Magnetic Layer Composition Patents (Class 428/812)
  • Patent number: 11138994
    Abstract: According to one embodiment, a magnetic head includes a shield, a magnetic pole, a first magnetic layer provided between the shield and the magnetic pole, a second magnetic layer provided between the first magnetic layer and the magnetic pole, a third magnetic layer provided between the second magnetic layer and the magnetic pole, a first nonmagnetic layer provided between the shield and the first magnetic layer, a second nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, a third nonmagnetic layer provided between the second magnetic layer and the third magnetic layer, and a fourth nonmagnetic layer provided between the third magnetic layer and the magnetic pole. The first and third nonmagnetic layers include one of Cu, Ag, Au, Al, and Ti. The second and fourth nonmagnetic layers include one of Ta, Pt, Ir, W, Mo, Cr, Tb, Rh, Pd, and Ru.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: October 5, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Tazumi Nagasawa, Naoyuki Narita, Hirofumi Suto, Masayuki Takagishi, Tomoyuki Maeda
  • Patent number: 10984933
    Abstract: Thermally annealed superparamagnetic core shell nanoparticles of an iron-cobalt ternary alloy core and a silicon dioxide shell having high magnetic saturation are provided. A magnetic core of high magnetic moment obtained by compression sintering the thermally annealed superparamagnetic core shell nanoparticles is also provided. The magnetic core has little core loss due to hysteresis or eddy current flow.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: April 20, 2021
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventor: Michael Paul Rowe
  • Patent number: 10910153
    Abstract: Thermally annealed superparamagnetic core shell nanoparticles of an iron-cobalt alloy core and a silicon dioxide shell having high magnetic saturation are provided. A magnetic core of high magnetic moment obtained by compression sintering the thermally annealed superparamagnetic core shell nanoparticles is also provided. The magnetic core has little core loss due to hysteresis or eddy current flow.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: February 2, 2021
    Assignees: Toyota Motor Engineering & Manufacturing North America, Inc., Toyota Jidosha Kabushiki Kaisha
    Inventors: Michael Paul Rowe, Sean Evan Sullivan, Daisuke Okamoto
  • Patent number: 10861486
    Abstract: A PMR (perpendicular magnetic recording) write head configured for microwave assisted magnetic recording (MAMR) includes a spin-torque oscillator (STO) and trailing shield formed of high moment magnetic material (HMTS). By patterning the STO and the HMTS in a simultaneous process the HMTS and the STO layer are precisely aligned and have very similar cross-track widths. In addition, the write gap at an off-center location has a thickness that is independent from its center-track thickness and the write gap total width can have a flexible range whose minimum value is the same width as the STO width.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: December 8, 2020
    Assignee: Headway Technologies, Inc.
    Inventors: Yuhui Tang, Ying Liu
  • Patent number: 10748560
    Abstract: An apparatus according to one embodiment includes a module having a tape bearing surface. The tape bearing surface extends between first and second edges of the module. A first tape tenting region extends from the first edge along the tape bearing surface toward the second edge. Each tunnel valve read transducer is positioned in the first tape tenting region. A plurality of tunnel valve read transducers are arranged in an array extending along the tape bearing surface of the module in the first tape tenting region. Each of the tunnel valve read transducers includes a sensor structure having a tunnel barrier layer. At least some of the sensor structures are recessed from a plane extending along the tape bearing surface. An at least partially polycrystalline coating is located on a media facing side of the recessed sensor structures.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: August 18, 2020
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Calvin S. Lo
  • Patent number: 10726868
    Abstract: In one general embodiment, an apparatus includes a module having a tape bearing surface and an array of write transducers extending along the tape bearing surface. Each write transducer has a first write pole having a pole tip extending from a media facing side of the first write pole, a second write pole having a pole tip extending from a media facing side of the second write pole, a nonmagnetic write gap between the pole tips of the write poles, and a high moment layer between the pole tips of the write poles. The high moment layer has a higher magnetic moment than a magnetic moment of the pole tip of the second write pole. The tape bearing surface of the module has patterning, and/or a first tape tenting region where each write transducer is positioned in the first tape tenting region.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: July 28, 2020
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Calvin S. Lo
  • Patent number: 10705800
    Abstract: A code-proving system is adapted to analyze implementation code for compliance with a at least a specified model. The implementation code can be code that is used to provide control or semi-automated control of a complex electromechanical system, such as an automobile. The specified model may be written to comply with a meta-model such as the software architecture specification known as Automotive Open System Architecture (AUTOSAR).
