Abstract: A method of manufacturing a magnetic recording medium including: forming a diffusion preventing layer, wherein the magnetic recording medium includes a non-magnetic substrate; an underlayer; a perpendicular magnetic layer; the diffusion preventing layer; and a protective layer, wherein the perpendicular magnetic layer has a multi-layer structure, the perpendicular magnetic layer includes an uppermost layer and at least one layer other than the uppermost layer, the uppermost layer including Co or Fe in magnetic particles, and the at least one layer other than the uppermost layer including an oxide, the diffusion preventing layer is provided between the perpendicular magnetic layer and the protective layer, and the diffusion preventing layer includes at least one component selected from a group consisting of Si, Ti, Cr, B, and Ru, or either a carbide, an oxide, or both, of the at least one component.

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.

Abstract: A magnetic stack includes a substrate and a soft magnetic underlayer deposited on a top surface of the substrate. A heat sink layer is disposed on top of the soft magnetic underlayer, and an interlayer is deposited on top of the heat sink layer. A non-magnetic seed layer is deposited on top of the interlayer. A magnetic recording structure which includes more than one magnetic recording layer is deposited on the top surface of the non-magnetic seed layer.

Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed on the substrate, and a conductive stack disposed within the dielectric layer. The conductive stack includes at least one first conductive layer, a second conductive layer disposed over the at least one first conductive layer, and a contact structure disposed between the at least one first conductive layer and the second conductive layer. The contact structure includes a contact via electrically connecting the at least one first conductive layer to the second conductive layer, and a glue layer conformal to sidewalls and a bottom surface of the contact via. The glue layer has isolated lattices and an amorphous region at which the isolated lattices are uniformly distributed.

Abstract: A scratch-resistant amorphous and transparent AlSiN cover layer on a glass or glass ceramic substrate is provided. The cover layer has a low surface roughness and has sliding properties with respect to pots and other items. The cover layer is transparent in the visible light range and also largely transparent in the infrared range and has good chemical resistance to salted water burn-in.

Abstract: A heat-assisted magnetic recording medium includes: a substrate; an underlayer; and a magnetic layer that is (001)-oriented. In the magnetic layer, a first magnetic layer and a second magnetic layer are stacked in this order from the underlayer side. The first magnetic layer and the second magnetic layer include an alloy having an L10 structure. The second magnetic layer includes a ferrite at grain boundaries of magnetic grains. The ferrite is one or more kinds selected from the group consisting of NiFe2O4, MgFe2O4, MnFe2O4, CuFe2O4, ZnFe2O3, CoFe2O4, BaFe2O4, SrFe2O4, and Fe3O4. A Curie temperature of the magnetic grains is lower than a Curie temperature of the ferrite.

Abstract: In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

Abstract: A perpendicular magnetic recording medium includes a non-magnetic substrate; an underlayer including first and second underlayers; and a magnetic recording layer including a layer having a granular structure including grains of a magnetic crystal and grain boundary portions, wherein the first underlayer has a NaCl structure with a (001) orientation and contains a nitride or an oxide of at least one element. The first underlayer may contain a nitride of at least one of Cr, V, Ti, Sc, Mo, Nb, Zr, Y, Al, and B, and the second underlayer may include a plurality of island-shaped regions and contain at least one of Mg, Ca, Co, and Ni. The first underlayer may contains an oxide of at least one of Mg, Ca, Co, and Ni, and the second underlayer may include net-shaped regions and contain at least one of Cr, V, Ti, Sc, Mo, Nb, Zr, Y, Al, B, and C.

Abstract: A recording medium having improved signal-to-noise ratio (SNR) capabilities includes a NiFeX-based magnetic seed layer over a soft magnetic underlayer, where X comprises an element that is soluble in and has a higher melting point than Ni. X may be selected from a group of elements, including ruthenium (Ru), which may facilitate growth of smaller grains and distributions in the corresponding magnetic recording layer(s).

Abstract: According to one embodiment, a magnetic recording medium includes an orientation control layer formed on a non-magnetic substrate, the orientation control layer made of a Ni alloy or Ag alloy having fcc structure, a non-magnetic seed layer made of Ag, Ge, and a metal X selected from the group consisting of Al, Mg, Au, and Ti, a non-magnetic intermediate layer made of Ru or Ru alloy, and a magnetic recording layer. The orientation control layer is in contact with the non-magnetic seed layer.

