Abstract: Provided is a ferromagnetic powder for magnetic recording, in which an activation volume is 800 nm3 to 1,500 nm3, an average plate ratio is 2.0 to 5.0, a rare earth atom content is 0.5 atom % to 5.0 atom %, and an aluminum atom content is greater than 10.0 atom % and equal to or smaller than 20.0 atom %, with respect to 100 atom % of iron atom, and the ferromagnetic powder is a plate-shaped hexagonal strontium ferrite powder having a rare earth atom surface layer portion uneven distribution and an aluminum atom surface layer portion uneven distribution, and a magnetic recording medium including this ferromagnetic powder for magnetic recording in a magnetic layer.

Abstract: According to one embodiment, a magnetic recording device includes a magnetic head, and an electrical circuit. The magnetic head includes a first magnetic pole, a second magnetic pole, and a stacked body provided between the first and the second magnetic poles. The stacked body includes a first nonmagnetic layer, a first magnetic layer provided between the first nonmagnetic layer and the second magnetic pole, a first layer provided between the first magnetic layer and the second magnetic pole, a second nonmagnetic layer provided between the first layer and the second magnetic pole, a second magnetic layer provided between the second nonmagnetic layer and the second magnetic pole, and a third nonmagnetic layer provided between the second magnetic layer and the second magnetic pole. The electrical circuit supplies, to the stacked body, a first current having a first orientation from the second magnetic pole toward the first magnetic pole.

Abstract: According to one embodiment, a magnetic head includes a first magnetic pole, a second magnetic pole, and a stacked body provided between the first and second magnetic poles. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic pole and the first magnetic layer, a third magnetic layer provided between the first magnetic pole and the second magnetic layer, a first nonmagnetic layer provided between the first magnetic layer and the second magnetic pole, a second nonmagnetic layer provided between the second and first magnetic layers, and a third nonmagnetic layer provided between the third and second magnetic layers. The third magnetic layer includes first and second elements. The first and second magnetic layers do not include the second element. Or concentrations of the second element in the first and second magnetic layers are less than in the third magnetic layer.

Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.

Abstract: According to one embodiment, a magnetic head includes a shield, a magnetic pole, a first magnetic layer provided between the shield and the magnetic pole, a second magnetic layer provided between the first magnetic layer and the magnetic pole, a third magnetic layer provided between the second magnetic layer and the magnetic pole, a first nonmagnetic layer provided between the shield and the first magnetic layer, a second nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a third nonmagnetic layer provided between the second magnetic layer and the third magnetic layer, and a fourth nonmagnetic layer provided between the third magnetic layer and the magnetic pole. The first and third nonmagnetic layers include one of Cu, Ag, Au, Al, and Ti. The second and fourth nonmagnetic layers include one of Ta, Pt, Ir, W, Mo, Cr, Tb, Rh, Pd, and Ru.

Abstract: Thermally annealed superparamagnetic core shell nanoparticles of an iron-cobalt ternary alloy core and a silicon dioxide shell having high magnetic saturation are provided. A magnetic core of high magnetic moment obtained by compression sintering the thermally annealed superparamagnetic core shell nanoparticles is also provided. The magnetic core has little core loss due to hysteresis or eddy current flow.

Abstract: Thermally annealed superparamagnetic core shell nanoparticles of an iron-cobalt alloy core and a silicon dioxide shell having high magnetic saturation are provided. A magnetic core of high magnetic moment obtained by compression sintering the thermally annealed superparamagnetic core shell nanoparticles is also provided. The magnetic core has little core loss due to hysteresis or eddy current flow.

Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.

Abstract: An apparatus according to one embodiment includes a module having a tape bearing surface. The tape bearing surface extends between first and second edges of the module. A first tape tenting region extends from the first edge along the tape bearing surface toward the second edge. Each tunnel valve read transducer is positioned in the first tape tenting region. A plurality of tunnel valve read transducers are arranged in an array extending along the tape bearing surface of the module in the first tape tenting region. Each of the tunnel valve read transducers includes a sensor structure having a tunnel barrier layer. At least some of the sensor structures are recessed from a plane extending along the tape bearing surface. An at least partially polycrystalline coating is located on a media facing side of the recessed sensor structures.

