Abstract: A display device includes a first area in which one or more first pixels are disposed, and a second area surrounded by the first area and in which one or more second pixels are disposed. The second area includes a first sensor area corresponding to a first sensor, and a second sensor area corresponding to a second sensor. Each of the first sensor area and the second sensor area includes a blocking layer different from each other.

Abstract: A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.

Abstract: Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A metal containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. A metal is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.

Abstract: A negative electrode active material for an electric device includes an alloy containing Si in a range from greater than or equal to 17% by mass to less than 90% by mass, Ti in a range from 10% by mass to 83% by mass exclusive, Ge in a range from 0% by mass to 73% by mass exclusive, and inevitable impurities as a residue. The negative electrode active material can be obtained with a multi DC magnetron sputtering apparatus by use of, for example, Si, Ti and Ge as targets. An electric device employing the negative electrode active material can achieve long cycle life, and ensure a high capacity and improved cycle durability.

Abstract: Many known solder alloys according to prior art utilize silicon or boron as melting point reducers, which, however, form brittle phases that have an undesirable effect on the thermo-mechanical properties. The invention relates to a solder ally that comprises gallium and/or germanium, preferably forms the Y? phase and has improved mechanical properties.

Abstract: Detectors based on such Ge(Sn) alloys of the formula Ge1-xSnx (e.g., 0<x<0.01) have increased responsivity while keeping alloy scattering to a minimum. Such small amounts of Sn are also useful for improving the performance of the recently demonstrated Ge-on-Si laser structures, since the addition of Sn monotonically reduces the separation between the direct and indirect minima in the conduction band of Ge. Thus, provided herein are Ge(Sn) alloys of the formula Ge1xSnx, wherein x is less than 0.01, wherein the alloy is optionally n-doped or p-doped; and assemblies and photodiodes comprising the same, and methods for their formation.

Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A method of producing a powder of crystalline germanium.

Abstract: A clathrate compound of formula (I): M8AxBy-x (I) wherein: M is an alkaline earth metal, a rare earth metal, an alkali metal, Cd, or a combination thereof, A is Ga, Al, In, Zn or a combination thereof; B is Ge, Si, Sn, Ni or a combination thereof; and 12?x?16, 40?y?43, x and y each is or is not an integer. Embodiments of the invention also include method of making and using the clathrate compound.

Abstract: There is provided a sintered body that does not readily deform during use and that allows a high flexibility for the design of surface layers, a method for manufacturing the sintered body, and an optical component including the sintered body. The method for manufacturing a sintered body includes a sintered body having a predetermined shape, the sintered body having a ceramic base material, the method for manufacturing a sintered body comprising a step for preparing a ceramic preform, a step for using a predetermined mold having an upper die and a lower die to hot-press the ceramic preform to form a pressure-sintered body, and a step for cooling the pressure-sintered body while applying a pressure load of approximately 5% or more and 100% or less (and preferably approximately 20% or more and 40% or less) of the pressure load applied during the step for forming the pressure-sintered body.

Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.

Abstract: The invention relates to methods of making articles of semiconducting material on a mold comprising semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells.

Abstract: Methods of the present invention can be used to synthesize nanowires with controllable compositions and/or with multiple elements. The methods can include coating solid powder granules, which comprise a first element, with a catalyst. The catalyst and the first element should form when heated a liquid, mixed phase having a eutectic or peritectic point. The granules, which have been coated with the catalyst, can then be heated to a temperature greater than or equal to the eutectic or peritectic point. During heating, a vapor source comprising the second element is introduced. The vapor source chemically interacts with the liquid, mixed phase to consume the first element and to induce condensation of a product that comprises the first and second elements in the form of a nanowire.

Abstract: A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.

Abstract: A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed.

Abstract: Thin film coating for transferring antistatic characteristics to the surface on which it is placed, in particular antenna surfaces, in order to prevent electrical charge accumulations on it and discharge phenomenon.

Abstract: The present invention provides nanowires which are substantially straight and substantially free of nanoparticles and methods for making the same The nanowires can be made by seeded approaches, wherein nanocrystals bound to a substrate are used to promote growth of the nanowire. Nanocrystals in solution may also be used to make the nanowires of the present invention. Supercritical fluid reaction conditions can be used in a continuous or semi-batch process.

