Josephson Junction Present Patents (Class 505/702)
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Patent number: 4988674Abstract: A flexible electrically conductive article is disclosed comprised of an organic film, a conductive crystalline cuprate layer, and a release layer that together form a flexible electrically conductive assembly. The article is prepared by forming a conductive cuprate layer on a refractory substrate with the release interposed. After the cuprate layer is formed, the organic film is bonded to it, permitting the cuprate layer to be stripped intact from the substrate with the organic film. A crystal growth accelerating agent can be associated with the cuprate layer during its formation to minimize the heat energy required for crystallization.Type: GrantFiled: February 9, 1989Date of Patent: January 29, 1991Assignee: Eastman Kodak CompanyInventors: Jose M. Mir, Liang-sun Hung
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Patent number: 4980341Abstract: A superconducting electronic device utilizes a weak link (Josephson junction) between two regions of superconductor material. A method of making such a device having a granular structure consists of taking a substrate with a predetermined grain size, and forming a thin film of superconducting ceramic upon it. The film adopts the grain size and structure of the substrate, and the film is then processed to form two relatively large areas of granular film connected by a thin link which contains a single grain boundary which acts as the weak link.Type: GrantFiled: February 21, 1989Date of Patent: December 25, 1990Assignee: The General Electric Company, p.l.c.Inventor: Karl A. Gehring
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Patent number: 4980339Abstract: A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.Type: GrantFiled: July 25, 1988Date of Patent: December 25, 1990Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kentaro Setsune, Takeshi Kamada, Hideaki Adachi, Kiyotaka Wasa, Takashi Hirao, Osamu Yamazaki, Hidetaka Higashino
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Patent number: 4975413Abstract: Superconducting composites are made from ceramic-type superconductors coated onto a low resistivity carbon fiber selected from those high strength fibers which have an ultrahigh modulus and high thermal conductivity. Flexible conductors of several different structures made from such composites are described as well as other useful forms of the composites.Type: GrantFiled: August 12, 1987Date of Patent: December 4, 1990Assignee: Amoco CorporationInventors: Larry C. Satek, William F. Bennett, David A. Schulz
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Patent number: 4970197Abstract: An oxide superconductor including an oxide superconductor member and a hermetical seal layer, coated over the oxide superconductor member, for hermetically sealing the oxide superconductor member from the atmosphere.Type: GrantFiled: April 22, 1988Date of Patent: November 13, 1990Assignee: Fujikura Ltd.Inventors: Takao Shiota, Hiroshi Hidaka, Koichi Takahashi, Masahiro Sato, Osamu Fukuda
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Patent number: 4968664Abstract: A superconductive ceramic thin film-formed single-crystal wafer comprising a single-crystal wafer, an intermediate ceramic thin film formed on a surface of the single-crystal wafer, and a superconductive ceramic thin film formed on the intermediate ceramic thin film. The intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio of Bi.sub.2 Sr.sub.2 Ca.sub.x O.sub.y (provided that x: 1 to 2; and y: 6 to 7), and the superconductive ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8 and Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10. Alternatively, the intermediate ceramic thin film comprises, as a main phase, a crystalline phase having a composition by atomic ratio selected from the group consisting of Tl.sub.1 Ba.sub.2 Ca.sub.s O.sub.t (provided that s: 1 to 2; and t: 4.5 to 5.5) and Tl.sub.2 Ba.sub.2 Ca.sub.v O.sub.Type: GrantFiled: August 9, 1989Date of Patent: November 6, 1990Assignee: Mitsubishi Metal CorporationInventors: Tadashi Sugihara, Takuo Takeshita
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Patent number: 4966885Abstract: A method for fabricating thin smooth films of a planar metal oxide superconductor is disclosed. Fabrication of the superconductor film comprises depositing, on a substrate, a film of the planar metal oxide superconductor having a thickness greater than desired, and thinning at least a portion of the superconductor film to the desired thickness. In a particular embodiment of the method, thinning comprises exposing the superconductor film to a low energy ion beam directed at grazing incidence to the superconductor surface. Thin superconductor films fabricated in accordance with this method typically have substantially smooth surfaces and can have relatively low RF loss. These films can be advantageously used, inter alia, in RF striplines, microwave cavities and waveguides, bolometers, SQUIDs, and other Josephson junction devices.Type: GrantFiled: August 25, 1989Date of Patent: October 30, 1990Assignee: AT&T Bell LaboratoriesInventor: Arthur F. Hebard
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Patent number: 4965247Abstract: A superconducting coil comprising a support (1,10) and at least one ring-shaped and/or spiral turn (2) of superconductor which is composed of superconducting compound oxide and is supported on a surface of said support.Type: GrantFiled: July 5, 1988Date of Patent: October 23, 1990Assignee: Sumitomo Electric Industries, Ltd.Inventor: Masanori Nishiguchi
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Patent number: 4962086Abstract: High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.Type: GrantFiled: June 8, 1988Date of Patent: October 9, 1990Assignee: International Business Machines CorporationInventors: William J. Gallagher, Edward A. Giess, Aranava Gupta, Robert B. Laibowitz, Eugene J. O'Sullivan, Robert L. Sandstrom
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Patent number: 4959346Abstract: A composite is produced comprised of Y--Ba--Cu--O superconductive film having a zero resistance transition temperature of at least about 38 K, a zirconium dioxide film and a substrate wherein the zirconium dioxide film is intermediate the superconductive film and the substrate.Type: GrantFiled: May 22, 1989Date of Patent: September 25, 1990Assignee: General Electric CompanyInventors: Antonio Mogro-Campero, Larry G. Turner
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Patent number: 4956335Abstract: A patterned crystalline superconducting layer is formed by first providing a copper oxide lift-off layer under an amorphous metal oxide superconducing precursor layer and then photolithographically forming a pattern in the layers. The patterned layers are then heat treated to form the final crystalline superconducting layer.Type: GrantFiled: June 20, 1988Date of Patent: September 11, 1990Assignee: Eastman Kodak CompanyInventors: John A. Agostinelli, Gerrit Lubberts
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Patent number: 4954480Abstract: A multi-layer superconducting circuit substrate, including insulating layers, and interconnection patterns of a superconductive ceramic material located between the insulating layers, the patterns of the superconductive ceramic material being connected via through-holes of the superconductive ceramic material, is provided. The patterns of the superconductive ceramic material are preferably encapsulated with a metal of gold, silver, platinum or an alloy thereof.Type: GrantFiled: April 27, 1988Date of Patent: September 4, 1990Assignee: Fujitsu LimitedInventors: Yoshihiko Imanaka, Takato Machi, Kazunori Yamanaka, Hiromitsu Yokoyama, Nobuo Kamehara, Koichi Niwa
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Patent number: 4954481Abstract: Superconductor-polymer composite materials comprise a matrix formed of a rmoplastic polymer and a superconductor powder dispersed in the matrix. The superconductor powder preferably has a composition RBa.sub.2 Cu.sub.3 O.sub.7-x wherein R is a rare earth metal and x is less than or equal to 1. The thermoplastic polymer matrix comprises a vinylidene fluoride homopolymer or copolymer. The composite materials may be formed as shaped products, sheets or films.Type: GrantFiled: December 29, 1988Date of Patent: September 4, 1990Assignee: The United States of America as represented by the Secretary of CommerceInventors: Aime S. DeReggi, Chwan-Kang Chiang, George T. Davis
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Patent number: 4948779Abstract: Superconductive thin layer of YBa.sub.2 Cu.sub.3 O.sub.7-.delta. in which reactions with the substrate are prevented in that at least the surface of the substrate consists of a compound having such a composition that in the Y.sub.2 O.sub.3 -BaO-CuO phase diagram it is situated on a segregation line with YBa.sub.2 Cu.sub.3 O.sub.7-.delta. as shown in FIG. 1.Type: GrantFiled: July 26, 1988Date of Patent: August 14, 1990Assignee: U.S. Philips CorporationInventors: Wilhelmus C. Keur, Cornelis A. H. A. Mutsaers, Henricus A. M. Van Hal
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Patent number: 4942142Abstract: An outer surface of a superconducting thin film of compound oxide such as YBa.sub.2 Cu.sub.3 O.sub.7-.delta. deposited on a substrate such as MgO and SrTiO.sub.3 is protected with a protective layer which is composed of polymer compound such as polyimide, silicon resin or epoxy resin.Type: GrantFiled: July 27, 1988Date of Patent: July 17, 1990Assignee: Sumitomo Electric Industries Ltd.Inventors: Hideo Itozaki, Saburo Tanaka, Nobuhiko Fujita, Shuji Yazu, Tetsuji Jodai
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Patent number: 4940693Abstract: The use of a highly stable, lattice-matched barrier layer grown epitaxially on a suitable substrate, and permitting the subsequent epitaxial growth of a thin high-temperature superconducting film with optimized properties.Type: GrantFiled: July 28, 1988Date of Patent: July 10, 1990Assignee: The United States of America as represented by the Secretary of the ArmyInventors: Joel R. Shappirio, Thomas R. Aucoin, John J. Finnegan
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Patent number: 4929597Abstract: A superconductor according to the present invention contains an internal stress absorbing substance of a copper oxide and/or a barium oxide distributed over the superconductive oxide, so that the superconductor is free from cracks due to thermal stresses produced in a heat treatment.Type: GrantFiled: March 27, 1989Date of Patent: May 29, 1990Assignee: Mitsubishi Metal CorporationInventors: Takuo Takeshita, Tadashi Sugihara, Shuichi Fujino
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Patent number: 4921833Abstract: A superconducting member comprising a first film including least a single ceramic layer formed on the surface of a substrate of an arbitrary base material. A film of an oxide superconductor is formed on the first film. In a useful embodiment, the substrate is stainless steel, and the first ceramic layer by zirconium oxide. This superconducting member can be formed as a superconducting tape, a superconducting wire or the like.Type: GrantFiled: May 25, 1988Date of Patent: May 1, 1990Assignee: Sumitomo Electric Industries, Ltd.Inventor: Satoshi Takano
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Patent number: 4908348Abstract: A barrier layer triad intended to protect a silicon substrate and an overlying conductive layer from mutual contamination is disclosed as well as a process for its preparation. The barrier layer triad is comprised of a first triad layer located adjacent the silicon substrate consisting essentially of silica, a third triad layer remote from the silicon substrate consisting essentially of at least one Group 4 heavy metal oxide, and a second triad layer interposed between the first and third triad layers consisting essentially of a mixture of silica and at least one Group 4 heavy metal oxide.Type: GrantFiled: February 8, 1988Date of Patent: March 13, 1990Assignee: Eastman Kodak CompanyInventors: Liang-Sun Hung, John A. Agostinelli