Abstract: A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance detected, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.

Abstract: The present invention relates to a magnetic head which can be kept in stable contact with a magnetic tape and has improved production efficiency, a manufacturing method therefor, and a magnetic tape device. The magnetic head according to the present invention includes a substrate and two auxiliary members, having a tape bearing surface to be in sliding contact with a magnetic tape. Reproducing and recording elements in alignment with each other along a tape running direction are arranged in the substrate along a tape width direction. The two auxiliary members are joined to two ends, respectively, of the substrate, constituting the tape bearing surface together with the substrate. The substrate or the two auxiliary members are formed with slopes extending from join-faces between the substrate and the two auxiliary members to the tape bearing surface to make clearances for the magnetic tape.

Abstract: First and second tunnel junctions having a common electrode composed of a nonmagnetic conductor and each of which has a counterelectrode composed of a ferromagnet are spaced apart from each other by a distance that is shorter than a spin diffusion length of the nonmagnetic conductor. The first tunnel junction injects spin from the ferromagnet into the nonmagnetic conductor and the second tunnel junction detects, between the ferromagnetic metal and the nonmagnetic conductor, a voltage that accompanies spin injection of the first tunnel junction. The nonmagnetic conductor may be a semiconductor or semimetal that is lower in carrier density than a metal. The common electrode alternatively may be composed of a superconductor. A spin injection device thus provided can exhibit a large signal voltage with a low current and under low magnetic field and can be miniaturized in device size.

Abstract: A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence of antiferromagnetic coupling strength. The insertion layers may include CoFe or CoFeX alloys. The thickness of the insertion layers is selected such that they do not increase the uniaxial anisotropy or deteriorate any other properties.

Abstract: Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

Abstract: A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient ? than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient ? of the free magnetic layer.

Abstract: Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane) structures which have a current cooling effect. A CPP structure refers to a structure comprising a columnar electrically conductive portion and an insulator portion surrounding the conductive portion. The columnar portion is formed from a multilayered structure in a direction perpendicular to the plane of the layers, so as to allow a current to flow from an upper layer to a lower layer (or vice versa). The cooling effect is induced by current at the interface (or a plural of interfaces) of appropriately selected different kinds of materials (which are conductive substances in general, such as metals, semiconductors, and alloys thereof) in the columnar portion due to the Peltier effect when a current flows through the column. Temperature in a minute range is detected by a thermocouple with the CPP structure.

Abstract: A magnetic write head includes a seed layer and a magnetic layer on the seed layer. The seed layer includes seed-layer grains having either a face-centered cubic (fcc) crystalline structure with a surface plane substantially oriented in a [111] direction or a hexagonal-close-packed (hcp) crystalline structure with a surface plane substantially oriented in a [0001] direction. The magnetic layer includes magnetic-layer grains having a body-centered-cubic (bcc) crystalline structure with a surface plane substantially oriented in a [110] direction.

Abstract: By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.

Abstract: A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.

Abstract: A damper for a data storage device having a viscoelastic material and a constraint material disposed on the viscoelastic material, the constraint material covers the sides of the viscoelastic material to reduce exposure of the viscoelastic material from debris in the surrounding environment.

Abstract: A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic ferromagnetic material is provided on the opposite side with an antiparallel coupling layer thereon and a subsequent thin-film of an anisotropic ferromagnetic material on the antiparallel coupling layer with the compensation thin-film being less thick than the subsequent thin-film. A antiferromagnetic layer can be supported by the layers on either side of the intermediate layer.

Abstract: A magnetic recording element includes a fixed layer having first and second surfacesm, a recording layer having third and fourth surfaces and being essentially made of a ferromagnetic material having first and second atomic potentials for the majority-spin band electrons and the minority-spin band electrons, a spacer layer being arranged between the fixed and recording layers and being in contact with the second and third surfaces, a cap layer having fifth and sixth surfaces, being essentially made of a nonmagnetic material having a third atomic potential less than an intermediate value between the first and second atomic potentials, and having a thickness of not more than 3 nm, the fifth surface being in contact with the fourth surface, and a reflecting layer being in contact with the sixth surface and being essentially made of a nonmagnetic material having a forth atomic potential different from the third atomic potential.

