Nitrogen And Hydrogen Containing Patents (Class 423/284)
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Publication number: 20150099108Abstract: A process for producing a hard material layer on a substrate includes depositing a TiCNB hard material layer by chemical vapor deposition (CVD) from a gas system including a titanium source, a boron source, at least one nitrogen source and at least one carbon source, in which the carbon source includes an alkane having at least two carbon atoms, an alkene or an alkyne. A cutting tool includes a substrate to which a TiCNB hard material layer has been applied, in which a ratio of carbon atoms (C) to nitrogen atoms (N) in the TiCxNyB1-x-y system deposited on the substrate is 0.70?X?1.0, preferably 0.75?X?0.85, and a polished section through the substrate and the hard material layer is substantially free of an eta phase following Murakami etching.Type: ApplicationFiled: February 25, 2013Publication date: April 9, 2015Inventor: Christoph Czettl
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Patent number: 8999023Abstract: A composite sintered body according to the present invention contains at least cubic boron nitride and a binder. Cubic boron nitride has a continuous skeleton structure as a result of bonding of a plurality of first cubic boron nitride particles to each other. The binder has a continuous structure as a result of bonding of a plurality of binder particles to each other, that are present in a region except for a bonding interface where the first cubic boron nitride particles are bonded to each other. Second cubic boron nitride particles isolated from the first cubic boron nitride particles forming the skeleton structure are dispersed in the continuous structure of the binder particles.Type: GrantFiled: May 28, 2007Date of Patent: April 7, 2015Assignee: Sumitomo Electric Hardmetal Corp.Inventors: Katsumi Okamura, Satoru Kukino, Tomohiro Fukaya
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Patent number: 8951318Abstract: A composite sintered body according to the present invention contains at least cubic boron nitride and a binder. Cubic boron nitride has a continuous skeleton structure as a result of bonding of a plurality of first cubic boron nitride particles to each other. The binder has a continuous structure as a result of bonding of a plurality of binder particles to each other, that are present in a region except for a bonding interface where the first cubic boron nitride particles are bonded to each other. Second cubic boron nitride particles isolated from the first cubic boron nitride particles forming the skeleton structure are dispersed in the continuous structure of the binder particles.Type: GrantFiled: May 28, 2007Date of Patent: February 10, 2015Assignee: Sumitomo Electric Hardmetal Corp.Inventors: Katsumi Okamura, Satoru Kukino, Tomohiro Fukaya
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Patent number: 8920760Abstract: The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.Type: GrantFiled: April 13, 2010Date of Patent: December 30, 2014Assignee: Sigma-Aldrich Co. LLCInventors: Viktor Balema, Kanth Josyula, Guolin Xu, Nathaniel Wallock, Scott Batcheller, Peng Gao, Shashi Jasty
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Patent number: 8883371Abstract: Hydrogen storage materials are provided that may be capable of a hydrogenated state and dehydrogenated state. The hydrogen storage material comprises a plurality of hydrogen storage molecular units. Each hydrogen storage molecular unit comprises a transition metal bonded to one or more elements from period 2 of the periodic table, wherein the hydrogen storage material includes at least 6.5% molecular hydrogen by weight when in the hydrogenated state and is stable at temperatures below about 200° C. and at pressures of about 1 atm and below. The hydrogen storage materials may be used in conjunction with fuel cells in portable electronic devices.Type: GrantFiled: October 16, 2007Date of Patent: November 11, 2014Assignee: Motorola Mobility LLCInventors: Joydeep Bhattacharjee, Kota V. R. M. Murali
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Patent number: 8709377Abstract: The present invention relates to a process for reversible hydrogen storage, to a material for reversible hydrogen storage and to the use of the material for reversible hydrogen storage.Type: GrantFiled: April 15, 2008Date of Patent: April 29, 2014Assignee: Universitat HeidelbergInventors: Hans-Jörg Himmel, Elisabeth Kaifer, Oxana Ciobanu, Pascal Roquette, Walter Siebert
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Publication number: 20140114074Abstract: The invention relates to a process for the preparation of alkali-metal salts with dihydridodicyanoborate anions by reaction of alkali-metal tetrahydridoborates or trihydridocyanoborates with trialkylsilyl cyanide and further reaction thereof in metathesis reactions.Type: ApplicationFiled: May 23, 2012Publication date: April 24, 2014Applicant: MERCK PATENT GmbHInventors: Nikolai (Mykola) Ignatyev, Michael Schulte, Eduard Bernhardt, Vera Bernhardt-Pitchougina, Helge Willner
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Patent number: 8591613Abstract: An uncoated abrasive or superabrasive grain having at least one grain face including three or more features projecting from the grain face wherein the height (h) and the lateral length (l) of each feature is greater than about 0.1 micron.Type: GrantFiled: September 16, 2009Date of Patent: November 26, 2013Assignee: Diamond Innovations, Inc.Inventors: Kai Zhang, Rajeev Pakalapati, John William Lucek
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Patent number: 8349223Abstract: Boronated polyphosphinohydrazide fire retardants are provided having the basic structural unit: wherein, Y is O or S; R can be selected from H, alkyl (e.g., linear, branched, saturated, or unsaturated), aryl, heterocyclic, cycloaliphatic (e.g., saturated or unsaturated), or a metallocene (e.g., ferrocene, zirconocene or the like); and n can be selected from 1 to 500.Type: GrantFiled: September 21, 2009Date of Patent: January 8, 2013Assignee: The Boeing CompanyInventors: Norman R. Byrd, Douglas G. Soden, Arthur Rojo
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Publication number: 20120301382Abstract: The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.Type: ApplicationFiled: April 13, 2010Publication date: November 29, 2012Applicant: SIGMA ALDRICH CO. LLCInventors: Viktor Balema, Kanth Josyula, Guolin Xu, Nathaniel Wallock, Scott Batcheller, Peng Gao, Shashi Jasty
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Patent number: 8283497Abstract: The present invention relates to novel tricyanoborates of the general formula Catn+[B(CN)3(XR1)]—n, wherein R1 is C1-6 alkyl, C2-6 alkenyl, C6-10 aryl or benzyl; X is oxygen or sulfur; and Catn+ is a cation with n being 1 or 2, which is selected from the group consisting of an inorganic cation and an organic cation; and also their preparation and use.Type: GrantFiled: January 26, 2010Date of Patent: October 9, 2012Assignee: Lonza Ltd.Inventors: Wolfgang Wenger, Cornelia Zur Taschler
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Patent number: 8168342Abstract: A method of producing NH2(R2), the method comprising reacting a metal hydride with a compound having the general formula: M1X(BH4)y(NH2(R2))n wherein M1 comprises one or more of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, La, Al, Ga and Sc; 0<n?4; R2 comprises —H, alkyl and an aromatic substituent; and x and y are selected so as to maintain electroneutrality.Type: GrantFiled: July 9, 2007Date of Patent: May 1, 2012Assignee: The Science and Technology Facilities CouncilInventors: Martin Owen Jones, Simon R. Johnson, Peter P. Edwards, William I. f David
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Patent number: 7846410Abstract: Method of producing ammonia borane, comprising providing polyborazylene; digesting the polyborazylene with a dithiol-containing agent to produce a boro-sulfide compound and a byproduct; converting the byproduct to the boro-sulfide product of step (b) by reaction with a first alkyl-tin hydride; and, converting the boro-sulfide compound produced in steps (b) and (c) to ammonia borane by reaction with a second alkyl-tin hydride.Type: GrantFiled: January 14, 2009Date of Patent: December 7, 2010Assignee: Los Alamos National Security, LLCInventors: Benjamin L. Davis, John C. Gordon
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Patent number: 7834212Abstract: A process is provided for producing a porous substance, which is lightweight, and has a highly developed pore structure and an excellent gas absorbability, by dehydrogenating a compound having two or more amine-borane adduct structures per molecule.Type: GrantFiled: December 6, 2007Date of Patent: November 16, 2010Assignee: Nippon Oil CorporationInventors: Shinji Oshima, Yoshihiro Kobori
