Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n??[Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Abstract: The present invention provides for a system comprising a static reactor vessel which requires no moving parts, and adapted for precise control of reaction processing parameters including temperature, pressure, and flow rate; a mechanism for settling of the product phase from the salt ammonia phase and removing a significant portion of the ammonium chloride waste material; a method for recovering essentially all of the process ammonia and a method for maintaining a reaction environment which is suitably ionic/acidic.

Abstract: A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Abstract: Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).

Abstract: A glassy adhesive including a composition containing at least: a polysilazane compound having structures represented by the following formulae (A-1) and (A-2) and not containing a hydrosilyl group; and a curing catalyst, where a mole ratio of the component (A-1) to the component (A-2), which is (A-1):(A-2), is within a range of 3:7 to 7:3, the composition has a non-volatile content of 50 mass % or more, when the composition being heated at 105° C. for 3 hours, and the curing catalyst is at least one selected from the group consisting of an organic acid, a simple substance of a d block element belonging to the fourth period of the periodic table, a platinum group element, and an amphoteric element, and a compound containing the element. This provides an adhesive that is low-cost, has high UV resistance, and in which cracks and so forth do not occur even after a reflow process.

Abstract: A method of manufacturing a semiconductor package substrate includes forming a trench and a post by etching an upper surface of a base substrate including a conductive material, filling the trench with a resin, removing the resin exposed to outside of the trench such that an upper surface of the post and an upper surface of the resin are at same level, forming a conductive layer on an entire area of the upper surface of the post and the upper surface of the resin, and forming a circuit wiring including an upper circuit wiring and a lower circuit wiring by simultaneously patterning the conductive layer and a lower surface of the base substrate.

Abstract: Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula (SiHa(NR2)bXc)(n+2)Nn(SiH(2?d)Xd)(n?1), wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n?1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR?3]; further wherein each R? of the [SiR?3] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C1-C4 saturated or unsaturated hydrocarbyl group, a C1-C4 saturated or unsaturated alkoxy group, or an amino group [—NR1R2] with each R1 and R2 being further selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d?0; or d=0, c?0.

Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Abstract: A method of making an aminosilane, the method comprising: forming a reaction mixture comprising a hydridosilane, an amine and a dehydrogenative coupling catalyst in a reactor; subjecting the reaction mixture to conditions sufficient to cause a dehydrogenative coupling reaction between the hydridosilane and the amine to form the aminosilane and hydrogen gas; and venting the hydrogen gas; wherein the forming of the reaction mixture comprising the hydridosilane, the amine and the dehydrogenative coupling catalyst comprises continuously feeding the hydridosilane to the reactor containing the amine and the dehydrogenative coupling catalyst.

Abstract: Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.

Abstract: Provided are a composition for depositing a silicon-containing thin film, containing a trisilylamine compound and a method for producing a silicon-containing thin film using the same, and more particularly, a composition for depositing a silicon-containing thin film, containing a trisilylamine compound which is capable of forming a silicon-containing thin film at a very high deposition rate at a low temperature to be usable as a precursor of a silicon-containing thin film and an encapsulant of a display, and a method for producing a silicon-containing thin film by using the same.

Abstract: The present invention relates to a modifier represented by Formula 1, a method for preparing the same, a modified conjugated diene-based polymer including a functional group derived from the modifier and having a high modification ratio, and a method for preparing the polymer.

Abstract: Provided are a novel disilylamine compound, a method for preparing same, and a composition for depositing a silicon-containing thin film including the same. A disilylamine compound of the present invention has excellent reactivity, is thermally stable, and has high volatility, and thus, is used as a silicon-containing precursor, thereby manufacturing a high-quality silicon-containing thin film.

Abstract: A composition, comprising: trisilylamine and less than 5 ppmw of halogen. A method of making a silylamine comprising combining ammonia and a compound comprising aminosilane functionality, where the compound comprising aminosilane functionality is according to formula (I) R1 N(R2)a(SiH3)2?a (I), where R1 is an organic polymer, a C-1-20 hydrocarbyl group or —SiR331, where R3 is C1-6 hydrocarbyl, R2 is a C-1-20 hydrocarbyl group, H, or —SiR331, where R3 is as defined above, subscript a is 0 or 1, provided that R1 and R2 may be the same or different except if R1 is phenyl, R2 is not phenyl, under sufficient conditions to cause a reaction to form a silylamine and a byproduct.

Abstract: A method simply produces a narrowly distributed and high-purity polyalkylene glycol derivative having an amino group at an end without using a heavy metal catalyst.

Abstract: A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

Abstract: The method described herein provides a method for preparing trisilylamine. In one aspect, the method comprises: providing a reaction mixture of trisilylamine and monochlorosilane into a reactor wherein the reaction mixture is at a temperature and pressure sufficient to provide trisilylamine in a liquid phase wherein the reaction mixture is substantially free of an added solvent; contacting the reaction mixture with ammonia to provide a crude mixture comprising trisilylamine and an ammonium chloride solid wherein monochlorosilane is in stoichiometric excess in relation to ammonia; purifiying the crude mixture to provide trisilylamine wherein the trisilyamine is produced at purity level of 90% or greater; and optionally removing the ammonium chloride solid from the reactor.