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract: A data storage device and associated methods may provide at least a data storage medium that is separated from a heat assisted magnetic recording data writer and is connected to a controller. The controller can be configured to change a laser power of the heat assisted magnetic recording data writer in response to a tested bit error rate of a median data track of a plurality of adjacent data tracks reaching an identified threshold.

Abstract: In one embodiment, a magnetic media suitable for HAMR recording includes a recording layer having first and second magnetic layers. The first magnetic layer has a first segregant between magnetic grains thereof, the first segregant being primarily C. Moreover, the second magnetic layer is formed above the first magnetic layer. The second magnetic layer has a second segregant between magnetic grains thereof, the second segregant being primarily C and a second component. Additional systems and methods are also described herein.

Abstract: A magnetic media having a novel cap layer that allows the cap layer having improved exchange coupling and reduced thickness. The cap layer is doped with a non-reactive element such as Ar, Kr, Xe, Ne or He preferably Ar. This doping reduces increases exchange coupling and reduces the dead layer, allowing the cap layer to be made thinner for reduced magnetic spacing and improved data recording performance.

Abstract: Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.

Abstract: A perpendicular magnetic recording medium includes a substrate, a soft magnetic layer, a pre-underlayer, an underlayer, and a main recording layer serving as a magnetic recording layer. The pre-underlayer contains seed crystal grains that serve as a base for crystal grains of the underlayer, and an addition substance that is added between the seed crystal grains and composed of an element having an atomic radius smaller than that of an element forming the seed crystal grains.

Abstract: A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information.

Abstract: Iron-platinum (FePt) based magnetic recording media structures that provide small grain size and isolated-grain configurations suitable for high-density magnetic recording. In one of the structures, the recording media structure includes a thin film containing grains of L10 FePt and boron as a segregant contained in intergranular regions located among the FePt grains. In another structure, the recording media structure includes a thin film containing grains of L10 FePt, wherein the film is formed on an underlayer containing at least one material selected to control the size of the FePt grains in the film. Proper choices of materials, relative amounts of the materials, processing parameters, and other variables permit these structures to be formed with grain sizes, magnetization orientations, and perpendicular coercivities that allow designers to create magnetic storage devices having storage densities of 1 Tbit/in2 and greater.

Abstract: According to one embodiment, a magnetic recording medium used in a heat assisted magnetic recording system includes a magnetic recording layer and a metal particle layer in which metal particles are arranged in a dispersed manner on a substrate. In the metal particle layer, percentage content of the metal particles in a second region positioned at an outer periphery side of a first region is higher than that of the first region in a surface direction of the substrate.

Abstract: Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Abstract: A perpendicular magnetic recording medium, comprising: a substrate; a buffer layer deposited in a first orientation on top of the substrate; an underlayer deposited in a second orientation on top of the buffer layer, the underlayer comprising an electrically conductive oxide; and a magnetic recording layer deposited on top of the underlayer and having an axis of magnetic anisotropy substantially perpendicular to the surface thereof.

Abstract: A thermally-assisted magnetic recording medium or a microwave-assisted magnetic recording medium includes: an orientation control layer (104) that is formed on a substrate (101); an underlayer (10) that is formed on the orientation control layer (104); and a magnetic layer (108) that is formed on the underlayer (10) and contains an alloy having an L10 type crystal structure as a main component, in which the underlayer (10) includes an MgO underlayer (107) that contains MgO and has a (100) orientation and a nitride underlayer (106) that contains at least one nitride selected from the group consisting of TaN, NbN, and HfN and has a (100) orientation.

Abstract: A thermally assisted magnetic recording medium (1) includes a substrate (101), an underlayer (3) that is formed above the substrate (101), and a magnetic layer (107) that is formed on the underlayer (3) and contains an alloy having an L10 structure as a main component. The underlayer (3) is formed by continuously laminating a first underlayer (104) having a BCC structure with a lattice constant that is 0.302 to 0.332 nm, a second underlayer (105) that has a NaCl structure including C, and a third underlayer (106) that is composed of MgO.