    Type: Grant
    Filed: January 3, 2018
    Date of Patent: July 7, 2020
    Assignee: The MathWorks, Inc.
    Inventor: Jean Yves Brunel
  • Patent number: 10650846
    Abstract: An apparatus according to one embodiment includes a module having a tape bearing surface and a plurality of tunnel valve read transducers arranged in an array extending along the tape bearing surface of the module. Each of the tunnel valve read transducers includes a sensor structure having a free layer, a tunnel barrier layer, and a reference layer. At least some of the sensor structures are recessed from a plane extending along the tape bearing surface. An at least partially polycrystalline coating is positioned on a media facing side of the recessed sensor structures.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: May 12, 2020
    Assignee: International Business Machines Corporation
    Inventors: Robert G. Biskeborn, Calvin S. Lo
  • Patent number: 10573439
    Abstract: The disclosure describes multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2, where Z includes at least one of C, B, or O, and x is a number greater than zero and less than one. The disclosure also describes techniques for forming multilayer hard magnetic materials including at least one layer including ??-Fe16N2 and at least one layer including ??-Fe16(NxZ1-x)2 or a mixture of ??-Fe16N2 and ??-Fe16Z2 using chemical vapor deposition or liquid phase epitaxy.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: February 25, 2020
    Assignee: REGENTS OF THE UNIVERSITY OF MINNESOTA
    Inventors: Jian-Ping Wang, Yanfeng Jiang
  • Publication number: 20150147592
    Abstract: An apparatus that includes a storage layer and a heating assistance element. The heating assistance element is adjacent to the storage layer or doped into the storage layer. The heating assistance element is configured to enhance spatial confinement of energy from a field to an area of the storage layer to which the field is applied.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Inventors: Michael Seigler, Weibin Chen, Werner Scholz, Jan Ulrich Thiele, Lihong Zhang, Xiong Liu, Shashwat Shukla
  • Patent number: 8945730
    Abstract: A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
    Type: Grant
    Filed: December 5, 2011
    Date of Patent: February 3, 2015
    Assignee: Sony Corporation
    Inventors: Hiroyuki Ohmori, Masanori Hosomi, Kazuhiro Bessho, Yutaka Higo, Kazutaka Yamane, Hiroyuki Uchida, Tetsuya Asayama
  • Publication number: 20140377589
    Abstract: The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.
    Type: Application
    Filed: June 21, 2013
    Publication date: December 25, 2014
    Applicant: HGST Netherlands B.V.
    Inventors: James Mac FREITAG, Zheng GAO
  • Publication number: 20140362472
    Abstract: A perpendicular magnetic recording medium includes a nonmagnetic substrate, an underlayer provided above the nonmagnetic substrate, and a perpendicular recording layer provided above the underlayer. The perpendicular recording layer includes a first magnetic layer including Co and Pt and having a granular structure, and a second magnetic layer having magnetic and ferroelectric properties.
