Abstract: A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.

Abstract: Method of producing superconducting cables by using cold plastic deformation operations only including the step of obtaining a bar-like semi-finished product of prefixed dimension through the steps of: forming round-section, mono- or multifilament, superconducting copper bars of relatively long length; assembling the bars about a cylindrical copper core of substantially the same length, using assembly templates, the templates having through holes arranged in a circle to support the bars, and a central through seat for supporting the core; tying the bars onto an outer lateral surface of the core; sliding onto one end of the bar/core assembly a number of metal supporting rings, while sliding the templates off the opposite end thereof; sliding a copper tube onto the bar/core assembly while cutting the ties in axial sequence and sliding off the supporting rings; and subjecting the assembly to a number of drawing operations.

Abstract: An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being separated from adjacent zones by a wall. The zones include at least two deposition zones, where each deposition zone is configured and arranged to deposit a deposition material on the at least one substrate, and at least one reaction zone for reacting the deposition material with a reactant. The apparatus is configured and arranged to rotate the at least one substrate sequentially through the plurality of zones to form a thin film on the substrate. In some embodiments of the apparatus, the deposition/reaction vessel includes a same number of deposition zones and reaction zones which may be alternating deposition and reaction zones.

Abstract: An improved method and apparatus for producing flexible fibers (30) of superconducting material includes a crucible (12) for containing a charge of the superconducting material. The material is melted in the crucible (12) and falls in a stream (18) through a bottom hole (16) in the crucible (12). The stream (18) falls through a protecting collar (22) which maintains the stream (18) at high temperatures. The stream (18) is then supplied through a downwardly directed nozzle (26) where it is subjected to a high velocity of a heated gas (36') which breaks the melted superconducting material into ligaments which solidify into the flexible fibers (30). The fibers (30) are collected by directing them against a collection filter (32).

Abstract: A system and method for mechanically forming a ceramic superconductor product. A system for making the ceramic superconductor includes a metallic channel portion having a cross section for receiving a ceramic superconductor powder, a roll to mechanically reduce the channel cross section and included superconductor powder and a cap portion welded to the channel portion using a localized high energy source. The assembled bar is then mechanically reduced to form a tape or wire end product.

Abstract: This invention relates to strontium titanate, hereinafter referred to as SrTiO.sub.3, films of the type produced by chemical vapor deposition (CVD) that are oriented so that the film's (100) face is parallel to the surface plane of the substrate. Such structures of this type, generally allow the SrTiO.sub.3 film to be deposited such that a high density capacitor or a buffer layer for a superconductor can be created.

Abstract: In the device for producing thin films of metal oxides from organic metal compounds on a substrate, there is a truncated pyramidal hollow body (3) in an evacuable housing (1). Disposed concentrically with respect to the axis of symmetry (16) of the hollow body (3) in its base (7) are at least three furnaces (8) which have reception devices (9) for the metal compounds (10) to be evaporated. The reception devices (9) are provided with guide pipes (11) which project into the hollow interior of the hollow body (3) and are inclined towards its axis of symmetry (16). The casing (12) of the truncated pyramid merges into a pipe (13) above whose end there is disposed a heatable reception device (5) for the substrate (4). A gas feed pipe (6) terminates in the hollow interior [sic] of the hollow body (3) between the guide pipes (11) and the end of the pipe (13).

Abstract: In order to enable formation of a smooth and dense oxide superconducting film with no clear appearance of grain boundaries in a fine structure even at a high film forming rate, a laser ablation method is employed to apply a laser beam 2 to a target 1 containing components of an oxide superconductive material and deposit particles, which are thus scattered from the target 1, on a substrate 3, while gaseous oxygen is supplied from a gaseous oxygen inlet 7 toward laser plasma 6, which is generated by the application of the laser beam 2.

Abstract: Chemical reactions of superconducting raw materials with active oxygen atoms and their charged particles are accelerated by using at least oxygen plasma in the fabrication process of a superconductive body. Thereby an ionic crystal is grown in a short time, which provides stable superconducting materials of high quality such as high critical temperature and low resistivity. In another aspect, a substrate is irradiated simultaneously with streams of vapor of metal elements, of which a superconductive body is to be composed, and a stream of gas of ions generated in a plasma chamber and film growth is effected while keeping the substrate at a temperature higher than 400.degree. C. to produce a ceramic type superconductive thin film.

Abstract: A method and apparatus are disclosed for generating fine mists of liquids using a rotating turbine blade disposed within an enclosure. A mixture of a liquid and a carrier gas are flowed into the enclosure such that it immediately impacts on the rotating turbine blade disposed near a lower end of the enclosure, and the resulting mist is withdrawn under vacuum near an upper end of the enclosure. A method and apparatus are also disclosed for chemical vapor deposition of thin films of complex chemical compounds using the discussed mists.

Abstract: An improved cathode for a sputtering system includes a metal cylinder and strips of material bonded to the inside of the metal cylinder and/or material sprayed onto the inside of the metal cylinder. The strips may have various specified compositions and/or configurations and/or other characteristics which enhance the ability of the sputtering system to deposit films of high temperature superconductor material on substrates.

Abstract: Apparatus and method for fabricating textured pseudo-single crystal bulk superconducting materials, featuring introduction of a pressure gradient and/or of a magnetic field for enhancement of known melt-texturing directional solidification techniques using a steep temperature gradient furnace for increasing temperatures at which superconductive properties can be maintained in superconducting materials. The strengths of the temperature gradient, pressure gradient and/or magnetic field can be optimally varied, resulting in formation of superconducting material exhibiting superconductive properties at higher temperatures than previously achievable.

Abstract: Methods and reactors are described for the production of high temperature superconductor films on a variety of substrates, particularly those films which include volatile components during their manufacture. The reactors are particularly useful for producing films containing thallium. The reactors provide for relatively low volume cavities in which the substrate is disposed, and control of the thallium oxide overpressure during the processing. In a preferred embodiment, one or more holes or apertures are made in the reactor to permit thallium and thallium oxide to controllably leak from the reactor. For manufacture of double sided superconducting films, a reactor is used having top and bottom plates each with one or more holes in them. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.