Abstract: A superconductor device which includes a first wiring part and a second wiring part which together form a superconductive wiring. The first wiring part is arranged onto a substrate and is made of a superconductor material. The second wiring part is made of a non-oxide semiconductor material. The second wiring part is adjacent to the first wiring part and jointly forms a superconductive wiring with the first wiring part by becoming at least partly superconductive due to proximity effect with the first wiring part. The second wiring part has a smaller penetration length of magnetic field than that for the first wiring part. This structure enhances the propagation velocity of a signal within the superconductive wiring.

Abstract: A system for incorporating superconductor circuits and semiconductor circuits in multilayered structures. A carrier material is chosen that is a good thermal match with the preferred superconductor substrates. The preferred superconductor substrate materials are lanthanum aluminate, magnesium oxide and neodymium gallate. The substrate carrier material should provide adequate thermal match through the range of operating temperatures which are preferably from room temperature to 77K. The preferred carrier material is a low temperature cofired ceramic (LTCC) which allows for multilayered structures to be developed which incorporate the superconductor circuitry and the semiconductor elements. The LTCC is composed of crystalline quartz particles in a borosilicate glass matrix. The percentage of quartz may be adjusted to adjust the thermal expansion characteristics of the LTCC.

Abstract: The present invention provides a superconducting switch which has a substrate base and a control line patterned thereon. A buffer layer is deposited on top of these and then a superconducting material is deposited and then patterned wherein the superconducting material forms a strip having multiple intersections with the control line. At each intersection between the control line and the superconducting strip is formed a superconducting gate due to the double step edge junction. The control line underneath provides (1) a means for constructing step edge weak link junctions; (2) a means for heating the weak link junctions; and (3) generating an electromagnetic field near the weak link junctions. In combination, a very small magnetic field can be used to decrease the critical current to a very low level.

Abstract: Process for manufacturing a high interconnection density, fine-line, superconductive printed leadframes using thick-film screen-printing techniques, or other printing techniques. Generally, a superconductive leadframe pattern is printed on a backing substrate. Once the pattern is cured, the backing substrate, or portions thereof can be removed. The backing substrate can be a "fish paper" substrate treated with a release agent, or other substrate material which can be dissolved away, etched away, or otherwise removed. Portions of the backing substrate can be used to provide mechanical integrity for the leadframe. The leadframe fingers can be printed using a superconductive paste or a superconductive precursor paste which is subsequently treated to exhibit superconductivity.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors. The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: A microelectronic thin-film device having a thin superconducting layer in contact with a thin quasi-insulating conversion layer. The critical current of the superconducting layer is controlled by application of a voltage to the conversion layer by means of a gate electrode, causing the conversion layer to undergo an insulator-metal transition.

Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.

Abstract: A termination for a high-temperature superconductive thin-film microwave device formed on the obverse side of a substrate with the reverse side of the substrate having a ground plane. The termination can include a thin-film resistor being integral with an operative component, with the substrate being a preselected dielectric substrate. The resistor can have an epitaxially-formed layer of molybdenum metal of a first preselected thickness on the obverse side, and an epitaxially-formed layer of titanium metal of a second preselected thickness thereon. The termination includes a epitaxially-formed thin-film capacitor integral with the resistor. The capacitor can have a layer of titanium metal formed on a portion of the obverse side with a layer of gold metal formed thereon. The substrate can be lanthanum aluminate, and the high-temperature superconductive film can be a yttrium-barium-copper-oxide film. The ground plane can be made of a high-temperature superconductive film and annealed gold.

Abstract: A superconducting circuit having patterned superconducting wiring lines. Each wiring line consists of at least one portion (2') of the thin film (2) of an oxide superconductor deposited on a substrate (1). The portion (2') has a predetermined crystal orientation and the remaining portions (2") have a different crystal orientation or changed to non-superconductor. The superconducting circuit has a planar surface.In variations, two different wiring lines (21, 22) each having a different crystal orientation are produced at different portions of a thin film of oxide superconductor, so that superconducting current flow separately through two different portions in a common thin film.

Abstract: Circuit board devices are provided based on use of high temperature superconducting ceramic polymers comprising high temperature superconducting ceramic powders distributed in electrically insulative organic polymers which are thermosetting by reaction of a two-part liquid mixture or by catalytic or photoinitiation of a one-part liquid. The ceramic domains transmit their superconductivity across the insulating barriers of organic polymers enabling formation of superconductive lines and superconducting bonds to electronic devices to be adhered to circuit boards, and providing superconducting circuitry.