    Type: Application
    Filed: June 6, 2014
    Publication date: December 11, 2014
    Inventors: Akira SAKAWAKI, Akira Yamane
  • Publication number: 20140334031
    Abstract: In one embodiment, magnetic read head includes a seed layer including an amorphous alloy film and Ru film positioned thereon, and an antiferromagnetic (AFM) layer positioned above the seed layer, the AFM layer including an alloy of MnIr having an L12 ordered phase, the amorphous alloy including a Co—X alloy having more Co than any other element, with X including at least one of: Zr, Nb, Ta, Hf, W, Si, and Al. In another embodiment, a method for forming a magnetic read head includes forming a seed layer above a substrate, heating at least the substrate to a first temperature in a range from about 150° C. to about 300° C., cooling at least the substrate to a second temperature of less than about 100° C., and forming an AFM layer above the seed layer between the heating and the cooling, the AFM layer comprising a MnIr alloy.
    Type: Application
    Filed: May 13, 2013
    Publication date: November 13, 2014
    Applicant: HGST Netherlands B.V.
    Inventors: Kouichi Nishioka, Koujiro Komagaki
  • Publication number: 20140334032
    Abstract: In one embodiment, a magnetic read head includes an antiferromagnetic (AFM) layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, wherein the seed layer includes a laminated structure with an upper layer including Ru being positioned above one or more additional layers. In another embodiment, a magnetic read head includes an AFM layer including a MnIr alloy having an L12 ordered phase, a pinned layer positioned above the AFM layer, and a seed layer positioned directly below the AFM layer, the seed layer including a laminated structure of Ta/Y/Ru, wherein Y is a layer having an element or an alloy. Other magnetic heads having a reduced amount of random telegraph noise (RTN) and methods of formation thereof are disclosed according to more embodiments.
    Type: Application
    Filed: May 13, 2013
    Publication date: November 13, 2014
    Applicant: HGST Netherlands B.V.
    Inventors: Kouichi Nishioka, Koujiro Komagaki
  • Patent number: 8861316
    Abstract: A write pole structure disclosed herein includes a write pole, a trailing shield, and a high magnetic moment (HMM) material layer on a surface of the trailing shield facing the write pole.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: October 14, 2014
    Assignee: Seagate Technology LLC
    Inventors: Huaqing Yin, Jianhua Xue, Venkateswara Rao Inturi, Mark Thomas Kief, Michael C. Kautzky
  • Patent number: 8841006
    Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: September 23, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Gyung-Min Choi, Byoung Chul Min, Kyung Ho Shin
  • Publication number: 20140272471
    Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 18, 2014
    Applicant: Seagate Technology LLC
    Inventors: Wei Tian, Venkateswara Rao Inturi, Doug Lin, Huaqing Yin, Jiaoming Qiu
  • Publication number: 20140168816
    Abstract: Various methods for attaching a crystalline write pole onto an amorphous substrate and the resulting structures are described in detail herein. Further, the resulting structure may have a magnetic moment exceeding 2.4 Tesla. Still further, methods for depositing an epitaxial crystalline write pole on a crystalline seed or template material to ensure that the phase of the write pole is consistent with the high moment phase of the template material are also described in detail herein.
    Type: Application
    Filed: December 18, 2012
    Publication date: June 19, 2014
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Mark Anthony Gubbins, Marcus Benedict Mooney
  • Patent number: 8687321
    Abstract: A magnetic head assembly includes: a magnetic recording head, a head slider, a suspension and an actuator arm. The magnetic recording head includes a spin torque oscillator and a main magnetic pole. The spin torque oscillator includes, a first magnetic layer including at least one selected from the group consisting of a Fe—Co—Al alloy, a Fe—Co—Si alloy, a Fe—Co—Ge alloy, a Fe—Co—Mn alloy a Fe—Co—Cr alloy and a Fe—Co—B alloy, a second magnetic layer, and an intermediate layer provided between the first magnetic layer and the second magnetic layer. The main magnetic pole is placed together with the spin torque oscillator. The magnetic recording head is mounted on the head slider. The head slider is mounted on one end of the suspension. The actuator arm is connected to other end of the suspension.
    Type: Grant
    Filed: March 26, 2009
    Date of Patent: April 1, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenichiro Yamada, Hitoshi Iwasaki, Masayuki Takagishi, Tomomi Funayama
  • Publication number: 20140037989
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x laminated layer. The (Co/Ni)x HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Application
    Filed: October 8, 2013
    Publication date: February 6, 2014
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Zhang Kunliang, Li Min, Zhou Yuchen, Zheng Min
  • Patent number: 8632897
    Abstract: A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.
    Type: Grant
    Filed: October 28, 2009
    Date of Patent: January 21, 2014
    Assignee: Seagate Technology LLC
    Inventors: Hua Yuan, Jiaoming Qiu, Yonghua Chen, Shaun Eric McKinlay, Eric Walter Singleton
  • Publication number: 20140016233
    Abstract: In the present invention, magnetic and non-magnetic films are formed as a compound of Fe, Ni and P to provide a multilayer film in which such magnetic and non-magnetic films are alternately stacked. The multilayer film includes a magnetic film and a non-magnetic film. The magnetic film and the non-magnetic film are alternately stacked. The magnetic film contains Fe, Ni and P but has Fe as a main component. The magnetic film contains Fe, Ni and P but has Fe or Ni as a main component. The non-magnetic film contains Fe, Ni and P but has Ni as a main component.
    Type: Application
    Filed: July 13, 2012
    Publication date: January 16, 2014
    Applicant: TDK Corporation
    Inventors: Masaya Kato, Atsushi Yamaguchi
  • Patent number: 8568908
    Abstract: A method for manufacturing a magnetic film includes preparing a foundation layer containing a noble metal element and a base metal element, and depositing a plated layer of a magnetic material on the foundation layer by pulse plating.
    Type: Grant
    Filed: June 19, 2007
    Date of Patent: October 29, 2013
    Assignee: TDK Corporation
    Inventors: Kei Hirata, Atsushi Yamaguchi, Shingo Miyata
  • Patent number: 8568909
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Grant
    Filed: May 11, 2012
    Date of Patent: October 29, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Feiyue Li, Xiaomin Liu
  • Publication number: 20130280556
    Abstract: Provided herein, is an apparatus that includes a nonmagnetic substrate having a surface; and a plurality of overlying thin film layers forming a layer stack on the substrate surface. The layer stack includes a magnetically hard perpendicular magnetic recording layer structure and an underlying soft magnetic underlayer (SUL), wherein the sum of a magnetic thickness of the layer stack is a magnetic thickness of up to about 2 memu/cm?2.
    Type: Application
    Filed: June 17, 2013
    Publication date: October 24, 2013
    Inventors: Li Tang, Weilu Xu, Youfeng Zheng, Shanghsien Rou, Connie Chunling Liu, Jianhua Xue, Li-Lien Lee, Thomas P. Nolan
  • Patent number: 8563146
    Abstract: A method for fabricating a magnetic transducer having an air-bearing surface (ABS). An underlayer having a first and second regions and a bevel connecting these regions is provided. The first region is thicker and closer to the ABS than the second region. An intermediate layer conformal with the underlayer is provided. A hard mask layer having a top surface perpendicular to the ABS is formed on the intermediate layer. Part of the hard mask and intermediate layers are removed to provide a trench. The trench has a bottom surface and sidewalls having a first angle between the bottom surface and the intermediate layer and a second angle corresponding to the hard mask layer. A pole is provided in the trench. The pole has a pole tip, a yoke distal, and a bottom bevel. At least the yoke includes sidewalls having sidewall angles corresponding to the first and second angles.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: October 22, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Jinqiu Zhang, Ying Hong, Hai Sun, Hongping Yuan, Guanghong Luo, Xiaoyu Yang, Hongmei Han, Lingyun Miao
  • Patent number: 8563147
    Abstract: A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.
