Abstract: A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications: field-effect transistors with low gate control voltage. FIG. 3.

Abstract: A method for forming a superconducting circuit is disclosed, comprising the steps of forming a mask pattern on a superconducting layer, forming a covering layer, containing a modifying element for superconductor, on the resultant structure, diffusing the modifying element for a superconductor, which is contained in the covering layer, into the superconducting layer to modify a corresponding location to a nonsuperconducting layer. A method for forming a multi-layer superconducting circuit is also disclosed, comprising sequentially repeating the same steps as set forth above over a substrate.

Abstract: A method for forming an insulating layer in an oxide high-temperature superconductor is described. The oxide high-temperature superconductor is exposed to radiation, whereby an interface showing superconducting characteristics and/or a weak link that is present at an interface in the said oxide high-temperature superconductor is transformed to a thin insulating layer.

Abstract: A superconducting pattern formed from a superconducting ceramic film is illustrated. The pattern is made in the form of a coil which is embedded in an insulating ceramic film. The insulating film is made of a ceramic material whose thermal expansion coefficient is approximately equal to that of the coil.

Abstract: A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

Abstract: A method for producing an oxide superconducting connecting line includes initially coating a line with at least one layer of a crystalline or amorphous metal alloy forming a superconductive oxide. The line is subsequently heated to a temperature below the melting temperature of the oxide. A gas containing oxygen is simultaneously brought into contact with the accessible surface forming an oxide film which is superconductive upon cooling. When the oxide film is damaged at a certain location, the still-undamaged layer is exposed to the oxygen-containing gas and the line is heated at the damaged location. A superconducting film is again formed. A combination superconducting connecting line and an apparatus for producing the superconducting connecting line is also disclosed.

Abstract: A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.

Abstract: A process for preparing high-Tc superconducting integrated circuits by using a method in which a thin surface layer of non-superconducting tetragonal YBa.sub.2 Cu.sub.3 Oy wafer is selectively transformed into a superconducting orthorhombic phase by oxygen-diffusion. The superconducting orthorhombic islands are surrounded with non-superconducting tetragonal phases and these are electrically isolated from each other. The process results in the formation of superconducting integrated circuits which are inexpensive and are high in quality.

Abstract: The present invention provides a process for producing a superconducting transistor on a surface of an insulating substrate. A pre-superconducting thin film contains a material that can be changed into a superconductor during subsequent processing but which is initially a non-superconductor. A thin film containing the material required by the pre-superconducting thin film is deposited in a preferred pattern on the pre-superconducting thin film. The assembly thus formed is heat treated to permit the material from the thin film to enter the pre-superconducting thin film, thereby forming superconducting regions in the pre-superconducting thin film in the preferred pattern. The superconducting regions form electrodes of the transistor.

Abstract: A microwave resonator includes a ground conductor formed on an under surface of a dielectric layer and a signal conductor formed on an upper surface of the dielectric layer separately so that the signal and ground conductors cooperate to form a microstrip line. The signal conductor has a launching pad portion for receiving a signal, and a resonating conductor portion forming an inductor. The resonating conductor portion is formed separated from the launching pad portion so that a gap between the launching pad portion and the resonating conductor portion forms a capacitor. Thus, the inductor formed by the resonating conductor portion of the signal conductor and the capacitor formed by the gap between the launching pad portion and the resonating conductor portion form a resonator circuit.

Abstract: A structure having a surface exposed to electromagnetic radiation in the microwave or millimeter-wave spectrum wherein discrete elements including a high-temperature superconducting film formed on a substrate are disposed on the surface.

Abstract: In a method of manufacturing a superconducting device which has a first thin film of oxide superconductor material formed on a substrate and a second thin film formed on the first thin film of oxide superconductor material, after the second thin film is deposited on the first thin film of oxide superconductor material, a multi-layer structure formed of the first and second thin films is patterned so that a side surface of the first thin film is exposed. In this condition, the whole of the substrate is heated in an O.sub.2 atmosphere or in an O.sub.3 atmosphere so that oxygen is entrapped into the first thin film of oxide superconductor material. Thereafter, the patterned multi-layer structure is preferably covered with a protection coating.

Abstract: A method of treating an oxide superconductor to prevent degradation thereof comprises treating the superconductor with a solution of a metal which is capable of being oxidized by the superconductor to form on those regions of the surface area of the superconductor treated with the solution an insulating, non-porous protective film of an oxide which is stable against further oxidation.

Abstract: An oxide superconducting thin film formed by laser ablation comprises a matrix formed of c-axis oriented superconducting phases and foreign phases which are different in crystal orientation from the matrix. In order to improve critical current density of the oxide superconducting thin film, preferably selected are such conditions that the size of each superconducting phase in its a-b plane is not more than 0.1 .mu.m in diameter, the size of each superconducting phase along its c-axis direction is equal to the thickness of the oxide superconducting thin film, the foreign phases at least partially pass through the oxide superconducting thin film along the direction of thickness, the size of each foreign phase is at least 0.01 .mu.m and not more than 5 .mu.m in diameter, each foreign phase has an a-axis or a c-axis perpendicularly oriented with respect to the major surface of the oxide superconducting thin film, and the like.

Abstract: A device for modulating light, wherein a layer of material having a superconducting state is placed in the optical path of a light source and is switched between transparent, non-superconducting and non-transparent, superconducting states by a modulation circuit, thereby providing optical data modulation. A cooling device is provided to maintain the layer of material in its superconducting state. The light source is maintained at a constant optical output which reduces spectral dispersion.

Abstract: A variable superconducting delay line system and method having a high temperature superconducting trace and ground plane characterized by a variable inductance L per unit length and capacitance C per unit length, wherein the system and method permit users to select a delay time for an incoming signal propagating through a the transmission line. The system is adapted to keep the ratio of L/C constant, while independently changing L and C to achieve the desired delay time, which corresponds to the product of L times C.

Abstract: The superconducting structure for magnetic shielding according to the present invention comprises at least two layers of a superconducting layer and a substrate. This superconducting structure for magnetic shielding can be formed in a plate-like shape or a cylindrical shape. When the structure is prepared in three-layers by providing an intermediate layer between the superconducting layer and the substrate, the three-layered structure has improved superconducting properties. When a protective layer is provided on the superconducting layer to protect the layer, the resulting structure has improved thermal shock resistance. The intermediate layer preferably consists of a ceramic or a noble metal and the ceramic preferably consists of a glass.

Abstract: An oxide-superconducting device comprises first and second electrodes of oxide-superconductor which are connected through a tunnel barrier layer. The oxide-superconductor is formed on a substrate having a recess, and it includes grain boundaries along the recess. The tunnel barrier layer is formed along the grain boundaries, and it is made of any material of an element F, Cl, Br, I, C, O, S, P or N, a mixture consisting of such elements, and a compound containing such an element, the material being introduced into the grain boundaries and/or lattice interstices near the grain boundaries.

Abstract: A method for generating repeatable and reproducible crystallographic grain-boundary junctions is provided by forming a film on a crystalline substrate which has intersecting faces. In a preferred embodiment, a single crystal substrate is etched by an anisotropic etchant to provide a "V"-groove in one face, and an epitaxial superconducting film is grown on the faces of the V-groove. In another preferred embodiment, a step is etched with an anisotropic etch, and an epitaxial superconducting film grown on the step. Grain-boundary junctions are formed at the points of intersection of the faces with each other, or with the faces and the surface of the substrate. The film may be patterned and etched in the area of the boundary junction to form useful devices.

Abstract: Disclosed here is a shaped article superconductor comprising platelets of superconducting oxide crystals which are normally anisotropic but in which said anisotropy is reduced by joining together the oxides superconductor crystallites with a normally conductive metal layer interposed therebetween. The separation distances of the platelets are, on the average, less than the coherence length of the normally conductive metal under conditions which render the oxide crystals superconductive.

Abstract: A method for manufacturing a superconductive multilayer circuit has a first thin film forming step for forming a thin film, which is composed of superconductive material or a similar material thereto, on a substrate, a first circuit layer forming step for forming a superconductive circuit by discharging a specific component from a predetermined part of the thin film or implanting the component in the thin film, a second thin film forming step for forming a thin film, which is composed of a superconducting material or the simulant thereto, on the first circuit layer, and a second circuit layer forming step for forming a superconductive circuit by removing a specific component from a predetermined part of the thin film or implanting the component in the thin film.

Abstract: Bi-based superconducting ceramic films having high Tc's and high critical current densities are formed. The superconducting film is formed on a non-superconducting saubstrate of Bi.sub.2 Sr.sub.1-x Ca.sub.x O.sub.y. Due to crystalline similarity between the superconducting film and the underlying ceramic substrate, the crystalline structure of the film is improved. There are few impurities which contaminate the superconducting film since the constituent elements of the substrate are also the consitutents of the superconducting film.

Abstract: An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.

Abstract: A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe.The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.

Abstract: A superconductive ceramic wire or film comprises 100 parts by weight of superconductive oxide crystal composed of a rare earth element, an alkaline earth metal, copper, and oxygen, and 0.2-5.0 parts by weight of copper oxide, thereof.

Abstract: A stripline filter with suppressed electro-magnetic leakage. A filter topology suppresses generation of spurious waveguide modes by structuring microstrip launchers to operate as a waveguide way beyond cutoff of the waveguide modes, and by damping out remaining waveguide mode energy with lossy stripes in the filter package.

