Abstract: In one embodiment, a physical vapor deposition device includes a phase change material sputtering target includes a primary matrix and at least one additional phase. The primary matrix includes at least one element from Group VI of the periodic table excluding oxygen and one or more elements from Group IV or Group V of the periodic table. The additional phase is substantially homogenously dispersed in the primary matrix.

Abstract: Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more: (A) one or more chalcogenide elements selected from S, Se, and Te; (B) one or more Vb-group elements selected from Bi, Sb, As, P, and N; and (C) one or more IVb-group elements or IIIb-group elements selected from Ge, Si, C, Ga, and In. Also provided is a technology enabling stable DC sputtering, and stable and high-speed sputtering by applying high electric power, by improving heat accumulation and diffusion of volatile components due to the sputtering target having high thermal conductivity and low electric resistivity.

Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.

Abstract: A method of manufacturing a thermoelectric material comprising: ball-milling a compound comprising a plurality of components, the first component M comprising at least one of a rare earth metal, an actinide, an alkaline-earth metal, and an alkali metal, the second component T comprising a metal of subgroup VIII, and the third component X comprises a pnictogen atom. The compound may be ball-milled for up to 5 hours, and then thermo-mechanically processed by, for example, hot pressing the compound for less than two hours. Subsequent to the thermo-mechanical processing, the compound comprises a single filled skutterudite phase with a dimensionless figure of merit (ZT) above 1.0 and the compound has a composition following a formula of MT4X12.

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.

Abstract: The present invention addresses the problem of providing a novel, sold metal alloy. Provided is a metal alloy containing two or more types of metal, wherein an equilibrium diagram of the metal alloy shows the two or more types of metal in a finely mixed state at the nanolevel in a specific region where the two types of metal are unevenly distributed. This metal alloy has a substitutional solid solution of the two or more types of metal as the principal constituent thereof. This metal alloy is preferably one obtained by precipitation after mixing ions of two or more types of metal and a reducing agent in a thin-film fluid formed between processing surfaces, at least one of which rotates relative to the other, which are arranged so as to face one another and are capable of approaching and separating from one another.

Abstract: Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.

Abstract: A method is presented for fabricating an anode preloaded with consumable metals. The method provides a material (X), which may be one of the following materials: carbon, metals able to be electrochemically alloyed with a metal (Me), intercalation oxides, electrochemically active organic compounds, and combinations of the above-listed materials. The method loads the metal (Me) into the material (X). Typically, Me is an alkali metal, alkaline earth metal, or a combination of the two. As a result, the method forms a preloaded anode comprising Me/X for use in a battery comprising a M1YM2Z(CN)N·MH2O cathode, where M1 and M2 are transition metals. The method loads the metal (Me) into the material (X) using physical (mechanical) mixing, a chemical reaction, or an electrochemical reaction. Also provided is preloaded anode, preloaded with consumable metals.

Abstract: The disclosure relates to a p-type skutterudite material and a method of making the same, comprising providing a p-type skutterudite material having a general formula: IyFe4-xMxSb12/z(J) wherein I represents one or more filling atoms in a skutterudite phase, the total filling amount y satisfying 0.01?y?1; M represents one or more dopant atoms with the doping amount x satisfying 0?x?4; J represents one or more second phases with the molar ratio z satisfying 0?z?0.5; wherein second phase precipitates are dispersed throughout the skutterudite phase.

Abstract: An inorganic, intermetallic compound contains at least two elements per formula unit and consists of at least two phases, at least one phase being semiconducting or semimetallic, these at least two phases are immiscible with each other and are thermodynamically stable, so as to allow the thermal conductivity of semi-Heusler alloys to be reduced while at the same time maintaining the electrical conductivity and the thermoelectric voltage.

Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.

Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

Abstract: A method for producing an intermetallic compound, the method comprising: (1) providing components A, B and X; and forming by solid state reaction of components A, B and X an intermetallic compound having a filled skutterudite structure and formula of AaBbXc; (2) melting the intermetallic compound having a filled skutterudite structure produced in step (1) in the presence of additional X; and (3) annealing the intermetallic compound of step (2) in the presence of additional X at a temperature equal to, or greater than the phase formation temperature of the intermetallic compound.

Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.

Abstract: Interstitial voids of the cubic CoSb3 type skutterudite structure can be filled with sodium and/or potassium atoms. Such filled skutterudites have the general formulas, KyCo4Sb12 and NayCo4Sb12, where y indicates the filling fraction of potassium and sodium, respectively, in the CoSb3 cubic crystal structure, and has a value greater than zero and less than one. Also sodium-filled and/or potassium-filled skutterudites of the general formula, (K, Na)yT4Pn12 are made, where T denotes Fe, Ru, Os, Co, Rh, or Ir; and “Pn” denotes one of the pnicogen elements P, As, or Sb. Again, y has values less than one.

Abstract: A composition suitable for use as a target containing antimony to be irradiated by accelerated charged particles (e.g., by protons to produce tin-117m) comprises an intermetallic compound of antimony and titanium which is synthesized at high-temperature, for example, in an arc furnace. The formed material is powdered and melted in an induction furnace, or heated at high gas pressure in gas static camera. The obtained product has a density, temperature stability and heat conductivity sufficient to provide appropriate target material.

Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

Abstract: A thermoelectric material and a method of fabricating a thermoelectric material are provided. The thermoelectric material includes a compound having an elemental formula of A1?xB1+yC2+z and having a coefficient of thermal expansion greater than 20 parts-per-million per degree Celsius in at least one direction at one or more operating temperatures. The A component of the compound includes at least one element selected from the group consisting of: at least one Group Ia element and at least one Group Ib element, the B component of the compound includes at least one element selected from the group consisting of: at least one Group V element and at least one Group VIII element, and the C component of the compound includes at least one Group VI element. In addition, x is between ?0.2 and 0.3, y is between ?0.2 and 0.4, and z is between ?0.2 and 0.8.

Abstract: The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

Abstract: A multiphase composite material having utility as an electrochemical electrode or catalyst includes a first active phase which is an amorphous, electrochemically active material; and a second, stabilizer phase which includes one or more of: metals, carbon, ceramics, and intermetallic compounds. The stabilizer phase is configured as a plurality of spaced apart regions having the active phase disposed therebetween. The active phase may comprise one or more of: Sn, Sb, Bi, Pb, Ag, In, Si, Ge, and Al. The stabilizer phase may include one or more of: Fe, Zr, Ti, and C. Also disclosed are electrodes and batteries which include the material as well as methods for manufacturing the material by using a mechanical alloying process.

Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4?xAxSb3?yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Abstract: A process for producing an electrode material for a rechargeable lithium battery, comprising the steps of mixing a metal compound (a) of a metal (a′) capable of being electrochemically alloyed with lithium, a transition metal compound (b) of a transition metal (b′) and a complexing agent (c) with a solvent (d) to obtain a mixed solution, mixing a reducing agent (e) with said mixed solution to obtain a mixture, and oxidizing said reducing agent in said mixture to reduce ion of said metal (a′) and ion of said transition metal (b′) to obtain an amorphous alloy material capable of being electrochemically alloyed with lithium as said electrode material. An electrode structural body in which said electrode material is used, and a rechargeable lithium battery in which said electrode material is used.

Abstract: An optical recording medium which comprises a substrate and a recording layer disposed on the substrate, in which the recording layer comprises Ga and Sb, a content of the Sb is 80 atm % to 95 atm % relative to a total content of the Ga and the Sb in the recording layer, and recording and erasing are carried out by a reversible phase change between an amorphous phase and a crystalline phase in the recording layer.

Abstract: The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

Abstract: A solder composition that bonds well to oxides and other surfaces to which solder bonding is conventionally difficult is provided. The solder is particularly useful for reliable bonding and packaging of optical components that often have oxide surfaces. The solder composition exhibits a microstructure containing a solder matrix in which is distributed fine, micron-scale islands of rare-earth-containing intermetallic particles. The existence of the islands makes the rare earth elements better available for bonding, and reduce the extent to which the rare earths are oxidized. Advantageously, the solder contains Au and/or Ag, in which the rare earth elements tend to have some solid solubility. Due to this solubility, the Au and/or Ag tend to provide some additional protection of the rare earths against oxidation, and thereby also provide accelerated dissolution of the rare earth into the molten solder.