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Patent number: 7741254Abstract: Pressureless sintered high density materials containing hexagonal boron nitride have low coefficients of friction and high wear resistance and are useful for bearings, bushings and other articles subjected to bearing loads.Type: GrantFiled: August 21, 2007Date of Patent: June 22, 2010Inventors: Romain L. Billiet, Hanh T. Nguyen
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Patent number: 7718154Abstract: This idea relates to the synthesis of salts of dodecahydrododecaborate B12H12 (2-). In the proposed process a metal hydride is reacted with an alkyl borate in the presence of a Lewis base to produce Lewis base-borane compex, which is thermally decomposed to produce salts of B12H12 (2-), while alkyl borare is recovered from the reaction by-product and is recycled.Type: GrantFiled: June 7, 2006Date of Patent: May 18, 2010Assignee: Air Products and Chemicals, Inc.Inventors: Sergei Vladimirovich Ivanov, Baldomero Casas
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Patent number: 7713506Abstract: Metal aminoboranes of the formula M(NH2BH3)n have been synthesized. Metal aminoboranes are hydrogen storage materials. Metal aminoboranes are also precursors for synthesizing other metal aminoboranes. Metal aminoboranes can be dehydrogenated to form hydrogen and a reaction product. The reaction product can react with hydrogen to form a hydrogen storage material. Metal aminoboranes can be included in a kit.Type: GrantFiled: May 7, 2008Date of Patent: May 11, 2010Assignee: Los Alamos National SecurityInventors: Anthony K. Burrell, Benjamin J. Davis, David L. Thorn, John C. Gordon, R. Thomas Baker, Troy Allen Semelsberger, William Tumas, Himashinie Vichalya Kaviraj Diyabalanage, Roshan P. Shrestha
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Patent number: 7695704Abstract: A process for producing borazane from boron-nitrogen and boron-nitrogen-hydrogen containing BNH-waste products. The process includes reacting the BNH-waste products with a hydrogen halide, having the formula HX, wherein X is selected from the group consisting of F, Cl, Br, I, and combinations thereof, to form any of the following: a boron trihalide, having the formula BX3, an ammonium halide, having the formula NH4X, and hydrogen. The boron trihalide is then reacted with the hydrogen to form diborane, having the formula B2H6, and hydrogen halide. The ammonium halide is then converted to ammonia, having the formula NH3, and hydrogen halide. The diborane is then reacted with the ammonia to form borazane, having the formula BH3NH3.Type: GrantFiled: February 13, 2007Date of Patent: April 13, 2010Assignees: GM Global Technology Operations, Inc., Albert Ludwigs Universitat FreiburgInventors: Gert Wolf, Felix Baitalow, Gerhard Roewer, Steffen Hausdorf, Gerd Arnold, Ulrich Eberle, Dieter Hasenauer, Florian O. Mertens
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Publication number: 20100065785Abstract: A composition of voltage switchable dielectric (VSD) material that comprises Boron. According to embodiments, VSD material is formulated that includes particle constituents that include one or more of Boron-nitride polymers, Boron nanotubes, and/or Boron nanoparticles.Type: ApplicationFiled: September 16, 2009Publication date: March 18, 2010Inventors: Lex Kosowsky, Robert Fleming
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Publication number: 20100064594Abstract: An uncoated abrasive or superabrasive grain having at least one grain face including three or more features projecting from the grain face wherein the height (h) and the lateral length (l) of each feature is greater than about 0.1 micron.Type: ApplicationFiled: September 16, 2009Publication date: March 18, 2010Applicant: DIAMOND INNOVATIONS, INC.Inventors: Rajeev Pakalapati, Kai Zhang, John W. Lucek
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Patent number: 7645902Abstract: A method of dehydrogenating an amine-borane using an acid-catalyzed reaction. The method generates hydrogen and produces a solid polymeric [R1R2B—NR3R4]n product. The method of dehydrogenating amine-boranes may be used to generate H2 for portable power sources.Type: GrantFiled: June 22, 2006Date of Patent: January 12, 2010Assignee: Los Alamos National Security, LLCInventors: Frances Helen Stephens, Ralph Thomas Baker
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Publication number: 20090274605Abstract: The invention relates to a continuous silazane cleavage method, especially for use in the production of molecular precursors for non-oxidic inorganic ceramics.Type: ApplicationFiled: December 13, 2005Publication date: November 5, 2009Applicant: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e. V.Inventors: Martin Jansen, Grigorios Kolios, Britta Jaeschke
