Producing Halogen [i.e., Fluorine (fl), Chlorine (cl), Bromine (br), Or Astatine (at)], Containing Superconductor Patents (Class 505/461)
  • Patent number: 8703651
    Abstract: A composition of matter for a layered ionic superconductor comprising a plurality of layers of ions and electronic interaction charges, and having a substantially improved superconducting transition temperature is described. An aspect of the composition includes a first layer comprising a plurality of alkali ions and cesium ions in particular that is adjacent to a second layer comprising a plurality of halogen ions and fluorine ions in particular. The first and second layers contain electronic interaction charges and are separated by a predetermined perpendicular distance. Crystalline structure, ionic properties, superconducting transition temperature, and superfluid density for several embodiments including companion ionic species are described and illustrated. Methods for preparing the several embodiments are provided.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: April 22, 2014
    Inventors: Dale Richard Harshman, Anthony Thomas Fiory
  • Patent number: 8653005
    Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.
    Type: Grant
    Filed: June 8, 2012
    Date of Patent: February 18, 2014
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Harold Wiesmann, Vyacheslav Solovyov
  • Patent number: 8288321
    Abstract: Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: October 16, 2012
    Assignee: Japan Science and Technology Agency
    Inventors: Hideo Hosono, Hiroshi Yanagi, Toshio Kamiya, Satoru Matsuishi, Sungwng Kim, Seok Gyu Yoon, Hidenori Hiramatsu, Masahiro Hirano, Takatoshi Nomura, Yoichi Kamihara
  • Patent number: 8216978
    Abstract: This invention provides a method of making a fluorinated precursor of a superconducting ceramic. The method comprises providing a solution comprising a rare earth salt, an alkaline earth metal salt and a copper salt; spraying the solution onto a substrate to provide a film-covered substrate; and heating the film-covered substrate in an atmosphere containing fluorinated gas to provide the fluorinated precursor.
    Type: Grant
    Filed: February 26, 2008
    Date of Patent: July 10, 2012
    Assignee: Brookhaven Science Associates, LLC
    Inventors: Harold Wiesmann, Vyacheslav Solovyov
  • Patent number: 8142881
    Abstract: A superconductor for mitigating the effects of local current disruptions in a superconducting filament. The superconductor comprises superconducting filaments covered by a medium in electrical communication with the filaments. The covering medium has anisotropic conductivity, the conductivity in a direction substantially aligned with the filaments being selected to stabilize the superconductor near the critical temperature, and the conductivity of the covering in a direction substantially perpendicular to the filaments being selected to permit controlled current sharing between the filaments, especially when a filament is compromised, while simultaneously limiting alternating current (ac) losses. In various embodiments, the covering comprises a wire mesh having longitudinal wires made of a first material having a first conductivity, and transverse wires made of a second material having a second conductivity, different from the first conductivity.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: March 27, 2012
    Assignee: American Superconductor Corporation
    Inventor: Cornelis Leo Hans Thieme
  • Patent number: 8124568
    Abstract: An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a <001> direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: February 28, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Hayashi, Takeshi Araki
  • Patent number: 7763343
    Abstract: A superconductor for mitigating the effects of local current disruptions in a superconducting filament. The superconductor comprises superconducting filaments covered by a medium in electrical communication with the filaments. The covering medium has anisotropic conductivity, the conductivity in a direction substantially aligned with the filaments being selected to stabilize the superconductor near the critical temperature, and the conductivity of the covering in a direction substantially perpendicular to the filaments being selected to permit controlled current sharing between the filaments, especially when a filament is compromised, while simultaneously limiting alternating current (ac) losses. In various embodiments, the covering comprises a wire mesh having longitudinal wires made of a first material having a first conductivity, and transverse wires made of a second material having a second conductivity, different from the first conductivity.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: July 27, 2010
    Assignee: American Superconductor Corporation
    Inventor: Cornelis Leo Hans Thieme
  • Patent number: 7732376
    Abstract: The present invention relates to a method of preparing an oxide superconducting film, the method includes reacting a metal acetate containing metal M selected from the group consisting of lanthanum, neodymium and samarium with fluorocarboxylic acid having not less than three carbon atoms, reacting barium acetate with fluorocarboxylic acid having two carbon atoms, reacting copper acetate with fluorocarboxylic acid having not less than two carbon atoms, respectively, followed by refining reaction products, dissolving the reaction products in methanol such that a molar ratio of the metal M, barium and copper is 1:2:3 to prepare a coating solution, and coating a substrate with the coating solution to form a gel film, followed by calcining and firing the gel film to prepare an oxide superconducting film.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: June 8, 2010
    Assignees: Kabushiki Kaisha Toshiba, International Superconductivity Technology Center
    Inventors: Takeshi Araki, Koichi Nakao, Izumi Hirabayashi
  • Patent number: 7615515
    Abstract: An oxide superconductor includes a main component represented by the following formula: LnBa2Cu3O7-x, where Ln comprises two or more types of elements selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Y, and a content of each element is 10 to 90 mol %, and fluorine at a molar ratio of 10?2 to 10?6 with respect to copper.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: November 10, 2009
    Assignees: Kabushiki Kaisha Toshiba, International Superconductivity Technology Center
    Inventors: Takeshi Araki, Koichi Nakao, Izumi Hirabayashi
  • Publication number: 20080188373
    Abstract: Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.
