abstract: A mechanical structure is provided with a crystalline superelastic alloy that is characterized by an average grain size and that exhibits a martensitic phase transformation resulting from a mechanical stress input greater than a characteristic first critical stress. A configuration of the superelastic alloy is provided with a geometric structural feature of the alloy that has an extent that is no greater than about 200 micrometers and that is no larger than the average grain size of the alloy. This geometric feature undergoes the martensitic transformation without intergranular fracture of the geometric feature.Type: ApplicationFiled: September 13, 2012Publication date: November 6, 2014Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: Christopher A. Schuh, Jose M. San Juan, Ying Chen
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Patent number: 8802151Abstract: The instant invention relates to shaped transition metal particles, in particular in the form of a dispersion in an aqueous and/or organic medium, the manufacture thereof and their use as an infrared (IR) absorbing agent, an IR curing agent for coatings, an additive in conductive formulations, an antimicrobial agent or for sensoring organic and/or inorganic compounds. Further, the invention relates to dispersions comprising said shaped particles and an aqueous and/or organic medium, such as a thermoplastic or crosslinkable polymer, as well as to antimicrobial compositions and products.Type: GrantFiled: March 17, 2010Date of Patent: August 12, 2014Assignee: BASF SEInventors: Nikolay A. Grigorenko, Michael Muehlebach, Florian Muehlebach
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Patent number: 8784703Abstract: A method of making a colloidal solution of high confinement semiconductor nanocrystals includes: forming a first solution by combining a solvent, growth ligands, and at most one semiconductor precursor; heating the first solution to the nucleation temperature; and adding to the first solution, a second solution having a solvent, growth ligands, and at least one additional and different precursor than that in the first solution to form a crude solution of nanocrystals having a compact homogenous semiconductor region. The method further includes: waiting 0.5 to 20 seconds and adding to the crude solution a third solution having a solvent, growth ligands, and at least one additional and different precursor than those in the first and second solutions; and lowering the growth temperature to enable the formation of a gradient alloy region around the compact homogenous semiconductor region, resulting in the formation of a colloidal solution of high confinement semiconductor nanocrystals.Type: GrantFiled: October 18, 2011Date of Patent: July 22, 2014Assignee: Eastman Kodak CompanyInventors: Keith Brian Kahen, Matthew Holland, Sudeep Pallikkara Kuttiatoor
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Publication number: 20130273247Abstract: A method for preparing semiconductor nanocrystals is disclosed. The method comprises adding a precursor mixture comprising one or more cation precursors, one or more anion precursors, and one or more amines to a ligand mixture including one or more acids, one or more phenol compounds, and a solvent to form a reaction mixture, wherein the molar ratio of (the one or more phenol compounds plus the one or more acids plus the one or more amine compounds) to the one or more cations initially included in the reaction mixture is greater than or equal to about 6, and heating the reaction mixture at a temperature and for a period of time sufficient to produce semiconductor nanocrystals having a predetermined composition. Methods for forming a buffer layer and/or an overcoating layer thereover are also disclosed. Semiconductor nanocrystals and compositions including semiconductor nanocrystals of the invention are also disclosed.Type: ApplicationFiled: June 7, 2013Publication date: October 17, 2013Inventors: Justin W. KAMPLAIN, Zhengguo ZHU
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Publication number: 20130178047Abstract: A population of semiconductor nanocrystals can include cores including a II-V semiconductor material, e.g., Cd3As2. The population can be monodisperse and can have a quantum yield of 20% or greater. A size-series of populations can have emission wavelengths falling in the range of about 530 nm to about 2000 nm.Type: ApplicationFiled: January 11, 2012Publication date: July 11, 2013Inventors: Daniel K. Harris, Moungi G. Bawendi
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Publication number: 20120283336Abstract: The instant invention relates to shaped transition metal particles, in particular in the form of a dispersion in an aqueous and/or organic medium, the manufacture thereof and their use as an infrared (IR) absorbing agent, an IR curing agent for coatings, an additive in conductive formulations, an antimicrobial agent or for sensoring organic and/or inorganic compounds. Further, the invention relates to dispersions comprising said shaped particles and an aqueous and/or organic medium, such as a thermoplastic or crosslinkable polymer, as well as to antimicrobial compositions and products.Type: ApplicationFiled: March 17, 2010Publication date: November 8, 2012Applicant: BASF SEInventors: Nikolay A. Grigorenko, Andreas Muehlebach, Michael Muehlebach, Florian Muehlebach
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Publication number: 20120000776Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.Type: ApplicationFiled: September 19, 2011Publication date: January 5, 2012Applicant: PRIMESTAR SOLAR, INC.Inventor: Scott Daniel Feldman-Peabody
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Patent number: 7056471Abstract: The present invention relates to nanocrystals consisting of a homogeneous ternary or quaternary alloy having the composition M11-xM2xA and M11-xM2xAyB1-y, respectively, a process for its production, as well as to uses of such nanocrystals such as as short wavelength light-emitting devices, and in the detection of analytes, in particular biomolecules.Type: GrantFiled: December 16, 2002Date of Patent: June 6, 2006Assignee: Agency for Science Technology & ResearchInventors: Mingyong Han, Xinhua Zhong, Wolfgang Knoll
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Patent number: 6617583Abstract: A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a “barcode” comprising one or more sizes of semiconductor nanocrystals (quantum dots) having characteristic spectral emissions, to either “track” the location of a particular item of interest or to identify a particular item of interest. The semiconductor nanocrystals used in the inventive “barcoding” scheme can be tuned to a desired wavelength to produce a characteristic spectral emission in narrow spectral widths, and with a symmetric, nearly Gaussian line shape, by changing the composition and size of the quantum dot. Additionally, the intensity of the emission at a particular characteristic wavelength can also be varied, thus enabling the use of binary or higher order encoding schemes.Type: GrantFiled: September 24, 1998Date of Patent: September 9, 2003Assignee: Massachusetts Institute of TechnologyInventors: Moungi G. Bawendi, Klavs F. Jensen
