Abstract: A data device may have at least a magnetic lamination with a thermal retention structure deposited on a substrate and configured to maintain a predetermined temperature for a predetermined amount of time. Such predetermined temperature and amount of time may allow for the growth of a magnetic layer with a predetermined magnetic anisotropy.
Abstract: A recording medium includes a substrate, a recording layer provided with perpendicular magnetic anisotropy for recording of information, a foundation layer disposed between the substrate and the recording layer, an initial layer which is greater in surface tension than the foundation layer and held in contact with a recoding-layer-side surface of the foundation layer, and a functional layer held in contact with a recoding-layer-side surface of the initial layer.
Type:
Grant
Filed:
March 24, 2004
Date of Patent:
April 21, 2009
Assignee:
Fujitsu Limited
Inventors:
Takeshi Morikawa, Ken Tamanoi, Takuya Kamimura
Abstract: The object is to provide a thin film having high barrier properties and high translucency with no safety and health problems, which is capable of suppressing degradation due to moisture, oxygen and carbon dioxide gas and degradation due to the diffusion of impurities such as alkali metals and alkali earth metals, a deposition apparatus of the thin film, and products coated with the thin film by the deposition apparatus. Another object is to provide an extended usable range of the products of an environmentally friendly biodegradable material and a prolonged quality preservation period. The feature is that a single layer or laminated layer of a layer expressed by AlNxOy or layer expressed by AlxNy is deposited (coated) over the inner surface of a packaging film. The single layer or laminated layer thereof has high translucency, being capable of enhancing the barrier properties against moisture, oxygen and carbon dioxide gas, the heat resisting properties, and the mechanical strength.
Type:
Grant
Filed:
October 9, 2002
Date of Patent:
December 16, 2008
Assignee:
Semiconductor Energy Laboratory Co., Ltd.