Abstract: An apparatus for selectively heating/cooling one or more substrates and establishing an approximately uniform temperature in the one or more substrates during a heating or cooling event is described. In one embodiment, the apparatus comprises a rotatable hot/cold plate onto which the one or more substrates are placed and a heating/cooling element disposed in close proximity to the rotatable hot/cold plate for selectively elevating/lowering the temperature of the one or more substrates.

Abstract: An anneal module for annealing semiconductor material wafers and similar substrates reduces particle contamination and oxygen ingress while providing uniform heating including for 500° C. processes. The anneal module may include a process chamber formed in a metal body having internal cooling lines. A hot plate has a pedestal supported on a thermal choke on the body. A gas distributor in the lid over the hot plate flows gas uniformly over the wafer. A transfer mechanism moves a hoop to shift the wafer between the hot plate and a cold plate.

Abstract: The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.

Abstract: An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed.

Abstract: A water transfer apparatus and a wafer transfer method are provided. The wafer transfer apparatus is provided with a heating component and a cooling component, the heating component heats the wafer carrying component to a temperature the same as the wafer when it is just unloaded from the rapid thermal anneal tool, and the cooling component cools the wafer carrying component along with the wafer to room temperature, thereby avoiding the large temperature difference between the wafer and the wafer transfer apparatus, preventing the high thermal stress induced inside the wafer during wafer transfer, avoiding wafer breakage, and ensuring the completeness of the wafer.

Abstract: Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.

Abstract: A substrate heat treatment apparatus includes a heat-treating plate having a flat upper surface, support devices formed of a heat-resistant resin for contacting and supporting a substrate, a seal device disposed annularly for rendering gastight a space formed between the substrate and heat-treating plate, and exhaust bores for exhausting gas from the space. The support devices are formed of resin, and the upper surface of the heat-treating plate is made flat, whereby a reduced difference in the rate of heat transfer occurs between contact parts and non-contact parts on the surface of the substrate. Consequently, the substrate is heat-treated effectively while suppressing variations in heat history over the surface of the substrate.

Abstract: An apparatus for performing reactive thermal treatment of thin film photovoltaic devices includes a furnace having a tubular body surrounded by heaters and cooling devices. The apparatus includes cooled doors at ends of the furnace separated from a central portion of the furnace by baffles. The cooled doors facilitate increased convection within the furnace and improve temperature uniformity.

Abstract: An object of the present invention is to perform temperature setting of a heating plate so that a wafer is uniformly heated in an actual heat processing time. The temperature of a wafer is measured during a heat processing period from immediately after a temperature measuring wafer is mounted on the heating plate to the time when the actual heat processing time elapses. Whether the uniformity in temperature within the wafer is allowable or not is determined from the temperature of the wafer in the heat processing period, and if the determination result is negative, a correction value for a temperature setting parameter of the heating plate is calculated using a correction value calculation model from the measurement result, and the temperature setting parameter is changed.

Abstract: In a heat treatment device including a heating chamber having a heating plate heating a semiconductor wafer, a cooling plate cooling the wafer heated by the heating chamber, and a transporting device transporting the wafer into and from the heating chamber, the cooling plate is provided with a coolant passage, a plurality of projections carrying the wafer with a space between the wafer and the surface of the cooling plate, and suction holes neighboring to the respective projections and connected to a suction device.

Abstract: Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.

Abstract: In order to provide an automatically operating cooling air regulating device for a grate cooler for cooling hot bulk material such as cement clinker, for example, which can be constructed easily and can be used without problems both for non-moving and also in particular for moving cooling grate regions or moving cooling grate systems, a regulating device with a regulator housing which is arranged below the cooling grate, performs its movements with it and is flowed through by the cooling air supplied is proposed according to the invention, an inner body which can be moved translatorily by the cooling air flow being guided displaceably in the regulator housing and the free flow cross section of the regulator housing remaining for the cooling air being reduced automatically with increasing height inside the regulator housing of the inner body against which the cooling air flows, and vice versa.

Abstract: A method for forming polysilicon material for photovoltaic cells. A first silicon material characterized by a first purity level is provided. The first silicon material is subjected to a thermal process to transform the first silicon material to a molten state confined in a first spatial volume. The molten first silicon material is subjected to a directional cooling process provided in a second spatial volume for a predetermined period, removing thermal energy from a first region. A polycrystalline silicon material characterized by a second purity level and an average grain size greater than about 0.1 mm is formed from the molten first silicon material in a vicinity of the first region. One or more silicon wafers is formed from the polycrystalline silicon material. A polysilicon film material characterized by a grain size greater than about 0.1 mm is deposited overlying each of the silicon wafers.

Abstract: The present invention is a thermal processing method including: a step of conducting a predetermined thermal process in a low temperature zone to a plurality of objects to be processed held in a tier-like manner by a heating unit, in a processing container that is made of metal and has the heating unit therein, and a step of introducing a cooling gas into respective areas in the processing container divided in a height direction of the objects to be processed.

Abstract: A change-over apparatus for cooling a gas passage is provided with a cooling chamber and a gas cooling and circulating system. The apparatus is further provided with a stationary partition plate and a slidable shield plate. The stationary partition plate has a suction opening and a discharge opening which are independently communicated respectively with a suction port and a discharge port, and the slidable shield plate has a shield part for partially shielding the suction opening and the discharge opening, whereby it is possible to alternately change over the direction of the gas passing through the cooling chamber.

Abstract: The present invention provides a heat treating process chamber having a housing with a flow passage in communication with a vestibule assembly. The vestibule assembly includes an outer ring with a first groove and an inner ring with a second groove. The first groove is formed in an axially inwardly facing surface of the outer ring. The first groove has a portion open in a radially outer direction and an axially inner direction. The second groove opens in an axially inner direction and is formed in an axially outwardly facing surface of the inner ring. The first and second grooves form a passageway when they are in an axially superimposed relationship. The first groove forms a radially outwardly open end and the second groove forms an axially inwardly facing end of the passageway. The passageway communicates with the flow passage thereby allowing passage of a temperature adjusting medium.

Abstract: An apparatus for controlling the substrate temperature of a substrate during processing of the substrate at a process energy. A chuck temperature input receives temperature measurements from temperature sensors at a substrate chuck, and a temperature set point input receives temperature set points. The temperature set points define a range of temperatures within which the apparatus maintains the substrate temperature. A chuck temperature controller output sends control signals to a chuck temperature controller, which signals are operable to selectively increase and decrease the chuck temperature. A process energy output sends control signals that are operable to selectively increase and decrease the process energy during the processing of the substrate. A controller compares the temperature measurements received from the temperature sensors at the substrate chuck through the chuck temperature input to the temperature set points received through the temperature set point input.

Abstract: A gas-cooled single-chamber type heat-treating furnace T in which cooling gas vents 9A and 9B opened and closed by doors 11A and 11B are provided on each of mutually opposed walls of an inner chamber 5 forming a processing room and cooling gas is circulated by opening the cooling gas vents 9A and 9B during gas cooling, wherein the cooling gas vents 9A and 9B of the inner chamber 5 are provided with lattice-shaped flow uniforming members 19 made of heat-resisting materials.

Abstract: A wafer heat-treatment system for processing a wafer by a high-temperature heat-treatment process and cooling the heat-treated wafer, comprises walls surrounding a closed space placing the wafer and having a hollow sealing a gas therein, and a pressure-regulating unit connecting to the hollow for regulating pressure in the hollow. Hence, the wafer heat-treatment system reduces power consumption by heating lamps by carrying out an evacuating process before the high-temperature heat-treatment process, and shortens the time necessary for the cool down process by a pressurizing process that is carried out after the completion of the high-temperature heat-treatment process.

Abstract: The present invention relates to a cooling system of a furnace, and more particularly, to a multi-cycle cooling system, located by the furnace door. The multi-cycle cooling system comprises the first gas cooling cycle, the second gas cooling cycle, the first liquid cooling cycle, the second liquid cooling cycle, the heat sinks and the heat insulation slot. When inside the process tube proceeds the high temperature process like depositing process, the first gas cooling cycle and the second gas cooling cycle are opened and the second liquid cooling cycle is closed at the same time. The second gas cooling cycle and the second liquid cooling cycle are assembled in the first flange, which is located on the process tube and contacts with the door. The first liquid cooling cycle in the second flange, which is located on the process tube and contacts with the first range, is always opened.

Abstract: An exhaust-heat utilization system is constructed which can achieve energy saving of semiconductor manufacturing facilities by reusing a warmed cooling-water, as a heating source, exhausted from semiconductor manufacturing apparatuses. Supply a low-temperature cooling-water having a temperature substantially equal to a room temperature to the semiconductor manufacturing apparatuses (2, 4, 6, 8, 10) through a low-temperature cooling-water line (12). Supply a medium-temperature cooling-water to the semiconductor manufacturing apparatus (8) through a medium-temperature cooling-water supply line (30), the medium-temperature cooling-water being exhausted from the semiconductor manufacturing apparatuses and having a temperature higher than the room temperature.

Abstract: A transfer chamber is provided. The transfer chamber has a temperature adjustment plate located in an upper portion of the chamber, a substrate handler located in a lower portion of the chamber, and a rotatable substrate carriage adapted so as to raise and lower between an elevation above a substrate supporting surface of the temperature adjustment plate, and an elevation below a substrate supporting blade of the substrate handler. The rotatable substrate carriage is adapted to transfer a substrate to and from the substrate supporting surfaces of the temperature adjustment plate, and of the substrate handler blade.

Abstract: In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

Abstract: In a heat processing apparatus for heating a wafer on a hot plate, a black plate having at least a rear face practically having a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate so that the temperature of the hot plate can be cooled rapidly.

Abstract: An apparatus is provided wherein a substrate is mechanically clamped to a heater block of a die bonder to hold down the heated substrate before and during the die bonding operation, thereby preventing warpage of the substrate. Embodiments include a clamp comprising a plurality of spring-loaded rollers which push down opposing outer edges of the substrate onto the heater block while the substrate is being heated and die bonded. The clamp minimizes warpage of the substrate by pushing the substrate flat onto the heater block, and allows the substrate to be moved into and away from the die bonding area.

Abstract: Target processing temperatures for a wafer and offset values are tabulated and stored in a temperature controller in advance. When a target processing temperature is changed, a hot plate temperature corresponding to the target processing temperature for the wafer is calculated based on the offset value in the table. Based on the calculated value, a heater controller controls a heater to change the hot plate temperature. Thereby, in a substrate heat processing apparatus for performing heat processing at different temperatures, an offset value corresponding to each temperature is automatically changed, whereby the substrate can be heated at an appropriate temperature.

Abstract: To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

Abstract: In a heat processing apparatus of a low-oxygen curing and cooling processing station, a plurality of blast ports are provided in a ring shutter along a thickness direction of a wafer and a heated inert gas is supplied into a heat processing chamber via the blast ports, so that both faces of the wafer can be heated while the inside of the heat processing chamber is exchanged for the inert gas. Accordingly, heat processing for the substrate can be efficiently performed in a short period of time.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: In a heat processing apparatus structured to heat a wafer on a hot plate, a black plate at least the rear face of which practically has a color with a JIS lightness of 0V to 4V is positioned above the hot plate. Moreover, cooling air is blown out from nozzles onto the rear face of the hot plate. Thus, the temperature of the hot plate can be cooled rapidly.

Abstract: A water-cooled baffle used in a furnace to control the clearance gap between the bottom of the baffle and the hearth of the furnace. The baffle includes a first pipe that extends at least to the walls of the furnace and serves as an arbor to allow rotation of the baffle. The first pipe has cooling water entry and water exit ports at opposing ends, and a plate and core buster segments disposed inside of it to establish annular regions for water flow. A second pipe is connected to the first pipe in a manner to allow the flow of water from the annular region connected to the water entry port of the first pipe, through the second pipe, and then through the annular region connected to the water exit port of the first pipe.

Abstract: In summary, the vertical rapid cooling furnace of this invention for treating semiconductor wafers with self contained gas chilling and recycling comprises a hot wall reaction tube positioned within a cylindrical array of heating coils. Space between the hot wall reaction tube and said array of heating coils provides a cooling gas passageway therebetween. The cooling gas passageway has an inlet and an outlet, a chilled gas inlet communicating with the inlet of the cooling gas passageway and a heated gas outlet communicating with the outlet of the cooling gas passageway. The furnace includes a heat exchanger having a hot gas inlet and a chilled gas outlet, the hot gas inlet thereof communicating with said heated gas outlet, and the chilled gas outlet communicating with said cooling gas passageway inlet. With this system, heated gas from the cooling gas passageway can be chilled to remove heat therefrom and returned to the cooling gas passageway to remove heat from the furnace.

Abstract: The invention relates to a cooler grate for a reciprocating grate cooler, with a plurality of grate plate supports extending transversely with respect to the cooler grate and constructed as hollow bodies, on which in each case grate plates are supported so that they are co-ordinated in transverse rows and sealed by means of screw connections, wherein the grate plates have cooling gas openings and cooling gas connecting channels are constructed between the grate plate support and the cooling gas openings.

Abstract: In a method for cooling a rotary kiln having a cylindrical outer jacket, cooling air is blown at high speed radially towards the jacket from an annular supply-air chamber surrounding the jacket and having a perforated inner wall which is located at a slight distance from the jacket and through which the cooling air is blown towards the jacket. The cooling air is sucked out from the space between the jacket and the inner wall to an annular exhaust-air chamber which is separate from and surrounds the supply-air chamber and communicates with said space. The cooling-air flow through the chambers is adjusted by fan devices connected thereto. A device for implementing this method has an annular supply-air chamber surrounding the jacket and having a perforated inner wall which is located at a slight distance from the jacket and designed for radially blowing cooling air towards the jacket.

Abstract: Apparatus is provided for decreasing temperature differentials within rectangular metal blooms being heated in a furnace. The apparatus includes elongated internally cooled members located above the blooms adjacent an exit end of the furnace. The longitudinal axes of the internally cooled members are parallel to each other and to the longitudinal axes of the blooms, the latter axes being aligned so as to extend transversely with respect to the direction of movement of the blooms from an entry to an exit end of the furnace.

Abstract: Quick-change cooling line which is located advantageously downstream of a finishing unit (11) and is suitable to cool round or ribbed wire rod having a section between 4 and 25 mm., the line consisting of a plurality of segments (110) each of which comprises cooling assemblies (15), assemblies (16) performing cleaning with water and possible drier assemblies (17), each organized plurality of segments being specially prepared (210-310-410-510) for a limited range of dimensions and cooperating with a rolling axis (14) when in the cooling position, whereby at least two specific sgements (210-310) having specialized ranges of different dimensions for the wire rod passing through are able to cooperate with the rolling axis (14) alternately.

Abstract: An automated curing oven system for use in the manufacturing of semiconductors. This system may easily be incorporated with other automated machinery used for various semiconductor processing steps because it employs the same device holding magazine used for many other steps. The device holding magazine serves as the oven chamber itself thereby eliminating many manual handling steps.

Abstract: A bucket cooled by circulating water and scrap preheating apparatus incorporating the bucket are disclosed. The bucket comprises a bucket-shaped container which contains scrap to be preheated and through which an exhaust gas from an electric furnace is passed to preheat the scrap contained therein, a cooling water passageway which surrounds the periphery of said container, and water supply and exhaust ports which are connected to said cooling water passageway, cooling water being supplied to and exhausted from the bucket during preheating of the scrap contained therein.

Abstract: An apparatus for positioning a thermogravimetric furnace includes a furnace mounting bracket which is rotatable about and linearly translatable along a single axis. In addition, simultaneous rotational and linearly movement of the furnace is excluded.

Abstract: A continuous cold rolling and annealing apparatus for a steel strip so that interruption of a cold rolling mill part does not directly cause a continuous annealing furnace part to be interrupted, in which apparatus at least one cold rolling mill is located upstream of the entrance of a continuous annealing furnace and an intermediate reel for supplying a spare steel strip coil to said continuous annealing furnace, is arranged between the cold rolling mill and the continuous annealing furnace.

Abstract: A device for gradient heating of a wire includes a vacuum chamber with a thermostatically regulated base and a means for producing a temperature gradient arranged thereinside. The means for producing a temperature gradient is designed in the form of a metallic cylinder with one end thereof having an electric heater and the other end being attached to the thermostatically regulated base of the vacuum chamber, serving as a cooler. The surface of the metallic cylinder is furnished with transverse grooves intended for locating therein a wire being heated and interconnected by a longitudinal groove intended for passing the wire from one transverse groove into the other.

Abstract: There is provided a vacuum oven with a gas cooling device with which the heat treated charge for cooling is blown on with a cooling medium from nozzles arranged around it in which the nozzles in the heating chamber are arranged parallel to the axis of the oven and are placed on gas inlet tubes rotatable around its axis.

Abstract: The present invention is an apparatus and method for cooling heat exchanger tubes at controlled conditions. The apparatus comprises a housing sealingly connected to each heat exchanger tube. There are water and air inlets to the housing. A means to generate mist is located within the housing and directed to spray a jet of mist from the housing into the heat exchanger tube. During operation, air is injected into each heat exchanger tube at controlled conditions. The air is followed by a water mist under controlled flow conditions into each tube. Carrier air accompanies the water mist. A controlled flow of water is injected into each heat exchanger tube after the water mist.