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Patent number: 6306736Abstract: A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.Type: GrantFiled: February 4, 2000Date of Patent: October 23, 2001Assignee: The Regents of the University of CaliforniaInventors: A. Paul Alivisatos, Xiaogang Peng, Liberato Manna
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Patent number: 6225198Abstract: A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.Type: GrantFiled: February 4, 2000Date of Patent: May 1, 2001Assignee: The Regents of the University of CaliforniaInventors: A. Paul Alivisatos, Xiaogang Peng, Liberato Manna
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Patent number: 5225157Abstract: An amalgam and a method of preparing an amalgam for bonding two articles together, which includes mixing a composition of a liquid metal and a metal powder to thoroughly wet the metal powder with the liquid metal, and thereafter mixing a composition with a pestle element for mechanically amalgamating the composition. Other additives may be provided such as ductile metals, additives containing oxides, ceramics, or other non-metallic compounds, and volatile constituents. The amalgamated composition can then wet surfaces to be bonded and harden at or near room temperature.Type: GrantFiled: May 16, 1991Date of Patent: July 6, 1993Assignee: Microelectronics and Computer Technology CorporationInventor: Colin A. McKay
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Patent number: 4852142Abstract: An alloy filter in the form of a plate made from a homogeneous alloy comprising 85-95 wt. % cadmium, 5-15 wt. % copper and up to 3 wt. % of incidental impurities is interposed between a collimator and sodium iodide crystal of a gamma camera. The alloy filter improves image resolution by allowing the passage only of emmissions which impinge substantially perpendicularly on the collimator, while filtering out others which impinge obliquely.Type: GrantFiled: May 5, 1988Date of Patent: July 25, 1989Inventors: Marrimuthoo Pillay, Rajgopal S. Menon
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Patent number: 4726858Abstract: A recording material made of an alloy capable of exhibiting different spectral reflectances at an equal temperature, depending on a heating-cooling cycle to which the alloy is subjected. The alloy can possess in solid state different crystal structures at a first temperature higher than the room temperature and at a second temperature lower than the first temperature but not lower than the room temperature. A part of the surface of the alloy exhibits, as a result of being quenched from the first temperature, a crystal structure which is different from the crystal structure at the second temperature, while the other part possesses the crystal structure at the second temperature, so that these two parts exhibit different spectral reflectances. Using this recording medium, it is possible to record, reproduce and erase information by means of, for example, laser beams.Type: GrantFiled: August 22, 1984Date of Patent: February 23, 1988Assignee: Hitachi, Ltd.Inventors: Tetsuro Minemura, Hisashi Ando, Isao Ikuta, Yoshiaki Kita
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Patent number: 4721656Abstract: A coating for metallic faces comprising an alloy of aluminum with at least one of zinc, cadmium or manganese is proposed, whereby the alloy coating is applied onto the metal surface by means of electrodeposition using a non-aqueous electrolyte. The electrolyte comprises toluene as a solvent for chlorides of the alloy components. The coating may be used e.g. for corrosion protection.Type: GrantFiled: May 16, 1986Date of Patent: January 26, 1988Assignee: Eltech Systems CorporationInventors: Christopher J. Vance, Thinh Nguyen
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Patent number: 4654196Abstract: Process for the preparation of a polycrystalline alloy for producing monocrystals by passage in a solvent zone.The compound is completely melted by heating it to a temperature above its melting point and for a time sufficient for the homogenization of the liquid. This is followed by a cooling of the liquid by bringing it to a temperature below the melting point thereof. The sudden rise of the temperature occurring at the end of the superfusion of the liquid is monitored and the mixture then undergoes sudden tempering bringing about the instantaneous solidification of the entity in the form of a homogeneous polycrystalline ingot.Type: GrantFiled: July 29, 1985Date of Patent: March 31, 1987Assignee: Commissariat A l'Energie AtomiqueInventors: Alain Fillot, Jean Gallet, Sylvain Paltrier, Bernard Schaub
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Patent number: 4582683Abstract: An alloy for use in production of electromagnetic radiation detectors comprises (Hg,Cd,Zn,)Te for producing crystals with dislocation densities less than about 10.sup.4 cm.sup.-2. The elements are combined in accordance with the formula (Hg.sub.1-x-y Cd.sub.x Zn.sub.y)Te where x is about 10 to about 90 and y is about 0.6 to about 5.0 mole percent.Type: GrantFiled: December 3, 1984Date of Patent: April 15, 1986Assignee: Texas Instruments IncorporatedInventor: Luigi Colombo
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Patent number: 4462959Abstract: Controllable doping of HgCdTe in concentrations low enough to be useful for electronic devices is accomplished by dissolving the desired dopant in mercury at or below the solubility limit. The mercury is then diluted with pure mercury, to lower the dopant concentration to that which will produce the desired impurity concentration in the end product. The doped mercury is then compounded according to conventional methods, to produce reproducibly doped HgCdTe of uniform composition.Type: GrantFiled: April 5, 1982Date of Patent: July 31, 1984Assignee: Texas InstrumentsInventor: John H. Tregilgas
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Patent number: 4447393Abstract: The problem of CdTe sticking to quartz boats is avoided by preventing any presence of cadmium oxides in the as-compounded CdTe. This is accomplished by distilling the cadmium under a high vacuum immediately prior to the CdTe compounding step.Type: GrantFiled: February 9, 1983Date of Patent: May 8, 1984Assignee: Texas Instruments IncorporatedInventor: Donald F. Weirauch