From Organometallic Precursors (e.g., Acetylacetonates) Patents (Class 505/734)

Cross-Reference Art Collections

By sol-gel process (Class 505/735)
  • Patent number: 8658571
    Abstract: The invention relates to a method for the wet chemical production of an HTSL on a carrier, wherein an HTSL precursor solution comprising no trifluoroacetate may be utilized if the same is heated to a temperature Ts during the heat treatment of the HTSL precursor, wherein the remaining substances of the HTSL precursor solution form at least a partial melt, which is below the temperature at which RE2BaCuOx is formed, and which is deposited from the liquid phase while forming a peritectic.
    Type: Grant
    Filed: March 18, 2010
    Date of Patent: February 25, 2014
    Assignee: BASF SE
    Inventors: Isabel van Driessche, Pieter Vermeir, Serge Hoste, Michael Baecker
  • Patent number: 8361931
    Abstract: A method for preparing yttrium barium copper oxide (“YBCO”; “Y-123”; YBa2Cu3O7-x) superconducting nanoparticles is disclosed. The YBCO superconducting nanoparticles are prepared via a solid-state reaction by a solid-state reaction of an yttrium precursor, a barium precursor, and a copper precursor. One or more of the precursors are metal chelate compounds having acetylacetone ligands, which are highly stable and have a high compatibility with the other precursors.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: January 29, 2013
    Inventors: Masoud Salavati-Niasari, Sima Alikhanzadeh-Arani
  • Patent number: 7939126
    Abstract: Superconductor precursor solutions are disclosed. The precursor solutions contain, for example, a salt of a rare earth metal, a salt of an alkaline earth metal and a salt of a transition metal. The precursor solutions can optionally include a Lewis base. The precursor solutions can be processed relatively quickly to provide a relatively thick and good quality intermediate of a rare earth metal-alkaline earth metal-transition metal oxide.
    Type: Grant
    Filed: February 5, 2008
    Date of Patent: May 10, 2011
    Assignee: American Superconductor Corporation
    Inventors: Martin W. Rupich, Thomas A. Kodenkandath
  • Patent number: 7307046
    Abstract: To provide a composition for a thick oxide superconducting film containing a copper salt of a branched saturated aliphatic carboxylic acid having 6 or more carbon atoms and/or a copper salt of an alicyclic carboxylic acid having 6 or more carbon atoms, which is suitable for producing thick copper based oxide superconducting films by the MOD process and which can be subjected to film formation with uniformity at a high speed, and an oxide superconductor in the form of a thick film tape which is subjected to film formation with uniformity at a high speed using the subject composition for a thick oxide superconducting film.
    Type: Grant
    Filed: November 7, 2003
    Date of Patent: December 11, 2007
    Assignees: International Superconductivity Technology Center, The Juridical Foundation, Adeka Corporation, SWCC Showa Cable Systems Co., Ltd.
    Inventors: Honjo Tetsuji, Tokunaga Yoshitaka, Izumi Teruo, Shiohara Yuh, Goto Tomotaka, Yoshinaka Atsuya, Yajima Akimasa
  • Patent number: 6774088
    Abstract: A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: August 10, 2004
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Takaaki Manabe, Iwao Yamaguchi, Tetsuo Tsuchiya, Toshiya Kumagai, Susumu Mizuta, Susumu Nakamura
  • Publication number: 20030198748
    Abstract: An aqueous solution of mixed metal acetate including one kind or more of element selected from lanthanide series and yttrium, barium and copper is mixed with trifluoroacetic acid to prepare a solution of mixed metal trifluoroacetate. From a solution of mixed metal trifluoroacetate obtained thus, purified mixed metal trifluoroacetate of which total content of water and acetic acid is 2% by weight or less is prepared. With purified mixed metal trifluoroacetate, an oxide superconductor of excellent performance may be prepared.
    Type: Application
    Filed: May 20, 2003
    Publication date: October 23, 2003
    Applicants: Kabushiki Kaisha Toshiba, International Superconductivity Technology Center, Spark Plug Co., Ltd.
    Inventors: Takeshi Araki, Katsuya Yamagiwa, Izumi Hirabayashi
  • Publication number: 20020115307
    Abstract: A method for manufacturing a ferroelectric thin film using a sol-gel process comprising the steps of dissolving a Pb precursor using a solvent to prepare a Pb solution and stabilizing a Zr precursor and a Ti precursor to prepare a Zr solution and a Ti solution, respectively, mixing the Zr solution and Ti solution, stirring the Ti-Zr mixed solution with the Pb solution and hydrolyzing to prepare a ferroelectric solution, and forming a ferroelectric thin film on a substrate using the ferroelectric solution.