Abstract: Media may be produced with narrow c-axis dispersion while having small grain size and high grain density. A dual seed layer design and a substrate bias voltage may be applied during deposition of the seed layer are used in the media. In some embodiments, the first seed layer is an amorphous material because of a high content of elements with large atomic sizes. Application of the substrate bias during deposition of the second seed layer may reduce the grain size and may narrow c-axis dispersion.

Abstract: A magnetic recording medium includes a substrate, a magnetic layer including an alloy having a L10 type crystal structure as a main component thereof, and a plurality of underlayers arranged between the substrate and the magnetic layer. The plurality of underlayers include a first underlayer including two or more elements selected from a group consisting of Ta, Nb, Ti, and V, and one or more elements selected from a group consisting of W and Mo, and a second underlayer including MgO.

Abstract: A magnetic recording medium includes a substrate, a magnetic layer including an alloy having an L10 type crystal structure as a main component thereof, a plurality of underlayers arranged between the substrate and the magnetic layer, and a barrier layer made of a material having an NaCl structure. The plurality of underlayers include at least one crystalline underlayer including Mo as a main component thereof, and at least one of Si and C in a range of 1 mol % to 20 mol % and an oxide in a range of 1 vol % to 50 vol %. The barrier layer is provided between the magnetic layer and the at least one crystalline underlayer including Mo.

Abstract: Various embodiments provide for a heat assisted magnetic recording (HAMR) media comprising: a magnetic recording layer; a barrier layer disposed under the magnetic recording layer; a first underlayer disposed under the barrier layer; and an amorphous seedlayer disposed under the first underlayer. For some embodiments, the recording medium may comprise: a magnetic recording layer including FePt alloy, a CoPt alloy, or a FePd alloy; a barrier layer including MgO, TiC, TiN, CrN, TiCN, ?-WC, TaC, HfC, ZrC, VC, NbC, or NiO; a first underlayer including RuAl-oxide, NiAl, FeAl, AlMn, CuBe, or AlRe; or an amorphous seedlayer including a Cr—X alloy, where X comprises Al, B, C, Cu, Hf, Ho, Mn, Mo, Ni, Ta, Ti, V, W, or Ru.

Abstract: Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.

Abstract: A magnetic recording medium includes a substrate, a magnetic layer including a FePt alloy having a L10 type structure, and a plurality of underlayers arranged between the substrate and the magnetic layer, wherein at least one of the plurality of underlayers includes TiO2.

Abstract: A magnetic recording medium includes a substrate, a seed layer, an under layer, and a perpendicular recording layer having a granular structure. (Ms·?·?1.5(1?Rs)0.33), Ms, and ? satisfy (Ms·?·?1.5(1?Rs)0.33)?0.1 [?·emu·(mm)?1.5], Ms?450 [emu/cc], and ??1.2. In the above formulas, Ms indicates a saturated magnetization amount, ? indicates the gradient of a M-H loop around a coercive force Hc, ? indicates the thickness of the perpendicular recording layer, and Rs indicates a squareness ratio.

Abstract: A magnetic medium for perpendicular magnetic data recording having improved corrosion characteristics and reduced surface roughness. The magnetic medium includes an under-layer and a perpendicular magnetic recording layer formed over the under-layer. The under-layer can be formed of MgO and has an oxygen concentration that is greater at the perpendicular magnetic recording layer than it is away from the perpendicular magnetic recording layer.

Abstract: In a perpendicular magnetic recording medium having, over a substrate, a magnetic recording layer, an underlayer made of Ru or a Ru compound and provided below the magnetic recording layer, a pre-underlayer made of a nonmagnetic crystalline material, and a soft magnetic layer provided below the pre-underlayer, when the difference between the highest point and the lowest point of unevenness of the interface between the soft magnetic layer and the pre-underlayer, derived by a cross-sectional TEM image, is given as an interface roughness (nm) and the distance between the soft magnetic layer and the magnetic recording layer, excluding the soft magnetic layer and the magnetic recording layer, is given as a SUL-MAG distance (nm), interface roughness (nm)?0.4 (nm) and interface roughness×SUL-MAG distance (nm)?12 (nm) are satisfied.

Abstract: There is provided a magnetic recording medium including a base; a seed layer; a foundation layer; and a recording layer, the seed layer being disposed between the base and the foundation layer, having an amorphous state, including an alloy containing Ti, Cr and O, a percentage of Ti being 30 atomic % to 100 atomic % based on a total amount of Ti and Cr contained in the seed layer, and a percentage of O being 15 atomic % or less based on a total amount of Ti, Cr and O contained in the seed layer. Also, a production method thereof is provided.

Abstract: A magnetic medium for perpendicular magnetic data recording, having improved magnetic properties through use of a novel seed layer. The magnetic medium includes a substrate having a seed layer, a magnetic under-layer and a magnetic recording layer formed there-over. The seed layer includes an element selected from a first group of Cr, Co, Fe and Ni, and at least one element that is selected from the other elements of the first group or from a second group consisting of W, Mo and Ru. A buffer layer may be included between the substrate and the seed layer.

Abstract: Systems and methods for providing thermal barrier bilayers for heat assisted magnetic recording (HAMR) media are provided. One such HAMR medium includes a substrate, a heat sink layer on the substrate, a thermal barrier bilayer on the heat sink layer, the bilayer comprising a first thermal barrier layer on the heat sink layer and an amorphous underlayer on the first thermal barrier layer, and a magnetic recording layer on the amorphous underlayer, wherein a thermal conductivity of the first thermal barrier layer is less than a thermal conductivity of the amorphous underlayer.

Abstract: An object is to provide a perpendicular magnetic recording medium including a ground layer that prevents corrosion, while achieving a primary object of promoting finer magnetic particles of a magnetic recording layer and isolation of these magnetic particles. The structure of a perpendicular magnetic recording medium 100 according to the present invention includes, at least on a base 110: a magnetic recording layer 122 on which a signal is recorded; a ground layer 118 provided below the magnetic recording layer; a non-magnetic layer 116 for controlling crystal orientation of the ground layer; and a soft magnetic layer 114 provided below the non-magnetic layer. The ground layer 118 is configured to have three layers including, in an order from bottom, a first ground layer 118a and a second ground layer 118b that contain ruthenium, and a third ground layer 118c that contains a metal.

Abstract: Aspects of the present invention relate to a perpendicular magnetic recording (PMR) media stack and methods for fabricating the same. The PMR media stack has a novel grain isolation initiation layer (GIIL) and/or a novel exchange-break layer (EBL) that can improve the signal-to-noise performance of the PMR media stack. The PMR media stack includes a substrate, a soft underlayer on the substrate, an interlayer positioned on the soft underlayer, and a grain isolation initiation layer (GIIL) positioned on the interlayer, a magnetic layer positioned on the GIIL, and an exchange break layer (EBL) positioned on the magnetic layer. The GIIL and/or EBL includes a CoCrRu-oxide.

Abstract: This document discloses a perpendicular magnetic recording medium in which the magnetic anisotropy of a magnetic recording layer is raised and the thermal stability of recorded signals is improved without changing the conventional stacked configuration. A perpendicular magnetic recording medium is formed by stacking at least an intermediate layer, a second underlayer, and a magnetic recording layer in this order on a nonmagnetic base. The intermediate layer is either a single layer of Ru or a Ru-based alloy, or a stacked structure of a nonmagnetic alloy film including Co and Cr and a film of Ru or a Ru-based alloy. The second underlayer includes Co in the range from 30 at % to 75 at %, Cr in the range from 20 at % to 60 at %, and W in the range from 0.1 at % to 10 at %, and has a thickness in the range from 0.1 nm to 1.0 nm.

Abstract: Provided herein is an apparatus, including a plurality of spaced apart perpendicular magnetic elements. Each of the magnetic elements includes a respective discrete magnetic domain and each of the magnetic elements includes a magnetic recording layer comprising a Co1-x-yPtxCry alloy material, where 0.05?x?0.35 and 0?y?0.15.

Abstract: Various magnetic stack embodiments may be constructed with a soft magnetic underlayer (SUL) having a first thickness disposed between a substrate and a magnetic recording layer. A heatsink may have a second thickness and be disposed between the SUL and the magnetic recording layer. The first and second thicknesses may each be tuned to provide predetermined thermal conductivity and magnetic permeability throughout the data media.

Abstract: There is provided a perpendicular recording medium comprising: a substrate with a seed layer formed thereon; a soft underlayer formed on the seed layer; an orientation control layer formed on the soft underlayer; an intermediate layer formed on the orientation control layer; a flash layer formed on the intermediate layer, the flash layer comprising an oxide; and a recording layer formed on the flash layer.

Abstract: A perpendicular magnetic recording disk includes a template layer below a Ru or Ru alloy underlayer, with a granular Co alloy recording layer formed on the underlayer. substrate. The template layer comprises nanoparticles spaced-apart and partially embedded within a polymer material, with the nanoparticles protruding above the surface of the polymer material. A seed layer covers the surface of the polymer material and the protruding nanoparticles and an underlayer of Ru or a Ru alloy covers the seed layer. The protruding nanoparticles serve as the controlled nucleation sites for the Ru or Ru alloy atoms. The nanoparticle-to-nanoparticle distances can be controlled during the formation of the template layer. This enables control of the Co alloy grain diameter distribution as well as grain-to-grain distance distribution.

Abstract: A magnetic recording medium of the present invention includes an under layer formed on a substrate, and a magnetic layer, formed on the under layer, which contains an alloy having an L10-type crystal structure as a main component. The under layer includes, in order from the substrate side, a first under layer with a lattice constant a of 2.87 ??a<3.04 ?, a second under layer having a BCC structure with a lattice constant a of 3.04 ??a<3.18 ?, a third under layer having a BCC structure with a lattice constant a of 3.18 ??a<3.31 ?, and an upper under layer having a NaCl-type crystal structure. The first under layer has a B2 structure, or has a BCC structure containing Cr as a main component. In the magnetic recording medium of the present invention, information is recorded using a heat-assisted magnetic recording type, or a microwave-assisted magnetic recording type.

Abstract: Systems and methods for providing heat assisted magnetic recording (HAMR) media configured to couple energy from a near field transducer (NFT) are provided. One such method includes providing a magnetic recording layer including an L10 ordered FePt or an L10 ordered CoPt, selecting a plurality of preselected parameters for a coupling layer, the preselected parameters including a material, a preselected deposition temperature, and a preselected thickness, and depositing the coupling layer directly on the magnetic recording layer using the preselected parameters such that the coupling layer has an extinction coefficient greater than 0.1.

Abstract: Embodiments of the present invention help allow accurate control of the magnetization reversal in a magnetic recording layer in small reversal units, whereby high-density recording can be achieved. According to one embodiment, by forming an intermediate layer having a granular structure similar to that of the magnetic recording layer below the magnetic recording layer, a continuous crystal grain boundary is formed at the interface between the magnetic recording layer and the intermediate layer, thereby preventing incomplete formation of the crystal grain boundary found in the initial growth layer of the magnetic recording layer. The intermediate layer comprises a non-magnetic alloy comprising Co and Cr as its main components and an oxide such as Al, Cr, Hf. Mg, Nb, Si, Ta, Ti and Zr. Further, the average content of the oxygen element in the intermediate layer is in the range from 6 at % to 20 at %.

Abstract: An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure.

Abstract: Embodiments of the present invention include a recording medium comprising: a hard magnetic recording layer and an interlayer disposed under the hard magnetic recording layer, wherein the interlayer comprises an upper layer of Ru-based alloy and a lower layer of RuCo or ReCo alloy. Generally for embodiments of the present invention, the lower layer of RuCo or ReCo alloy is formed over a seed layer using a low-pressure sputter process, and the upper layer of Ru-based alloy is formed over the lower layer using a high-pressure sputter process.

Abstract: According to one embodiment, a magnetic recording medium includes a magnetic recording layer formed on a substrate and including magnetic grains and a grain boundary formed between the magnetic grains, the grain boundary includes a first grain boundary having a first thermal conductivity, and a second grain boundary formed on the first grain boundary and having a second thermal conductivity different from the first thermal conductivity, and at least one of the first and second grain boundaries suppresses thermal conduction.