Abstract: A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix.

Abstract: A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.

Abstract: A method and system define a magnetoresistive junction in a magnetic recording transducer. The method and system include performing a first mill at a first angle from a normal to the surface of the magnetic recording transducer. A second mill is performed at a second angle from the normal to the surface. The second angle is larger than the first angle. A third mill is performed at a third angle from the normal to the surface. The third angle is not larger than the first angle.

Abstract: A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

Abstract: A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

Abstract: The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.

Abstract: A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk?(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.

Abstract: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

Abstract: A magnetoresistive element that includes a free ferromagnetic layer comprising a reversible magnetization directed substantially perpendicular to a film surface, a pinned ferromagnetic layer comprising a fixed magnetization directed substantially perpendicular to the film surface, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the free and pinned layers contain at least one element selected from the group consisting of Fe, Co, and Ni, at least one element selected from the group consisting of V, Cr, and Mo, and at least one element selected from the group consisting of B, P, C, and Si, and wherein the free layer, the tunnel barrier layer, and the pinned layer have a coherent body-centered cubic structure with a (001) plane oriented, and a bidirectional spin-polarized current passing through the coherent structure in a direction perpendicular to the film surface reverses a magnetization direction of the free layer.

Abstract: A magnetic tunnel junction stack including a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), a free magnetic layer adjacent to the tunnel barrier layer, and a layer of vanadium (V) adjacent to the free magnetic layer.

Abstract: A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

Abstract: An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).

Abstract: The present invention provides a magnetic tunnel junction structure, including a first magnetic layer having a fixed magnetization direction and a second magnetic layer having a reversible magnetization direction. A non-magnetic layer is formed between the first magnetic layer and the second magnetic layer and a third magnetic layer allows the magnetization direction of the second magnetic layer to be inclined with respect to a plane of the second magnetic layer by a magnetic coupling to the second magnetic layer with a vertical magnetic anisotropic energy thereof larger than a horizontal magnetic anisotropic energy thereof. A crystal-structure separation layer is formed between the second magnetic layer and the third magnetic layer for separating a crystal orientation between the second and the third magnetic layers.

Abstract: In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.

Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

Abstract: In one embodiment, a tunnel magnetoresistance (TMR) head includes a lead layer above a substrate, a seed layer above the lead layer, an antiferromagnetic (AFM) layer above the seed layer, a first ferromagnetic layer above the AFM layer, a second ferromagnetic layer above the first ferromagnetic layer, a coupling layer between the first and second ferromagnetic layers, the coupling layer causing a magnetization of the second ferromagnetic layer to be coupled to a magnetization of the first ferromagnetic layer, a fixed layer above the second ferromagnetic layer, an insertion layer adjacent the fixed layer or in the fixed layer, a barrier layer above the fixed layer, a free layer above the barrier layer, and a cap layer above the free layer. In another embodiment, the insertion layer is from about 0.05 nm to 0.3 nm in thickness and includes Ta, Ti, Hf, and/or Zr, and the free layer includes CoFeB.

Abstract: A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.

Abstract: A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to the air bearing surface.

Abstract: An MR element includes a stack, being a pillar or trapezoidal stack, including first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field, and a spacer layer that is positioned between the first magnetic layer and the second magnetic layer, and that is provided with a main spacer layer that is composed of gallium oxide, zinc oxide or magnesium oxide as a primary component, wherein, one part of side surfaces of the stack forms a part of an air bearing surface; and a cover layer that covers at least another part of the side surfaces of the stack and that is composed of gallium oxide as a primary component.