    Type: Application
    Filed: December 28, 2001
    Publication date: August 22, 2002
    Inventors: Yong-Kyun Lee, June-Key Lee
  • Patent number: 5942376
    Abstract: Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
    Type: Grant
    Filed: August 14, 1997
    Date of Patent: August 24, 1999
    Assignees: Symetrix Corporation, Mitsubishi Materials Corporation
    Inventors: Hiroto Uchida, Nobuyuki Soyama, Kensuke Kageyama, Katsumi Ogi, Michael C. Scott, Larry D. McMillan, Carlos A. Paz de Araujo
  • Patent number: 5686151
    Abstract: Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
    Type: Grant
    Filed: February 20, 1996
    Date of Patent: November 11, 1997
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keitaro Imai, Masahiro Kiyotoshi, Haruo Okano
  • Patent number: 5665682
    Abstract: An oxide superconductor capable of realizing a high critical current density and its manufacturing method requiring only a low temperature heat treatment. An oxide superconductor has a superconductive layer with a composition of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x, where RE stands for any one of rare earth elements including Y, Eu, Gd, Dy, Ho, Er, and Yb, which is formed on the substrate by RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-x phase and CuO phase resulting from a decomposition of RE.sub.1 Ba.sub.2 Cu.sub.4 O.sub.8 phase, in which the CuO phase and micro-defects caused by the decomposition function as pinning centers. This superconductive layer is formed by applying a solution containing organic compounds of a plurality of metallic elements for constituting the oxide superconductive layer; calcining the substrate applied with the solution to obtain a calcined body in which the organic compounds contained in the solution are thermally decomposed; heating the calcined body to produce RE.sub.1 Ba.sub.2 Cu.sub.
    Type: Grant
    Filed: August 14, 1995
    Date of Patent: September 9, 1997
    Assignees: International Superconductivity Technology Center, The Kansai Electric Power Co., Inc., Fujikura Ltd.
    Inventors: Osamu Okamura, Atsushi Kume, Yuh Shiohara
  • Patent number: 5482918
    Abstract: A method for producing microcomposite powders for use in superconducting and non-superconducting applications.
    Type: Grant
    Filed: February 7, 1994
    Date of Patent: January 9, 1996
    Assignee: The United States of America as represented by the Secretary of the Interior
    Inventors: Michael A. Maginnis, David A. Robinson
  • Patent number: 5480862
    Abstract: Method for the preparation of a precursor for a superconductor, comprising the addition of a condensation product to an aqueous solution of metal salts, the total or partial removal of water from the mixture thus obtained, the subsequent processing of the viscous mass obtained after having removed part of the water or the calcination of the solid gel obtained after having substantially removed all the water, wherein the condensation product is a product of esterification of citric acid with ethylene glycol prepared separately and the solution of metal salts substantially is a solution of acetates in water and acetic acid.
    Type: Grant
    Filed: July 30, 1993
    Date of Patent: January 2, 1996
    Assignee: Pirelli Cavi S.p.A.
    Inventor: Giorgio S. Miszenti
  • Patent number: 5455223
    Abstract: In one aspect, the present invention is a precursor powder to an oxide superconductor, namely a coated particle comprising a metal oxide particle core (including a mixed metal oxide, e.g., BSCCO-2212 or YBCO-123) on which is deposited a secondary metal oxide coating (e.g., M.sub.n CuO.sub.x or CuO). The metal oxide particle and secondary metal oxide coating together comprise metallic elements having a stoichiometry appropriate for the formation of a desired oxide superconductor. The metal oxide reacts with the secondary metal oxide under suitable conditions (e.g., heating) to form the desired oxide superconductor (e.g., BSCCO-2223 or YBCO-124). In another aspect, the invention is a method for preparing such a coated particle, comprising: preparing a precursor solution comprising a metal .mu.
    Type: Grant
    Filed: February 24, 1993
    Date of Patent: October 3, 1995
    Assignee: American Superconductor Corporation
    Inventors: Martin Rupich, Gilbert N. Riley, Jr., William L. Carter
  • Patent number: 5451434
    Abstract: Alkaline earth metal heptane dionates which have uniform evaporation properties in a vacuum and are therefore highly suitable for use in CVD synthesis for depositing layers containing alkaline earth metal useful in fields such as the production of high temperature superconductors.