Abstract: A ceramic superconductor comprises a substantially nonmagnetic preannealed nickel-based alloy substrate which supports a ceramic superconductor. The substrate may include aluminum to strengthen the substrate, make it less magnetic and enhance its chemical compatibility with the ceramic superconductor. The ceramic is formed on the substrate by sintering superconductor grains at temperatures above 1000.degree. C. to enhance densification of the ceramic.

Abstract: The invention relates to a new method for the separation of gaseous paramagnetic species from diamagnetic or weakly paramagnetic gaseous species by contacting the mixture of such species with a high Tc superconductive material in permeable form, so that one of the species is enriched respective of the other one by permeation through such porous barrier.

Abstract: A supported superconductor is made where a top layer of alkaline earth metal-copper oxide based material (10) is applied to a buffer layer (14) of La.sub.2-x Sr.sub.x CuO.sub.4, where x is a value from 0 to 0.4, all of which is supported by a bottom layer (12) of .alpha.-Al.sub.2 O.sub.3.

Abstract: A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.

Abstract: A superconducting variable phase shifter providing improved performance in the microwave and millimeter wave frequency ranges. The superconducting variable phase shifter includes a transmission line and an array of superconducting quantum interference devices (SQUID's) connected in parallel with and distributed along the length of the transmission line. A DC control current I.sub.DC varies the inductance of the individual SQUID's and thereby the distributed inductance of the transmission line, thus controlling the propagation speed, or phase shift, of signals carried by the transmission line. The superconducting variable phase shifter provides a continuously variable time delay or phase shift over a wide signal bandwidth and over a wide range of frequencies, with an insertion loss of less than 1 dB. The phase shifter requires less than a milliwatt of power and, if one or more of the Josephson junctions fails, the whole device remains operational, since the SQUID's are connected in parallel.

Abstract: A laminated ceramic superconductor which comprises at least two layers of ceramic superconductor and a stabilizing metal layer interposed between said ceramic superconductor layers, which has improved flexibility and increased critical current density.

Abstract: A pre-existing superconductor ceramic which is bonded to a substrate is passed through a relatively short heating zone to melt the ceramic superconductor. As the superconductor is subsequently cooled after it has passed through the heating zone, a temperature gradient is established along the superconductor which causes the melted crystals to renucleate and grow along and parallel to the temperature gradient. The resulting crystalline structure exhibits improved superconducting properties when the superconductor is placed in the presence of a magnetic field. For appropriate applications, the substrate can be formed as a wire.

Abstract: A superconducting thick film circuit board or thick film superconductor obtained by forming a rod-like crystal superconducting composite layer comprising a superconductor made of a compound of M-Ba-Cu-O, M being Y and/or a lanthanide element, and a composite of Ag and Pt on a stabilized zirconia substrate has a high Jc value and good superconducting properties.

Abstract: A flexible superconducting wire element comprising a flexible tape of partially stabilized (.about.3 mole % yttria) yttria-stabilized zirconia (YSZ), a buffer layer of fully stabilized (between 8 and 18 mole % yttria, preferably 9 mole %) YSZ deposited on the flexible tape, and a high-temperature, perovskite superconductor such as YBaCuO deposited on the buffer layer. The tape provides the strength while remaining flexible. The buffer layer is flexible because of its thinness (.about.100 nm), but provides a good crystallographic template for the growth of oriented perovskite superconductors. Thereby, the superconducting properties of the wire element approach those of a superconducting film deposited on a rigid substrate.

Abstract: A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Abstract: A superconducting wire comprises a flexible base material having average surface roughness of not more than 0.05 .mu.m and an oxide superconducting layer formed on the base material.A superconducting wire comprises a flexible base material of yttria stabilized zirconia containing less than 0.1 percent by weight of an Al impurity and an oxide superconducting layer formed on the base material.

Abstract: A method is disclosed for forming a patterned oxide superconducting film wherein a selected region of a ternary metal oxide superconducting film is irradiated in a controlled atmosphere with photons so as to become non-superconductive.

Abstract: The superconducting device according to the present invention is provided with a superconducting thin film of the Tl-Ba-Ca-Cu oxide deposited on a substrate thereof. Consequently, the device can be produced at a low cost because no rare earth elements are required.The superconducting thin film according to the present invention is formed by sputtering on substrate from a Tl-Ba-Ca-Cu oxide target by means of the sputtering method, followed by annealing in an oxidizing atmosphere. In this way, according to the present invention, it is possible to produce a superconducting thin film of the Tl-Ba-Ca-Cu oxide in a simple way by using an ordinary sputtering apparatus.

Abstract: A superconductive magneto-resistive device includes superconductive ceramic films having a magneto-resistive effect. In the superconductive magneto-resistive device, the superconductive ceramic films are laminated one by one, and the adjacent superconductive ceramic films are insulated by each electrical insulation film, respectively, except for one portion of each of the adjacent superconductive ceramic films, resulting in that the superconductive ceramic films are connected in series. Furthermore, a pair of electrodes is arranged on the upper-most and lower-most superconductive ceramic films.

Abstract: A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi.sub.2 O.sub.3 being interposed between the superconducting thin film and the substrate.

Abstract: A thin film superconductor assembly is disclosed along with a method of fabricating same. The assembly comprises a self-supporting substrate defining at least a portion of a containment for a flow of cryogenic fluid, a dielectric layer adherent to a surface of the substrate, a thin film superconductor adherent to the dielectric layer and a moisture and oxygen impervious electrically insulating coating covering the thin film superconductor. A method of forming such thin film superconductor assembly, wherein the dielectric layer consists essentially of aluminum nitride, comprises growing the aluminum nitride dielectric layer integrally on the surface of the substrate.

Abstract: A HTSC layered structure comprising a substrate such as sapphire, a strontium titanate buffer layer and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7 provides a superconductor having lower surface resistance and a narrower transition temperature.

Abstract: A superconducting composite material comprising a superconducting element, coated on its exterior surface with noble or inert metal, in a conductive metal matrix which includes nonsuperconducting fibers. The superconducting element may suitably comprise a filament of 123 metal oxide high temperature superconductor (MOHTSC) material, or other metal oxide superconductive material. The composite structure of the invention overcomes the inherent brittleness of metal oxide-type superconductive materials and the sensitivity to flaws to which MOHTSC materials are suceptible. The noble or inert metal and conductive matrix metal may suitably be applied by MOCVD techniques. A preferred form of the superconducting article of the present invention is a tape comprising a generally planar array of superconductive filaments, for applications such as energy storage devices, power transmission and propulsion systems that require large magnetic fields, transformers, motors, and generators.

Abstract: The superconducting material YBa.sub.2 Cu.sub.3 O.sub.7, which loses its superconducting qualities when exposed to water, is passivated against such water damage by a thin film on its surface comprised of a mixed phase which includes YBa.sub.2 Cu.sub.3 O.sub.(7-x) F.sub.2x, where 0<X.ltoreq.1/2.

Abstract: A HTSC layered structure comprising a substrate such as calcium titanate and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7. Use of a thin buffer layer of calcium titanate on sapphire provides a YBa.sub.2 Cu.sub.3 O.sub.7-x film with higher critical current.

Abstract: A cubic perovskite crystal structure is disclosed satisfying the unit cell formula:R.sub.0.33+z A.sub.0.67 C.sub.1-y O.sub.3-xwhereR, A and C represent rare earth, alkaline earth and copper atoms, respectively, capable of forming a superconductive R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure;x is 0.67 to 1.0;y is up to 0.2; andz is up to 0.1.The crystal structure can be used to form superconductive superlattices and weak links for Josephson junction devices. The crystal structure can be produced by laser ablation deposition at a temperature below that required for the formation of a superconductive R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure. The crystal structure can be used as a substrate for the subsequent deposition of an R.sub.1 A.sub.2 C.sub.3 orthorhombic perovskite crystal structure.

Abstract: A superconducting fiber bundle includes carrier material formed by fibers of carbon, silicon carbide, steel, boron or glass. The fibers have a superconducting coating formed of a superconducting, non-metallic, inorganic material. The coating of the fibers is carried out from the liquid phase or the gas phase.

Abstract: A super conducting material is disclosed which exhibits super conducting properties at higher temperature than known so far. The super conducting by the invented materials is exhibited at temperatures of over 110.degree. K. Various combinations of the components exhibits superconductivities even at temperatures of around 273.degree. K. or even around 300.degree. K. Contrary to known art superconducting materials, which require super cooled conditions and are suited only to sophisticated applications, and thereby have limited applications, the materials of this inventions do not always require super cooled conditions are suited for limitless applications and can work even at room temperature conditions. While a large range of choice of materials are suggested a few important combinations are made of oxides of Bismuth, Barium and Copper. Replacement of Barium by Thantalium gives additional advantages.

Abstract: There is disclosed the structure of a superconductive wiring fabricated on an insulating substrate comprising a conductive pattern having at least one wiring strip of a superconductive ceramic formed on the insulating substrate and a protective film covering the wiring pattern and formed of a basic oxide, the basic oxide hardly reacts with the superconductive ceramic because of the fact that most of the superconductive ceramics are bases, then the wiring strip is allowed to stay in the superconductive state for a prolonged period of time.