Abstract: A magnetic tunnel junction (MTJ) (10) employing a dielectric tunneling barrier (16), useful in magnetoresistive random access memories (MRAMs) and other devices, has a synthetic antiferromagnet (SAF) structure (14, 16), comprising two ferromagnetic (FM) layers (26, 41; 51, 58; 61, 68) separated by a coupling layer (38, 56, 66). Improved magnetoresistance (MR) ratio is obtained by providing a further layer (44, 46, 46?, 47, 52, 62), e.g. containing Ta, preferably spaced apart from the coupling layer (38, 56, 66) by a FM layer (41, 30-2, 54). The further layer (44, 46, 46?, 47, 52, 62) may be a Ta dusting layer (44) covered by a FM layer (30-2), or a Ta containing FM alloyed layer (46), or a stack (46?) of interleaved FM and N-FM layers, or other combination (47, 62). Furthering these benefits, another FM layer, e.g., CoFe, NiFe, (30, 30-1, 51, 61) is desirably provided between the further layer (44, 46, 46?, 47, 52, 62) and the tunneling barrier (16).

Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.

Abstract: It is made possible to provide a spin-torque oscillator that has a high Q value and a high output. A spin-torque oscillator includes: an oscillating field generating unit configured to generate an oscillating field; and a magnetoresistive element including a magnetoresistive effect film including a first magnetization pinned layer of which a magnetization direction is pinned, a first magnetization free layer of which a magnetization direction oscillates with the oscillating field, and a first spacer layer interposed between the first magnetization pinned layer and the first magnetization free layer.

Abstract: According to one embodiment, a magnetic head includes a barrier layer having a crystalline structure, a first magnetic layer above the barrier layer, a magnetic insertion layer above the first magnetic layer, and a second magnetic layer above the magnetic insertion layer, the second magnetic layer having a textured face-centered cubic (fcc) structure. The first magnetic layer comprises a high spin polarization magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the barrier layer than a crystalline structure of the second magnetic layer and the magnetic insertion layer comprises a magnetic material having a crystalline structure and a characteristic of crystallization being more similar to the crystalline structure of the second magnetic layer than the crystalline structure of the barrier layer. Additional magnetic head structures and methods of producing magnetic heads are described according to more embodiments.

Abstract: A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.

Abstract: A magneto-resistance element is provided. The magneto-resistance element includes an underlying layer including a main metal selected from electrically conductive metals and an auxiliary metal selected from transition metals, a first magnetic layer stacked on the underlying layer, an insulation layer stacked on the first magnetic layer, and a second magnetic layer stacked on the insulation layer.

Abstract: A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

Abstract: A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

Abstract: There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni.

Abstract: The invention discloses how the insertion of a layer of CoFeB serves to increase the robustness of an MTF device by smoothing the interface between the tunnel barrier and the pinned layer.

Abstract: A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.

Abstract: A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0 of less than 1×106 A/cm2 is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

Abstract: An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amorphous magnetic layer comprised of at least one element of Co, Fe, or Ni, and at least one element having an amorphous character selected from B, Zr, Hf, Nb, Ta, Si, or P, or a 1 to 5 Angstrom thick non-magnetic layer comprised of Cu, Ru, Mn, Hf, or Cr. Preferably, the content of the one or more amorphous elements in the amorphous magnetic layer is less than 40 atomic %. Optionally, the insertion layer may be formed within the AP2 pinned layer. Examples of an insertion layer are CoFeB, CoFeZr, CoFeNb, CoFeHf, CoFeNiZr, CoFeNiHf, and CoFeNiNbZr.

Abstract: According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni.

Abstract: Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.

Abstract: In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.

Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.

Abstract: A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and ?S values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ?16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically <20 atomic % and the Ni content in NiFe is <85 atomic %. The CPP-GMR performance may also be optimized by incorporating a confining current path layer in the copper spacer between the pinned layer and free layer. For a pinned layer with an AP2/Ru/AP1 configuration, the spin valve performance is further improved by an AP1 layer comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

Abstract: A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.

Abstract: According to one embodiment, a TMR effect element includes a ground layer, an antiferromagnetic layer above the ground layer, a first ferromagnetic layer above the antiferromagnetic layer and exchange-coupled to the antiferromagnetic layer, an anti-parallel coupling layer above the first ferromagnetic layer, a second ferromagnetic layer having a magnetic moment coupled anti-parallel to the magnetic moment of the first ferromagnetic layer via the anti-parallel coupling layer, an insulation barrier layer above the second ferromagnetic layer, and a third ferromagnetic layer above the insulation barrier layer. At least a portion of the second ferromagnetic layer and at least a portion of the third ferromagnetic layer on an insulation barrier layer side are comprised of a crystal, and the insulation barrier layer comprises MgO and an oxide material having an independent cubic crystal structure and complete solid solubility with MgO.

Abstract: A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated from the free layer and in physical contact with the reference layer. In some embodiments, the reference layer is larger than the free layer.

Abstract: A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

Abstract: A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)X, (Co/NiFe)X, (Co/NiCo)X, (CoFe/NiFe)X, or (CoFe/NiCo)X composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

Abstract: A tunneling magnetoresistance (TMR) read sensor with a Co—Fe—B lower sense layer and a Co—Hf upper sense layer is disclosed. In order for the dual sense layers to exhibit a negative saturation magnetostriction (?S), their Fe contents are either substantially reduced or even eliminated, instead of adding a conventional Ni—Fe film as an additional sense layer. By optimizing compositions and thicknesses of the dual sense layers, the dual sense layers indeed exhibit a negative ?S, while the TMR sensor exhibits a TMR coefficient (?RT/RJ) of greater than 80% at a junction resistance-area product (RJAJ) of less than 2 ?-?m2.

Abstract: A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a plurality of holes therein produced by irradiation thereof with highly charged ions. The metal of a further metal layer, deposited on the insulator layer, fills the plurality of holes in the insulator layer.

Abstract: According to one embodiment, a method for forming at least a portion of a magnetic head includes forming a keeper layer, forming a reference layer, and forming an AFM coupling layer which is positioned between the keeper layer and the reference layer. In addition, forming the reference layer includes forming a layer of CoFe, depositing a layer of CoFeHf which is about 20 atomic % Hf, and depositing a layer of CoFeB such that the layers of CoFeHf and CoFeB are directly adjacent and a ratio of respective physical thicknesses of CoFeHf to CoFeB is less than about 0.66. Other embodiments are also included such as a magnetic head and additional methods for forming at least a portion of a magnetic head.

Abstract: A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. The nonmagnetic spacer layer is a tunneling barrier layer. The free layer is configured to be biased in a first direction. The pinned layer has a pinned layer magnetization configured to be pinned in a second direction that is at a first angle from perpendicular to the ABS. The first angle is nonzero and different from ninety degrees. The second direction and the first direction form a second angle that is different from ninety degrees.

Abstract: A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.

Abstract: A hard disk drive slider comprises an overcoat layer, which covers an air-bearing surface of the slider. The overcoat covers an exposed surface of a tunneling magnetoresistance transducer. An adhesion layer is coupled with the overcoat layer and the air-bearing surface. The adhesion layer comprises a compound of nitrogen. The compound of nitrogen reduces noise in read data from the tunneling magnetoresistance transducer.

Abstract: On the substrate (101), there is formed at least a laminated structure composed of sandwiching a tunnel barrier layer (107) between magnetic pinned layers (105 and 106) each having multilayer structure and magnetic free layers (108, 109, and 110) each having multilayer structure. The magnetic pinned layer having multilayer structure, the tunnel barrier layer, and the magnetic free layer having multilayer structure are stacked in this order on the substrate. The magnetic free layer having multilayer structure has a sandwich structure holding an intermediate layer (109) between a first magnetic free layer (108) and a second magnetic free layer (110). The intermediate layer comprises any one of a single-layer metal nitride, a single-layer alloy, and a multilayer film obtained by stacking pluralities of films made of metal, metal nitride, or alloy.

Abstract: A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.