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Patent number: 7544837Abstract: A method of dehydrogenating an amine-borane having the formula R1H2N—BH2R2 using base metal catalyst. The method generates hydrogen and produces at least one of a [R1HN—BHR2]m oligomer and a [R1N—BR2]n oligomer. The method of dehydrogenating amine-boranes may be used to generate H2 for portable power sources, such as, but not limited to, fuel cells.Type: GrantFiled: October 30, 2006Date of Patent: June 9, 2009Assignee: Los Alamos National Security, LLCInventors: Johanna Marie Blacquiere, Richard Jeffrey Keaton, Ralph Thomas Baker
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Publication number: 20090035516Abstract: Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.Type: ApplicationFiled: July 31, 2008Publication date: February 5, 2009Inventors: Youn-Joung Cho, Jung-Ho Lee, Jun-Hyun Cho, Seung-Min Ryu, Kyoo-Chul Cho, Jung-Sik Choi
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Publication number: 20080311017Abstract: Metal aminoboranes of the formula M(NH2BH3)n have been synthesized. Metal aminoboranes are hydrogen storage materials. Metal aminoboranes are also precursors for synthesizing other metal aminoboranes. Metal aminoboranes can be dehydrogenated to form hydrogen and a reaction product. The reaction product can react with hydrogen to form a hydrogen storage material. Metal aminoboranes can be included in a kit.Type: ApplicationFiled: May 7, 2008Publication date: December 18, 2008Inventors: Anthony K. Burrell, Benjamin J. Davis, David L. Thorn, John C. Gordon, R. Thomas Baker, Troy Allen Semelsberger, William Tumas, Himashinie Vichalya Kaviraj Diyabalanage, Roshan P. Shrestha
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Publication number: 20080248636Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.Type: ApplicationFiled: August 30, 2006Publication date: October 9, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: W. Karl Olander, Jose I. Arno, Robert Kaim
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Patent number: 7070751Abstract: The present invention provides a reactor for the gas-phase reaction of commercially available gases in the presence of an inert carrier gas to form product gas. The reactor has a streamlined, compact configuration and at least one solids collection and removal system downstream of the reactor, where solids are efficiently removed from the product gas stream, leaving high purity product gas. The removal system allows for a simple reactor design, which is easy to clean and operates continuously over longer periods of time.Type: GrantFiled: November 14, 2003Date of Patent: July 4, 2006Assignee: Bristol-Myers Squibb Co.Inventors: Srinivas Tummala, Shun Wang Leung, Ehrlic T. Lo, Mario Moisés Alvarez
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Publication number: 20040208812Abstract: The present invention relates to a method for making boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. This method involves pressing high purity, hexagonal boron nitride having an average platelet size of at least 2 microns into a compacted form, sintering the compacted form of boron nitride to form a sintered body, and crushing the sintered body under conditions effective to produce boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s. Another aspect of the present invention relates to boron nitride powder having a thermal diffusivity of from about 0.14 cm2/s to about 0.20 cm2/s.Type: ApplicationFiled: May 11, 2004Publication date: October 21, 2004Inventor: Thomas M. Clere
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Publication number: 20020058142Abstract: There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.Type: ApplicationFiled: August 31, 2001Publication date: May 16, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Sei Tsunoda, Hideharu Nobutoki, Noboru Mikami
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Publication number: 20010033964Abstract: The invention relates to a process for the preparation of borate salts, and to their use in electrochemical cells.Type: ApplicationFiled: January 12, 2001Publication date: October 25, 2001Applicant: Merck Patent Gesellschaft mit Beschrankter HaftungInventors: Udo Heider, Michael Schmidt, Andreas Kuehner, Andrea Schmenger
