Cationic Or Anionic Patents (Class 430/914)
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Patent number: 7264913Abstract: The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3, where, Y is a hydrocarbyl linking group of 1 to about 10 carbon atoms, R, R1, R? and R? are independently hydrogen, hydrocarbyl group of 1 to about 10 carbon atoms, halogen, —O(CO)Z, —C(CF3)2Z, —C(CF3)2(CO)OZ, —SO2CF3, —(CO)OZ, —SO3Z, —COZ, —OZ, —NZ2, —SZ, —SO2Z, —NHCOZ, —NZCOZ or —SO2NZ2, where Z is H or a hydrocarbyl group of 1 to about 10 carbon atoms, n=1–4, X is O, CO, S, COO, CH2O, CH2COO, SO2, NH, NL, OWO, OW, W, and where L and W are independently hydrocarbyl groups of 1 to about 10 carbon atoms, and m=0–3.Type: GrantFiled: November 21, 2002Date of Patent: September 4, 2007Assignee: AZ Electronic Materials USA Corp.Inventors: Hengpeng Wu, Shuji Ding-Lee, Zhong Xiang, Joseph E. Oberlander, Mark O. Neisser, Eleazar Gonzalez, Jainhui Shan
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Patent number: 7261994Abstract: A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.Type: GrantFiled: March 28, 2005Date of Patent: August 28, 2007Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Takayuki Hosono, Koki Tamura, Daisuke Kawana, Tomotaka Yamada
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Patent number: 7261993Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.Type: GrantFiled: October 21, 2004Date of Patent: August 28, 2007Assignee: E.I. du Pont de Nemours and CompanyInventors: Frank Leonard Schadt, III, Michael Fryd, Mookkan Periyasamy
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Patent number: 7258962Abstract: A positive-tone radiation-sensitive resin composition comprising: (A) a carbazole derivative shown by the following formula (1), (B) a photoacid generator containing a sulfonimide compound and an iodonium salt compound as essential components, and (C) an acid-dissociable group-containing resin which is insoluble or scarcely soluble in alkali, but becomes soluble in alkali when the acid-dissociable group dissociates is disclosed. wherein R1 and R2 are individually halogen atom, methyl, cyano, or nitro group, X is a C1-20 organic group, and h and i are 0-4. The resin composition is useful as a chemically amplified positive-tone resist excelling in focal depth allowance, sensitivity, resolution, pattern profile, and PED stability.Type: GrantFiled: April 29, 2005Date of Patent: August 21, 2007Assignee: JSR CorporationInventors: Tomoki Nagai, Takayuki Tsuji
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Patent number: 7258963Abstract: In a photosensitive resin, a photoresist composition having the photosensitive resin, and a method of forming a photoresist pattern by using the photoresist, the photosensitive resin includes a blocking group substituted for an acid. The photosensitive resin has a weight-average molecular weight of from about 6,000 up to about 8,000. The photosensitive resin has a blocking ratio of from about 5% up to about 40%.Type: GrantFiled: January 17, 2006Date of Patent: August 21, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Youn-Kyung Wang, Kyoung-Mi Kim, Young-Ho Kim, Jae-Hyun Kim
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Patent number: 7255973Abstract: A polymer comprising units derived from an exo-form ester and units derived from an ester having two hexafluoroisopropanol groups is used as a base resin to formulate a positive resist composition which, when exposed and developed by photolithography, is minimized in line edge roughness by swelling during development and residue after development, and improved in adhesion.Type: GrantFiled: April 8, 2005Date of Patent: August 14, 2007Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Tatsushi Kaneko
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Patent number: 7244545Abstract: The present invention provides a fluorinated compound having functional groups in a high concentration so that adequate characteristics of the functional groups can be obtained and having high transparency in a wide wavelength region, a fluoropolymer, and a process for its production. The present invention provides a fluorinated diene represented by the following formula (1): CF2?CFCH2CH(C(R1)(R2)(OH))CH2CH?CH2??(1) wherein each of R1 and R2 which are independent of each other, is a fluorine atom or a fluoroalkyl group having at most 5 carbon atoms.Type: GrantFiled: April 27, 2006Date of Patent: July 17, 2007Assignee: Asahi Glass Company, LimitedInventors: Yoko Takebe, Osamu Yokokoji
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Patent number: 7235342Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a hydroxy-containing additive; and a resist polymer derived from at least one first monomer. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The hydroxy-containing additive has the structure of Q—OH, where Q may include one or more cyclic structures. Q—OH may have a primary alcohol structure. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.Type: GrantFiled: January 28, 2004Date of Patent: June 26, 2007Assignee: International Business Machines CorporationInventors: Wenjie Li, Pushkara R. Varanasi