    Type: Grant
    Filed: June 24, 2009
    Date of Patent: October 22, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Yuchen Zhou, Min Zheng
  • Patent number: 8545999
    Abstract: A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: October 1, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Qunwen Leng, Mahendra Pakala, Yong Shen
  • Publication number: 20130229728
    Abstract: A magnetic head according to one embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer; and a pole layer of a magnetic material above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein. A magnetic head according to another embodiment includes a nonmagnetic gap layer in a trench; a pole seed layer above the nonmagnetic gap layer, the pole seed layer being comprised primarily of a material selected from a group consisting of NiCr, Ta/Ru, Ta/Rh, NiCr/Ru, NiCr/Rh, NiCr, CoOx, Ru, Rh, Cu, Au/MgO, Ta/Cu; and a pole layer comprised primarily of CoFe above the pole seed layer, wherein at least one of the nonmagnetic gap layer, the pole seed layer and the pole layer has nitrogen therein.
    Type: Application
    Filed: March 2, 2012
    Publication date: September 5, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Elizabeth A. Brinkman, Ning Shi, Brian R. York
  • Publication number: 20130222941
    Abstract: In a magnetic head of a high-frequency magnetic field assisted recording system, a width of a high-frequency magnetic field from an oscillator is decreased to enhance an oscillation frequency, in order to realize a high-density recording. An oscillator provided near a main pole, which generates a recording magnetic field, for generating a high-frequency magnetic field is patterned by a conventional photolithography, and then, an oxidation, nitridation, or oxynitridation is performed on the side face in a track width direction. With this process, an oxide layer, a nitride layer, or an oxynitride layer, which is made of a material of the oscillator, is formed on the side face of the oscillator in the track width direction, and the shape of the oscillator is formed to be semi-circular.
    Type: Application
    Filed: January 7, 2013
    Publication date: August 29, 2013
    Applicant: HITACHI, LTD.
    Inventor: HITACHI, LTD.
  • Patent number: 8490279
    Abstract: A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: July 23, 2013
    Assignee: Headway Technologies, Inc.
    Inventors: Yuchen Zhou, Kenichi Takano, Kunliang Zhang
  • Publication number: 20130177781
    Abstract: A material composition for forming a free layer in a STT structure (such as a single or dual MTJ structure) can include CoxFeyMz, where M is a non-magnetic material that assists in forming a good crystalline orientation and matching between the free layer and an MgO interface. The material M preferably either does not segregate to the MgO interface or, if it does segregate to the MgO interface, it does not significantly reduce the PMA of the free layer. The free layer can further include a connecting layer, where M is attracted to the insertion layer during annealing. The free layer can include a graded composition of CoxFeyMz, where z changes within the free layer.
    Type: Application
    Filed: February 27, 2013
    Publication date: July 11, 2013
    Inventors: Roman Chepulskyy, Dmytro Apalkov
  • Patent number: 8481181
    Abstract: Approaches to reduce switching field distribution in energy assisted magnetic storage devices involve first and second exchange coupled magnetic elements. The first magnetic elements have anisotropy, Hk1, volume, V1 and the second magnetic elements are magnetically exchange coupled to the first magnetic elements and have anisotropy Hk2, and volume V2. The thermal stability of the exchange coupled magnetic elements is greater than about 60 kBT at a storage temperature of about 300 K. The magnetic switching field distribution, SFD, of the exchange coupled magnetic elements is less than about 200% at a predetermined magnetic switching field and a predetermined assisting switching energy.
    Type: Grant
    Filed: March 31, 2011
    Date of Patent: July 9, 2013
    Assignee: Seagate Technology LLC
    Inventors: Xiaobin Wang, Kaizhong Gao
  • Patent number: 8470463
    Abstract: An apparatus and associated method are generally directed to a magnetic shield capable of screening magnetic flux with in-plane anisotropy. Various embodiments of the present invention may have at least one magnetic shield. The shield may be constructed of a Cobalt-Iridium compound capable of providing in-plane anisotropy along a longitudinal plane of the shield.
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: June 25, 2013
    Assignee: Seagate Technology LLC
    Inventors: James Gary Wessel, Bin Lu, Werner Scholz
  • Patent number: 8455117
    Abstract: A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
    Type: Grant
    Filed: March 4, 2009
    Date of Patent: June 4, 2013
    Assignee: Seagate Technology LLC
    Inventors: Kaizhong Gao, Haiwen Xi, Song Xue
  • Patent number: 8451921
    Abstract: A method for adaptively learning a sparse impulse response (100) of a continuous channel to which an input signal (x(t)) is applied and which delivers an output signal (y(t)), comprising the following steps: low-pass filtering the input signal and the output signal and obtain a filtered input signal (xF(t)) and a filtered output signal (yF(t)) sampling the filtered input signal and the filtered output signal with a sampling rate below the Nyquist rate and obtaining a sampled input signal (xS(t)) and a sampled output signal (yS(t)) retrieving from the sampled input signal (xS(t)) and the sampled output signal (yS(t)) an estimate (400) of the sparse impulse response (100) of the continuous channel.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: May 28, 2013
    Assignee: QUALCOMM Incorporated
    Inventors: Martin Vetterli, Yue Lu, Martin McCormick
  • Patent number: 8445122
    Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.
    Type: Grant
    Filed: December 18, 2008
    Date of Patent: May 21, 2013
    Assignees: Commissariat a l 'Energie Atomique, S.O.I. Tec Silicon on Insulator Technologies
    Inventors: Chrystel Deguet, Laurent Clavelier, Franck Fournel, Jean-Sebastien Moulet
  • Patent number: 8435652
    Abstract: A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: May 7, 2013
    Assignee: National Yunlin University of Science and Technology
    Inventors: Te-Ho Wu, Lin-Hsiu Ye, Ching-Ming Lee
  • Publication number: 20130094108
    Abstract: A magnetic read sensor having improved magnetic performance and robustness. The magnetic sensor includes a magnetic free layer and a magnetic pinned layer structure. The magnetic pinned layer structure includes first and second magnetic layers separated from one another by a non-magnetic coupling layer. The second magnetic layer of the magnetic pinned layer structure includes a layer of CoFeBTa, which prevents the diffusion of atoms and also promotes a desired BCC crystalline grain growth. The magnetic free layer structure can also include such a CoFeBTa layer for further prevention of atomic diffusion and further promotion of a desired BCC grain growth.
    Type: Application
    Filed: October 17, 2011
    Publication date: April 18, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Zheng Gao, Yingfan Xu, Hua Ai Zeng
  • Patent number: 8394243
    Abstract: Method of incorporating atomic oxygen into a magnetic recording layer by sputtering a target containing an oxide of cobalt. The oxide of cobalt may be sputtered to provide a readily dissociable source of oxygen which may increase the concentration of free cobalt atoms (Co) in the magnetic recording layer and also increase oxide content in the magnetic recording layer.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: March 12, 2013
    Assignee: WD Media, Inc.
    Inventors: Hong-Sik Jung, Donald Stafford, B. Ramamurthy Acharya, Sudhir S. Malhotra, Gerardo A. Bertero
  • Patent number: 8329319
    Abstract: The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: December 11, 2012
    Assignee: Agency for Science, Technology and Research
    Inventors: Luping Shi, Wendong Song, Xiangshui Miao, Tow Chong Chong
  • Patent number: 8329320
    Abstract: A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: December 11, 2012
    Assignee: Headway Technologies, Inc.
    Inventors: Kunliang Zhang, Min Li, Min Zheng, Fenglin Liu, Xiaomin Liu
  • Patent number: 8323727
    Abstract: A method for manufacturing a magnetic write head that has a trailing magnetic shield with a tapered write pole trailing edge, a non-magnetic step layer and a Ru bump and an alumina bump formed at the front of the non-magnetic step layer. The process forms a Ru/alumina side wall at the sides of the write pole, such that the Ru side wall is closest to the write pole. The Ru is removed more readily than the alumina during the ion milling that is performed to taper the write pole. This causes the Ru portion of the side wall to taper away from the write pole rather than forming an abrupt step. This tapering prevents dishing of the trailing edge of the write pole for improved write head performance.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: December 4, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Aron Pentek, Yi Zheng
  • Publication number: 20120295132
    Abstract: A perpendicular magnetic recording (PMR) head is fabricated with a main pole and a trailing edge shield having surfaces and interior portions that may include synthetic antiferromagnetic multi-layered superlattices (SAFS) formed on and/or within them respectively. The SAFS, which are multilayers formed as periodic multiples of antiferromagnetically coupled tri-layers, provide a mechanism for enhancing the component of the writing field that is vertical to the magnetic medium by exchange coupling to the magnetization of the pole and shield and constraining the directions of their magnetizations to lie within the film plane of the SAFS.
    Type: Application
    Filed: May 16, 2011
    Publication date: November 22, 2012
    Inventors: Tai Min, Yuhui Tang, Suping Song, Lijie Guan
  • Publication number: 20120270073
    Abstract: An apparatus and associated method may be used to provide a data sensing element capable of detecting changes in magnetic states. Various embodiments of the present invention are generally directed to a magnetically responsive lamination of layers and [a] means for generating a high magnetic moment region proximal to an air bearing surface (ABS) and a low magnetic moment region proximal to a hard magnet.
    Type: Application
    Filed: April 25, 2011
    Publication date: October 25, 2012
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: Mark William Covington, Qing He, Thomas Roy Boonstra
  • Patent number: 8277960
    Abstract: The invention relates to inorganic, intermetallic, inhomogeneous compounds having a magnetic resistance effect and an intrinsic field sensitivity of at least 7% at 1 T at room temperature. The invention further relates to a method for the production and use thereof, particularly as magnetic field sensors or in spin electronics.
    Type: Grant
    Filed: May 20, 2009
    Date of Patent: October 2, 2012
    Assignee: Johannes Gutenberg-Universität Mainz
    Inventors: Frederick Casper, Claudia Felser
  • Patent number: 8270125
    Abstract: A magnetoresistive tunnel junction sensor having improved free layer stability, as well as improved free sensitivity. The free layer is constructed to have a low magnetic coercivity which improves free layer sensitivity. The free layer is also constructed to have a negative magnetostriction which improves free layer stability by preventing the free layer from having an easy axis that is oriented perpendicular to the air bearing surface.
    Type: Grant
    Filed: December 18, 2007
    Date of Patent: September 18, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventor: Hardayal Singh Gill
  • Publication number: 20120225321
    Abstract: A magnetic layer that may serve as a top pole layer and bottom pole layer in a magnetic write head is disclosed. The magnetic layer has a composition represented by FeWCoXNiYVZ in which w, x, y, and z are the atomic % of Fe, Co, Ni, and V, respectively, and where w is between about 60 and 85, x is between about 10 and 30, y is between 0 and about 20, z is between about 0.1 and 3, and wherein w+x+y+z=100. An electroplating process having a plating current density of 3 to 30 mA/cm2 is used to deposit the magnetic layer and involves an electrolyte solution with a small amount of VOSO4 which is the V source. The resulting magnetic layer has a magnetic saturation flux density BS greater than 1.9 Telsa and a resistivity ? higher than 70 ?ohms-cm.
    Type: Application
    Filed: May 11, 2012
    Publication date: September 6, 2012
    Applicant: HEADWAY TECHNOLOGIES, INC.
    Inventors: Feiyue Li, Xiaomin Liu
  • Patent number: 8247093
    Abstract: This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: August 21, 2012
    Assignees: Commissariat a l'Energie Atomique, Centre National de la Recherche Scientifique
    Inventors: Bernard Rodmacq, Stéphane Auffret, Bernard Dieny, Jérôme Moritz