    Type: Grant
    Filed: November 29, 1993
    Date of Patent: September 19, 1995
    Assignee: Solvay Barium Strontium GmbH
    Inventor: Guenther Doellein
  • Patent number: 5449660
    Abstract: A method of producing a compound oxide of elements including at least one of thallium, bismuth, lead, antimony, yttrium, each of rare earth elements, each of transition metal elements, each of alkali metal elements and each of alkaline earth metal elements. The method is comprised of the steps of (i) reacting at least one of carbonate, basic carbonate, hydroxide and co-precipitates of each of the above-mentioned elements with an amount of citric acid that is less than the weight equivalent of citric acid needed to form a completely citrated compound, and (ii) calcining the partly citrated compound. The co-precipitate can be one of a carbonate, a basic carbonate and a hydroxide of each of the above-mentioned elements.
    Type: Grant
    Filed: March 16, 1993
    Date of Patent: September 12, 1995
    Assignees: Nissan Motor Co., Ltd., Seimi Chemical Company, Limited
    Inventors: Fumio Munakata, Mitsugu Yamanaka, Susumu Hiyama
  • Patent number: 5447909
    Abstract: A superconducting thin oxide film is formed by the steps of mixing a gas of the organometal compound of the alkali earth metal, a gas of at least one organometal compound of the element of the group IIIa and/or a halogenide thereof, and a gas of at least one organometal compound of a transition metal and/or a halogenide thereof, with an inert gas, to produce a gas mixture; mixing an oxygen-containing gas to said gas mixture to produce a gas mixture having a predetermined oxygen partial pressure; and thermally decomposing said gas mixture having the predetermined oxygen partial pressure on a substrate to form a thin film of a complex oxide on said substrate.
    Type: Grant
    Filed: September 9, 1991
    Date of Patent: September 5, 1995
    Assignee: Kawasaki Steel Corporation
    Inventors: Makoto Takahashi, Hiroshi Umino
  • Patent number: 5416063
    Abstract: Disclosed is a method for forming a superconductive oxide layer on a substrate. The method comprises applying a precursor solution to a major surface of the substrate such that a metal-containing layer is formed on the surface, and heat treating the substrate/layer combination such that at least a substantial portion of the layer material is transformed into superconductive oxide. Exemplarily, the precursor solution is formed by dissolving Ba--, Y--, and Cu-containing compounds in acetic acid and water, spinning the solution on a MgO substrate, driving of unwanted constituents of the resulting layer at 400.degree. C., heating the combination to about 830.degree. C. in O.sub.2 such that the (perovskite) phase that is associated with superconductivity in YBa.sub.2 Cu.sub.3 O.sub.7 is formed, and oxygenating the layer at about 400.degree. C. in O.sub.2.
    Type: Grant
    Filed: November 30, 1987
    Date of Patent: May 16, 1995
    Assignee: AT&T Corp.
    Inventors: Michal E. Gross, Catherine E. Rice
  • Patent number: 5350453
    Abstract: In the device for producing thin films of metal oxides from organic metal compounds on a substrate, there is a truncated pyramidal hollow body (3) in an evacuable housing (1). Disposed concentrically with respect to the axis of symmetry (16) of the hollow body (3) in its base (7) are at least three furnaces (8) which have reception devices (9) for the metal compounds (10) to be evaporated. The reception devices (9) are provided with guide pipes (11) which project into the hollow interior of the hollow body (3) and are inclined towards its axis of symmetry (16). The casing (12) of the truncated pyramid merges into a pipe (13) above whose end there is disposed a heatable reception device (5) for the substrate (4). A gas feed pipe (6) terminates in the hollow interior [sic] of the hollow body (3) between the guide pipes (11) and the end of the pipe (13).
    Type: Grant
    Filed: September 23, 1992
    Date of Patent: September 27, 1994
    Assignee: Hoechst Aktiengesellschaft
    Inventor: Ernst-Gunther Schlosser
  • Patent number: 5330966
    Abstract: An oxide superconducting layer is formed on a base material of silver, whose single side is coated with MgO, or single-crystalline MgO for depositing a Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 phase in a crystallographically oriented state by sputtering, CVD or laser ablation. Metal lead or lead oxide is then laid thereon by sputtering to obtain a two-layer structure, and the two-layer structure is heat treated in the atmospheric air. Thus, a bismuth oxide superconducting film, which is excellent in crystal orientation as well as denseness and thereby having high critical current density, is formed on the base material.
    Type: Grant
    Filed: June 26, 1992
    Date of Patent: July 19, 1994
    Assignees: Sumitomo Electric Industries, Inc., The Kansai Electric Power Co., Inc.
    Inventors: Noriki Hayashi, Satoshi Takano
  • Patent number: 5322818
    Abstract: A method for forming an oxide superconducting material by preparing first a shaped magnetic shield comprising an oxide superconductor as a matrix, and then effecting CVD and further EVD to fill in the pores of the matrix with an oxide superconductor; more specifically, it comprises introducing an oxidizing gas to said shaped magnetic shield from either inside or outside the shaped magnetic shield while introducing a material gas of said oxide superconductor from the other side thereof, and then maintaining said shaped magnetic shield at this state under a high temperature.
    Type: Grant
    Filed: March 8, 1993
    Date of Patent: June 21, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisashi Ohtani
  • Patent number: 5316579
    Abstract: A method and apparatus are disclosed for generating fine mists of liquids using a rotating turbine blade disposed within an enclosure. A mixture of a liquid and a carrier gas are flowed into the enclosure such that it immediately impacts on the rotating turbine blade disposed near a lower end of the enclosure, and the resulting mist is withdrawn under vacuum near an upper end of the enclosure. A method and apparatus are also disclosed for chemical vapor deposition of thin films of complex chemical compounds using the discussed mists.
    Type: Grant
    Filed: May 4, 1992
    Date of Patent: May 31, 1994
    Assignee: Symetrix Corporation
    Inventors: Larry D. McMillan, Carlos A. Paz de Araujo, Tom L. Roberts
  • Patent number: 5314866
    Abstract: A CVD process for forming a layer or layers of superconducting materials on a semiconductor substrate in which volatile organometallic compounds of bismuth, strontium, calcium and copper are heated in the presence of a carrier gas in a first chamber free of hydrolyzing agents. Under conditions free of hydrolyzing agents, the carrier gas transports a predetermined quantity of the volatile organometallic compounds of the bismuth, strontium, calcium and copper to a deposition chamber. The compounds are decomposed and deposit mixed oxides on the substrate. Subsequent to deposition of the mixed oxides of the desired elements the layer is sintered in an oxygen-rich atmosphere, and formed into a superconducting film by subsequent slow cooling still in an oxygen-rich atmosphere.
    Type: Grant
    Filed: May 16, 1989
    Date of Patent: May 24, 1994
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Alan D. Berry, David K. Gaskill, Ronald T. Holm, Edward J. Cukauskas, Raphael Kaplan, Richard L. Henry
  • Patent number: 5304536
    Abstract: An improved process for preparing a superconducting composition having the formula M.sub.W A.sub.E Cu.sub.V O.sub.K wherein M is selected from the group consisting of Bi, Tl, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm Yb and Lu; A is at least one alkaline earth metal selected from the group consisting of Ba, Ca and Sr; x is at least 6; w is at least 1; z is at least 2 and v is at least 1; said composition having a superconducting transition temperature of above 77K, preferably above about 90 K; said process consisting essentially of (a) forming a suspension having an M:A:Cu atomic ratio of w:z:v by mixing A(OH).sub.2, AO or AO.sub.2 and M.sub.2 O.sub.3 with an aqueous solution of cupric carboxylate or cupric nitrate at a temperature from about 50.degree. C. to about 100.degree. C., or mixing A(OH).sub.2 with an aqueous solution of Cu carboxylate, nitrate or a mixture thereof and M carboxylate, nitrate or a mixture thereof at a temperature from about 50.degree. C. to about 100.degree. C.
    Type: Grant
    Filed: July 9, 1991
    Date of Patent: April 19, 1994
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: Harold S. Horowitz
  • Patent number: 5304533
    Abstract: A process for producing a superconductor of an oxide system, which comprises uniformly mixing metal elements for constituting the oxide system at least partly in the form of alkoxides having CN.sup.--, X.sup.-- wherein A is a halogen atom and/or an amine, with the rest, if any, being in the form of acetylacetonates, carboxylates and/or water-soluble inorganic compounds to obtain a homogeneous mixture, and sintering the mixture.