Abstract: The invention provides an article comprising a solder that bonds well to oxides and other surfaces to which solder bonding is problematic. The solder composition contains one or more rare earth elements, which react with the oxide or other surface to promote bonding, and further contains sufficient Au and/or Ag to act as carriers for the rare earths. Because rare earths have some solid solubility in Au and Ag, the problem of intermetallic formation is lessened or eliminated, and improved bonding to oxide surfaces is attained.

Abstract: A fuel catalyst for improving combustion efficiency is provided that includes at least one hydride producing element, and at least one element of greater activity on the electrolytic scale than the hydride producing element and at least one element of lesser activity on the electrolytic scale than the hydride producing element. The hydride producing element preferably includes an element from at least one of a Group IV and Group V of the periodic table. The element of greater activity and the element of lesser activity preferably includes at least one of zinc, magnesium, aluminum, palladium, silver, copper and cerium. Preferred formulations of the catalyst element include: a) 20-60% wt antimony, 10-30% wt tin, 10-80% wt zinc and 1-5% wt silver; b) 40% wt antimony, 18% wt tin, 40% wt zinc and 2% wt silver; c) 20-60% wt antimony, 10-30% wt tin, 20-80% wt magnesium, 1-8% wt cerium and 0.1-1.0% wt palladium; d) 40% wt antimony, 25 % wt tin, 30% wt magnesium, 4.8% wt cerium and 0.

Abstract: The present invention relates to an alloy comprising a first element A, a second element B, a third element C, and a fourth element D. In the alloy, first element A and second element B are present as a binary compound AB, and third element C and fourth element D are present as a binary compound CD. In addition, the alloy is substantially free from binary compounds AD, BC, AC, and BD. These alloys can be characterized as semiconducting, quasi-binary, single phase alloys having the formula (AB)x(CD)1−x, where x is between 0 and 1 and where A, B, C, and D are different. The present invention also relates to a method of producing an alloy. The method includes providing a first binary material AB and providing a second binary material CD. The first binary material AB and the second binary material CD are contacted under conditions effective to mix the first binary material AB and the second binary material CD without decomposing either the first binary material AB or the second binary material CD.

Abstract: Thermoelectric material for high temperature use made of a sintered body of a relative density of at least 75% consisting mainly of cobalt antimony compounds having an elemental ratio Sb/(Co+additives)=x of 2.7<x<3 is produced by a method of firing a shaped body of powders consisting mainly of cobalt and antimony in a non-oxidizing atmosphere under an environmental pressure, wherein the shaped body before the firing is constituted from crystal phases composed of a cubic crystal system compound CoSb.sub.3 (A phase), a monoclinic crystal system compound CoSb.sub.2 (B phase) and a hexagonal crystal system compound CoSb (C phase), and constitutional ratio of these crystal phases is (I.sub.B +I.sub.C)/(I.sub.A +I.sub.B +I.sub.C)<0.15 (wherein, I.sub.X (X is A, B or C) is a relative intensity by X-ray diffraction).

Abstract: A sputtering target contains a target material including as constituent elements Ag, In, Te and Sb with the respective atomic percents (atom. %) of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 0.5.ltoreq..alpha.<8, 5.ltoreq..beta..ltoreq.23, 17.ltoreq..gamma..ltoreq.38, 32.ltoreq..delta..ltoreq.73, .alpha..ltoreq..beta., and .alpha.+.beta.+.gamma.+.delta.=100, and a method of producing the above sputtering target is provided. An optical recording medium includes a recording layer containing a phase-change recording material which includes as constituent elements Ag, In, Te and Sb with the respective atomic percents of .alpha., .beta., .gamma. and .delta. thereof being in the relationship of 1.ltoreq..alpha.<6, 7.ltoreq..beta..ltoreq.20, 20.ltoreq..gamma..ltoreq.35, 35.ltoreq..delta..ltoreq.70, and .alpha.+.beta.+.gamma.+.delta.=100, and is capable of recording and erasing information by utilizing the phase change of the recording material in the recording layer.

Abstract: An amorphous alloy containing uranium and a member selected from the group of N, P, As, Sb, Bi, S, Se, Te, Po and mixtures thereof; and use thereof for storage medium, light modulator or optical isolator.

Abstract: Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Abstract: The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.

Abstract: An information recording medium is disclosed which records information through the transition of two phases of a recording material, utilizing electromagnetic wave energy. The information recording medium comprises a recording layer made up of a recording material of a composition represented by the formula:wherein6.ltoreq..alpha..ltoreq.138.ltoreq..beta..ltoreq.1718.ltoreq..gamma..ltoreq.2845.ltoreq..delta..ltoreq.66.alpha.+.beta.+.gamma.+.delta.=100.

Abstract: Lewis base-borane complexes such as (CH.sub.3).sub.2 S.BHBr.sub.2 are utilized as molecular precursors for the formation of both bulk powders, films and coatings of boron nitride. The complexes are subjected to slow heating under an ammonia atmosphere to displace the base and pyrolyze the resulting complex to BN. Analogous processes may be used to prepare Group IIIA-VA compounds of the formula MM' where M is selected from the group consisting of B, Al, Ga, In, and Tl, and M' is selected from the group consisting of N, P, As, Sb and Bi.

Abstract: The electrical contact alloy is provided comprising Sb and either Au or Ag or both. In such alloys, Sb produces a non-catalytic effect to inhibit formation of carbon from organic gases derived from resin parts. Therefore, when electrical contacts of such alloys are assembled with resin parts into housings, poor contact due to carbon deposition is prevented to increase the useful life and reliability of the electrical contacts.

Abstract: There is disclosed an antimony, tin and indium alloy which contains an additional element. The additional element is selected from the group consisting of titanium, aluminum, magnesium, manganese, silver, bismuth, germanium, lead, tellurium, gold, zinc, copper, palladium, nickel, iron, cobalt, and cadmium. The additional element substantially reduces arcing during the sputtering process used to make optical recording layers from the alloy.

Abstract: An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.

Abstract: A method of synthesizing amorphous Group IIIA-Group VA compounds. A first solution is prepared which consists of a tris(trialkylsilyl) derivative of either a Group IIIA or Group VA element dissolved in an organic solvent. A second solution is then prepared which consists of a halide of the other of the Group IIIA or Group VA element dissolved in an organic solvent. Then the first and second solutions are mixed such that a Group IIIA-Group VA compound is formed along with a trialkylhalosilane by-product. The final step of the method consists of removing the trialkylhalosilane by-product and organic solvent mixture to form the Group IIIA-Group VA condensed phase.

Abstract: The invention provides a grain refinement method for copper-based metals, which method can be applied to a range of different types of such metals. In accordance with the method, one arranges that a melt of the metal to be grain refined contains each of the following components:(a) titanium and/or zirconium;(b) at least one of: lithium, sodium, potassium, beryllium, magnesium, calcium, strontium and barium;(c) at least one of: scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, silver, gold, zinc, cadmium, mercury and the rare earth elements; and(d) at least one of: aluminium, gallium, indium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, bismuth, sulphur, selenium and tellurium;and solidifies the melt to produce grain refinement of the copper-based metal. The invention also provides grain refiners for practicing the method.

Abstract: An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

Abstract: A method for electroplating a nickel-antimony alloy comprising from 1-70 weight percent antimony and the balance nickel comprises electroplating the alloy from a solution containing a soluble nickel salt and a soluble mixed antimony alkali metal salt of a polybasic organic acid at a pH in the range of about from 1 to 6. The substrate to be plated is made the cathode and an inert anode is employed.

Abstract: A method of producing III-V materials by reducing a complex salt in a hydrogen atmosphere is shown. For example, complex salts reduce to InP or GaAs. The salts are conveniently prepared by coprecipitation from a salt solution or by other methods. The stoichiometry can be modified by applying an overpressure of the more volatile element or elements during reduction.