Abstract: Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.

Abstract: Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

Abstract: A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [220] planes are preferentially oriented in the direction parallel to the layer surface. The Heusler alloy layer is disposed on a bcc layer having a body-centered cubic (bcc) structure, in which equivalent crystal planes represented as [110] planes are preferentially oriented in the direction parallel to the layer surface.

Abstract: In a magnetic sensor (1) including a substrate (10) having a magnetism-sensitive element (11) formed thereon, a hard membrane (14) is formed on the outermost surface, an organic film (13) to relieve the stress caused by the hard membrane (14) is formed under the hard membrane (14), and an inorganic film (12) to relieve the stress caused by the organic film (13) is formed between the organic film (13) and magnetism-sensitive element (11). Also, an intermediate film formed from an element having a large force of bonding to carbon may be formed between the organic film (13) and hard membrane (14). Thus, the magnetic sensor (MR sensor, for example) can be protected against an external shock.

Abstract: The magnetic film includes an FeCo layer, restrains erasing data by a magnetic field leaked from a magnetic pole, has high saturation magnetic flux density and soft magnetism and writes data with high recording density. The magnetic film for a magnetic head of the present invention comprises: a nonmagnetic layer including at least one selected from a group of Ru, Rh, Ir, Cr, Cu, Au, Ag, Pt and Pd; a magnetic layer including Fe and Co. Anisotropy magnetic field is 0.8 kA/m or more.

Abstract: A soft magnetic film of the present invention is a plated film composed of Co and Fe, and columnar crystals extending in the film thickness direction are provided. In the present invention, columnar crystals extending in the film thickness direction are provided so that an improvement in the surface roughness of the film surface and an improvement in the corrosion resistance can be achieved. Furthermore, the saturation magnetic flux density Bs can also be improved by making the crystal fine and eliminating the need for addition of the noble metal element. That is, according to a CoFe alloy of the present invention, both the corrosion resistance and the saturation magnetic flux density Bs can be improved, and specifically, the above-mentioned saturation magnetic flux density Bs can be increased to 2.35 T or more.

Abstract: A lower shield layer is formed by being embedded in a first recess formed in an under layer. Accordingly, the distance between the lower shield layer and a slider can be reduced. Also, a second metal layer is formed from above a gap layer covering an electrode extracting layer over above the under layer hindwards therefrom. Accordingly, the second metal layer can be brought closer to the slider side than an upper shield layer. Consequently, the thermal dissipation effects of the thin-film magnetic head can be improved.

Abstract: A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous. Magnetic tunnel junctions formed from the amorphous magnetic layer, the tunnel barrier, and an additional ferromagnetic layer have tunneling magnetoresistance values of up to 200% or more.

Abstract: An electrode layer for thin-film magnetic heads includes a Ta base sub-layer, an Au sub-layer functioning as a main conductive sub-layer, and a protective sub-layer, those sub-layers being disposed in that order. An Au electrode seed sub-layer containing any one of NiFeCr, NiCr, and NiFe is placed between the Ta base sub-layer and the Au sub-layer. The Au electrode seed sub-layer has a thickness of 40 to 100 ?.

Abstract: A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or ?-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

Abstract: The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Abstract: Magnetoresistive (MR) sensors are disclosed that have leads with reduced resistance, improving the signal-to-noise ratio of the sensors. The leads have broad layers of highly conductive material for connection to MR structures, as opposed to thin wires of highly conductive material or broad layers of resistive material, lowering the resistance of the leads. The low-resistance leads can be formed without increasing the shield-to-shield spacing, providing highly sensitive and focused MR sensors.