Abstract: In one general embodiment, an apparatus includes a module having a tape bearing surface and an array of write transducers extending along the tape bearing surface. Each write transducer has a first write pole having a pole tip extending from a media facing side of the first write pole, a second write pole having a pole tip extending from a media facing side of the second write pole, a nonmagnetic write gap between the pole tips of the write poles, and a high moment layer between the pole tips of the write poles. The high moment layer has a higher magnetic moment than a magnetic moment of the pole tip of the second write pole. The tape bearing surface of the module has patterning, and/or a first tape tenting region where each write transducer is positioned in the first tape tenting region.

Abstract: A code-proving system is adapted to analyze implementation code for compliance with a at least a specified model. The implementation code can be code that is used to provide control or semi-automated control of a complex electromechanical system, such as an automobile. The specified model may be written to comply with a meta-model such as the software architecture specification known as Automotive Open System Architecture (AUTOSAR).

Abstract: An apparatus according to one embodiment includes a module having a tape bearing surface and a plurality of tunnel valve read transducers arranged in an array extending along the tape bearing surface of the module. Each of the tunnel valve read transducers includes a sensor structure having a free layer, a tunnel barrier layer, and a reference layer. At least some of the sensor structures are recessed from a plane extending along the tape bearing surface. An at least partially polycrystalline coating is positioned on a media facing side of the recessed sensor structures.

Abstract: The disclosure describes multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.

Abstract: An apparatus that includes a storage layer and a heating assistance element. The heating assistance element is adjacent to the storage layer or doped into the storage layer. The heating assistance element is configured to enhance spatial confinement of energy from a field to an area of the storage layer to which the field is applied.

Abstract: A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.

Abstract: The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.

Abstract: A perpendicular magnetic recording medium includes a nonmagnetic substrate, an underlayer provided above the nonmagnetic substrate, and a perpendicular recording layer provided above the underlayer. The perpendicular recording layer includes a first magnetic layer including Co and Pt and having a granular structure, and a second magnetic layer having magnetic and ferroelectric properties.

Abstract: In one embodiment, a magnetic read head includes an antiferromagnetic (AFM) layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, wherein the seed layer includes a laminated structure with an upper layer including Ru being positioned above one or more additional layers. In another embodiment, a magnetic read head includes an AFM layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, the seed layer including a laminated structure of Ta/Y/Ru, wherein Y is a layer having an element or an alloy. Other magnetic heads having a reduced amount of random telegraph noise (RTN) and methods of formation thereof are disclosed according to more embodiments.

Abstract: In one embodiment, magnetic read head includes a seed layer including an amorphous alloy film and Ru film positioned thereon, and an antiferromagnetic (AFM) layer positioned above the seed layer, the AFM layer including an alloy of MnIr having an L12 ordered phase, the amorphous alloy including a Co—X alloy having more Co than any other element, with X including at least one of: Zr, Nb, Ta, Hf, W, Si, and Al. In another embodiment, a method for forming a magnetic read head includes forming a seed layer above a substrate, heating at least the substrate to a first temperature in a range from about 150° C. to about 300° C., cooling at least the substrate to a second temperature of less than about 100° C., and forming an AFM layer above the seed layer between the heating and the cooling, the AFM layer comprising a MnIr alloy.

Abstract: A write pole structure disclosed herein includes a write pole, a trailing shield, and a high magnetic moment (HMM) material layer on a surface of the trailing shield facing the write pole.

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.

Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.

Abstract: A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.

Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminated layer. The (Co/Ni)x HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

Abstract: A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.

Abstract: In the present invention, magnetic and non-magnetic films are formed as a compound of Fe, Ni and P to provide a multilayer film in which such magnetic and non-magnetic films are alternately stacked. The multilayer film includes a magnetic film and a non-magnetic film. The magnetic film and the non-magnetic film are alternately stacked. The magnetic film contains Fe, Ni and P but has Fe as a main component. The magnetic film contains Fe, Ni and P but has Fe or Ni as a main component. The non-magnetic film contains Fe, Ni and P but has Ni as a main component.

Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.

Abstract: A method for manufacturing a magnetic film includes preparing a foundation layer containing a noble metal element and a base metal element, and depositing a plated layer of a magnetic material on the foundation layer by pulse plating.

Abstract: Provided herein, is an apparatus that includes a nonmagnetic substrate having a surface; and a plurality of overlying thin film layers forming a layer stack on the substrate surface. The layer stack includes a magnetically hard perpendicular magnetic recording layer structure and an underlying soft magnetic underlayer (SUL), wherein the sum of a magnetic thickness of the layer stack is a magnetic thickness of up to about 2 memu/cm?2.

Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

Abstract: A method for fabricating a magnetic transducer having an air-bearing surface (ABS). An underlayer having a first and second regions and a bevel connecting these regions is provided. The first region is thicker and closer to the ABS than the second region. An intermediate layer conformal with the underlayer is provided. A hard mask layer having a top surface perpendicular to the ABS is formed on the intermediate layer. Part of the hard mask and intermediate layers are removed to provide a trench. The trench has a bottom surface and sidewalls having a first angle between the bottom surface and the intermediate layer and a second angle corresponding to the hard mask layer. A pole is provided in the trench. The pole has a pole tip, a yoke distal, and a bottom bevel. At least the yoke includes sidewalls having sidewall angles corresponding to the first and second angles.

Abstract: A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.

Abstract: A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.

Abstract: In a magnetic head of a high-frequency magnetic field assisted recording system, a width of a high-frequency magnetic field from an oscillator is decreased to enhance an oscillation frequency, in order to realize a high-density recording. An oscillator provided near a main pole, which generates a recording magnetic field, for generating a high-frequency magnetic field is patterned by a conventional photolithography, and then, an oxidation, nitridation, or oxynitridation is performed on the side face in a track width direction. With this process, an oxide layer, a nitride layer, or an oxynitride layer, which is made of a material of the oscillator, is formed on the side face of the oscillator in the track width direction, and the shape of the oscillator is formed to be semi-circular.

Abstract: A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.

Abstract: A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.

Abstract: Approaches to reduce switching field distribution in energy assisted magnetic storage devices involve first and second exchange coupled magnetic elements. The first magnetic elements have anisotropy, Hk1, volume, V1 and the second magnetic elements are magnetically exchange coupled to the first magnetic elements and have anisotropy Hk2, and volume V2. The thermal stability of the exchange coupled magnetic elements is greater than about 60 kBT at a storage temperature of about 300 K. The magnetic switching field distribution, SFD, of the exchange coupled magnetic elements is less than about 200% at a predetermined magnetic switching field and a predetermined assisting switching energy.

Abstract: An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.

Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.

Abstract: A method for adaptively learning a sparse impulse response (100) of a continuous channel to which an input signal (x(t)) is applied and which delivers an output signal (y(t)), comprising the following steps: low-pass filtering the input signal and the output signal and obtain a filtered input signal (xF(t)) and a filtered output signal (yF(t)) sampling the filtered input signal and the filtered output signal with a sampling rate below the Nyquist rate and obtaining a sampled input signal (xS(t)) and a sampled output signal (yS(t)) retrieving from the sampled input signal (xS(t)) and the sampled output signal (yS(t)) an estimate (400) of the sparse impulse response (100) of the continuous channel.

Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Abstract: A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.

Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.

Abstract: Method of incorporating atomic oxygen into a magnetic recording layer by sputtering a target containing an oxide of cobalt. The oxide of cobalt may be sputtered to provide a readily dissociable source of oxygen which may increase the concentration of free cobalt atoms (Co) in the magnetic recording layer and also increase oxide content in the magnetic recording layer.

Abstract: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.

Abstract: The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.

Abstract: A method for manufacturing a magnetic write head that has a trailing magnetic shield with a tapered write pole trailing edge, a non-magnetic step layer and a Ru bump and an alumina bump formed at the front of the non-magnetic step layer. The process forms a Ru/alumina side wall at the sides of the write pole, such that the Ru side wall is closest to the write pole. The Ru is removed more readily than the alumina during the ion milling that is performed to taper the write pole. This causes the Ru portion of the side wall to taper away from the write pole rather than forming an abrupt step. This tapering prevents dishing of the trailing edge of the write pole for improved write head performance.

Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a main pole and a trailing edge shield having surfaces and interior portions that may include synthetic antiferromagnetic multi-layered superlattices (SAFS) formed on and/or within them respectively. The SAFS, which are multilayers formed as periodic multiples of antiferromagnetically coupled tri-layers, provide a mechanism for enhancing the component of the writing field that is vertical to the magnetic medium by exchange coupling to the magnetization of the pole and shield and constraining the directions of their magnetizations to lie within the film plane of the SAFS.

Abstract: An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and [a] means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.