    Type: Grant
    Filed: August 24, 1988
    Date of Patent: April 19, 1994
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Toshio Kobayashi, Fusaoki Uchikawa, Kenji Nomura, Fumio Fujiwara, Sigeru Matsuno, Masao Morita, Shouichi Yokoyama
  • Patent number: 5296460
    Abstract: Films of high T.sub.c Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C.sub.6 H.sub.5).sub.3, deposited on a heated substrate to form a film, and annealed.
    Type: Grant
    Filed: August 5, 1992
    Date of Patent: March 22, 1994
    Assignee: Northwestern University
    Inventors: Bruce W. Wessels, Tobin J. Marks, Darrin S. Richeson, Lauren M. Tonge, Jiming Zhang
  • Patent number: 5284824
    Abstract: A method for manufacturing an oxide superconductor film is disclosed, which comprises the steps of: preparing a substrate; depositing an oxide superconductor film on said substrate by chemical vapor deposition (CVD); and supplying excited oxygen to or near a film deposition site on said substrate during the deposition of said film.
    Type: Grant
    Filed: June 23, 1992
    Date of Patent: February 8, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Etsuo Noda, Setsuo Suzuki, Osami Morimiya, Kazuo Hayashi
  • Patent number: 5280012
    Abstract: This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.
    Type: Grant
    Filed: July 22, 1992
    Date of Patent: January 18, 1994
    Assignee: Advanced Technology Materials Inc.
    Inventors: Peter S. Kirlin, Duncan W. Brown, Robin A. Gardiner
  • Patent number: 5278138
    Abstract: A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed.
    Type: Grant
    Filed: October 11, 1991
    Date of Patent: January 11, 1994
    Inventors: Kevin C. Ott, Toivo T. Kodas
  • Patent number: 5276012
    Abstract: A method is disclosed of forming an oxide superconducting film comprising the steps of (1) mixing (a) the vapors of organic metal materials in such proportions as to provide a predetermined metal composition, or (b) said organic metal materials in such proportions as to provide a predetermined metal composition vaporizing and mixture, and (2) bringing the mixture into contact with a heated substrate so that an oxide superconducting film is formed on said substrate by a chemical vapor deposition process, wherein laser light is applied onto said substrate during formation of said oxide superconducting film on said substrate, whereby the crystallographic orientation of said oxide superconducting film being formed in the irradiated area of said substrate is such that the c-axis is parallel to the substrate.
    Type: Grant
    Filed: February 11, 1992
    Date of Patent: January 4, 1994
    Assignees: NGK Spark Plug Co., Ltd., International Superconductivity Technology Center, Hitachi Ltd.
    Inventors: Takahisa Ushida, Kazutoshi Higashiyama, Izumi Hirabayashi, Shoji Tanaka
  • Patent number: 5262392
    Abstract: A method for patterning precursor film, a product thereof, a method for preparing a patterned ceramic film and a processing workpiece. The method for patterning precursor film includes the steps of depositing a blocking layer over the precursor film, patterning the overlaid blocking layer to uncover portions of the precursor film, irradiating the patterned blocking layer and uncovered portions of the precursor film with a beam sufficiently energetic to radiation modify the full thickness of unmasked portions of the precursor film and insufficiently energetic to radiation modify portions of the precursor film covered by the blocking layer, and developing the precursor film. The blocking layer has a lesser thickness than the precursor film, but is sufficiently thick to block an irradiating beam having the minimal energy necessary to radiation modify the full thickness of the precursor layer.
    Type: Grant
    Filed: July 15, 1991
    Date of Patent: November 16, 1993
    Assignee: Eastman Kodak Company
    Inventors: Liang-Sun Hung, Longru Zheng, Yann Hung
  • Patent number: 5262396
    Abstract: A method for forming a superconducting oxide material including introducing an oxygen or an oxidizing gas and a reactive gas or reactive solution or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber; supplying microwaves to the plasma generating chamber wherein the direction of the magnetic field and the propagation direction of the microwaves are parallel such that the oxygen or the oxidizing gas and the reactive gas or reactive solution or reactive minute particles are converting into the plasma; and forming the superconducting oxide material on a film forming surface positioned in the plasma generating chamber during the application of the magnetic field.
    Type: Grant
    Filed: May 13, 1992
    Date of Patent: November 16, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5260263
    Abstract: A superconductive ceramic wire material composed of rare earth elements, alkali earth metals, copper, and oxygen, which is obtained by mixing a powder containing oxides of the component elements of the superconductive ceramic with a solution containing organic compounds of the component elements, forming the mixture into a wire, and firing the wire in a temperature range from 850.degree. to 949.degree. C. in an oxygen-containing atmosphere.