Abstract: Method and apparatus for interconnecting integrated circuits (ICs) are described. The invented lattice preferably is formed in a plural-layer structure whereby each required interconnect signal has one or more dedicated layers of a planar, thin-film conductor that is coextensive with the substrate. Thousands of such horizontal layers are vertically stacked in the structure, each being shielded by voltage or ground planes and each being insulated by layers of insulative dielectric material. A regular array of vertical pillars is provided in the substrate, each pillar effectively providing an inner conductor either electrically connected with a conductive layer or electrically insulated therefrom by an insulative region. The columns extend from the top of the substrate on which the ICs are mounted through to the bottom surface of the bottom layer.

Abstract: A cryogenic bypass current lead to bypass quenched magnets in a string of magnets in a superconducting super collider comprises a HTSC section interposed between a lower conductive body terminal and the conductive of the lead is described.

Abstract: Disclosed are methods of forming superconducting devices including a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: A flux transformer comprises a pickup coil 1, an input coil 2 and a pair of lines 3, 4. The line 4 contains a bridge part 4a intersecting the input coil 2. The pickup coil 1, input coil 2 and a pair of lines 3, 4 are formed of a first and a second oxide superconducting thin films 11, 13. Furthermore, the flux transformer comprises a non-superconducting thin film 12. The non-superconducting thin film 12 is disposed between the first and the second oxide superconducting thin films 11, 13 and is located in a domain wherein the line 4 intersects the input coil 2. A pattern of the first oxide superconducting thin film 11 corresponds to the pickup coil 1, the input coil 2 and the lines 3,4 except the bridge part 4a. The pattern of the second oxide superconducting thin film 13 corresponds to the input coil 2 except the domain where the non-superconducting thin film exits, the pickup coil 1 and the lines 3,4.

Abstract: A joint device structure for capacitive microwave coupling of a superconducting device arranged on a substrate with room temperature circuitry; including a superconducting wave guide of an oxide superconductor on said substrate from one side to the superconducting device launching microwave to the superconducting device, a pair of superconducting groundplanes of an oxide superconductor arranged at an end of the superconducting wave guide sandwiching the end of the superconducting wave guide with a little gap and a microwave probe-head connected to the room temperature circuitry arranged above the superconducting wave guide with a coupling gap having three probing pins corresponding to the superconducting wave guide and the superconducting groundplanes.

Abstract: Superconductized electronic devices, such as a Josephson junction device, or superconductized optical devices represented by a light emitting and receiving devices of semiconductor laser are available using semiconductor materials which normally have no superconducting characteristics. The devices can operate by controlling the behavior of a Cooper pair in an active region which is formed in the semiconductor in advance using the penetrating phenomenon of the Cooper pair caused in the semiconductor proximate to the superconductor.

Abstract: A biomagnetometer includes a magnetic field sensor unit having a magnetic field pickup coil. A vessel contains the sensor unit. The vessel includes a flexible contact face with the magnetic field sensor unit mounted in the interior of the vessel adjacent to the flexible contact face. Insulation at the flexible contact face of the vessel prevents excessive heat flow through the flexible contact face. Pickup units using this structure can be connected together into flexible or rigid arrays. In operation, the pickup coil is cooled to a temperature of less than its superconducting transition temperature. A detector measures the magnitude of magnetic fields sensed by the sensor unit.

Abstract: A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other.

Abstract: For manufacturing a superconducting device, a first c-axis orientated oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. An a-axis orientated oxide superconductor thin film is grown, using the gate electrode as a mask, so that second and third superconducting regions having a relatively thick thickness are formed at both sides of the gate electrode, electrically isolated from the gate electrode. The superconducting device thus formed can functions as a super-FET.

Abstract: A new class of high temperature superconductive oxides is disclosed. An exemplary member of the class has nominal composition Pb.sub.2 Sr.sub.2 Y.sub.0.5 Ca.sub.0.5 Cu.sub.3 O.sub.8 and has a transition temperature T.sub.c (onset) of about 79K.