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Patent number: 5502142Abstract: Direct thermal syntheses in the absence of catalyst, of poly(borazylenes) and of oligomers of borazine with polyhedral boranes, carboranes or heteroboranes are disclosed. The products of these syntheses are precursors to BN or other boron-containing ceramics.Type: GrantFiled: October 26, 1993Date of Patent: March 26, 1996Assignee: The Trustees of the University of PennsylvaniaInventors: Larry G. Sneddon, Jeffrey S. Beck, Paul J. Fazen
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Patent number: 5489673Abstract: Highly iodinated borane and carborane cage molecules, having from 60% to 90% w/w iodine, are disclosed as new and useful X-ray contrast media when combined with a pharmaceutically acceptable carrier. The inclusion of appropriate functional group substituents, such as hydrophilic moieties, increases solubility and lowers toxicity.Type: GrantFiled: August 16, 1993Date of Patent: February 6, 1996Assignee: University of WashingtonInventor: D. Scott Wilbur
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Patent number: 5316986Abstract: Novel boron/nitrogen compounds having the formula (1): ##STR1## and the products of the at least partial reduction thereof, are converted into BN ceramic materials by thermally polymerizing same, whether or not in the presence of suitable polymerization catalyst, and then pyrolyzing the boron/nitrogen polymers thus obtained.Type: GrantFiled: May 17, 1993Date of Patent: May 31, 1994Assignee: Rhone-Poulenc ChimieInventors: Christiane Blanchard, Evelyne Chassagneux, Gerard Mignani, Michel Vaultier
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Patent number: 5292830Abstract: A thermoplastic silicon-containing polymer, which may be a precursor of SiC, and which can be transformed to a thermosetting polymer by copolymerizing it with a thermosetting perhydropolysilazane or polyborosilazane.Type: GrantFiled: June 18, 1992Date of Patent: March 8, 1994Assignee: Tonen CorporationInventors: Osamu Funayama, Tomohiro Kato, Rika Takatsu, Yuuji Tashiro, Toshihide Kishi, Takayuki Date, Takeshi Isoda
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Patent number: 5256394Abstract: A method of imaging a corporeal situs by radiological techniques, comprising delivery to the corporeal situs of an imagingly effectively amount of a physiologically acceptable composition comprising a boron reagent. A variety of illustrative boron reagents is described, including iodinated boron salts, and boron-containing cyclophosphazene and polyphosphazene reagents having radiopaque character. The reagents and method of the present invention may be employed for a wide variety of radiological imaging applications, e.g., excretory urography, angiocardiography, and aortography.Type: GrantFiled: October 23, 1991Date of Patent: October 26, 1993Assignee: Boron Biologicals, Inc.Inventor: Bernard F. Spielvogel
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Patent number: 5169613Abstract: The invention relates to the synthesis of ammonia-haloboranes, and in particular, H.sub.3 NBH.sub.2 Cl, which materials are useful for the produciton of amorphous boron nitride and crystalline turbostratic boron nitride by heating.Type: GrantFiled: February 6, 1991Date of Patent: December 8, 1992Assignee: The Ohio State University Research FoundationInventors: Sheldon G. Shore, Philipp M. Niedenzu, Allison L. DeGraffenreid
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Patent number: 5053365Abstract: The invention relates to an energy efficient method for the production of boron nitride materials at temperatures of from about 100 degrees to about 230 degrees Centigrade. The boron nitride materials produced by the present invention are carbon-free and are prepared by combining at reduced pressure an alkali metal, such as potassium, rubidium, cesium, or mixtures thereof, or a potassium/sodium mixture, with a boron-, nitrogen-, and halogen-containing material, such as a haloborazine, haloborazane, or haloaminoborane. The preferred boron-, nitrogen-, and halogen-containing materials are trihalogenated, the preferred halogen is chlorine, and the preferred alkali metal is cesium.Type: GrantFiled: February 28, 1990Date of Patent: October 1, 1991Assignee: The Ohio State University Research FoundationInventors: Sheldon G. Shore, Shawn E. Dolan
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Patent number: 5026809Abstract: Preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine of the formulaR.sup.1 R.sup.2 N--(E).sub.q --NR.sup.4 R.sup.5,where R.sup.1, R.sup.2, R.sup.4 and R.sup.Type: GrantFiled: June 2, 1989Date of Patent: June 25, 1991Assignee: Massachusetts Institute of TechnologyInventors: Seyferth Dietmar, William S. Rees, Jr.
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Patent number: 5021134Abstract: A method for the production of a nitride of zirconium, hafnium, silicon, germanium, tin, lead, boron, aluminium, gallium, indium or thallium either alone or as mixtures is claimed. Ammonia and a halide of at least one of these elements are heated by means of a direct electric current plasma in a non-oxidizing gas in a reactor in which recirculation is induced such that the defined recirculation ratio is greater than 2.5 and preferably greater than 4.0. Any titanium halide present shall be less then 40% by weight of mixed halides.Type: GrantFiled: May 4, 1990Date of Patent: June 4, 1991Assignee: Tioxide Group PLCInventors: Stephen R. Blackburn, Anthony G. Jones
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Patent number: 4871826Abstract: New soluble preceramic polymers formed by reacting B.sub.10 H.sub.14-n R.sub.n, (where R is a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, or a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, and n is a number from zero to about six) with a diamine in an organic solvent are disclosed. Preferably the diamine has the formulaR.sup.1 R.sup.2 N-R.sup.3 -NR.sup.4 R.sup.5where R.sup.1, R.sup.2, R.sup.4 and R.sup.5 are H, a lower alkyl group having from 1 to about 8 carbon atoms, a substituted or unsubstituted cycloalkyl group having from 3 to about 8 carbon atoms, a substituted or unsubstituted lower alkenyl group having from 2 to about 8 carbon atoms, a substituted or unsubstituted lower aryl group having from 6 to about 10 carbon atoms, or a di- or triorganosilyl. R.sup.Type: GrantFiled: June 22, 1987Date of Patent: October 3, 1989Assignee: Massachusetts Institute of TechnologyInventors: Dietmar Seyferth, William S. Rees, Jr.
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Patent number: 4801404Abstract: A novel suspension of boric acid comprising a concentrated, finely dispersed suspension of boric acid and a small amount of a soluble borate salt in an aqueous medium and a method of preparing the same.Type: GrantFiled: September 11, 1987Date of Patent: January 31, 1989Assignee: Rutgerswerke AGInventors: Wolf Dietrich, Volker Beez, Eberhard Giebeler
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Patent number: 4801439Abstract: A process for preparing tractable preceramic precursors of Group IIIA metal/Group VA nonmetal compounds, such as BN, in which a first reactant containing a Group VA nonmetal to hydrogen bond, such as ammonia or an amine is reacted with a second reactant containing a Group IIIA metal to hydrogen bond, such as a metal hydride, in the presence of a metal catalyst that catalyzes dehydrocoupling of the bonds to form the precursor. Further reaction of the precursor in the presence of the catalyst forms oligomeric/polymeric forms of the precursor.Type: GrantFiled: September 15, 1986Date of Patent: January 31, 1989Assignee: SRI InternationalInventors: Yigal D. Blum, Richard M. Laine
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Patent number: 4676962Abstract: The present invention relates to a method of preparing B-trichloroborazine, B.sub.3 N.sub.3 Cl.sub.3 H.sub.3. Generally, the method includes the combination of gaseous boron trichloride in an anhydrous aprotic organic solvent followed by addition of excess gaseous ammonia at ambient temperature or below. The reaction mixture is heated to between about 100.degree. to 140.degree. C. followed by cooling, removal of the solid ammonium chloride at ambient temperature, distillation of the solvent under vacuum if necessary at a temperature of up to about 112.degree. C., and recovery of the B-trichloroborazine. Solvents include, toluene, benzene, xylene, chlorinated hydrocarbons, chlorinated aromatic compounds, or mixtures thereof. Toluene is a preferred solvent. The process provides a convenient synthesis of a material which often decomposes on standing. B-trichloroborazine is useful in a number of chemical reactions, and particularly in the formation of high temperature inorganic polymers and polymer precursors.Type: GrantFiled: August 28, 1986Date of Patent: June 30, 1987Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Salvatore R. Riccitiello, Ming-Ta S. Hsu, Timothy S. Chen
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Patent number: 4662801Abstract: This invention relates to a tool for use in carrying out a cutting process, and more particularly to a cutting tool formed so that it can be sued to cut an iron material of a high hardness and thereby obtain a mirror-polished surface thereon, the cutting tool being characterized in that it is formed by attaching a monocrystal of boron nitride to the tip thereof so that predetermined surface and orientation of the crystal are set suitably. To be concrete, the present invention is directed to a cutting tool in which monocrystalline boron nitride is used for a tip which forms a blade of the cutting tool, (111) surface of this boron nitride being used as a relief surface of the blade, <211> direction being used as a cutting direction; or a cutting tool of the same material, in which (100) surface of the boron nitride is used as a relief surface of the blade, <110> direction being used as a cutting direction.Type: GrantFiled: December 6, 1985Date of Patent: May 5, 1987Assignee: Hitachi, Ltd.Inventors: Masakazu Kondou, Takashi Nishiguchi
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Patent number: 4623479Abstract: Quaternary ammonium borohydrides of the formula ##STR1## wherein R.sup.1, R.sup.2 and R.sup.3 may be same or different and each is selected from alkyl, alkenyl, cycloalkyl, aryl, alkaryl and aralkyl groups and R.sup.4 is selected from alkyl and alkenyl groups having from 1 to 30 carbon atoms, with the proviso that R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are not all alkyl or that R.sup.1, R.sup.2 or R.sup.3 is not benzyl when the remainder of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are all methyl or ethyl. The new borohydrides are prepared by either mixing a borohydride salt and a quaternary ammonium salt in alkaline aqueous solution and extracting the resulting quaternary amine borohydride with an organic solvent or by reacting finely divided borohydride salt with an organic solution of quaternary ammonium salt. The new compounds are used for foaming polyester resins.Type: GrantFiled: August 20, 1984Date of Patent: November 18, 1986Assignee: Fiberglas Canada Inc.Inventors: Helena Z. Kucharska, Thomas M. Burton
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Patent number: 4550186Abstract: A compound of the formula[Cu(R.sub.3 NBH.sub.2 CO.sub.2).sub.2. R.sub.3 NBH.sub.2 CO.sub.2 H].sub.2wherein each R independently represents H, C.sub.1 -C.sub.10 alkyl, or phenyl and L represents a non-toxic Lewis base capable of forming a coordinate bond with the copper with the provisos that any two or three R attached to the same nitrogen may represent a C.sub.4 -C.sub.5 alkylene group containing up to 2 non-cumulative double bonds optionally having 1 or 2 carbons replaced by oxygen or nitrogen, that any 3 R attached to the same nitrogen when taken together with the nitrogen may represent a 6-membered aromatic ring containing 1, 2 or 3 nitrogen atoms, and that any R containing a carbon atom may be substituted with a hydroxyl, ether, ester, carboxyl, or amino functional group is disclosed along with methods of making these compounds and methods of using these compounds as antihyperlipidemic agents and antineoplastic agents.Type: GrantFiled: July 11, 1983Date of Patent: October 29, 1985Assignee: Duke UniversityInventors: Andrew T. McPhail, Bernard F. Spielvogel, Iris H. Hall
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Patent number: 4301129Abstract: A process for the preparation of compounds of the formula RBH.sub.3 CN wherein R is an alkali metal, a quaternary ammonium radical or a phosphonium radical wherein a compound of the formula RCN is treated with a stoichiometric amount or slightly less than a stoichiometric amount of a BH.sub.3 donor is described. The final products are useful as hydrolysis stable reductants and as synthetic intermediates.Type: GrantFiled: November 12, 1980Date of Patent: November 17, 1981Assignee: Thiokol CorporationInventors: Robert C. Wade, Benjamin C. Hui
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Patent number: 4209510Abstract: Preparation of the crystalline complex [Na{NH.sub.3.BH.sub.2 -(CN)}.sub.6 from NMe.sub.3.BH.sub.2 I and NaCN in liquid NH.sub.3 is disclosed. Structural details of this novel octahedral complex are obtained by single-crystal X-ray analysis. Evidence indicates that the complex is a valuable antiarthritic agent, since it completely inhibits bacteria-induced chronic arthritis in rats with no evidence of toxic effects. The complex also possesses analgesic and anti-inflammatory activity.Type: GrantFiled: November 14, 1978Date of Patent: June 24, 1980Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Bernard F. Spielvogel, Andrew T. Mc Phail, Iris H. Hall, Patty Wisian-Neilson, Karl D. Hargrave
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Patent number: 4006066Abstract: Hydrogen-fluoride-containing gases from the electrolytic production of aluminum are subjected to electrostatic precipitation to remove dust particles containing substances which are deleterious to aluminum production before the gases are treated in an expanded bed with alumina on which the hydrogen fluoride is adsorbed. Following the dry adsorption in the expanded bed, the gases entraining the adsorbent particles are subjected to electrostatic precipitation in which the particles are separated from the gas thus freed from hydrogen fluoride. The particles are recycled to the electrolytic aluminum production apparatus, the particles being free from the deleterious substances which have previously been removed.Type: GrantFiled: January 22, 1975Date of Patent: February 1, 1977Assignees: Vereinigte Aluminum-Werke Aktiengesellschaft, Metallgesellschaft AktiengesellschaftInventor: Volker Sparwald