    Type: Grant
    Filed: June 8, 1989
    Date of Patent: November 9, 1993
    Assignee: Ibiden Co., Ltd.
    Inventors: Ryo Enomoto, Yoshimi Matsuno, Masanori Tamaki
  • Patent number: 5254530
    Abstract: A Bi-Sr-Ca-Cu-O-type superconductive film is formed on an MgO (100) single crystal substrate by the chemical vapor deposition method at a film formation speed of 780.degree. C. or less and a film formation speed of 1.0 nm/min or more, and exhibits an a-axis or b-axis preferential growth with respect to the substrate surface.
    Type: Grant
    Filed: June 18, 1992
    Date of Patent: October 19, 1993
    Assignees: International Superconductivity Technology Center, Ube Industries, Ltd., Sharp Corporatoin, Fujikura Ltd.
    Inventors: Tsunemi Sugimoto, Kazushi Sugawara, Mikio Nakagawa, Yuh Shiohara
  • Patent number: 5252314
    Abstract: Guanidine oxalate is used as a precipitating agent in the coprecipitation of multicomponent oxide powder precursors. A solution of a soluble inorganic salt is combined with a solution of guanidine oxalate. A resultant metal oxalate is precipitated from the solution and can thereafter be subjected to heat to convert the metal oxalate into a multicomponent ceramic powder.
    Type: Grant
    Filed: November 30, 1990
    Date of Patent: October 12, 1993
    Assignee: Case Western Reserve University
    Inventors: Mark R. DeGuire, Warren H. Philipp
  • Patent number: 5232909
    Abstract: A superconducting ceramics elongated body comprising a flexible ceramics elongated substrate and an oxide ceramics superconducting layer formed at least on a part of the surface of the ceramics elongated substrate to longitudinally extend along the ceramics elongated substrate. The superconducting ceramics elongated body further comprises a protective layer of ceramics containing a nitride, which is provided to at least cover the surface of the superconducting layer exposed on the ceramics elongated substrate. A method of manufacturing a superconducting ceramics elongated body by forming a longitudinally continuous superconducting layer on at least a part of the surface of a flexible ceramics elongated substrate. The superconducting layer is formed on the elongated substrate by a sol-gel method, a coating/sintering method, evaporation under oxygen ions, deposition from a fluoride solution or oxidation after application of corresponding fluorides.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: August 3, 1993
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Satoshi Takano, Kenichi Takahashi, Kenji Miyazaki, Noriyuki Yoshida, Shinji Inazawa, Noriki Hayashi
  • Patent number: 5231074
    Abstract: Highly-textured superconductor oxide thin films are prepared on substrates, including lattice matched, non-lattice matThe Government has rights in this invention pursuant to contract Number MDA972-88-K0006 awarded by the U.S. Defense Advance Research Project Agency.
    Type: Grant
    Filed: April 17, 1990
    Date of Patent: July 27, 1993
    Assignee: Massachusetts Institute of Technology
    Inventors: Michael J. Cima, Paul McIntyre
  • Patent number: 5229359
    Abstract: Solutions containing the cations of the metals Y, Ba, Cu in the atomic ratio 1:2:3 or the cations of the metals Bi, Sr, Ca and Cu having the atomic ratios of a high-temperature superconductor bound to polyacrylic acid in water as dispersant and having a viscosity of 150-10,000 cSt (at 20.degree. C.) serve to produce superconducting filaments or coatings.To produce a superconducting filament, a solution is forced through a nozzle and the extruded filamentous strand is left to solidify in an organic solvent which is miscible with water, the filament is isolated, dried and heated to at least 800.degree. C. in the presence of oxygen, annealed at at least 800.degree. C. for at least one hour in the presence of oxygen and then cooled.
    Type: Grant
    Filed: May 3, 1991
    Date of Patent: July 20, 1993
    Assignee: Hoechst Aktiengesellschaft
    Inventor: Winfried Becker
  • Patent number: 5225396
    Abstract: A method for forming an oxide superconducting film is disclosed. A substrate member comprising an oxygen ion conductor and a material provided thereon having oxygen permeability and good fitting of lattice constant to the oxide superconducting film is prepared, and then an oxide superconducting film is formed on the substrate member. During the formation of the superconducting film, electric current is made to flow through the substrate member, whereby oxygen is supplied to the superconducting film.