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Patent number: 7235344Abstract: A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.Type: GrantFiled: June 30, 2004Date of Patent: June 26, 2007Assignee: Intel CorporationInventors: Robert P. Meagley, Michael D. Goodner, Robert E. Leet, Michael L. McSwiney
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Patent number: 7220532Abstract: The present invention provides a chemical amplification type positive resist composition comprising a nitrogen containing compound of the formula (VIa) or (VIb); resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and an acid generator of the formula (I)Type: GrantFiled: September 9, 2003Date of Patent: May 22, 2007Assignee: Sumitomo Chemical Company, LimitedInventors: Yoshiyuki Takata, Isao Yoshida, Hirotoshi Nakanishi
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Patent number: 7217490Abstract: The invention includes new Si-containing monomers, polymers containing such monomers and photoresists that contain the polymers. Synthetic methods of the invention include reacting a vinyl carbocyclic aryl ester compound with a reactive silane compound to provide the monomer.Type: GrantFiled: March 3, 2003Date of Patent: May 15, 2007Assignee: Shipley Company, L.L.C.Inventors: George G. Barclay, Subbareddy Kanagasabapathy, Matthew A. King
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Patent number: 7217493Abstract: A positive resist composition comprising (A) polysiloxane or polysilsesquioxane that has a property of increasing solubility in an alkali developing solution by the action of an acid and contains a group capable of being decomposed with an acid, (B) a compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation and (C) an organic basic compound, wherein an amount of the compound that generates a sulfonic acid upon irradiation of an actinic ray or radiation is from 6 to 20% by weight based on the total solid content of the positive resist composition.Type: GrantFiled: May 7, 2004Date of Patent: May 15, 2007Assignee: Fujifilm CorporationInventors: Shoichiro Yasunami, Kazuyoshi Mizutani
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Patent number: 7217492Abstract: An onium salt compound having a cation moiety of the following formula (1) is disclosed. wherein A represents I or S, m is 1 or 2, n is 0 or 1, x is 1–10, and Ar1 and Ar2 are (substituted) aromatic hydrocarbon group, and P represents —O—SO2R, —O—S(O)R, or —SO2R, wherein R represents a hydrogen atom, a (substituted) alkyl group, or a (substituted) alicyclic hydrocarbon group. The onium salt compound is suitable as a photoacid generator for photoresists of a positive-tone radiation-sensitive resin composition. The positive-tone radiation-sensitive resin composition containing this compound is useful as a chemically-amplified photoresist exhibiting high resolution at high sensitivity, responsive to various radiations, and having outstanding storage stability.Type: GrantFiled: December 24, 2003Date of Patent: May 15, 2007Assignee: JSR CorporationInventors: Eiji Yoneda, Yong Wang, Yukio Nishimura
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Patent number: 7214467Abstract: The photosensitive resin composition of the present invention is an excellent photosensitive resin composition: exhibiting significant transmissibility at the use of an exposure light source of 160 nm or less, more specifically F2 excimer laser light, where line edge roughness and development time dependence are small and a problem of footing formation is improved; and comprising a resin which decomposes by an action of acid to increase the solubility in alkali developer, in which the resin contains a specific repeat unit; a compound capable of generating an acid upon irradiation with one of an actinic ray and a radiation, in which the compound includes at least two kinds of compounds selected from the group consisting of specific compounds (B1), (B2), (B3) and (B4).Type: GrantFiled: June 6, 2003Date of Patent: May 8, 2007Assignee: Fujifilm CorporationInventors: Shinichi Kanna, Kazuyoshi Mizutani, Tomoya Sasaki
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Patent number: 7214466Abstract: The invention is directed to a photoimageable composition comprising: (I) finely divided particles of inorganic material comprising: (a) functional phase particles selected from electrically conductive, resistive, and dielectric particles; (b) inorganic binder having a glass transition temperature in the range of from 325 to 600° C., a surface area of no greater than 10 m2/g and at least 85 wt. % of the particles having a size of 0.1–10 ?m; dispersed in: (II) an organic medium comprising: (a) aqueous developable polymer which is a copolymer, interpolymer or mixture thereof, wherein each copolymer or interpolymer comprises (1) a nonacidic comonomer comprising a C1-10 alkyl acrylate, C1-10 alkyl methacrylate, styrenes, substituted styrenes or combinations thereof and (2) an acidic comonomer comprising ethylenically unsaturated carboxylic acid containing moiety; (g) cationically polymerizable monomer; (h) photoinitiation system; and (i) organic solvent.Type: GrantFiled: December 14, 2005Date of Patent: May 8, 2007Assignee: E. I. du Pont de Nemours and CompanyInventors: Haixin Yang, Mark R. McKeever
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Patent number: 7208260Abstract: The present invention discloses a cross-linking monomer represented by the following Chemical Formula 1, a process for preparing a photoresist polymer using the same, and said photoresist polymer: <Chemical Formula> wherein, R? and R? individually represent hydrogen or methyl; m represents a number of 1 to 10; and R is selected from the group consisting of straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.Type: GrantFiled: February 22, 2002Date of Patent: April 24, 2007Assignee: Hynix Semiconductor Inc.Inventors: Jae Chang Jung, Keun Kyu Kong, Min Ho Jung, Geun Su Lee, Ki Ho Balk
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Patent number: 7205090Abstract: The present invention provides a chemical amplification type positive resist composition comprising (A) a resin which comprises (i) 5 to 50% by mol of a structural unit of the formula (I), (ii) 5 to 50% by mol of a structural unit of the formula (II) and (iii) 5 to 50% by mol of at least one selected from the group consisting of structural units of the formulas (III) and (IV), and (B) an acid generator. The present composition is suitable for excimer laser lithography using ArF, KrF and the like, and shows various outstanding resist abilities, specifically, gives better effective sensitivity and resolution to resist patterns obtained therefrom, and gives particularly excellent pattern shape and excellent line edge roughness.Type: GrantFiled: January 19, 2005Date of Patent: April 17, 2007Assignee: Sumitomo Chemical Company, LimitedInventors: Ichiki Takemoto, Kazuhiko Hashimoto, Satoshi Yamaguchi
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Patent number: 7198831Abstract: The curable pressure-sensitive adhesive sheet A of this invention comprises an optically transparent substrate on which the curable pressure-sensitive adhesive layer 2 is layered on and integrated therewith. The curable pressure-sensitive adhesive layer 2 comprises a curable pressure-sensitive adhesive composite comprising a cationically-polymerizable compound, a polymer and a photocationic polymerization initiator. Surface roughness Rt of a surface of the curable pressure-sensitive adhesive layer is 2 ?m or less.Type: GrantFiled: January 24, 2005Date of Patent: April 3, 2007Assignee: Sharp Kabushiki KaishaInventors: Noriko Watanabe, Takashi Sato, Yukihiro Sumida, Junichi Shimaoka
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Patent number: 7192686Abstract: Carborane based PAG's are bulky, produce a strong and large superacid, and have polarities that are compatible with the chemically amplified polymers typically used in photoresists. Carborane based PAG's also provide another broad class of bulky PAG's that may be used in photoresist formulations that offer flexibility in acid strength and polarity through changes in chemical structure. These PAG's may be used with EUV wavelengths, 157 nm, or 193 nm. Resolution and critical dimension control may be improved through the use of carborane based PAG's.Type: GrantFiled: March 31, 2004Date of Patent: March 20, 2007Assignee: Intel CorporationInventor: Robert P. Meagley
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Patent number: 7192681Abstract: A positive photosensitive composition comprising (A) an acid generator that generates an acid upon irradiation of an actinic ray or radiation, (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase solubility in an alkali developing solution, and (C) a specific basic compound.Type: GrantFiled: July 3, 2002Date of Patent: March 20, 2007Assignee: Fuji Photo Film Co., Ltd.Inventor: Toru Fujimori
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Patent number: 7192685Abstract: A positive resist composition comprising: (A) a fluorine atom-containing resin, wherein the resin comprises at least one group that increases a solubility of the resin in an alkali developer by the action of an acid; and (B) a sulfonium salt compound having a cation moiety, wherein the cation moiety contains at least one hydroxy group, and the sulfonium salt compound generates an acid upon irradiation with one of an actinic ray and a radiation.Type: GrantFiled: March 23, 2004Date of Patent: March 20, 2007Assignee: Fuji Photo Film Co., Ltd.Inventor: Kunihiko Kodama
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Patent number: 7179579Abstract: A radiation-sensitive composition comprising: (A) a compound capable of generating an acid upon irradiation with one of actinic rays and radiation, and (B) a resin containing a repeating unit having a specific group, which increases the solubility in an alkali developing solution by the action of an acid.Type: GrantFiled: May 27, 2003Date of Patent: February 20, 2007Assignee: Fuji Photo Film Co., Ltd.Inventor: Kazuya Uenishi
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Patent number: 7175974Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.Type: GrantFiled: March 27, 2006Date of Patent: February 13, 2007Assignee: Hynix Semiconductor Inc.Inventors: Jae-chang Jung, Ki-soo Shin
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Patent number: 7172848Abstract: There is provided a positive resist composition which enables the formation of a fine resist pattern, enables the angle of the taper shape within that resist pattern to be controlled to a suitable angle, and enables the formation of a resist pattern with an excellent depth width of focus. This positive resist composition is formed from a chemically amplified positive resist composition in which the light transmittance of a resist film of thickness 0.3 ?m, relative to light of wavelength 248 nm, is within a range from 20 to 75%.Type: GrantFiled: March 11, 2004Date of Patent: February 6, 2007Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventor: Hiroshi Shimbori
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Patent number: 7172849Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: GrantFiled: August 22, 2003Date of Patent: February 6, 2007Assignee: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan P. Mahorowala, David R. Medeiros, Dirk Pfeiffer, Karen Temple
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Patent number: 7169530Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or —SO2—; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a fType: GrantFiled: October 1, 2004Date of Patent: January 30, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinji Kishimura, Masayuki Endo, Masaru Sasago, Mitsuru Ueda, Hirokazu Imori, Toshiaki Fukuhara
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Patent number: 7160666Abstract: A photosensitive resin composition of the present invention comprises (A) a resin having a repeating unit represented by formula (IA) and a repeating unit containing an acid decomposable group and copolymerizable with formula (IA), which is decomposed under the action of an acid to increase the solubility in an alkali developer, (B1) a compound capable of generating an aliphatic or aromatic sulfonic acid substituted by at least one fluorine atom upon irradiation with actinic rays or radiation, (B2) a compound capable of generating an aliphatic or aromatic sulfonic acid containing no fluorine atom, or an aliphatic or aromatic carboxylic acid upon irradiation with actinic rays or radiation, and (C) a solvent.Type: GrantFiled: March 5, 2003Date of Patent: January 9, 2007Assignee: Fuji Photo Film Co., Ltd.Inventors: Kazuyoshi Mizutani, Shinichi Kanna
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Patent number: 7160669Abstract: The present invention provides a sulfonium salt of the formula (Ia) a polymeric compound comprising a structural unit of the formula (Ib) and a chemical amplification type positive resist composition comprising (A) an acid generator comprising at least one compound selected from the group consisting of a sulfonium salt of the formula (Ia), a polymeric compound comprising a structural unit of the formula (Ib), and a sulfonium salt of the formula (Ic); and (B) resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.Type: GrantFiled: October 10, 2003Date of Patent: January 9, 2007Assignee: Sumitomo Chemical Company, LimitedInventors: Airi Yamada, Yasunori Uetani, Akira Kamabuchi
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Patent number: 7157206Abstract: A positive resist composition comprising (A) a resin containing at least one group that is decomposed by the action of an acid to generate an alkali-soluble group and (B) at least two compounds selected from (B1) a compound that generates an aliphatic or aromatic sulfonic acid substituted with at least one fluorine atom, (B2) a compound that generates an aliphatic or aromatic sulfonic acid that does not contain a fluorine atom, (B3) a compound that generates an aliphatic or aromatic carboxylic acid substituted with at least one fluorine atom and (B4) a compound that generates an aliphatic or aromatic carboxylic acid that does not contain a fluorine atom, as (B) a compound that generates an acid upon irradiation of an actinic ray or radiation, wherein the group that is decomposed by the action of an acid contained in the resin (A) includes a group represented by formula (Y) defined in the specification.Type: GrantFiled: July 23, 2004Date of Patent: January 2, 2007Assignee: Fuji Photo Film Co., Ltd.Inventors: Haruki Inabe, Tomoya Sasaki
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Patent number: 7157204Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 ?m.Type: GrantFiled: November 7, 2003Date of Patent: January 2, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Myung Sup Jung, Yong Young Park, Sung Kyung Jung, Sang Yoon Yang
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Patent number: 7150961Abstract: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R? are as defined in the specification of the invention.Type: GrantFiled: February 27, 2004Date of Patent: December 19, 2006Assignee: Hynix Semiconductor Inc.Inventors: Min Ho Jung, Sung Eun Hong, Jae Chang Jung, Geun Su Lee, Ki Ho Baik
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Patent number: 7147984Abstract: Disclosed is a positive-working chemical-amplification photoresist composition used in the patterning works in the manufacture of semiconductor devices, with which quite satisfactory patterning of a photoresist layer can be accomplished even on a substrate surface provided with an undercoating film of silicon nitride, phosphosilicate glass, borosilicate glass and the like in contrast to the prior art using a conventional photoresist composition with which satisfactory patterning can hardly be accomplished on such an undercoating film. The photoresist composition comprises, besides a film-forming resin capable of being imparted with increased solubility in an alkaline solution by interacting with an acid and a radiation-sensitive acid-generating compound, a phosphorus-containing oxo acid such as phosphoric acid and phosphonic acid or an ester thereof.Type: GrantFiled: March 29, 2004Date of Patent: December 12, 2006Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Hiroto Yukawa, Katsumi Oomori, Ryusuke Uchida, Yukihiro Sawayanagi
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Patent number: 7135268Abstract: The present invention provides a sulfonate of the formula (I?): wherein Q1, Q2, Q3, Q4 and Q5 each independently represent hydrogen, alkyl having 1 to 16 carbon atoms, alkoxy having 1 to 16 carbon atoms, or electron attractive group, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 represents alkyl having 3 to 16 carbon atoms or alkoxy having 3 to 16 carbon atoms, and at least one of Q1, Q2, Q3, Q4 and Q5 is electron attractive group; and A?+ represents a counter ion of the formula (IIa), (IIb), (IIc) or (IId) which are identified in the specification.Type: GrantFiled: May 19, 2003Date of Patent: November 14, 2006Assignee: Sumitomo Chemical Company, LimitedInventors: Akira Kamabuchi, Yasunori Uetani, Hiroshi Moriuma
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Patent number: 7129015Abstract: A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula: wherein R1 is a hydrogen atom or a methyl group, X is a C1–C4 alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.Type: GrantFiled: November 6, 2003Date of Patent: October 31, 2006Assignee: Samsung Electronics Co., Ltd.Inventor: Sang-jun Choi
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Patent number: 7125640Abstract: A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.Type: GrantFiled: January 31, 2003Date of Patent: October 24, 2006Assignee: Infineon Technologies AGInventors: Jörg Rottstegge, Michael Sebald
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Patent number: 7122294Abstract: Photoacid generators (PAGs) comprising photoactive moieties and perfluorinated, multifunctional anionic moieties (or incipient anionic moieties) are disclosed which provide photoacids with high acid strength, low volatility and low diffusivity. The present invention further relates to photoacid generators as they are used in photoinitiated or acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.Type: GrantFiled: May 22, 2003Date of Patent: October 17, 2006Assignee: 3M Innovative Properties CompanyInventor: William M. Lamanna
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Patent number: 7118845Abstract: A process for fabricating of an article by exposing a photoreactive composition to light under multiphoton absorption conditions. The light passes through an optical system having a final optical element having a numeric aperture in a range of from 0.65 to 1.25, inclusive.Type: GrantFiled: June 5, 2003Date of Patent: October 10, 2006Assignee: 3M Innovative Properties CompanyInventors: Robert J. DeVoe, Harvey W. Kalweit, Catherine A. Leatherdale, Todd R. Williams
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Patent number: 7118846Abstract: A positive resist composition comprises (A) a resin comprising specific repeating units and coming to have enhanced solubility in an alkaline developing solution by the action of an acid and (B) a compound generating an acid by the action of actinic rays or a radiation.Type: GrantFiled: March 10, 2004Date of Patent: October 10, 2006Assignee: Fuji Photo Film Co., Ltd.Inventor: Tomoya Sasaki
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Patent number: 7108957Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.Type: GrantFiled: July 14, 2003Date of Patent: September 19, 2006Assignee: Hynix Semiconductor Inc.Inventors: Jae-chang Jung, Ki-soo Shin
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Patent number: 7108951Abstract: The photosensitive resin composition comprising: (A) a resin containing (A1) a repeating unit having at least two groups represented by the specific general formula; and (B) a compound capable of generating an acid by the action with one of an actinic ray and a radiation.Type: GrantFiled: February 26, 2003Date of Patent: September 19, 2006Assignee: Fuji Photo Film Co., Ltd.Inventors: Tomoya Sasaki, Kazuyoshi Mizutani, Shinichi Kanna
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Patent number: 7105267Abstract: In a resist composition comprising a base resin which is a high molecular weight structure free from an aromatic substituent group, a photoacid generator, and a solvent, the photoacid generator is a one capable of generating a perfluoroalkyl ether sulfonic acid. The resist composition has many advantages including excellent resolution, minimized size difference between isolated and densely packed patterns, and minimized line edge roughness.Type: GrantFiled: August 23, 2002Date of Patent: September 12, 2006Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Youichi Ohsawa, Tomohiro Kobayashi
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Patent number: 7105271Abstract: A negative resist composition and a method for patterning semiconductor devices using the composition are provided. The negative resist composition contains an alkali-soluble hydroxy-substituted base polymer, a silicon-containing crosslinker having an epoxy ring, and a photoacid generator. In the method for patterning semiconductor devices, fine patterns are formed according to a bi-layer resist process using the negative resist composition.Type: GrantFiled: March 26, 2003Date of Patent: September 12, 2006Assignee: Samsung Electronics, Co., LTDInventor: Sang-Jun Choi
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Patent number: 7087356Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.Type: GrantFiled: September 30, 2002Date of Patent: August 8, 2006Assignees: International Business Machines Corporation, JSR CorporationInventors: Mahmoud H. Khojasteh, Kuang-Jung Chen, Pushkara Rao Varanasi, Yukio Nishimura, Eiichi Kobayashi
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Patent number: 7083893Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, R1, R2, m, n, a, b and c are as defined in the description.Type: GrantFiled: November 21, 2003Date of Patent: August 1, 2006Assignee: Hynix Semiconductor Inc.Inventor: Geun Su Lee
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Patent number: 7081325Abstract: Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source. wherein R1, R2, R3, R4, R5, R6, R7, a, b and c are as defined in the description.Type: GrantFiled: November 21, 2003Date of Patent: July 25, 2006Assignee: Hynix Semiconductor Inc.Inventors: Sung Koo Lee, Jae Chang Jung
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Patent number: 7081326Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.Type: GrantFiled: March 11, 2004Date of Patent: July 25, 2006Assignee: International Business Machines CorporationInventors: Wenjie Li, Pushkara R. Varanasi
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Patent number: 7078147Abstract: A resist composition comprising a base polymer having sulfone or sulfonate units introduced therein is sensitive to high-energy radiation below 300 nm, is endowed with excellent adherence to substrates while maintaining transparency, and is suited for lithographic microprocessing.Type: GrantFiled: March 26, 2003Date of Patent: July 18, 2006Assignees: Shin-Etsu Chemical Co., Ltd., Matsushita Electric Industrial Co., LtdInventors: Yuji Harada, Jun Hatakeyama, Masaru Sasago, Masayuki Endo, Shinji Kishimura
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Patent number: 7078444Abstract: Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.Type: GrantFiled: January 5, 2005Date of Patent: July 18, 2006Assignee: 3M Innovative Properties CompanyInventors: William M. Lamanna, Gregory D. Clark, Richard M. Flynn, Zai-Ming Qiu
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Patent number: 7078156Abstract: A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.Type: GrantFiled: March 24, 2003Date of Patent: July 18, 2006Assignee: Samsung Electronics Co., Ltd.Inventor: Sang-Jun Choi
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Patent number: 7060414Abstract: A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.Type: GrantFiled: March 16, 2005Date of Patent: June 13, 2006Assignee: JSR CorporationInventors: Aki Suzuki, Makoto Murata, Hiromichi Hara, Eiichi Kobayashi