Abstract: A negative resist composition and a patterning method for semiconductor devices using the composition are provided. In one aspect, a negative resist composition comprises an alkali-soluble base polymer having an epoxy ring substituent, a silicon-containing crosslinker having multiple hydroxy groups, and a photoacid generator. In another aspect, a patterning method includes using the negative resist composition in a bi-layer resist process to form fine patterns.

Abstract: Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.

Abstract: A radiation-sensitive resin composition comprising: (A) a resin comprising a hydroxyl group or carboxyl group, of which the hydrogen atom has been replaced by an acid-dissociable group possessing an alkali dissolution controlling capability, the resin increasing the solubility in an alkaline aqueous solution when the acid-dissociable group dissociates, and a photoacid generator comprising (B-1) a sulfonium salt represented by 1-(3,5-dimethyl-4-hydroxyphenyl)tetrahydrothiophenium perfluoro-n-octanesulfonate and 1-(4-n-butoxy-1-naphthyl)tetrahydrothiophenium nonafluoro-n-butanesulfonate and (B-2) a sulfonium salt represented by triphenylsulfonium nonafluoro-n-butanesulfonate. The radiation-sensitive resin composition useful as a novel chemically amplified resist exhibiting excellent sensitivity and resolution to deep ultraviolet rays typified by an ArF excimer laser, superior pattern shape-forming capability, and the like.

Abstract: A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

Abstract: The present invention provides new high resolution nanocomposite resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite negative resists comprising a photoacid generating component, a styrene component, and an optional polyhedral oligosilsequioxane component are provided. Negative resists of this invention may also contain an optional methacrylate component. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A photosensitive composition of the present invention has excellent sensitivity and pattern profile, which comprises an acid generator having a specific structure.

Abstract: The present invention relates to a photosensitive composition useful at wavelengths between 300 nm and 10 nm which comprises a polymer containing a substituted or unsubstituted higher adamantane.

Abstract: Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Abstract: New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R?6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.

Abstract: Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.

Abstract: A photosensitive composition comprising a compound that generates an acid upon irradiation of an actinic ray or radiation (Component A), a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution (Component B), a performance adjusting agent (Component C) and a solvent (Component D), wherein a, b, c and d, which represents contents of Component A, Component B, Component C and Component D in terms of part by weight respectively, satisfy formulae (1) and (2) shown below, provided that c may be 0 (a+b+c)/(a+b+c+d)=0.03 to 0.10??(1) [(Number of aromatic ring included in molecule of Component A+1)×a]/(a+b+c)=0.05 to 0.80.

Abstract: A positive photoresist composition comprising: (A) an oxime sulfonate compound represented by the specific formula, (B) a resin comprising repeating units including a group represented by the specific formula and which increases the solubility in an alkaline developing solution by the action of an acid, and (C) a fluoroaliphatic-group-containing polymeric compound containing repeating units derived from a monomer represented by the specific formula.

Abstract: A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The negative photoresist composition comprises a radiation sensitive acid generator, a first polymer containing an alkoxymethyl amido group and a hydroxy-containing second polymer. The first and second polymers may also have a repeating unit having an aqueous base soluble moiety. The first and second polymers undergo acid catalyzed crosslinking upon exposure of the acid to radiation, producing a product that is insoluble in an aqueous alkaline developer solution.

Abstract: The present invention provides new high resolution resists applicable to next generation lithographies, methods of making these novel resists, and methods of using these new resists in lithographic processes to effect state-of-the-art lithographies. New nanocomposite resists comprising nanoparticles in a polymer matrix are provided in this invention. New chemically amplified resists that incorporate inorganic moieties as part of the polymer are presented herein, as are new chemically amplified resists that incorporate photoacid generating groups within the polymeric chain. Novel non-chemically amplified yet photosensitive resists, and new organic-inorganic hybrid resists are also provided herein. This invention and the embodiments described herein constitute fundamentally new architectures for high resolution resists.