Abstract: Disclosed herein is a superconducting field effect transistor (FET) which has at least an active region formed from a film of oxide normal conductor, a plurality of electrodes formed from a film of oxide superconductor, and a means to control the current which flows between the electrodes through the active region. Having a much greater electrode distance than the conventional superconducting device, it can be produced easily by lithography without resorting to special techniques.

Abstract: In the case of high-temperature superconductors (6) which are used as inductive current limiters, unless any special precautionary measure is taken, there is a risk that short-circuit currents can lead to local stress centers and hot spots, and to local destruction of the high-temperature superconductor. In order to avoid this, a hollow cylinder (SL) of the high-temperature superconductor (6) is coated with a 1 .mu.m thick conductive-silver layer (E1). A second 10 .mu.m thick metal layer of foil made of silver or aluminum can be deposited thereon. In order to reduce or to avoid tensile stresses in the ceramic of the hollow cylinder (SL) made of a high-temperature superconductor, and in order to reduce the electrical contact resistance of the metal layers, this hollow cylinder (SL) has a mechanical reinforcing element (7), made of an elastic steel wire, wound around it, at room temperature, under tensile stress.

Abstract: A composite lead is provided which electrically links and conducts a current between about 75-80K. and liquid helium temperature of about 4.5K. The composite lead may be employed singly or in multiples concurrently to provide conduction of electrical current from normal conductors and semi-conductors at room temperature to superconductors operating at 4.5K. In addition, a variety of organizationl arrangements and assemblies are provided by which the mechanical strength and electrical reliability of the composite lead is maintained.

Abstract: A superconductive device for helping shield magnetic field comprises at least two members; a layer containing superconductive oxide over each of the members; connecting component for connecting the members to form a substrate; and connecting element for connecting the layers containing superconductive oxide along a joint in which the members are connected.

Abstract: An electrical connection between an electric conductor and an oxide superconductor is effected without the intermediary of a thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere. This electrical connection is formed by removing the thin insulating layer that is formed by leaving the oxide superconductor in the atmosphere, and by electrically connecting the electric conductor and an exposed surface of the oxide superconductor.

Abstract: A superconducting interface circuit converting a signal sent from a normal conducting circuit into a small voltage swing signal suitable for a superconducting circuit includes a superconducting field effect device. The superconducting field effect device has a superconducting channel of an extremely thin oxide superconductor thin film, a superconducting source region and a superconducting drain region of an oxide superconductor thin film positioned at both ends of the superconducting channel, and a gate electrode on the superconducting channel through a gate insulator. The gate electrode of the super-FET is connected to a signal line which transmits a voltage signal from the normal conducting circuit.

Abstract: Superconducting device include a type having a structure of a superconductor--a normal-conductor (or a semiconductor)--a superconductor, and a type having a superconducting weak-link portion between superconductors.The superconductors constituting the superconducting device are made of an oxide of either of perovskite type and K.sub.2 NiF.sub.4 type crystalline structures, containing at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu, and Tb; Cu; and O. In addition, the c-axis of the crystal of the superconductor is substantially perpendicular to the direction of current flowing through this superconductor.

Abstract: An autogenous superconducting joint metallurgically bonding a pair of shaped superconducting pieces. Each of the pieces is formed by combining the metallic elements of a superconducting oxide in substantially the stoichiometric proportions needed to form the superconducting oxide, and then forming the combined metallic elements into a shaped piece. The microstructure of the joint is substantially the same as that of the portions of the pieces adjacent the joint.

Abstract: A method for manufacturing a high Tc superconducting circuit elements is disclosed, which comprises the steps of preparing a single crystal conductive substrate of Sr.sub.2 RuO.sub.4 by a floating zone melting process; epitaxially growing on the (001)-surface of the Sr.sub.2 RuO.sub.4 substrate a high Tc copper oxide-based superconducting film with a thickness of 1 to 1000 nm; depositing metal pads onto said superconducting film to form electrical contacts; and applying a metal pad to the surface of the substrate to form an electrical contact.

Abstract: A non-linear superconducting junction device comprising a layer of high transient temperature superconducting material which is superconducting at an operating temperature, a layer of metal in contact with the layer of high temperature superconducting material and which remains non-superconducting at the operating temperature, and a metal material which is superconducting at the operating temperature and which forms distributed Sharvin point contacts with the metal layer.