    Type: Grant
    Filed: July 24, 1991
    Date of Patent: July 6, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Hisashi Ohtani
  • Patent number: 5204313
    Abstract: A process of forming on a gold, silver or platinum metal surface of a substrate a superconductive crystalline mixed metal oxide thin film exhibiting superconductivity at a temperature in excess of 85.degree. K. A precursor of the superconductive thin film containing bismuth, strontium, calcium and copper is formed on the substrate surface and then thermally converted in the presence of oxygen to the superconductive thin film. Lead is added to the thin film precursor to raise the superconductivity of the completed thin film above 85.degree. K.
    Type: Grant
    Filed: October 10, 1999
    Date of Patent: April 20, 1993
    Assignee: Eastman Kodak Company
    Inventors: Mark Lelental, Henry J. Romanofsky
  • Patent number: 5204314
    Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comGOVERNMENT RIGHTS IN INVENTIONThis invention was made with Government support under Contract No. N00014 88-0531 awarded by the Defense Advanced Projects Research Administration (DARPA). The Government has certain rights in this invention.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: April 20, 1993
    Assignee: Advanced Technology Materials, Inc.
    Inventors: Peter S. Kirlin, Robin L. Binder, Robin A. Gardiner
  • Patent number: 5200388
    Abstract: An oxide superconducting film is formed by CVD. The starting material gas sources are Ba(DPM).sub.2, Ba(DPM).sub.2 .multidot.(THF).sub.n or Ba(DPM).sub.2 .multidot.(DMF).sub.n ; Cu(DPM).sub.2, Cu(DPM).sub.2 .multidot.(THF).sub.n or Cu(DPM).sub.2 .multidot.(DMF).sub.n ; and M(DPM).sub.3, M(DPM).sub.3 .multidot.(THF).sub.n or M(DPM).sub.3 .multidot.(DMF).sub.n, whereDPM is 2,2,6,6-tetramethyl-3,5-heptaneodianate represented by the chemical formula:CH.sub.3 C(CH.sub.3).sub.2 COCHCOC(CH.sub.3).sub.2 CH.sub.3THF is tetrahydrofuran represented by the chemical formula: ##STR1## DMF is dimethylformamide represented by the chemical formula:HCON(CH.sub.3).sub.2M is an element chosen from the list:Y, La, Nd, Pm, Sm, Eu, Er, Gd, Tb, Dy, Ho, Tm, Yb and Lu,and n is any integer. The starting gas sources are introduced into a growth tank after gasification together with at least one of the gases O.sub.2, O.sub.3, or N.sub.2 O, and the oxide film being formed on a substrate placed in said growth tank.
    Type: Grant
    Filed: June 22, 1990
    Date of Patent: April 6, 1993
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Hitoshi Abe, Tomohiro Nakamori
  • Patent number: 5198411
    Abstract: A method and apparatus are disclosed for chemically vapor depositing a thin film of an oxide based superconductor on a substrate, which is preferably a substrate comprising superconducting material. Gaseous forms of the respective reactants are first formed and then reacted together in a reaction zone adjacent a spinning substrate. In a preferred embodiment, the reactants are exposed to UV light during the reaction to catalyze the reaction.
    Type: Grant
    Filed: December 2, 1988
    Date of Patent: March 30, 1993
    Assignee: Hewlett-Packard Company
    Inventors: Ronald Hiskes, Martha L. Narbut
  • Patent number: 5198412
    Abstract: A process is disclosed for producing superconductor films on a variety of substrates, and more particularly a patterned superconductor film on a planar substrate. The basic process includes the steps of: 1) depositing a metal film of superconductor precursor elements on a substrate; 2) patterning the metal film; and 3) oxidizing the metal film to form a superconductor film. Because the process separates the metal precursor film formation, patterning, and oxidation steps, each of the steps can be individually optimized.
    Type: Grant
    Filed: December 13, 1991
    Date of Patent: March 30, 1993
    Assignee: Hewlett-Packard Company
    Inventors: V. K. Nagesh, John T. Anderson
  • Patent number: 5190913
    Abstract: An apparatus for producing a superconducting oxide film with stable properties by metal organic chemical vapor deposition, suitable for mass production, is provided with a gas analyzer comprising a differential pressure meter 38 between a raw material gas collector tube 35 provided in a transfer line 8 for leading a raw material gas to a film forming chamber 10 and a bypass line 37, a dilution gas line 49 interlocked with the differential pressure meter 38 and for leading a dilution gas to the raw material gas collector tube 35, a gas separation column 42 branched from the bypass line, a gas detector 31 connected to the gas separation column 42, flow rate controllers 50 for carrier gases 43 and 45 and a thermostat 13 for heating all the lines.
