Abstract: A seed crystal for the fabrication of a superconductor is grown from a rare-earth oxide having the basic formula XwZtBaxCuyOz, X comprising at least one rare-earth element and Z being a dopant which raises the peritectic decomposition temperature (Tp) of the oxide. In a preferred embodiment, the dopant is Mg. Use of this rare-earth oxide material for seed crystals increases the temperature at which cold-seeding can be performed and thus enables the growth of a wider range of bulk superconductor materials by this process.

Abstract: A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4 or a vicinal cut substrate of a single crystal of LaSrAlO4 is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2 (double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.

Abstract: The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10 (Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.

Abstract: The invention relates to multi-layer articles and methods of making such articles. The methods include first conditioning the surface of an underlying layer, such as a buffer layer or a superconductor layer, then disposing a layer of material on the conditioned surface. The conditioned surface can be a high quality surface. Superconductor articles formed by these methods can exhibit relatively high critical current densities.

Abstract: A method for fabricating superconductor articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous features, including low pore density and/or inclusions with small average particle size diameter.

Abstract: The invention provides an oxide superconductor capable of sufficiently withstanding external forces such as a large electromagnetic force and thermal stresses accompanying rapid heating and cooling while in service, and internal stresses so as to be able to exhibit a high trapped magnetic field stably over a long period of time. The oxide superconductor such as, for example, “a copper oxide superconductor containing rare earth elements”, is composed of an oxide superconductive bulk body impregnated with a low melting metal or an oxide superconductive bulk body impregnated with a low melting metal and having a thin film of the low melting metal formed on the external surface thereof. Such oxide superconductors as described above can be produced by a process whereby the oxide superconductive bulk body kept in an atmosphere of reduced pressure is brought into contact with the low melting metal.

Abstract: A process for preparing an oxide superconductor thin film which has a high crystalline, clean and excellent superconductive surface on a substrate by MBE. The MBE is effected under a condition that the substrate is heated and an oxidizing gas is locally supplied to the proximity of the substrate so that the pressure of the proximity of the substrate becomes 6×10−6 to 8×10−5 Torr at a background pressure.

Abstract: An oxide superconductor which has high mechanical strength and exhibits favorable magnetic properties and high resistance to environment. Further, a method of manufacturing this oxide superconductor, namely, a method of manufacturing a RE--Ba--Cu--O oxide superconductor (RE is one or more kinds of rare earth elements including Y) by performing a treatment, which includes at least a burning process to be performed in a range of temperatures that are higher than the melting point of a raw material mixture containing a RE-compound raw material, a Ba-compound raw material and a Cu-compound raw material, on the aforesaid raw material mixture. This method further comprises the addition step of adding 1 to 30 in percent by weight (wt %) of Ag to the raw material mixture, and the crystallization step of melting the raw material mixture, to which Ag is added, at a temperature that is not lower than a temperature at which the raw material mixture is decomposed and fused into the RE.sub.2 BaCuO.sub.

Abstract: Provided is a method of preparing a large-sized oxide superconducting bulk body having excellent characteristics and high homogeneity. The method is adapted to prepare an oxide superconducting bulk body by melt growth through a seed crystal method, and comprises steps of preparing a precursor by press-molding material powder obtained by mixing REBa.sub.2 Cu.sub.3 O.sub.7-z powder with RE.sub.2 BaCuO.sub.5 or RE.sub.4 Ba.sub.2 Cu.sub.2 O.sub.10 powder and a platinum additive, homogeneously semi-melting the precursor by holding the same at a holding temperature T.sub.1 .degree. C. (t.sub.1 +20.ltoreq.T.sub.1 .ltoreq.t.sub.1 +80 assuming that the melting point of the oxide superconducting bulk body is t.sub.1 .degree. C.) for a prescribed time, and crystal-growing the precursor at a temperature not more than the melting point t.sub.1 .degree. C.

Abstract: A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer.

Abstract: We make large (in excess of 2 cm in diameter), single crystal YBa.sub.2 Cu.sub.3 O.sub.7-x [123 YBCO] crystals, where x.ltoreq.0.6, in a seventeen step process or some variant thereof from finely ground and well mixed 123 YBCO and 211 YBCO powders with a small amount of Pt by controlling the rate of cooling from within a compact of the powders using a temperature gradient in the radial and axial planes (independently) of about 1-1.degree. C./inch diameter of compact to nucleate the crystal growth. We promote crystal growth as well using a samarium oxide seed crystal, preferably SmBa.sub.2 Cu.sub.3 O.sub.(7-y), where y.ltoreq.1.6. After nucleation we cool the compact slowly at a rate from about 0.1-1.degree. C./hr to promote the single crystal development.

Abstract: The present invention is aimed to provide a means for manufacturing a RE123 system oxide superconductor showing good superconductivity characteristics under atmospheric ambiance.

Abstract: A method for fabricating composite articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous properties, such as low pore density and/or inclusions with small average particle size diameter.

Abstract: A method for fabricating superconductor articles with an epitaxial layer is described. The method can be performed under conditions of relatively high pressure and low substrate surface temperature. The resulting epitaxial layers can demonstrate various advantageous features, including low pore density and/or inclusions with small average particle size diameter.

Abstract: The present invention can provide an oxide superconductive film with a smooth surface and at homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa.sub.2 Cu.sub.3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at. % of oxygen and 98 at. % of nitrogen, and the film formation temperature is 900 to 970.degree. C.

Abstract: A high critical temperature and high critical current density superconductor containing a matrix phase of a metal oxide expressed by the formula RE.sup.1 Ba.sub.2 Cu.sub.3 O.sub.p wherein RE.sup.1 stands for La, Nd, Sm, Eu or Gd and p is a number of 6.8-7.2, a first dispersed phase of a metal oxide expressed by the formula RE.sup.2.sub.1+d Ba.sub.2-d Cu.sub.3 O.sub.q wherein RE.sup.2 stands for La, Nd, Sm, Eu or Gd, d is a number of 0<d<0.5 and q is a number of 6.0-7.2 and a second dispersed phase of a metal oxide expressed by the formula RE.sup.3.sub.4-2x Ba.sub.2+2x Cu.sub.2-x O.sub.10-y wherein RE stands for La or Nd, x is a number of 0<x .English Pound.0.25 and y is a number of 0<y<0.5. The first and second phases are dispersed in the matrix. The above superconductor may be prepared by cooling a partial melt having a temperature of 1,000.degree.-1,300.degree. C. and containing a major molar amount of RE.sup.1 Ba.sub.2 Cu.sub.3 O.sub.p and a minor molar amount of RE.sup.3.sub.4-2x Ba.sub.

Abstract: A process for preparing an oxide crystal by means of solution growth in the presence of a solvent is provided. The solvent includes a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal, a halide containing at least one member of those elements which constitute the oxide crystal, and metallic silver.

Abstract: An oxide superconductor which has high mechanical strength and exhibits favorable magnetic properties and high resistance to environment. Further, a method of manufacturing this oxide superconductor, namely, a method of manufacturing a RE--Ba--Cu--O oxide superconductor (RE is one or more kinds of rare earth elements including Y) by performing a treatment, which includes at least a burning process to be performed in a range of temperatures that are higher than the melting point of a raw material mixture containing a RE-compound raw material, a Ba-compound raw material and a Cu-compound raw material, on the aforesaid raw material mixture. This method further comprises the addition step of adding 1 to 30 in percent by weight (wt %) of Ag to the raw material mixture, and the crystallization step of melting the raw material mixture, to which Ag is added, at a temperature that is not lower than a temperature at which the raw material mixture is decomposed and fused into the RE.sub.2 BaCuO.sub.

Abstract: PrBa.sub.2 Cu.sub.3 O.sub.Y exhibiting superconductivity is provided by a method including the steps of preparing a solvent consisting of a mixture of praseodymium oxide, at least one of barium oxide and barium carbonate, and copper oxide at a mixing ratio of between 1:3:5 and 1:8:20, disposing the solvent between a feed rod of PrBa.sub.2 Cu.sub.3 O.sub.7 formed to a high density and a seed crystal, heating the solvent to a temperature of 880.degree.-980.degree. C. in an atmosphere of an inert gas of at least one of argon and nitrogen mixed with 0.01-2% oxygen to form a floating solvent zone, moving the floating solvent zone toward the feed rod at 0.1-1.0 mm/hr under a temperature gradient at the solid-liquid interface of 25.degree.-35.degree. C./mm to precipitate single crystal on the seed crystal, and heat-treating the single crystal obtained in an atmosphere containing not less than 15% oxygen. Another aspect of the invention provides a superconducting device including the superconducting PrBa.sub.2 Cu.

Abstract: A large oxide crystal of high quality is manufactured by increasing the speed of crystal growth without affecting crystal growth. A melt of BaO--CuO as a raw material put in a crucible is heated and melt in the presence of a solid phase precipitate of Y.sub.2 BaCuO.sub.5 and kept at a prescribed temperature. Thereafter, a seed crystal is pulled up while being rotated, with the seed crystal being in contact with the surface of the melt, whereby an oxide crystal having the structure of YBa.sub.2 Cu.sub.3 O.sub.7-x this method, an atmosphere for growing the oxide crystal has an oxygen partial pressure higher than that in an ambient atmosphere.

Abstract: Novel superconducting oxide material containing compound oxide having a composition represented by the formula:?(Tl.sub.1-x Bi.sub.x).sub.1-p .alpha..sub.p !.sub.q Sr.sub.y Ca.sub.z Cu.sub.v O.sub.win which ".alpha." is at least one element selected from a group consisting of In, Sn, Sb, Pb, Y and lanthanide elements and "x", "y", "z", "p", "q", "v" and "w" are numbers each satisfying respective range of 0.ltoreq.x.ltoreq.1.0, 0.5.ltoreq.y.ltoreq.4.0, 0.5.ltoreq.z.ltoreq.4.5, 0.ltoreq.p.ltoreq.0.6, 0.5.ltoreq..ltoreq.3.0, and 1.0.ltoreq.v.ltoreq.5.5.

Abstract: The invention relates to a process for producing textured high-temperature superconducting solid shaped parts, which comprises solid shaped parts made of oxide-ceramic superconducting material of a phase mixture of the substance class YBCO first being molded, pressed and sintered, a zonewise thermal treatment then being carried out along their longitudinal axis. Heating is first carried out, in a first zone, to a temperature in the range of from 50 to 200 K below the peritectic melting temperature of the phase mixture initially present in the shaped part, the temperature then is raised, in a second zone having a temperature gradient in the range of from 10 to 250 K/cm, then, in a third zone, a temperature of up to 50 K above the peritectic melting temperature of the phase mixture initially present in the shaped part is maintained, cooling then being carried out, in a fourth zone having a temperature gradient in the range of from 10 to 250 K/cm.

Abstract: A method for the production of a superconducting polycrystalline wire rod having all the crystal (a, b, c) axes thereof aligned is disclosed, which consists of a step of arraying a plurality of superconducting whiskers of a composition of Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 (Bi-2212 phase) in such a manner as to parallellize the fiber axes of the whiskers and then aligning all the crystal axes of the superconducting whiskers with parallellized fiber axes and a step of heat-treating the resultant whiskers.

Abstract: A lattice matching device includes a substrate having thereon monocrystal regions having different lattice mismatches with respect to a LnBa.sub.2 Cu.sub.3 O.sub.x superconductor. A superconducting thin film is formed on the substrate, which film consists essentially of a superconductor of LnBa.sub.2 Cu.sub.3 O.sub.x wherein Ln represents yttrium or a lanthanide, and 6<x<7. The first and second superconducting thin film portions have different axes of orientation perpendicular to a main surface of the substrate, and arranged in contact with each other or at a distance which allows transmission of electron pairs from one to another.

Abstract: A method of fabricating bulk YBa.sub.2 Cu.sub.3 O.sub.x where compressed powder oxides and/or carbonates of Y and Ba and Cu present in mole ratios to form YBa.sub.2 Cu.sub.3 O.sub.x are heated in the presence of a Nd.sub.1+x Ba.sub.2-x Cu.sub.3 O.sub.y seed crystal to a temperature sufficient to form a liquid phase in the YBa.sub.2 Cu.sub.3 O.sub.x while maintaining the seed crystal solid. The materials are slowly cooled to provide a YBa.sub.2 Cu.sub.3 O.sub.x material having a predetermined number of domains between 1 and 5. Crack-free single domain materials can be formed using either plate shaped seed crystals or cube shaped seed crystals with a pedestal of preferential orientation material.

Abstract: A process for controlling crystalline orientation of an oxide superconductive film includes a first-heat-treatment step, and a second-heat-treatment step. In the first-heat-treatment step, an oxide superconductive film is heated and held in non-oxidizing atmosphere. Accordingly, partial oxygen deficiency is caused in the oxide superconductive film. In the second-heat-treatment step, the oxide superconductive film is heated and held in oxygen-rich atmosphere. Consequently, oxygen is re-introduced into the oxide superconductive film. Thus, crystalline orientation of the oxide superconductive film is altered. The process enables to readily form not only an "a"-axis-oriented oxide superconductive film but also a "b"-axis-oriented oxide superconductive film.

Abstract: A thin film which is substantially free of measurable surface defects due to second-phase inclusions is disclosed. The film is composed of multilayered strata of a first metal oxide interspersed with single molecular layers of a second metal oxide, where the second metal oxide is effective to absorb second-phase defects which form in the first oxide layers.

Abstract: Fine epitaxial patterns of yttrium barium copper oxide on a strontium titanate substrate are provided by using a silicon nitride mask to define the pattern to be formed. A thin film of yttrium barium copper oxide is placed on the silicon nitride mask and exposed portions of strontium titanate substrate. Where the yttrium barium copper oxide is in contact with the silicon nitride mask, it is nonepitaxial in crystal structure. Where the yttrium barium copper oxide contacts the strontium titanate substrate in the openings, it is epitaxial in structure forming fine patterns that become superconducting below the critical transition temperature. A channel can be formed in the strontium titanate substrate. The epitaxial yttrium barium copper oxide pattern is formed in this channel to minimize possible exposure to the silicon nitride mask.

Abstract: Disclosed is an oxide superconductor comprising an oxide of RE, Ba and Cu, which consists of a superconductor having a texture wherein the crystal directions of the 123 phase in the matrix are uniform, large angle grain boundaries having an directional difference larger than 20.degree. are not present and the 211 phase is finely dispersed, or an aggregate thereof, wherein the superconductor is formed into a plate or wire and the c-axis of the crystal of the formed body is uniform within .+-.30.degree. to the normal of the plate face of the formed body or in the range of from 60.degree. to 120.degree. to said normal. Also disclosed is a process for the preparation of an oxide superconductor as set forth above, which comprises inserting a formed body as mentioned above to a heating furnace and moving a region of a temperature at which grains are formed in the 123 phase of the matrix of the formed body, i.e., through a region having a temperature of from 1050.degree. to 910.degree. C.

Abstract: Described is a process for manufacturing thin films by periodically depositing (DEP) a number of block layers consisting of different base materials on a substrate (multilayer deposition), wherein the thickness of the layers (LT) is restricted to one to 20 monolayers and deposition as well as crystallization of the thin film is completed at approximately constant temperature without performing a separate annealing step. The method can be used to produce thin films of high-T.sub.c -superconductors. It allows a better control of the crystal growth of ternary or higher compounds with comparatively large unit cells.

Abstract: A ceramic superconductive material (1) including a compound containing oxygen and at least two types of metal elements and having layer structure is molten in a vessel (2), at least an inner surface (3) of which is formed of a solid solution alloy having a base of gold or silver. Preferably the alloy is prepared from Au--5 to 40 wt. % Pd or Ag--5 to 40 wt. % Pd.

Abstract: A composite material is disclosed which includes a substrate, an oriented film provided on a surface of the substrate and formed of a crystal of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7, and a layer of a Y123 metal oxide of the formula LnBa.sub.2 Cu.sub.3 O.sub.y wherein Ln stands for Y or an element belonging to the lanthanoid and y is a number of 6-7 formed on the oriented film.

Abstract: A method of preparing a crystal of a Y-series 123 metal oxide is disclosed, in which a substrate is immersed in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the substrate contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the substrate and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the substrate as primary crystals.

Abstract: This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the selected superconductor material, while the other one has a lattice constant greater than the lattice constant of the perovskite subcell of the selected superconductor. These materials are then powdered and mixed intimately for providing a single-crystal either from the molten mixture of the chosen materials or by thin film deposition, said single-crystal containing appropriate molar percentages of the chosen materials so that resulting lattice constant is essentially the same as that of the selected superconductor material.

Abstract: In the production of a 124-type or 123-type superconductor by a sol-gel method using alkoxides of respective metals, the use of a compound wherein a sec-butoxy group and a hydroxy group are coordinated with a copper atom gives a superconductor composed of flat particles having a broad C plane. The dimensional ratio defined by l/d is at least 6.7 in the case of the 124-type or is at least 8.4 in the case of the 123-type. It shows a superconducting property at a liquid nitrogen temperature. This superconductor shows a higher critical current density than one obtained by a sintering method.

Abstract: A composite material comprising a bulky substrate of a Y-series 123 metal oxide crystal, and at least one layer provided on a surface of the substrate and formed of a crystal of a Y-series 123 metal oxide. The substrate may be produced by immersing a seed material in a liquid phase which comprises components constituting the metal oxide. The liquid phase contains a solid phase located at a position different from the position at which the seed material contacts the liquid phase. The solid phase provides the liquid phase with solutes which constitute the Y-series 123 metal oxide so that the solutes are transported to the position at which the seed material and the liquid phase contact, thereby permitting the Y-series 123 metal oxide to grow on the seed material as primary crystals and to obtain the bulky substrate. The layer of a Y-series 123 metal oxide may be formed on the substrate by a sputtering method, a vacuum deposition method, a laser abrasion method, a CVD method or a liquid phase epitaxy method.

Abstract: There is disclosed a method for annealing oxide thin film superconductors having layered structures including at least Cu--O layers in which each oxide thin film superconductor is heated partially by a heating means and the heating portion is moved at a predetermined speed.

Abstract: The present invention is directed to a method for growing a superconductive film on a superconductive substrate in order to produce a bulk single crystal. According to a preferred embodiment, an oxide superconductive film of a material which is the same or similar to the substrate material is epitaxially grown at a temperature between 450.degree. C. and 800.degree. C. so that the film and substrate have the same lattice orientations. According to the present invention, problems associated with conventional films having non-superconductor substrates (e.g., MgO and SrTiO.sub.3) are avoided.

Abstract: A method of producing a high-temperature oxide superconducting material, which comprises the steps of (a) preparing a material corresponding to an oxide superconductor of the perovskite type structure consisting essentially of a first member selected from the group consisting yttrium, lanthanoids, thallium and bismuth; at least one alkaline earth metal; copper; and oxygen and (b) heating the material in the presence of an alkali metal selected from the group consisting of potassium, sodium, rubidium and cesium to a temperature around the melting point of the alkali metal or to a higher temperature for a time sufficient to effect grain growth in the superconductor material, thereby to produce the superconductor containing the alkali metal in an amount not larger than 4 mole % based on the first member.

Abstract: A method of preparing high temperature superconductor single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid.

Abstract: Disclosed is a method of manufacturing a thin film of an oxide superconductor represented by formula Sr.sub.1-x Nd.sub.x CuO.sub.2 on a substrate. The oxide superconductor has a tetragonal crystal structure, the lattice constant in a-axis falling within a range of between 0.385 nm and 0.410 nm, and the lattice constant in c-axis being an integer number of times as much as a level falling within a range of between 0.310 nm and 0.350 nm. The method includes the steps of forming by epitaxial growth a film of a crystal having lattice constants close to those of the crystal of said oxide superconductor on a substrate, and forming a thin film of the oxide superconductor of a tetragonal crystal structure represented by general formula (I) by a thin film-forming technique.

Abstract: A method of manufacturing a superconducting device involves forming a thin film on the surface of a substrate, forming a superconducting gate electrode on a portion of the thin film, etching the portions of the thin film using the gate electrode as a mask thereby providing a superconducting channel under the gate, forming a step portion on the superconducting channel and under the gate, converting the oxide portion of the step portion into a gate insulation portion by heating the substrate in a vacuum, forming a second oxide superconducting film on the exposed surface of the channel so that superconducting source and drain electrodes are formed on each side of the gate such that the drain and source have a thickness greater than that of the channel and are electrically isolated from the gate electrode.

Abstract: A Josephson junction device comprises a single crystalline substrate including a principal surface having a first and a second regions of which at least lattice distance of exposed lattices are slightly different from each other and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second portions respectively positioned on the first and the second regions of the substrate, which are constituted of single crystals of the oxide superconductor, lattices of the one shifts at angle of 45.degree. to that of the other, and a grain boundary between said two portions, which constitutes a weak link of the Josephson junction.

Abstract: A method of producing a microcrystalline RBa.sub.2 Cu.sub.3 O.sub.y structure where R denotes a lanthanide chosen from Y, La, Nd, Sm, Eu, Gd, Tb, Ho, Er, Tm, Yb and Lu and where y has a value between 6.9 and 7 starts with a powder of composition [x(123) ; (1-x) (7BaO--18CuO] where (123) denotes the 123 phase of RBaB.sub.2 Cu.sub.3 O.sub.y and where the value of x is between 0.01 and 1. The powder is compressed and sintered at a temperature below 920.degree. C. (the BaCuO.sub.2 and CuO binary eutectic temperature) to form a sample. The sample is placed on an oxide of the lanthanide R. The sample and its support undergo heat treatment enabling chemical reaction between the liquid part of the sample and its support whereby substantially all of the liquid part is consumed and highly regular 123 monocrystals are obtained. Cooling is applied. At least one annealing is carried out in pure oxygen at a temperature between 350.degree. C. and 500.degree. C. to obtain the orthorhombic form characteristic of RBa.sub.2 Cu.

Abstract: A thin film, high T.sub.c fluorinated, superconducting having a lattice structure differing from the lattice structure of the material substrate, such as sapphire or stainless steel, upon which it is grown. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducting material on the substrate. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities.

Abstract: The invention relates to a structured superconductive track and a process for making it from epitaxial high temperature superconductor (HTSC) layers using lift off technique, in which a HTSC track deposited on an elevated substrate region is surrounded by an insulating layer of doped HTSC lying on a lower substrate region, and the substrate region with the superconductive track formed thereon is elevated such that the superconductive track is isolated from the insulating layer.

Abstract: A superconducting device has a superconducting channel formed of an oxide superconductor on the principal surface of a substrate. A source electrode and a drain electrode likewise formed of oxide superconductor, are electrically connected by the channel to provide for superconducting current flow. A superconducting gate electrode is isolated by a side insulating region which completely covers each of opposite side surfaces of the gate electrode. The relative thicknesses of both the source and drain electrodes are much greater than that of the channel thickness. The superconducting channel and the gate insulator are both formed by one oxide thin film, and in a preferred embodiment, the gate electrode likewise is provided by the same film which forms the gate insulator and channel.

Abstract: An oxide superconductor thin film of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta. with a smooth surface having a low density of particles being generated without decreasing superconductivity is produced by the steps of applying a pulsed laser beam to the target formed of an oxide material having an apparent density of 95% or more, substantially composed of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta., which is obtained from a molded body of an amorphous powder by subjecting it to partial melting, followed by gradual cooling, depositing and accumulating an irradiated and evaporated oxide material of the target on a substrate.

Abstract: A method of pulling a crystal of a metal oxide is disclosed, in which the growth of the crystal is performed in a liquid phase having a composition which is different from the metal oxide and which contains components constituting the metal oxide. The liquid phase is in contact with a solid phase located at a position separated from the position at which the crystal of the metal oxide grows. The solid phase has a composition different from that of the metal oxide and supplies components constituting the metal oxide to the liquid phase.

Abstract: A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.