Abstract: BaAuGe, BaAuGaGe, BaPtGe, BaPdGe, BaPdGaGe, BaPdGaSi, BaPtGaSi, BaCuGaGe, and BaAgGaGe clathrate compounds, and thermoelectric conversion element comprising the clathrate compounds. Methods for producing thermoelectric conversion elements are also provided, comprising melting, heat-treating, particle-forming, and sintering processes.

Abstract: An phase-change optical disk comprises a substrate, a first protective layer, a first thermostable layer, a recording layer, a second thermostable layer, a second protective layer, an absorptance control layer, and a heat-diffusing layer which are provided in this order from a side on which a laser beam comes thereinto, wherein a recording layer material has composition ratios which are within a range surrounded by composition points of B3 (Bi3, Ge46, Te51), C3 (Bi4, Ge46, Te50), D3 (Bi5, Ge46, Te49), D5 (Bi10, Ge42, Te48), C5 (Bi10, Ge41, Te49), and B5 (Bi7, Ge41, Te52) on a triangular composition diagram. Recrystallization is not caused even when information is recorded on an inner circumferential portion, a reproduced signal is scarcely deteriorated even when rewriting is performed multiple times, and any erasing residue of amorphous matters scarcely appears at an outer circumferential portion.

Abstract: A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a “barcode” comprising one or more sizes of semiconductor nanocrystals (quantum dots) having characteristic spectral emissions, to either “track” the location of a particular item of interest or to identify a particular item of interest. The semiconductor nanocrystals used in the inventive “barcoding” scheme can be tuned to a desired wavelength to produce a characteristic spectral emission in narrow spectral widths, and with a symmetric, nearly Gaussian line shape, by changing the composition and size of the quantum dot. Additionally, the intensity of the emission at a particular characteristic wavelength can also be varied, thus enabling the use of binary or higher order encoding schemes.

Abstract: This invention relates to a high temperature melting composition and a method of using the composition for brazing high temperature niobium-based substrates, such as niobium-based refractory metal-intermetallic compositions (RMIC), including but not restricted to niobium-silicide composite alloys. The high temperature melting composition can include one or more alloys. The alloys include a base element selected from titanium, tantalum, niobium, hafnium, silicon, and germanium. The alloys also include at least one secondary element that is different from the base element. The secondary element can be selected from chromium, aluminum, niobium, boron, silicon, germanium and mixtures thereof. When two or more alloys are included in the composition, it is preferable, but not required, to select at least one lower melting alloy and at least one higher melting alloy. The composition is preferably a homogeneous mixture of the two or more alloys combined in powder form.

Abstract: Sn.sub.x Ge.sub.1-x alloys that are substantially free of compositional inhomogeneities and Sn segregation, and have a measurable direct band gap. Methods for making the Sn.sub.x Ge.sub.1-x alloys are also disclosed.

Abstract: The present invention relates to a single source metalloorganic precursor compound of the formula:(2-NR-Q-).sub.l M-A.sub.m (I=0-4, m=0-4, l+m=2 or 4)wherein M is selected form the Group 14 elements of Germanium, Tin or Lead;A and R are independently selected from: amide, alkyl having from 1 to 20 carbon atoms, aryl, substituted aryl, or -Q'-2-NR'L.sub.n (n=1-4) wherein L is selected from nothing or a Lewis base ligand;Q and Q' are each independently selected from Group VIa elements of sulfur, selenium, or tellurium; and2-NR and 2-NR' are each independently selected from N-heterocyclic aryl or its derivatives.Methods of producing these compounds are also disclosed. These precursor materials provide in a single compound the binary, tertiary, or quaternary metals in a ratio to each other that is controllable by a judicious choice of metal atoms and organic substituents. The metal alloys are useful in a variety for electronic applications, particularly in semiconductors and solar energy.

Abstract: A solder material that is especially suitable for the fluxless hard soldering of aluminum-based components consists of an aluminum-based alloy that especially contains about 10 to 50 wt. % of germanium, about 1 to 12 wt. % of silicon, about 0.1 to 3 wt. % of magnesium, and about 0.1 to 3 wt. % of indium. The solder material is useful at soldering temperatures in the range from 424.degree. to about 600.degree. C., and is therefore especially suitable for the fluxless hard soldering of components made of precipitation-hardened high-strength aluminum-based materials.

