Abstract: A method of operating a superconductor in its superconductivity state at a temperature Tc(i) in the range of Tc* to Tc, where Tc* is greater than the superconductivity temperature Tc of the superconductor, includes cooling the superconductor to a temperature of Tc or less and applying energy to the superconductor after the superconductor has entered a superconducting state. The energy corresponds to the quantum energy h? in the range of a minimum energy less than E0 to less than E0, where E0 is the ground state of the two-dimensional excitation binding energy of the superconductor The superconductor is then cooled to the selected temperature Tc(i). The minimum energy is 8/9 of E0.

Abstract: Disclosed herein is a topologically protected ?/8-gate which becomes universal when combined with the gates available through quasi-particle braiding and planar quasi-particle interferometry. A twisted interferometer, and a planar ?/8-gate in CTS, implemented with the help of the twisted interferometer, are disclosed. Embodiments are described in the context of state X (CTS) supported by an ISH, although the concept of a twisted-interferometer is more general and has relevance to all anionic, i.e. quasiparticle systems.

Abstract: A method and apparatus for modulating light, wherein a light source provides light of a certain wavelength to be modulated by a layer of superconducting material which forms part of a specifically configured plate assembly. The superconducting layer is placed in the optical path of the light source. Further the superconducting layer is switched between a partially transparent non-superconducting state and a substantially non-transparent superconducting state by a modulation circuit. The resulting optical pulses transmitted through the superconducting layer are converted from the original wavelength to a lower wavelength by a frequency converting device.

Abstract: A method and apparatus for modulating light, wherein a light source provides light of a certain wavelength to be modulated by a layer of superconducting material which forms part of a specifically configured plate assembly. The superconducting layer is placed in the optical path of the light source. Further the superconducting layer is switched between a partially transparent non-superconducting state and a substantially non-transparent superconducting state by a modulation circuit. The resulting optical pulses transmitted through the superconducting layer are converted from the original wavelength to a lower wavelength by a frequency converting device.

Abstract: A method and apparatus for temperature activated protection of electronic components from interfering electromagnetic radiation comprising the step of shielding of a component with a thin film of superconducting material characterized by a critical temperature of at least 93.degree.K, and exposing the film to a temperature below the critical temperature. To allow transmissions to and from the component, the shield is converted to a window by heating the film to a temperature above the critical temperature.

Abstract: A method and apparatus for modulating light, wherein a light source provides light of a certain wavelength to be modulated by a layer of superconducting material which forms part of a specifically configured plate assembly. The superconducting layer is placed in the optical path of the light source. Further the superconducting layer is switched between a partially transparent non-superconducting state and a substantially non-transparent superconducting state by a modulation circuit. The resulting optical pulses transmitted through the superconducting layer are converted from the original wavelength to a lower wavelength by a frequency converting device.

Abstract: The substance has a composition of a general chemical formula ofBi.sub.2 -(Sr.sub.2 Ca.sub.1).sub.1-x (La.sub.2 Y.sub.1).sub.x -Cu.sub.y -O.sub.z,where 0.4.ltoreq.x.ltoreq.1, y=2 and z=9-10.5, wherein the substance is an insulator or a semiconductor in the dark, and has a photoconductivity Q(.lambda.,T) in conjugate with superconductivity of a superconductor of an adjacent component of the Bi-SrCa-LaY-Cu-O system at and below a critical temperature (T) of less than 105.degree.-115.degree. K. and below 65.degree.-85.degree. K. at photoexcitation in an optical wavelength range (.lambda.) of 420-670 nm. The present invention relates to a method for producing the same and a superconductive optoelectronic device by using the same. The present invention also relates to an organized integration of the element or device into an apparatus to further develop a new field of "Superconductive Optoelectronics.

Abstract: An optical data transmission system includes an optical data receiver having a plurality of optical detectors and an optical switch which directs successive pulses of a serial data stream to different detectors. The switch includes one or more superconductive mirrors responsive to current pulses to change from a superconducting, reflective state to a non-superconducting, non-reflective state for the duration of a current pulse. In this manner, high speed optical data is received by detectors incapable of operating at the high speed of available optical data links and transmitters. The mirror is oriented at an angle to the data stream such that an optical pulse is reflected to one detector when the mirror is in the superconducting, reflective state and is passed through the mirror to another detector when the mirror is temporarily in the non-superconducting, non-reflective state under the control of a current pulse.

Abstract: The disclosed superconductive optoelectronic device with the basic substance Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region. The source region and the drain region are made of a Bi-based superconductive material. The gate region is made of such the basic material Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3 ;M.sup.2+ (M=Ca,Sr,Cu) of superconductive-conjugate photoconductivity, which reveals photoconductivity at a temperature below the transition temperature of the above relevant Bi-based superconductive material. Also disclosed are superconductive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop effectively a new field of "Superconductive Optoelectronics".

Abstract: The present invention is a superconducting opto-electronic phase shifter which is achieved by illuminating a superconducting microstrip line, which is fabricated on a dielectric substrate, with an optical beam of a predetermined intensity and shape. Because the superconducting microstrip will exhibit a local surface resistance when and where illuminated, the microstrip line will be artificially narrowed thereby producing a phase shift. This occurs because as the width of a superconducting microstrip line narrows the velocity of the carder signal increases. Therefore, if the illumination of the superconducting microstrip line causes a local surface resistance, then the surface impedance of the microstrip line is increased causing the effective width of the microstrip line to decrease. Hence, the artificial decrease in the width of the microstrip will cause the phase of the carrier signal to shift.

Abstract: A reflector has a body of a ceramic oxide superconductive material whose surface is treated to be diffusively reflective and is coated with diamond-like carbon or magnesium fluoride.