Subjecting Work To Diverse Treatments Or Graduated Temperatures Patents (Class 432/18)
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Patent number: 11919818Abstract: A rapid sintering system and rapid sintering method, the rapid sintering system comprising: a furnace body (110) comprising a hearth (111) and a furnace mouth (112) that communicate with each other; a lifting device (120) arranged below the furnace mouth (112), comprising a support (122) and a sample stage (121), the sample stage (121) being disposed on the support (122); a temperature acquisition device (130), disposed on the sample stage (121); a control device (140), disposed outside of the hearth (111), electrically connected to the lifting device (120) and the temperature acquisition device (130) and used to control lifting of the lifting device (120) according to a temperature acquired by the temperature acquisition device (130) and a preset sintering condition; and a spacer (150), disposed at a first end of the lifting device (120), a first spacing being present between the spacer (150) and the sample stage (121), and the furnace mouth (112) is blocked by the spacer (150) when the rapid sintering systeType: GrantFiled: August 28, 2017Date of Patent: March 5, 2024Assignee: Liaoning Upcera Co., Ltd.Inventors: Lingling He, Wanting Xia, Ying Guo, Yingying Bai, Chengwei Han
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Patent number: 10829413Abstract: A process for producing a highly calcined and uniformly calcined product from a feedstock. The process comprising the steps of grinding the feedstock to powder, preheating the powder, and calcining the powder in a reactor plant that comprises a number of reactor segments in which a flash calciner is used in each progressive reactor segment to incrementally react the powder by raising the temperature in each segment. The last segment may be a high-temperature reactor that has a controlled residence time and temperature that may allow controlled finishing of the calcination process to achieve a desired degree of calcination and sintering of the product; and cooling of the product.Type: GrantFiled: November 11, 2015Date of Patent: November 10, 2020Assignee: Calix LtdInventor: Mark Sceats
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Patent number: 9181600Abstract: The present invention relates to a heat treatment apparatus and a heat treatment method that control temperature distribution during cooling. There is provided a cooling step in which a heated treatment object is cooled using a cooling liquid in mist form, and heat treatment is performed by alternatingly repeating a first step (K1) in which the treatment object is cooled at a first mist density, and a second step (K2) in which the treatment object is cooled at a second mist density that is less dense than the first mist density.Type: GrantFiled: December 25, 2009Date of Patent: November 10, 2015Assignee: IHI CORPORATIONInventor: Kazuhiko Katsumata
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Patent number: 9034199Abstract: A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.Type: GrantFiled: October 24, 2012Date of Patent: May 19, 2015Assignee: Applied Materials, Inc.Inventors: Ren-Guan Duan, Thorsten Lill, Jennifer Y. Sun, Benjamin Schwarz
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Publication number: 20150044621Abstract: In a substrate treatment process, substrates are moved by a transporting device in a transporting direction through a substrate treatment installation having a number of chambers. The substrates are moved by transporting sections of the transporting device driven independently of one another. The transporting sections are driven such that, if substrates dwell temporarily in the transporting section, they are moved back and forth. Stresses in a substrate brought about by differing inputs of heat as a result of both process-induced and malfunction-induced dwell times of the substrate in a chamber are reduced by compensating within the chamber for a structurally brought about input of heat into the substrate, varying periodically over the length of the chamber, during temporary dwelling of the substrate in the chamber by moving the substrate back and forth over at least one period of the heat input by a change of the transporting direction.Type: ApplicationFiled: July 29, 2014Publication date: February 12, 2015Inventors: Steffen MOSSHAMMER, Thomas MEYER, Michael BRANDT
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Publication number: 20150034829Abstract: A radiation sensor may include a scintillator, a reflector, and a sensor. The scintillator may be capable of converting non-visible radiation into scintillation light. The reflector may be formed from material of outside surfaces of the scintillator, to reflect the scintillation light. The sensor may be positioned in proximity to the scintillator, to detect the scintillation light from the scintillator. A method of manufacturing a scintillator with an intrinsic reflector may include heating the scintillator in an oxygen-deficient environment at a first temperature for a first predetermined time period, and optionally annealing the scintillator in an oxygenated environment at a second temperature for a second predetermined time period.Type: ApplicationFiled: July 24, 2014Publication date: February 5, 2015Inventors: Merry Koschan, Mohit Tyagi