Abstract: A low melting (liquidus temperature <570.degree. C.) rapidly solidified brazing alloy consists essentially of about 14 to 52 weight percent germanium, 0 to 10 weight percent of at least one element selected from the group consisting of silicon, magnesium, bismuth, strontium, lithium, copper, calcium, zinc and tin, the balance being aluminum and incidental impurities. The alloy has the form of a foil and can be used to braze non-heat-treatable rapidly solidified Al-Fe-Si-V alloy foil, sheet plate and tubing to components such as deicing duct, overduct, radiator, heat exchanger, evaporator, honeycomb panel for elevated temperature applications.

Abstract: Alloys of hydrogenated amorphous silicon and germanium are disclosed that exhibit unexpectedly low saturated defect densities, particularly relative to the initial defect densities of the alloys, so as to render them substantially resistant to Staebler-Wronski degradation. The alloys are producible using conventional equipment, but glow-discharge methods are preferred. The preferred amount of germanium in the alloy is about 15 at. % to about 50 at. %. The alloys are particularly useful for making photovoltaic cells. The alloys can be used as intrinsic semiconductors and doped for use as "n" or "p" materials. Methods for making the alloys are also disclosed.

Abstract: A low melting (liquidus temperature<570.degree. C.) rapidly solidified brazing alloy consists essentially of about 14 to 52 weight percent germanium, 0 to 10 weight percent of at least one element selected from the group consisting of silicon, magnesium, bismuth, strontium, lithium, copper, calcium, zinc and tin, the balance being aluminum and incidental impurities. The alloy has the form of a foil and can be used to braze non-heat-treatable rapidly solidified Al-Fe-Si-V alloy foil, sheet plate and tubing to components such as deicing duct, overduct, radiator, heat exchanger, evaporator, honeycomb panel for elevated temperature applications.

Abstract: A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Abstract: The present invention discloses a semiconductor device comprising a semiconductor layer being made of monocrystalline silicon or silicon-germanium alloy and a semiconductor layer being made of silicon-germanium-carbon alloy formed thereon, wherein the two layers form a heterojunction therebetween. In such a device, no lattice mismatch occurs between the layers or even if lattice mismatch occurs, it is only slight, so that the silicon-germanium-carbon alloy layer is in no danger of causing misfit dislocation therein.

Abstract: A process for manufacturing a silicon-germanium alloy comprising introducing SiH.sub.4 gas, GeCl.sub.4 gas and P-type or N-type doping gas into a reaction vessel, heating a substrate up to a temperature not lower than 750.degree. C., and depositing a thickly-grown, bulky silicon-germanium alloy upon the substrate within the reaction vessel.

Abstract: An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

Abstract: A thermoelectric alloy composition is described comprising from 5% to 95% silicon, from 95% to 5% Germanium, from 0.01% to 0.2% lead and from 0% to 0.2% tin, all percentages being atomic percentages. In a preferred composition at least 50% silicon and 50% Germanium is present with 0.03% to 0.1% lead and from 0 to 0.05% tin. Tin and lead in combination provide lower thermal conductivity and a greater figure of merit than with lead or tin alone. Other preferred compositions are provided and a thermoelectric material and a p-n coupling thermoelectric generator (10) incorporating the alloy is disclosed. The alloy composition provides high efficiency of power to heat loss and minimizes running costs.

Abstract: A method of making a metalloid precursor powder is disclosed, which powder avoids impurity localization and is effective to produce an improved fine grained ceramic body. A metalloid melt is formed and rapidly solidified into particles having a particle size distribution of 2-50 microns; the particles are cooled at a rate to distribute impurities or additive metal ingredients substantially uniformly throughout the solidifed particles with spacing between localizations being substantially in the range of 1-25 microns and the size of each localization being one micron or less. The cooling rate is preferably equal to or greater than 10.sup.5 .degree. C./second.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap adjusting elements and dopants into the alloys and devices in layers and/or clusters. The dopants and adjusting element or elements are added to the amorphous devices containing silicon and at least one reducing element, such as hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as tin or nitrogen along with conventional dopants. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.

Abstract: A new crystalline modification of germanium is described, as well as a method of manufacturing it. This new crystalline germanium modification has an orthorhombic structure and graphite-like properties.