Abstract: A sulfonate of the formula (I): wherein Q1, Q2, Q3, Q4 and Q5 each independently represents a certain substituent, and A+ represents a counter ion, with the proviso that at least one of Q1, Q2, Q3, Q4 and Q5 is a group of the formula (II) wherein R1 and R2 each independently an alkyl having 1 to 12 carbon atoms or the like; and a chemical amplification type positive resist composition comprising the sulfate of the formula (I) and a resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid.

Abstract: A chemically amplified photoresist composition comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) as photosensitive acid donor, at least one compound of the formula Ia, Ib, Ic, IIb or IIc wherein R1 is for example C1-C5alkyl, C3-C30cycloalkyl, C1-C5haloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, C6-C12bicycloalkenyl, phenyl, naphthyl, anthracyl, phenanthryl, or is a heteroaryl radical; all of which are unsubstituted or substituted; optionally some of the substituents form 5- or 6-membered rings with further substituents on the phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl ring or with one of the carbon atoms of the phenyl, naphtyl, anthracyl, phenanthryl, or heteroaryl ring; R?1 is for example C1-C12alkylene, C3-C30cycloalkylene, phenylene, naphtylene, diphenylene, or oxydiphenylene, wherein these radicals are unsubstituted or substituted; A and B for example are a direct bond; Ar1 and Ar2 independently of ea

Abstract: Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R1 is a moiety containing an ethylenically unsaturated polymerizable group, R2 is a C1-C3 alkylene group, and R3 is a C1-10 linear or cyclic alkyl group, a C6-10 aromatic or substituted aromatic group, a C1-8 alkoxy methyl, or a C1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.

Abstract: A positive photosensitive composition comprising (A) a specific acid generator that generates an acid upon irradiation of an actinic ray or radiation, and (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase solubility in an alkali developing solution.

Abstract: A finely patterned silica type ceramic film suitable as an inter-layer dielectric is formed in a short time by applying, onto a substrate, a positive working radiation sensitive polysilazane composition comprising a modified poly(sil sesquiazane) having a number average molecular weight of 100 to 100,000 and containing a basic constituent unit represented by the general formula: —[SiR6(NR7)1.5]— and other constituent units represented by the general formula: —[SiR62NR7]— and/or —[SiR63(NR7)0.5]— (R6 and R7 independently represent a hydrogen atom, a C1-3 alkyl group or a substituted or unsubstituted phenyl group) in a ratio of 0.

Abstract: A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Antireflective compositions are provided that contain an ionic thermal acid generator material. Use of such a thermal acid generator material can significantly increase the shelf life of solutions of antireflective compositions in protic media. Antireflective compositions of the invention can be effectively used at a variety of wavelengths used to expose an overcoated photoresist layer, including 248 nm and 193 nm.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: A photoacid compound having the following general structure: R—O(CF2)nSO3X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q— wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

Abstract: Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y? represents a counter ion.

Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that generate an ?,?-difluoroalkyl sulfonic acid upon exposure to activating radiation. Positive- and negative-acting chemically amplified resists that contain such PAGs are particularly preferred. The invention also includes methods for synthesis of such PAGs and ?,?-difluoroalkyl sulfonic acids.

Abstract: A photosensitive polymer including silicon and a resist composition using the same are disclosed. The photosensitive polymer has the following formula 1. In formula 1, R1 of the first monomer and R3 of the third monomer are an alkyl group. R2 of the first monomer is hydrogen, alkyl, alkoxy, or carbonyl. The X of the first monomer is an integer selected from 1 to 4. Further, m/(m+n+p) is about 0.1 to about 0.4, n/(m+n+p) is about 0.1 to about 0.5, and p/(m+n+p) is about 0.1 to about 0.4.

Abstract: A chemically amplified resist material comprising a base resin and a photo acid generator having sensitivity at the wavelength of patterning exposure; wherein, the chemically amplified resist material further comprising an activator that generates an acid or a radical by a treatment other than the patterning exposure. A patterning method using the same is also disclosed.

Abstract: Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.

Abstract: A photopolymerizable composition that is cured with visible light or an infrared laser and is used as a recording layer in a negative planographic printing plate precursor. The photopolymerizable composition is cured by exposure and includes (A) a polymerizable compound that is solid at 25° C. and has at least one radical-polymerizable ethylenically unsaturated double bond in a molecule, (B) a radical polymerization initiator, (C) a binder polymer and, as required, (D) a compound generating heat by infrared exposure.

Abstract: A chemical amplification, positive resist composition is provided comprising (A) a photoacid generator and (B) a resin which changes its solubility in an alkali developer under the action of acid and has substituents of the formula: C6H11—(CH2)nOCH(CH2CH3)— wherein C6H11 is cyclohexyl and n=0 or 1. The composition has many advantages including improved focal latitude, improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect left after coating, development and stripping, and improved pattern profile after development and is suited for microfabrication by any lithography, especially deep UV lithography.

Abstract: A positive photosensitive composition containing (A) an acid generator capable of generating an acid by irradiation with actinic ray or radiation and having a structure represented by formula (I) defined in the specification and (B) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure and being decomposed by the action of an acid to increase solubility in an alkali developer.

Abstract: A chemically-amplified resist composition is disclosed, which comprises a polymer of formula (I) below: 1

Abstract: A sulfonyloxime compound is provided which is represented by a general formula (1): wherein, R1 represents a hydrogen atom, an alkyl group, an aryl group, or a heteroaryl group; R2 represents an alkyl group, an aryl group, or a heteroaryl group; X represents a halogen atom; Y represents —R3, a —CO—R3 group, —COO—R3 group, —CONR3R4 group, —S—R3 group, —SO—R3 group, —SO2—R3 group, a —CN group or a —NO2 group, and R3 and R4 within the Y group each represent a hydrogen atom, an alkyl group, an aryl group, or a heteroaryl group, although any two of R1, R2 and R3 may also be bonded together to form a cyclic structure, and furthermore dimers of a compound represented by the general formula (1) in which R1, R2 or Y groups from separate molecules are bonded together to form a single bivalent group, are also possible.

Abstract: The present invention provides a sulfonium salt represented by the following formula (I): wherein Q1, Q2 and Q3 each independently represent hydrogen, hydroxy, alkyl having 1 to 6 carbon atoms, or alkoxy having 1 to 6 carbon atoms, but all of Q1, Q2 and Q3 are not the same; and Q4 and Q5 each independently represent perfluoroalkyl having 1 to 8 carbon atoms. The present invention also provides a chemical amplifying type positive resist composition having the sulfonium salt above and a resin which contains a structural unit having a group that is unstable to acid and which is insoluble or slightly soluble by itself in an aqueous alkali, but becomes soluble in the aqueous alkali by an action of acid. The present invention further provides a polymerization initiator composition having the sulfonium salt above and a sensitizer.

Abstract: Disclosed are photoimageable compositions having improved stripping properties including a photoresist strip enhancer. Also disclosed are methods of enhancing the strippability of photoimageable compositions and methods for manufacturing printed wiring boards using such photoimageable compositions.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) acrylate or methacrylate ester units each having a solubility-reducing group capable of being eliminated in the presence of an acid; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an iodonium salt containing a fluoroalkyl sulfonate ion having 3 to 10 carbon atoms as the anion such as bis(4-tert-butylphenyl) iodonium nonafluorobutane sulfonate.

Abstract: Provided are a PED-stabilizer-containing resist material having high sensitivity and high resolution, and sufficient PED stability; and a pattern forming method using the resist material. More specifically, the resist material contains at least one compound selected from thiol derivatives, disulfide derivatives and thiolsulfonate derivatives. This resist material may further contain a dissolution inhibitor and/or surfactant. The pattern forming method comprises steps of applying the resist material to a substrate; after a heat treatment, exposing the substrate to a high energy beam or electron beam through a photomask; and after an optional heat treatment, developing the resist material with a developer.

Abstract: A positive photosensitive composition comprising (A1) a compound that generates an alkanesulfonic acid in which the &agr;-position is substituted with a fluorine atom upon irradiation of an actinic ray or radiation, (A2) an onium salt of an alkanesulfonic acid in which the &agr;-position is not substituted with a fluorine atom, and (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase a solubility rate in an alkali developing solution.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.

Abstract: A positive resist composition comprising: (A) a polymer having a silicon atom in a side chain thereof, which is insoluble or sparingly soluble in an aqueous alkali solution and becomes soluble in an aqueous alkali solution by an action of an acid; and (B) an acid generator capable of generating an acid on exposure to active light rays or a radiation, which is represented by the formula (I) defined in the present specification.

Abstract: The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Abstract: The invention provides a negative image-recording material for heat-mode exposure systems, which comprises (A) an IR absorbent including cyanine dye having a substituent that contains an atom having an atomic weight of at least 28 such as halogen atom, or a substituent that contains a non-covalent electron pair such as carbonyl group, (B) a radical generator and (C) a radically-polymerable compound, and which is imagewise exposed to IR rays for image formation thereon.

Abstract: The present invention provides a resin of the formula: where R1, R2, R3, x and y are those defined herein. The present invention also provides methods for using the above described resin to inhibit reflection of light from the lower layer of a wafer substrate during a photoresist pattern formation process.

Abstract: Imageable elements with improved dot stability are disclosed. The imageable elements comprise a layer of an imageable composition over a support. The imageable composition comprises an infrared absorbing compound, an acid generator, an acid activatable crosslinking agent, a polymeric binder, and about 0.01 wt % to 1 wt % of an added onium compound. The elements may be thermally imaged and developed to produce images useful as lithographic printing plates.

Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Abstract: A positive-working resist composition comprising (A) a specific resin which has an aliphatic cyclic hydrocarbon group and enhances in the dissolution rate in an alkaline developing solution by an action of an acid, and (B) a specific compound generating an acid by irradiation of actinic ray or radiation. The composition is excellent in the resolving power and the exposure margin, and can be suitably used for micro-photofabrication using far ultraviolet rays, particularly ArF eximer laser beams.

Abstract: To provide a lower layer resist composition for a silicon-containing two-layer resist, which is excellent in the dry etching resistance and film thickness uniformity. A lower layer resist composition for a silicon-containing two-layer resist, comprising (a) a phenol-based polymer, (b) a compound capable of generating a sulfonic acid at a temperature of 100° C. or more, (c) a phenol-based acid crosslinking agent having two or more benzene rings and capable of crosslinking with the polymer under the action of an acid, and (d) a solvent.

Abstract: A method of colouring a polymeric material containing a) a latent acid, b) a colour former and c) optionally further ingredients by irradiation with UV-light.

Abstract: The invention describes the use of oxime alkyl sulfonate compounds of formula 1 R0 is either an R1—X group or R2; X is a direct bond, an oxygen atom or a sulfur atom; R1 is hydrogen, C1-C4alkyl or a phenyl group which is unsubstituted or substituted by a substituent selected from the group consisting of chloro, bromo, C1-C4alkyl and C1-C4-alkyloxy; R2 is hydrogen or C1-C4alkyl; and R3 is straight-chain or branched C1-C12alkyl which is unsubstituted or substituted by one or more than one halogen atom; as photosensitive add generator in a chemically amplified photoresist which is developable in alkaline medium and which is sensitive to radiation at a wavelength of 340 to 390 nanometers and correspondingly composed positive and negative photoresists for the above-mentioned wavelength range.