    Type: Grant
    Filed: March 25, 1992
    Date of Patent: March 2, 1993
    Assignees: Hitachi, Ltd., NGK Spark Plug Co., Ltd., International Superconductivity Technology Center
    Inventors: Kazutoshi Higashiyama, Takahisa Ushida, Izumi Hirabayashi, Shoji Tanaka
  • Patent number: 5185317
    Abstract: A method of forming a superconducting Tl-Ba-Ca-Cu-O film is disclosed, which comprises depositing a Ba-Ca-Cu-O film on a substrate by MOCVD, annealing the deposited film and heat-treating the annealed film in a closed circular vessel with TlBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x and cooling to form said superconducting film of TlO.sub.m Ba.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.2n+2, wherein m=1,2 and n=1,2,3.
    Type: Grant
    Filed: April 25, 1991
    Date of Patent: February 9, 1993
    Assignee: Northwestern University
    Inventors: Bruce W. Wessels, Tobin J. Marks, Darrin S. Richeson, Lauren M. Tonge, Jiming Zhang
  • Patent number: 5173474
    Abstract: An HTSC material epitaxially deposited on a YSZ buffer layer on a surface of a monocrystalline silicon substrate has a zero resistance transition temperature of at least 85.degree. K., a transition width (10-90%) of no more than 1.0.degree. K., a resistivity at 300.degree. K. of no more than 300 micro-ohms-centimeter and a resistivity ratio (at 300.degree. K./100.degree. K.) of 3.0.+-.0.2. The surface of the silicon substrate is cleaned using a spin-etch process to produce an atomically clean surface terminated with an atomic layer of an element such as hydrogen with does not react with silicon. The substrate can be moved to a deposition chamber without contamination. The hydrogen is evaporated in the chamber, and then YSZ is epitaxially deposited preferably by laser ablation. Thereafter, the HTSC material, such as YBCO, is epitaxially deposited preferably by laser ablation. The structure is then cooled in an atmosphere of oxygen.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: December 22, 1992
    Assignees: Xerox Corporation, President and Board of Trustees of Santa Clara College, Board of Trustees of the Leland Stanford Junior University
    Inventors: George A. N. Connell, David B. Fenner, James B. Boyce, David K. Fork
  • Patent number: 5171735
    Abstract: A method for forming a high T.sub.c metal oxide superconductor in the form of a hollow fiber. The method includes the steps of: forming a polymer-metal complex precursor; filling a decomposable hollow fiber mold with the precursor; and heating the filled mold to decompose the mold and convert the precursor to a metal oxide superconductor in the form of a hollow fiber. Ag-doped metal oxide superconductor structures can also be produced by the above method.
    Type: Grant
    Filed: November 17, 1989
    Date of Patent: December 15, 1992
    Assignee: Academy of Applied Science
    Inventor: James C. W. Chien
  • Patent number: 5166130
    Abstract: A superconductive ceramic wire or film comprises 100 parts by weight of superconductive oxide crystal composed of a rare earth element, an alkaline earth metal, copper, and oxygen, and 0.2-5.0 parts by weight of copper oxide, thereof.
    Type: Grant
    Filed: June 30, 1988
    Date of Patent: November 24, 1992
    Assignee: Ibiden Co. Ltd.
    Inventors: Ryo Enomoto, Yoshimi Matsuno
  • Patent number: 5164363
    Abstract: A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.
    Type: Grant
    Filed: May 15, 1991
    Date of Patent: November 17, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Eguchi, Takatosi Nakanisi, Rie Satoh
  • Patent number: 5162296
    Abstract: A method for forming a superconducting oxide material including introducing oxygen or an oxidizing gas and a reactive gas or reactive minute particles into a plasma generating chamber; applying a magnetic field to the plasma generating chamber; supplying microwaves to the plasma generating chamber where the direction of the magnetic field and the propagation direction of the microwave are parallel such that the oxygen or the oxidizing gas and the reactive gas or reactive minute particles are converting into plasma; and the formation of a superconducting oxide material on a film forming surface positioned in the plasma generating chamber during application of the magnetic field.
    Type: Grant
    Filed: June 8, 1990
    Date of Patent: November 10, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki