Abstract: This specification is directed to a semiconductor device capable of reducing a leakage current by forming a first GaN layer including a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers, in a semiconductor device having the first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode and a drain electrode which are deposited in a sequential manner, and a fabricating method thereof. To this end, a semiconductor device according to one exemplary embodiment includes a first GaN layer, an AlGaN layer on the first GaN layer, a second GaN layer on the AlGaN layer, and a source electrode, a drain electrode and a gate electrode formed on a portion of the second GaN layer, wherein the first GaN layer comprises a plurality of GaN layers and FexNy layers interposed between the plurality of GaN layers.

Abstract: A magnetic artificial superlattice is composed of laminated thin films including two or more kinds of magnetic flaky particles (magnetic titania nanosheets) obtained by exfoliation of a layer titanium oxide in which Ti atoms in the lattice have been substituted with magnetic elements.

Abstract: The present invention relates to information storage media, and more particularly, to ultra-high density magnetic information storage media which comprises a plurality of discrete islands of magnetic material.

Abstract: An anisotropic thin-film rare-earth permanent magnet endowed with high magnetic characteristics by rendering a vapor-phase-grown thin film anisotropic in the layering direction. The atomic laminate units are formed by laminating a monoatomic layer of a rare earth element on a substrate of a non-magnetic material having, a flat smoothness and then by laminating an atomic laminate of a transition metal element having a plurality of monoatomic layers of a transition metal element, so that the atomic laminate units of a characteristic construction are laminated in a plurality of layers. As a result, each atomic laminate of the transition metal element has an easy magnetizable axis in the laminate direction of the monoatomic layers and which are sandwiched between a monoatomic layer of a rare-earth element so that an inverse magnetic domain is suppressed to establish a strong coercive force.