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Publication number: 20150017072Abstract: Inorganic fibers include a surface and a structure. The surface has a friction coefficient of about 0.5 or greater. The friction coefficient is measured using a scanning probe microscope. The structure is to constitute a holding sealing material to be provided in an exhaust gas purifying apparatus.Type: ApplicationFiled: July 8, 2014Publication date: January 15, 2015Applicant: IBIDEN CO., LTD.Inventors: Akihito NISHI, Yoji KITAMURA
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Publication number: 20140334106Abstract: Embodiments herein relate to a heat sink having nano- and/or micro-replication directly embossed in a bulk solidifying amorphous alloy comprising a metal alloy, wherein the heat sink is configured to transfer heat out of the heat sink by natural convection by air or forced convection by air, or by fluid phase change of a fluid and/or liquid cooling by a liquid. Other embodiments relate apparatus having the heat sink. Yet other embodiments relate to methods of manufacturing the heat sink and apparatus having the heat sink.Type: ApplicationFiled: October 20, 2011Publication date: November 13, 2014Inventors: Christopher D. Prest, Joseph Poole, Joseph W. Stevick, Quoc Tran PHAM, Theodore Andrew Waniuk
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Publication number: 20140311111Abstract: The present invention relates to a porous alpha-SiC-containing shaped body with a gas-permeable, open-pored pore structure comprising platelet-shaped crystallites which are connected to form an interconnected, continuous skeletal structure, wherein the skeletal structure consists of more than 80 wt.-% alpha-SiC, relative to the total weight of SiC, a process for producing same and its use as a filter component.Type: ApplicationFiled: November 19, 2012Publication date: October 23, 2014Inventor: Leif Stiholt
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Publication number: 20140246220Abstract: The present invention related to an electrical element (100, 101, 102) including an electrically conductive element (3, 5, 10, 31, 32, 51), characterized in that the electrical element also includes a first layer (1) of a polymer material with electrical conductivity gradient obtained from a polymer composition including at least one polymer and conductive carbonaceous fillers.Type: ApplicationFiled: September 27, 2012Publication date: September 4, 2014Inventors: Arnaud Allais, Jerome Fournier, Lazhar Kebbabi
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Publication number: 20140230723Abstract: Provided are: a method for producing a ?-Ga2O3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a ?-Ga2O3 substrate includes a step for cutting out a ?-Ga2O3 substrate from a ?-Ga2O3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the ?-Ga2O3 crystal before cutting out the ?-Ga2O3 substrate, or on the cut-out ?-Ga2O3 substrate.Type: ApplicationFiled: October 12, 2012Publication date: August 21, 2014Applicant: Tamura CorporationInventors: Takekazu Masui, Yu Yamaoka
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Patent number: 8807993Abstract: A system and method for the calcination of minerals.Type: GrantFiled: April 2, 2007Date of Patent: August 19, 2014Assignee: Calix Ltd.Inventors: Mark Geoffrey Sceats, Patricia Richardson
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Publication number: 20140117513Abstract: Technologies are described effective to implement systems and methods of producing a material. The methods comprise receiving a tertiary semiconductor sample with a dilute species. The sample has two ends. The first end of the sample includes a first concentration of the dilute species lower than a second concentration of the dilute species in the second end of the sample. The method further comprises heating the sample in a chamber. The chamber has a first zone and a second zone. The first zone having a first temperature higher than a second temperature in the second zone. The sample is orientated such that the first end is in the first zone and the second end is in the second zone.Type: ApplicationFiled: October 25, 2013Publication date: May 1, 2014Applicant: Brookhaven Science Associates, LLCInventors: Ralph B. James, Giuseppe Camarda, Aleksey E. Bolotnikov, Ryan Tappero, Yonggang Cui, Anwar Hosaain, Yang Ge, Kihyun Kim