    Type: Application
    Filed: February 5, 2008
    Publication date: August 7, 2008
    Applicant: American Superconductor Corporation
    Inventors: Martin W. Rupich, Thomas A. Kodenkandath
  • Publication number: 20020132739
    Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.
    Type: Application
    Filed: March 15, 2002
    Publication date: September 19, 2002
    Inventors: Won nam Kang, Sung-Ik Lee, Eun-Mi Choi, Hyeong-Jin Kim
  • Patent number: 6426320
    Abstract: A method for fabricating superconductor articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous features, including low pore density and/or inclusions with small average particle size diameter.
    Type: Grant
    Filed: December 29, 1999
    Date of Patent: July 30, 2002
    Assignee: American Superconductors Corporation
    Inventors: Leslie G. Fritzemeier, David M. Buczek
  • Patent number: 6027564
    Abstract: A method for fabricating composite articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous properties, such as low pore density and/or inclusions with small average particle size diameter.
    Type: Grant
    Filed: January 15, 1998
    Date of Patent: February 22, 2000
    Assignee: American Superconductor Corporation
    Inventors: Leslie G. Fritzemeier, David M. Buczek
  • Patent number: 6022832
    Abstract: A method for fabricating superconductor articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous features, including low pore density and/or inclusions with small average particle size diameter.
    Type: Grant
    Filed: January 15, 1998
    Date of Patent: February 8, 2000
    Assignee: American Superconductor Corporation
    Inventors: Leslie G. Fritzemeier, David M. Buczek
  • Patent number: 5607658
    Abstract: A metal oxide manufacturing method includes the steps of preparing the metal oxide expressed by a general formula of AXBYCZDn, (where A represents at least one element selected from a group consisting of a rare earth element, yttrium and an element obtained either by substituting part of rare earth elements with alkali metals or alkali earth metals or by substituting part of yttrium with alkali metals or alkali earth metals, B represents an alkali earth metal, C represents copper or an element obtained by substituting part of copper with transition metals, and D represents oxygen, and where when X=1, Y=2 to 4, Z=2.7 to 6 and n=6 to 13), reducing the metal oxide expressed by the general formula, and halogenating the reduced metal oxide. Part of oxygen (D) of the metal oxide expressed by the general formula is substituted with the halogen elements.
    Type: Grant
    Filed: September 5, 1995
    Date of Patent: March 4, 1997
    Assignee: Canon Kabushiki Kaisha
    Inventors: Norio Kaneko, Tamaki Kobayashi
  • Patent number: 5561102
    Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.
    Type: Grant
    Filed: December 14, 1994
    Date of Patent: October 1, 1996
    Assignee: The Research Foundation of State University of New York at Buffalo
    Inventors: Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
  • Patent number: 5426092
    Abstract: A thin film, high T.sub.c fluorinated, superconducting having a lattice structure differing from the lattice structure of the material substrate, such as sapphire or stainless steel, upon which it is grown. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities.
    Type: Grant
    Filed: June 25, 1992
    Date of Patent: June 20, 1995
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, Rosa Young
  • Patent number: 5364835
    Abstract: A method of producing an oxide superconducting material comprises the steps of adding a halogen element to an oxide superconducting material by ion injection and thermal diffusion, forming a film either on the oxide material before or after the adding step, and applying heat treatment after the forming step to improve the electric property in the near-surface portion.
    Type: Grant
    Filed: February 16, 1993
    Date of Patent: November 15, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki