Abstract: A cleaning composition comprising a liquid salt, and a hydrogen bond donor for the liquid salt, and a surfactant. Also a method of cleaning using the cleaning composition.

Abstract: A detergent for cleaning media is provided. The detergent comprises deionized water, between about 1% and about 5% by weight of a nonionic surfactant having an hydrophile/lipophile balance (HLB) value between about 10 and about 20, and an ethoxylation level between about 5 and about 20, between about 1% and about 5% by weight of a dispersing agent, between about 3% and about 10% by weight of a chelating agent comprising phosphonic acid, and between about 2% and about 6% by weight of an inorganic salt.

Abstract: An object of the invention is to remove effectively metallic contaminants adhering to the glass substrate surfaces without increasing roughness of the glass substrate surfaces in the glass substrate for a magnetic disk. In a manufacturing method of a glass substrate for a magnetic disk, a cleaning step comprising a treatment of contacting the glass substrate with a cleaning liquid containing peroxodisulfate and having a pH of not less than 2 and not more than 4 is appended. In addition, an example of the cleaning liquid can be prepared by adding sodium peroxodisulfate to an acidic solution.

Abstract: An alkaline detergent composition for hard surface comprises an alkaline agent (component A), a nonionic surfactant (component B), a chelating agent (component C), water (component D), at least one carboxylic acid compound (component E) selected from the group consisting of compounds represented by general formula (1) and general formula (2), and at least one anionic surfactant (component F) selected from the group consisting of surfactants represented by general formula (3) and salts thereof. Therein, the content ratio [component E (weight %)/component B (weight %)] is 1/1.5-15/1, the content ratio [component F (weight %)/component B (weight %)] is 10/1-1/5, and the pH at 25° C. is 12 or greater.

Abstract: A cleaning solution and method for removing submicron particles from the surface and/or the bevel of an electronic substrate such as a semiconductor wafer. The cleaning solution comprises a polycarboxylate polymer or an ethoxylated polyamine. The method comprises the step of contacting a surface of the substrate with a cleaning solution comprised of a polycarboxylate polymer or an ethoxylated polyamine. Additional optional steps in the method include applying acoustic energy to the cleaning solution and/or rinsing the surface with a rinsing solution with or without the application of acoustic energy to the rinsing solution.

Abstract: An alkaline detergent composition for hard surface comprises an alkaline agent (component A), a nonionic surfactant (component B), a chelating agent (component C), water (component D), at least one carboxylic acid compound (component E) selected from the group consisting of compounds represented by general formula (1) and general formula (2), and at least one anionic surfactant (component F) selected from the group consisting of surfactants represented by general formula (3) and salts thereof. Therein, the content ratio [component E (weight %)/component B (weight %)] is 1/1.5-15/1, the content ratio [component F (weight %)/component B (weight %)] is 10/1-1/5, and the pH at 25° C. is 12 or greater.

Abstract: A cleaning solution and method for removing submicron particles from the surface and/or the bevel of an electronic substrate such as a semiconductor wafer. The cleaning solution comprises a polycarboxylate polymer or an ethoxylated polyamine. The method comprises the step of contacting a surface of the substrate with a cleaning solution comprised of a polycarboxylate polymer or an ethoxylated polyamine. Additional optional steps in the method include applying acoustic energy to the cleaning solution and/or rinsing the surface with a rinsing solution with or without the application of acoustic energy to the rinsing solution.

Abstract: A cleaning solution and method for removing submicron particles from the surface and/or the bevel of an electronic substrate such as a hard disk media substrate, or an imprint mold used in the manufacturing of the hard disk media or a read/write head assembly part. The cleaning solution comprises a polycarboxylate polymer or an ethoxylated polyamine. The method comprises the step of contacting a surface of the substrate with a cleaning solution comprised of a polycarboxylate polymer or an ethoxylated polyamine. Additional optional steps in the method include applying acoustic energy to the cleaning solution and/or rinsing the surface with a rinsing solution with or without the application of acoustic energy to the rinsing solution.

Abstract: A cleaning composition which is capable of removing both organic soiling and particulate soiling adhered to a substrate for an electronic device with a high degree of cleanliness, and which also has minimal impact on the environment, as well as a method of cleaning a substrate for an electronic device. The present invention relates to a cleaning composition used for cleaning a substrate for an electronic device including a water-soluble salt (A) containing a transition metal, a chelating agent (B) and a peroxide (C), wherein the amount of the chelating agent (B) is not less than 0.5 molar equivalents relative to the amount of the water-soluble salt (A) containing a transition metal.

Abstract: A microwaviness reducing agent for polishing a substrate for a precision part, containing either a surfactant having two or more ionic hydrophilic groups, or a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, or a salt thereof; a polishing composition for a substrate for a precision part, containing the microwaviness reducing agent, an abrasive and water; a polishing composition comprising water, an abrasive, an organic acid or a salt thereof, and a surfactant, wherein the organic acid is a polycarboxylic acid compound having 2 to 15 total carbon atoms and having either OH group or groups or SH group or groups, and wherein the surfactant has two or more ionic hydrophilic groups in its molecule and has a molecular weight of 300 or more; a method of reducing microwaviness of a substrate for a precision part; and a method for manufacturing a substrate for a precision part.

Abstract: A cleaning solution and method for removing submicron particles from the surface and/or the bevel of an electronic substrate such as a hard disk media substrate, or an imprint mold used in the manufacturing of the hard disk media or a read/write head assembly part. The cleaning solution comprises a polycarboxylate polymer or an ethoxylated polyamine. The method comprises the step of contacting a surface of the substrate with a cleaning solution comprised of a polycarboxylate polymer or an ethoxylated polyamine. Additional optional steps in the method include applying acoustic energy to the cleaning solution and/or rinsing the surface with a rinsing solution with or without the application of acoustic energy to the rinsing solution.

Abstract: A self-cleaning colloidal slurry and process for finishing a surface of a glass, ceramic, glass-ceramic, metal or alloy substrate for use in a data storage device, for example. The slurry comprises a carrying fluid, colloidal particles, etchant, and a surfactant adsorbed and/or precipitated onto a surface of the colloidal particles and/or substrate. The surfactant has a hydrophobic section that forms a steric hindrance barrier and substantially prevents contaminates, including colloidal particles, from bonding to the substrate surface. The slurry is applied to the surface of the substrate while a pad mechanically rubs the surface. Subsequent cleaning with standard soap solutions removes substantially all remaining contamination from the substrate surface. In an exemplary embodiment, the slurry is used to superfinish a glass disk substrate to a surface roughness of less than 2 ?, with substantially no surface contamination as seen by atomic force microscopy (AFM) after standard soap cleaning steps.

Abstract: A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V?0.5×R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

Abstract: A solvent composition comprising 1,1,1,2,2,3,3,4,4,5,5,6,6-tridecafluorohexane (R52-13), trans-1,2-dichloroethylene (tDCE) and a C1-3 alcohol, wherein the content of R52-13 is from 25.0 to 75.0% (by mass, and the same applies hereinafter), the content of tDCE is from 15.0 to 74.9% and the content of the C1-3 alcohol is from 0.1 to 10.0%, to the total amount of R52-13, tDCE and the C1-3 alcohol. This solvent composition can remove oils and greases and flux with a high cleaning performance.

Abstract: A solvent composition comprising 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether in an amount of from 25.0 to 75.0% (by mass, and the same applies hereinafter), trans-1,2-dichloroethylene in an amount of from 15.0 to 74.9%, and a C1-3 alcohol in an amount of from 0.1 to 10.0%, to the total amount of the 1,1,2,2-tetrafluoroethyl-2,2,2-trifluoroethyl ether, the trans-1,2-dichloroethylene and the C1-3 alcohol. The solvent composition of the present invention can remove soil such as flux with a high cleaning performance.

Abstract: A polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition; a process for reducing a surface defect of a substrate comprising applying to a substrate or a polishing pad a polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition fed to the substrate or the polishing pad; and a process for manufacturing a substrate comprising a polishing step comprising applying to a substrate or a polishing pad the above polishing composition.

Abstract: Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

Abstract: A polishing composition for a substrate to be used for a memory hard disk, which comprises the following components (a) to (d): (a) water, (b) at least one compound selected from the group consisting of a polyoxyethylene polyoxypropylene alkyl ether and a polyoxyethylene polyoxypropylene copolymer, (c) at least one compound selected from the group consisting of nitric acid, nitrous acid, sulfuric acid, hydrochloric acid, molybdic acid, sulfamic acid, glycine, glyceric acid, mandelic acid, malonic acid, ascorbic acid, glutamic acid, glyoxylic acid, malic acid, glycolic acid, lactic acid, gluconic acid, succinic acid, tartaric acid, maleic acid and citric acid, and their salts, and (d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and silicon carbide.

Abstract: To provide a polishing composition which enables maintenance of excellent properties and high quality of the surface of a hard disk without lowering polishing rate during polishing of the surface, and which can provide a polished surface in which the amount of dub-off is considerably reduced as compared with that of a conventional level, a polishing composition containing water, a polishing material (particularly alumina), a polishing accelerator, and at least one of hydroxypropyl cellulose and hydroxyalkyl alkyl cellulose is provided.

Abstract: A method for planarizing or polishing a memory or rigid disk is provided. The method comprises abrading at least a portion of the surface with a polishing system comprising (i) a polishing composition comprising water, an oxidizing agent, and a complexing agent selected from the group consisting of ammonia, halide ions, and mixtures thereof, and (ii) a polishing pad and/or an abrasive.

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

Abstract: The present invention relates to a polishing composition for polishing alumina disks, polishing substrates having silica surfaces and semiconductor wafers, comprising a stable aqueous silica sol containing moniliform colloidal silica particles having a ratio (D1/D2) of a particle diameter D1 nm (as measured by dynamic light scattering method) to a mean particle diameter D2 (as measured by nitrogen absorption method) of 3 or more, wherein D1 is between 50 to 800 nm and D2 is between 10 to 120 nm, said moniliform colloidal silica particles being composed of spherical colloidal silica particles and a metal oxide-containing silica bond which bonds these spherical colloidal silica particles together, wherein the spherical colloidal silica particles are linked together in rows in only one plane by observation through an electron microscope, and further wherein said polishing composition contains 0.5 to 50% by weight of said moniliform colloidal silica particles.

Abstract: A cleaning solution for electronic materials contains dissolved oxygen gas at a concentration greater than atmospheric saturation concentration, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. Alternatively, the cleaning solution contains dissolved reducing agents, 0.1-10,000 mg/liter of ammonia, and 0.1-10,000 mg/liter of hydrogen peroxide in water. A method for making the cleaning solution of the present invention is provided. A method for cleaning electronic materials using the cleaning solution of the present invention is also provided.

Abstract: The present invention provides a process for efficient recovery of dyestuffs from dye-based optical disks, and to provide a solvent used for recovery. Disclosed herein is a process for recovering dyestuffs from dye-based optical disks by treating the dyestuff-containing layer with a solvent containing a singlet oxygen quencher. Disclosed also herein is a solvent for dyestuff recovery which contains a singlet oxygen quencher.

Abstract: A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises: (a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition; (b) iron nitrate as a polishing accelerator in an amount within a range of from 0.04 to 2.2 wt % based on the total weight of the composition; (c) citric acid as a stabilizer in an amount within a range of from 0.4 to 22 wt % based on the total weight of the composition; (d) hydrogen peroxide as a polishing acceleration assistant in an amount within a range of from 0.155 to 9.3 wt % based on the total weight of the composition; and (e) water.

Abstract: A polishing composition for a memory hard disk, which comprises the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.001 to 10 wt %, based on the total amount of the polishing composition, of at least one iron salt selected from the group consisting of iron nitrate, iron sulfate, ammonium iron sulfate, iron perchlorate, iron chloride, iron citrate, ammonium iron titrate, iron oxalate, ammonium iron oxalate and an iron chelate complex salt of ethylenediaminetetraacetic acid, (c) from 0.01 to 30 wt %, based on the total amount of the polishing composition, of at least one peroxydisulfate salt selected from the group consisting of ammonium peroxydisulfate, potassium peroxydisulfate and sodium peroxydisulfate, and (d) water.

Abstract: A polishing composition for polishing a memory hard disk, which comprises the following components (a) to (d): (a) from 0.1 to 50 wt %, based on the total amount of the polishing composition, of at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, (b) from 0.0001 to 3.0 wt %, based on the total amount of the polishing composition, of at least one polishing resistance-reducing agent selected from the group consisting of a surfactant, a water-soluble polymer and a polyelectrolyte, (c) from 0.001 to 40 wt %, based on the total amount of the polishing composition, of at least one polishing accelerator selected from the group consisting of an inorganic acid, an organic acid and their aluminum, iron, nickel and cobalt salts, and (d) water.

Abstract: A polishing composition for memory hard disks, which comprises water and at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, and which further contains succinic acid or its salt dissolved in the composition.

Abstract: A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.

Abstract: A cleaning composition comprising at least one low molecular weight polyorganosiloxane selected from the group consisting of straight chain polydiorganosiloxane represented by a general formula: ##STR1## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and l is an integer from 0 to 5), and cyclic polydiorganosiloxane represented by a general formula: ##STR2## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and m is an integer from 3 to 7). To use it as a water system cleaning agent, polyoxyalkylene group containing polyorganosiloxane, a surfactant, and water are additionally mixed. Accordingly, a cleaning effect free from environmental destruction and contamination, equivalent to flon containing cleaning agents, and satisfactorily stable in terms of dispersion as a water system cleaning agent can be obtained.

Abstract: A polishing composition for a memory hard disc, which comprises the following components (a) to (d):(a) water,(b) at least one compound selected from the group consisting of a polystyrenesulfonic acid, and its salts,(c) a compound selected from the group consisting of an inorganic acid and an organic acid, and their salts, other than component (b), and(d) at least one abrasive selected from the group consisting of aluminum oxide, silicon dioxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide.

Abstract: A substrate, on which a base metal layer and a magnetic recording metal layer are to be deposited, is cleaned by contacting it with an aqueous solution of at least one compound selected from a carboxylic acid or L-ascorbic acid having a pH of 5.0 or less.

Abstract: A composition for rinsing a memory hard disc, which comprises water and an additive selected from the group consisting of an oxo-acid, an oxo-acid salt and a chloride.

Abstract: Microelectronics wafer substrate surfaces are cleaned to remove metal contamination while maintaining wafer substrate surface smoothness by contacting the wafer substrate surfaces with an aqueous cleaning solution of an alkaline, metal ion-free base and a polyhydroxy compound containing from two to ten --OH groups and having the formula: ##STR1## wherein or in which --R--, --R.sup.1 --, --R.sup.2 -- and --R.sup.3 -- are alkylene radicals containing two to ten carbon atoms, x is a whole integer of from 1 to 4 and y is a whole integer of from 1 to 8, with the proviso that the number of carbon atoms in the polyhydroxy compound does not exceed ten, and wherein the water present in the aqueous cleaning solution is at least about 40% by weight of the cleaning composition.

Abstract: A cleaning composition comprising at least one low molecular weight polyorganosiloxane selected from the group consisting of straight chain polydiorganosiloxane represented by a general formula: ##STR1## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and l is an integer from 0 to 5), and cyclic polydiorganosiloxane represented by a general formula: ##STR2## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and m is an integer from 3 to 7). To use it as a water system cleaning agent, polyoxyalkylene group containing polyorganosiloxane, a surfactant, and water are additionally mixed. Accordingly, a cleaning effect free from environmental destruction and contamination, equivalent to flon containing cleaning agents, and satisfactorily stable in terms of dispersion as a water system cleaning agent can be obtained.

Abstract: A cleaning composition comprising at least one low molecular weight polyorganosiloxane selected from the group consisting of straight chain polydiorganosiloxane represented by a general formula: ##STR1## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and 1 is an integer from 0 to 5), and cyclic polydiorganosiloxane represented by a general formula: ##STR2## (wherein R.sup.1 is an organic group of single valence substituted by the same or different group or unsubstituted, and m is an integer from 3 to 7). To use it as a water system cleaning agent, polyoxyalkylene group containing polyorganosiloxane, a surfactant, and water are additionally mixed. Accordingly, a cleaning effect free from environmental destruction and contamination, equivalent to flon containing cleaning agents, and satisfactorily stable in terms of dispersion as a water system cleaning agent can be obtained.

Abstract: A method for drying parts that includes contacting the part with a liquid removing composition that contains a straight chain or cyclic polyorganosiloxane.

Abstract: A continuous method for cleaning and/or removing liquid from industrial parts that includes contacting the part with a cleaning or rinsing composition that contains a straight chain or cyclic polyorganosiloxane.

Abstract: A method for removing liquid from parts that includes contacting the part with a cleaning or rinsing composition that contains a straight chain or cyclic polyorganosiloxane.

Abstract: A method for cleaning an industrial object by use of an aqueous agent that includes a polyorganosiloxane. The method uses a plurality of vessels and the agent is recovered and resupplied to the method.