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Publication number: 20140076516Abstract: In a heat treatment apparatus, crystallization can be performed at a relatively low temperature, thereby limiting size of a crystal grain diameter even when a long period of time such as several dozen hours is taken. The heat treatment apparatus is provided with a first temperature mechanism having a heater heating a base material on the back side of the base material as well as a mechanism cooling the front surface of the base material by using coolant on the front surface side of the base material, a second temperature mechanism heating the front surface side of the base material by using any of atmospheric plasma unit, laser and a flash lamp, a third temperature mechanism having a heater heating the base material from the front surface side of the base material, in which the first to third temperature mechanisms are sequentially arranged in this order, and a movement mechanism relatively moves the first to third temperature mechanisms.Type: ApplicationFiled: September 13, 2013Publication date: March 20, 2014Applicant: Panasonic CorporationInventors: MITSUO SAITOH, TOMOHIRO OKUMURA
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Publication number: 20140065563Abstract: A material heating method includes: a step of charging a silicon-containing carbon steel material into a heating furnace; a step of preheating the material; a first heating step of raising the temperature of the material; a second heating step of lowering the temperature of the material so as to reduce a temperature difference between the surface and inside of the material; a third heating step of raising the temperature of the material; and a soaking step of reducing the temperature difference between the surface and inside of the material. The temperature of the material in the heating furnace is maintained at the melting point of fayalite or lower.Type: ApplicationFiled: November 13, 2013Publication date: March 6, 2014Applicant: HYUNDAI STEEL COMPANYInventors: Gap Soo Lim, Yong Kook Park, Kwan Hyung Lee, Jong Hyob Lim
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Publication number: 20140045130Abstract: A method for heating a shaped component (2) for a subsequent press hardening operation is described, wherein the shaped component (2) is firstly heated to a predefined temperature and subsequently regionally heated to a higher temperature by means of heating elements (7), which are drivable independently of one another, of a heating element panel (10). In order to ensure an advantageous temperature profile, it is proposed that the shaped component (2) be heated during its conveyance through the heating element panel (10) with the aid of the heating elements (7), which are arranged with respect to the conveyance direction (3) in longitudinal and transverse rows (8 and 9) and are drivable at least in groups using differing heating power.Type: ApplicationFiled: June 30, 2011Publication date: February 13, 2014Applicant: EBNER INDUSTRIEOFENBAU GMBHInventors: Gerald Eckertsberger, Eduard Morbitzer, Robert Ebner, Fritz Josef Ebner
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Publication number: 20130313266Abstract: Method to improve the barrier properties of composite gas cylinders and high pressure gas cylinder having enhanced barrier properties. The instant invention pertains to a new method for improving the barrier properties of composite gas cylinders for the storage of gas, by wrapping the outer surface of a composite gas cylinder with a plastic film comprising a barrier material in a winding process. The composite gas cylinder comprises an inner liner made of polyolefin and an outer fibre-reinforced, pressure supporting layer. The barrier material may comprise polyamide, polyester, halogen substituted polymer, EVOH or a metallization. The invention pertains also to a high pressure composite gas cylinder having enhanced barrier properties and its use as a fuel tank in gas driven automotive vehicles equipped with a combustion engine.Type: ApplicationFiled: January 18, 2012Publication date: November 28, 2013Applicant: Basell Polyolefine GmbHInventors: Roland Andernach, Thomas Lindner
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Publication number: 20130309621Abstract: A method for adjusting the warpage of a wafer, includes providing a wafer having a center portion and edge portions and providing a holding table having a holding area thereon for holding the wafer. The wafer is placed onto the holding table with the center portion higher than the edge portions and thereafter pressed onto the holding area such that the wafer is attracted to and held onto the holding table by self-suction force. The wafer is heated at a predetermined temperature and for a predetermined time in accordance with an amount of warpage of the wafer in order to achieve a substantially flat wafer or a predetermined wafer level.Type: ApplicationFiled: May 18, 2012Publication date: November 21, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hui-Min HUANG, Chih-Wei LIN, Wen-Hsiung LU, Ming-Da CHENG, Chung-Shi LIU
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Publication number: 20130216821Abstract: A ceramic article having a ceramic substrate and a ceramic coating with an initial porosity and an initial amount of cracking is provided. The ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The ceramic article is then cooled at the ramping rate, wherein after the heat treatment the ceramic coating has a reduced porosity and a reduced amount of cracking.Type: ApplicationFiled: January 18, 2013Publication date: August 22, 2013Applicant: APPLIED MATERIALS, INC.Inventor: APPLIED MATERIALS, INC.
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Publication number: 20130216783Abstract: A machined ceramic article having an initial surface defect density and an initial surface roughness is provided. The machined ceramic article is heated to a temperature range between about 1000° C. and about 1800° C. at a ramping rate of about 0.1° C. per minute to about 20° C. per minute. The machined ceramic article is heat-treated in air atmosphere. The machined ceramic article is heat treated at one or more temperatures within the temperature range for a duration of up to about 24 hours. The machined ceramic article is then cooled at the ramping rate, wherein after the heat treatment the machined ceramic article has a reduced surface defect density and a reduced surface roughness.Type: ApplicationFiled: October 24, 2012Publication date: August 22, 2013Applicant: APPLIED MATERIALS, INC.Inventor: Applied Materials, Inc.
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Publication number: 20130164700Abstract: A sintering method for a tantalum capacitor anode block, characterized in that: inserting a tantalum anode block molded from a tantalum powder mixed with an adhesive into a drying oven injected with a degreasing solvent; conducting hermetically low temperature solvent catalytic wet dewaxing; conducting vacuum drying; and conducting vacuum sintering. The tantalum anode block is obtain by the present invention has high specific surface area and high porosity, so the specific capacity is high, current leakage is small, and the carbon content and oxygen content is reduced to 0.005%˜0.010% and 0.18%˜0.65%, respectively.Type: ApplicationFiled: November 20, 2012Publication date: June 27, 2013Applicant: Taike Technology (Suzhou) Co., Ltd.Inventor: Taike Technology (Suzhou) Co., Ltd.
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Patent number: 8470092Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.Type: GrantFiled: August 19, 2008Date of Patent: June 25, 2013Assignee: International Business Machines CorporationInventors: Ulrich Karl Klostermann, Wolfgang Raberg, Philip Trouilloud
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Publication number: 20130157136Abstract: An electrochemical cell manufactured by coating a conductive substrate of an electrode with a disordered carbon active material using a water-based binder slurry. An exemplary binder slurry includes at least one disordered carbon material, carboxymethyl cellulose (CMC), styrene butadiene rubber (SBR), and water.Type: ApplicationFiled: December 15, 2011Publication date: June 20, 2013Applicant: ENERDEL, INC.Inventor: Mark Balicki
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Publication number: 20130130186Abstract: The invention relates to a method and equipment for the continuous sintering of mineral material in a sintering furnace (S). In the method, a material bed (2) is formed on a conveyor base (1), the material bed (2) is conveyed by the conveyor base (1) through the process zones (I-VII) of the sintering furnace that have different temperatures, the zones including at least one drying zone (I), at least one cooling zone (VII), and at least one other process zone (II, III, IV, V, VI) between the said drying zone and cooling zone, and gas is conducted through the conveyor base and the material bed (2), when the material bed travels through the process zones (I-VII), and gas is circulated in a circulation gas duct (3) from the last cooling zone (VII) to the drying zone (I). Part of the gas flow that is conducted to the drying zone (I) in the circulation gas duct (3) is removed as an exhaust gas flow (B) by the exhaust gas blower (5) of an exhaust gas duct (4).Type: ApplicationFiled: September 21, 2011Publication date: May 23, 2013Applicant: OUTOTEC OYJInventor: Päivi Oikarinen
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Publication number: 20130108974Abstract: Heat recovery devices and methods for carbon baking furnaces are presented in which at least a portion of the waste heat from the cooling section is recycled through the furnace, which not only reduces the amount of natural gas required, but also increases the oxygen content in the furnace thereby reducing undesirable pitch build-up.Type: ApplicationFiled: October 26, 2011Publication date: May 2, 2013Applicant: FLUOR TECHNOLOGIES CORPORATIONInventors: Tom HAINES, Michael E. McGEE
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Patent number: 8425225Abstract: Method of reducing the formation of folds on metal strips (1) exposed to rapid heating in continuous heat-treatment lines, in which lines said strips are caused to pass through heating sections (2) comprising successive and separate heating means (5; 5a; 5b; 5c; 5d), wherein the average slope of the increase in temperature of the strip between the inlet and the outlet of a heating means decreases from one heating means to the following heating means.Type: GrantFiled: April 27, 2007Date of Patent: April 23, 2013Assignee: Fives SteinInventors: Catherine Pasquinet, Frédéric Marmonier
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Publication number: 20130017503Abstract: A semiconductor substrate processing apparatus (1), comprising a substrate support assembly (30), including a substrate support (32) defining an outer support surface (34) for supporting a substrate or substrate carrier (24) thereon, and a heater (50) comprising a heat dissipating portion (54) that is disposed within the substrate support (32) and that extends underneath and substantially parallel to the support surface (34), said substrate support (32) being rotatably mounted around a rotation axis (L) that extends through said support surface (34), such that the support surface (34) is rotatable relative to the heat dissipating portion (54) of the heater (50).Type: ApplicationFiled: July 13, 2011Publication date: January 17, 2013Inventors: Chris G.M. De Ridder, Klaas P. Boonstra, Theodorus G.M. Oosterlaken, Barend J. T. Ravenhorst
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Patent number: 8317512Abstract: The invention relates to a method for operating a firing furnace, in particular for the dental sector, in which the temperature is measured and, based on the measured temperature, a temperature control is performed. If appropriate, the temperature integral, recorded at discrete points, is determined over the course of time and in particular stored, and is used, if appropriate in addition to the temperature, for controlling the firing furnace.Type: GrantFiled: October 20, 2007Date of Patent: November 27, 2012Assignee: Ivoclar Vivadent AGInventor: Rudolf Jussel
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Publication number: 20120295105Abstract: A surface protective film includes a base layer having polyolefin as a main component and an adhesion layer. The surface protective film and a base film for the surface protective film are thermally treated at a temperature from 40 degrees C. to 100 degrees C. for 1 second to 120 seconds and a size change ratio at which each of the surface protective film and the base film changes in size after being heated at 90 degrees C. for one hour falls within ±0.50% in each of MD (a machine direction) and TD (a traverse direction). Generation of curling is prevented and a surface of a target member is protected without damaging properties or performance of the target member.Type: ApplicationFiled: December 24, 2010Publication date: November 22, 2012Applicant: IDEMITSU UNITECH CO., LTD.Inventors: Yoichiro Kimura, Tomoyuki Kitajima
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Patent number: 8291558Abstract: A method for manufacturing a piezoelectric/electrostrictive element includes a step of subjecting the piezoelectric/electrostrictive film to a heat treatment and a polarization treatment after the film is allowed to stand until the value of an electric constant has converged after the heat treatment. The piezoelectric/electrostrictive element manufactured in this method has small stress remaining in the piezoelectric/electrostrictive film, and predetermined performance regarding, for example, a displacement amount, a displacement-generating force, and an electric power efficiency (consumed electric power) as a piezoelectric/electrostrictive element (piezoelectric/electrostrictive film) is never spoiled.Type: GrantFiled: December 21, 2007Date of Patent: October 23, 2012Assignee: NGK Insulators, Ltd.Inventors: Takao Ohnishi, Takashi Wada, Tomohiro Yamada, Makoto Tani
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Publication number: 20120264072Abstract: An apparatus for performing reactive thermal treatment of thin film photovoltaic devices includes a furnace having a tubular body surrounded by heaters and cooling devices. The apparatus includes cooled doors at ends of the furnace separated from a central portion of the furnace by baffles. The cooled doors facilitate increased convection within the furnace and improve temperature uniformity.Type: ApplicationFiled: January 18, 2012Publication date: October 18, 2012Applicant: Stion CorporationInventor: Ashish Tandon
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Publication number: 20120214113Abstract: Pyrolysis methods and apparatuses that allow effective heat removal, for example when necessary to achieve a desired throughput or process a desired type of biomass, are disclosed. According to representative methods, the use of a quench medium (e.g., water), either as a primary or a secondary type of heat removal, allows greater control of process temperatures, particularly in the reheater where char, as a solid byproduct of pyrolysis, is combusted. Quench medium may be distributed to one or more locations within the reheater vessel, such as above and/or within a dense phase bed of fluidized particles of a solid heat carrier (e.g., sand) to better control heat removal.Type: ApplicationFiled: February 22, 2011Publication date: August 23, 2012Applicant: UOP LLCInventors: Sathit KULPRATHIPANJA, Paolo PALMAS, Daniel N. MYERS
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Patent number: 8227729Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less.Type: GrantFiled: September 21, 2010Date of Patent: July 24, 2012Assignee: Applied Materials, Inc.Inventors: Khurshed Sorabji, Alexander N. Lerner
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Patent number: 8211387Abstract: A combustor for oxidizing a combustion fuel and pre-heating one or more reactants for fuel reforming. The combustor includes an elongated housing having an inlet for receiving a combustion fuel and an outlet for exhausting combustion products. The elongated housing further includes a cylindrical side wall, a bottom wall, and a top wall. Inert particles are disposed within the housing adjacent the inlet. A combustion catalyst bed is disposed within the housing above the inert particles that is a mixture of inert particles and combustion catalyst. The inert particles and the combustion catalyst preferably have a volumetric ratio of inert particles to catalyst between about 2:1 and about 4:1. The combustor has at least one heat exchanger within the combustion catalyst bed for heating a reformer reactant and generating steam. Preferably, the combustor includes at least two heat exchangers within the combustion catalyst bed, the heat exchanging elements have different surface areas.Type: GrantFiled: July 17, 2006Date of Patent: July 3, 2012Assignee: Texaco Inc.Inventors: Vijay Anant Deshpande, Curtis L. Krause, Paul Francis Martin, Kevin Hoa Nguyen, James F. Stevens, William Spencer Wheat
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Patent number: 8116992Abstract: The invention relates to a method of determining bed velocity and solids circulation rate in a standpipe experiencing a moving packed bed flow, such as the in the standpipe section of a circulating bed fluidized reactor The method utilizes in-situ measurement of differential pressure over known axial lengths of the standpipe in conjunction with in-situ gas velocity measurement for a novel application of Ergun equations allowing determination of standpipe void fraction and moving packed bed velocity. The method takes advantage of the moving packed bed property of constant void fraction in order to integrate measured parameters into simultaneous solution of Ergun-based equations and conservation of mass equations across multiple sections of the standpipe.Type: GrantFiled: April 27, 2009Date of Patent: February 14, 2012Assignee: The United States of America as represented by the United States Department of EnergyInventors: J. Christopher Ludlow, James L. Spenik
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Publication number: 20120003547Abstract: An electrode comprising a cast-film architecture wherein a silicon-based polymer precursor is cast on to a current collector directly from the liquid, and processed in-situ to create a high performance anode for lithium ion batteries. In this in-situ process the liquid polymer is cross-linked and pyrolyzed to create a cast-film-anode architecture. The cast-film architecture is distinctly different from the conventional powder-based ex-situ process whereby the polymer precursor is made into powders by a ex-situ process; with these powders being then combined with conducting agents and binders to create a paste which is screen printed on a current collector to produce electrode with a powder-anode architecture. The cast-film architecture obviates the need for conducting agents and binders, simplifying the production process for the anode, without a loss in performance. The energy capacity per unit volume of the anode material is two to ten times greater for the cast architecture.Type: ApplicationFiled: June 30, 2011Publication date: January 5, 2012Inventor: Rishi Raj
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Publication number: 20110300418Abstract: A lithium secondary battery including lithium molybdate. The lithium molybdate is a composite including amorphous lithium molybdate as a minor component and crystalline lithium molybdate as a major component.Type: ApplicationFiled: April 4, 2011Publication date: December 8, 2011Inventors: Young-Ki Kim, Young-Hun Lee, Ick-Kyu Choi, Yong-Chul Park, Yoon-Chang Kim, Hyun-Deok Lee, Yong-Chan You
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Publication number: 20110256468Abstract: The invention provides an electrode catalyst material in which a resistance loss is reduced by enhancing an electric conductivity as a whole of an electrode catalyst as well as suppressing a corrosion and a disappearance by a catalyst metal in a conductive catalyst support so as to prevent a dropout and an aggregation of a catalyst metal particle, and a method of manufacturing the same. The electrode catalyst material in accordance with the present invention is an electrode catalyst material for a fuel cell having a catalyst metal particle and a carbon support supporting the catalyst metal particle, in which a carbon support protection layer including a metal element is formed in a coating manner on a surface of the carbon support, a silicone is included at 20 atomic % or more in the metal element contained in the carbon support protection layer, and the silicone exists in a state of an oxide and a carbide.Type: ApplicationFiled: March 30, 2011Publication date: October 20, 2011Inventors: Shuichi SUZUKI, Jun Kawaji, Yoshiyuki Takamori, Makoto Morishima
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Publication number: 20110244330Abstract: An electrode for an electrochemical cell including a polymer substrate, a conductive material in contact with the polymer substrate, a conductive ink in contact with the conductive material, and an active electrode material in contact with the conductive ink. The conductive ink is configured to enhance the adhesion between the conductive material and the active electrode material.Type: ApplicationFiled: April 13, 2011Publication date: October 6, 2011Inventors: Jeffrey L. Swoyer, Thomas J. Dougherty
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Publication number: 20110195343Abstract: A solid oxide fuel cell (SOFC) or SOFC sub-component comprising a YSZ solid oxide electrolyte layer (10), a LSCF cathode layer (14) and a mixed phase layer (18) comprising at least zirconia and ceria between the electrolyte layer and the cathode layer, with the cathode layer in direct contact with the mixed phase layer, that is with no ceria, other than in the mixed phase layer, between the cathode layer and the electrolyte layer. One method of forming the SOFC or sub-component comprises applying a layer of ceria on the electrolyte layer (10), heating the electrolyte and ceria layers to form the mixed phase layer (18), and removing excess ceria from the surface of the mixed phase layer before applying the cathode layer (14).Type: ApplicationFiled: October 9, 2009Publication date: August 11, 2011Applicant: CERAMIC FUEL CELLS LIMITEDInventors: Merrill Ruth Watts, Sudath Dharma Kumara Amarasinghe, Jonathan Gerald Love
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Publication number: 20110189577Abstract: Disclosed is a bipolar electrode/separator assembly including a bipolar electrode-adhesive film assembly including a bipolar electrode holding active materials, having different polarities, on central portions of top and bottom surfaces of a collector, respectively, and adhesive films on both top and bottom surfaces of the collector with respect to at least two of four edge surfaces of the collector on which electrode layers are not coated in the bipolar electrode, and a separator stacked on one or both top and bottom surfaces of the bipolar electrode-adhesive film assembly, wherein the collector and the separator are directly bonded by the adhesive film to thereby seal the bipolar electrode. A bipolar battery including the bipolar electrode/separator assembly and methods of manufacturing the same are also disclosed. A battery having desired capacity and voltage is provided by electrically connecting such bipolar electrode/separator assemblies either in series or in parallel according to usage.Type: ApplicationFiled: March 21, 2011Publication date: August 4, 2011Applicant: LG CHEM, LTD.Inventors: Geun Chang CHUNG, Bong Kook YOUN
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Publication number: 20110177430Abstract: A titanium material for a solid polymer fuel cell separator having a low contact resistance and a method of production of the same, the titanium material having at its surface a surface layer structure in which particles of a Ti compound containing either C or N are dispersed, the particles of Ti compound being covered by titanium oxide and/or metal Ti, characterized in that, when analyzed from the surface by XPS, a Ti2p spectrum of TiO2 is detected, further, at a Ti2p spectral energy range of TiO and/or a Ti2p spectral energy range of metal Ti, a Ti maximum detection peak height is at least 3 times the standard deviations of the background at the respective spectral energy ranges, and at a C1s spectral energy range and N1s spectral energy range, a maximum detection peak height is less than 3 times the standard deviations of the background at the respective spectral energy ranges of C1s and N1s, are provided.Type: ApplicationFiled: July 30, 2009Publication date: July 21, 2011Inventors: Kazuhiro Takahashi, Kiyonori Tokuno, Hiroshi Kihira, Koki Tanaka, Michio Kaneko
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Publication number: 20110053049Abstract: The invention provides processes for producing fuel cell catalysts that are not corroded in acidic electrolytes or at high potential and have excellent durability and high oxygen reducing ability. The process for producing fuel cell catalysts includes a step (I) of heating a carbonitride of a transition metal in an inert gas containing oxygen, and a step (II) of heating the product from the step (I) in an inert gas that does not substantially contain oxygen.Type: ApplicationFiled: March 23, 2009Publication date: March 3, 2011Applicant: SHOWA DENKO K.K.Inventors: Takuya Imai, Ryuji Monden, Toshikazu Shishikura
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Publication number: 20110046668Abstract: Provided herein are sutures to be used in a procedure applied to tissue, and methods for forming such sutures. A suture can include an elongated suture body and a plurality of heat-contact mediated retainers extending from and along the elongated suture body. The heat-contact mediated retainers can be formed by temporarily contacting the elongated suture body with one or more heated element.Type: ApplicationFiled: December 19, 2008Publication date: February 24, 2011Applicant: ANGIOTECH PHARMACEUTICALS, INC.Inventors: Alexei Goraltchouk, Lev Drubetsky, Gerald F. Cummings, Robert A. Herrmann, Alexander Naimagon
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Publication number: 20110008740Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less.Type: ApplicationFiled: September 21, 2010Publication date: January 13, 2011Inventors: Khurshed Sorabji, Alexander N. Lerner
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Publication number: 20100266775Abstract: A process for producing a fume free connector pipe is disclosed. The connector pipe is placed in a curing oven at a start temperature, the oven having a convective air CFM and an intake/exhaust air CFM. The oven temperature is increased over an increase time period to a hold temperature and the connector pipe is heated at the hold temperature for a hold time period then removed from the curing oven after a total amount of time, the total amount of time being the increase time period plus the hold time period.Type: ApplicationFiled: March 18, 2010Publication date: October 21, 2010Applicant: OLYMPIA CHIMNEY SUPPLYInventor: Steven Penatzer
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Publication number: 20100233840Abstract: Devices, solar cell structures, and methods of fabrication thereof, are disclosed. Briefly described, one exemplary embodiment of the device, among others, includes: a co-fired p-type silicon substrate, wherein the bulk lifetime is about 20 to 125 ?s; an n+ layer formed on the top-side of the p-silicon substrate; a silicon nitride anti-reflective (AR) layer positioned on the top-side of the n+ layer; a plurality of Ag contacts positioned on portions of the silicon nitride AR layer, wherein the Ag contacts are in electronic communication with the n+-type emitter layer; an uniform Al back-surface field (BSF or p+) layer positioned on the back-side of the p-silicon substrate on the opposite side of the p-type silicon substrate as the n+ layer; and an Al contact layer positioned on the back-side of the Al BSF layer. The device has a fill factor (FF) of about 0.75 to 0.85, an open circuit voltage (VOC) of about 600 to 650 mV, and a short circuit current (JSC) of about 28 to 36 mA/cm2.Type: ApplicationFiled: April 12, 2010Publication date: September 16, 2010Inventors: Ajeet Rohatgi, Ji-Weon Jeong, Kenta Nakayashiki, Vijay Yelundur, Dong Seop Kim, Mohamed Hilali
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Publication number: 20100130352Abstract: The present disclosure relates to methods of making shaped bodies comprising providing a substantially uniform temperature and gas flow throughout the shaped body as a function of reaction time. The disclosure further relates to methods of making shaped bodies substantially uniformly oxidized. The methods comprise setting at least one shaped body and performing at least one firing of the at least one shaped body. The present disclosure further relates to shaped bodies made according to the methods disclosed.Type: ApplicationFiled: February 6, 2009Publication date: May 27, 2010Inventors: Leonard Charles Dabich, II, James Gerard Fagan, Kishor Purushottam Gadkaree, Millicent Odei Owusu, Mallanagouda Dyamanagouda Patil
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Publication number: 20090280449Abstract: A furnace for heat treating components, especially relatively long components such as main shafts of gas turbine engines, comprises means for mounting a number of components vertically and conveying them repeatedly around a circular path surrounding one or more heating elements, while simultaneously rotating the components about their vertical axes. This allows uniform heat treatment of the components, even when long treatment times are needed. Loading and unloading chambers adjacent to the main chamber permit automated loading and unloading of components without disturbing the environment within the main chamber.Type: ApplicationFiled: May 1, 2009Publication date: November 12, 2009Applicant: ROLLS-ROYCE PLCInventors: Christopher Dungey, Kevin D. Bass
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Publication number: 20090191499Abstract: Methods and apparatuses for heat treatment of semiconductor wafers are disclosed herein. A method of heating a semiconductor wafer in accordance with one embodiment includes heating the wafer in a loading enclosure of a heat treatment system above an ambient temperature external to the loading enclosure. The method also includes moving the heated wafer from the loading enclosure into a processing enclosure of the heat treatment system. In particular embodiments, the method can further include heating a flow of purge gas above the ambient temperature and introducing the flow of heated purge gas into the loading enclosure while the wafer is in the loading enclosure. In still further embodiments, the method can include heating a flow of process gas to a processing temperature and introducing the heated flow of process gas into the processing enclosure while the wafer is in the processing enclosure.Type: ApplicationFiled: January 25, 2008Publication date: July 30, 2009Applicant: Micron Technology, Inc.Inventors: Shyam Surthi, Scott E. Moore