Abstract: A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodiment, the AP coupling layer has a thickness of 15 ? or more. In another embodiment, the AP coupling layer is formed of Ir, and preferably has a thickness of 15 ? or more. A bias layer is formed above each of the tab portions of the free layer, magnetic moments of the tab regions of the free layer being pinned antiparallel to the magnetic moments of the bias layers.

Abstract: The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer. The element area defined by the area of the intermediate layer through which current flows perpendicular to the film is not larger than 1000 ?m2.

Abstract: The magnetic thin film has high saturation magnetic flux density and superior soft magnetic characteristics. The magnetic thin film of the present invention comprises: a base layer being made of FeCo/NiFe; and a plated layer being formed on the base layer, the plated layer being made of FeCo.

Abstract: The present invention provides a CPP-type spin-valve magnetic detecting element permitting a decrease in an effective element area even with a large optical element area. A current limiting layer having an insulating portion and a conductive portion is formed in a free magnetic layer to narrow a sensing current and decrease diffusion of the sensing current. Also, the current density of the sensing current flowing through the free magnetic layer can be securely locally increased. Therefore, even when the optical element area of the free magnetic layer in parallel to the film plane is 0.01 ?m2 or more, the effective element area can be securely decreased, and a CPP-type magnetic detecting element producing large ?R and high reproduction output can easily be formed.

Abstract: An electroplated magnetic thin film consisting of an electroplated film of Fe—Co alloy containing Fe by an amount of 52–86 wt % and having a highly packed fine crystal grain structure, a flat and glossy surface, a high saturation magnetic flux density not less than 2.1 T, a low coercive force of 5–10 Oe, and being particularly suitable as a pole portion of a thin film magnetic head is proposed. The electroplated magnetic thin film is deposited on a substrate by an electroplating process with a pulsatory current or direct current having a current density of 3–120 mA/cm2 while using an electroplating bath containing one or both of sulfate salt and hydrochloric salt serving as supply sources of Fe ions and Co ions, saccharin sodium serving as a stress relaxation agent by an amount not less than 1 g/l, boric acid as a pH buffer agent, ammonium chloride as an electrically conductivity salt, and sodium lauryl sulfate as a surfactant.

Abstract: A tri-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The tri-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The tri-layer anti-reflection coating features a first layer, a first dielectric layer, an absorption layer disposed on the first dielectric layer, and a second dielectric layer, which is then disposed between the absorption layer and a photoresist layer. At least the absorption layer and dielectric layers can be formed using vacuum deposition. A unique character of the tri-layer anti-reflective coatings is that it dampens reflections structures having severe topologies and also allows a thinner anti-reflection layer that has a wider process latitude.

Abstract: A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.

Abstract: The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized.

Abstract: A magnetic sensing device is disclosed. The magnetic sensing device may have an integrated circuit and a magnetic sensor. A magnetic buffer layer of material may be deposited between the integrated circuit and the magnetic sensor to shield the magnetic sensor from stray electromagnetic fields generated by the integrated circuit. The magnetic buffer layer may also absorb electromagnetic fields generated by other internal sources of the magnetic sensing device.

Abstract: An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, and as a result, improvement in reproduction output and strength against magnetic electrostatic damage can be realized. In addition, since the thickness of the central portion of the element is decreased, trend toward narrower gap can be realized. Furthermore, since the direction of magnetization of a free magnetic layer is oriented in the track width direction by shape anisotropy, means for orienting the magnetization is not necessary, and hence the structure and manufacturing method of the element can be simplified.

Abstract: In a magnetic detecting element, second ferromagnetic layers are deposited on respective second antiferromagnetic layers. The magnetization direction of the second ferromagnetic layers is antiparallel to that of first ferromagnetic layers. A static magnetic field generated by a surface magnetic charge at the internal side surfaces of the first ferromagnetic layers is absorbed by the second ferromagnetic layers. Thus, it becomes hard that the static magnetic field from the first ferromagnetic layers enters the central portion of a free magnetic layer. Consequently, the central portion of the free magnetic layer can maintain its single magnetic domain state, and, thus, the hysteresis can be reduced and the Barkhausen noise is suppressed.