Abstract: A method of forming an MT-propyl siloxane resin includes the steps of hydrolyzing propyl trichlorosilane in an excess of water to provide a T-propyl siloxane resin and capping the T-propyl siloxane resin formed from the hydrolysis of the propyl trichlorosilane with a silicon-containing M-group capping agent to form the MT-propyl siloxane resin. The MT-propyl siloxane resin is useful in a variety of personal care applications, and in particular, as an additive to personal care compositions.

Abstract: The present invention pertains to a copolymer obtained by reacting a mixture of acrylonitrile or of a mixture of acrylonitrile and an organic molecule that can be copolymerized with acrylonitrile, with which a monomeric, oligomeric and/or polymeric silazane can be obtained, said silazane containing at least one vinylic double bond. The copolymer can be brought into fiber form and/or made infusible. The production of ceramic fibers by pyrolysis is possible with fiber-like copolymers.

Abstract: A nanoimprint-mold release agent including an alkoxysilane compound represented by general formula (1) is provided wherein Rf and Rf? are each independently a fluoroalkyl group of 1 to 10 carbon atoms; R1 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms; R2 and R3 are each independently methyl group or ethyl group; X and Y are each independently an ether linkage or an ester linkage; a and b are each 0 or 1; m, n, and p are each an integer of 0 to 6; q is an integer of 1 to 6 and r is an integer of 0 to 2.

Abstract: The present invention relates to a method for producing inorganic oxide particles, comprising at least the following steps of: coagulating a dispersion obtained by carrying out the hydrolysis reaction and the polycondensation reaction of a metal alkoxide in the presence of a basic catalyst; filtering the dispersion to obtain particles; and drying the particles, wherein the step of coagulating the dispersion is carried out by adding a coagulant comprising at least one compound selected from the group consisting of carbon dioxide, ammonium carbonate, ammonium hydrogen carbonate and ammonium carbamate to the dispersion. The inorganic oxide particles obtained by the method of the present invention have high purity and are excellent in flowability.

Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of Si02, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.

Abstract: Described herein are precursors and methods for forming silicon-containing films.

Abstract: The present invention relates to a method for producing inorganic oxide particles, comprising at least the following steps of: coagulating a dispersion obtained by carrying out the hydrolysis reaction and the polycodensation reaction of a metal alkoxide in the presence of a basic catalyst; filtering the dispersion to obtain particles; and drying the particles, wherein the step of coagulating the dispersion is carried out by adding a coagulant comprising at least one compound selected from the group consisting of carbon dioxide, ammonium carbonate, ammonium hydrogen carbonate and ammonium carbamate to the dispersion. The inorganic oxide particles obtained by the method of the present invention have high purity and are excellent in flowability.

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Abstract: Provided are a modifying agent obtained by subjecting a silicon-containing compound having a protected primary amino group and at least two hydrolyzable groups to complete condensation, a method of producing a modified conjugated diene-based polymer, a modified conjugated diene-based polymer obtained by the production method, a rubber composition using the polymer, and a pneumatic tire. The modified conjugated diene-based polymer has excellent low heat generating property and abrasion resistance, and the rubber composition is obtained by using the modified conjugated diene-based polymer and the pneumatic tire is obtained by using the rubber composition.

Abstract: The present invention relates to a method for producing inorganic oxide particles, comprising at least the following steps of: coagulating a dispersion obtained by carrying out the hydrolysis reaction and the polycondensation reaction of a metal alkoxide in the presence of a basic catalyst; filtering the dispersion to obtain particles; and drying the particles, wherein the step of coagulating the dispersion is carried out by adding a coagulant comprising at least one compound selected from the group consisting of carbon dioxide, ammonium carbonate, ammonium hydrogen carbonate and ammonium carbamate to the dispersion. The inorganic oxide particles obtained by the method of the present invention have high purity and are excellent in flowability.

Abstract: The present invention relates to a ligand compound, a chromium compound, and a catalyst system including the same. The catalyst system including the ligand compound or chromium compound according to the present invention exhibits high catalytic activity in ethylene oligomerization reaction, and therefore, polyethylene can be prepared using a small amount of comonomers or using only ethylene without comonomers.

Abstract: Provided are a novel amino-silyl amine compound, a method for preparing the same, and a silicon-containing thin-film using the same, wherein the amino-silyl amine compound has thermal stability and high volatility and is maintained in a liquid state at room temperature and under a pressure where handling is easy to thereby form a silicon-containing thin-film having high purity and excellent physical and electrical properties by various deposition methods.

Abstract: The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material.

Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.

Abstract: The present invention relates to a polysiloxane compound having a structure represented by formula 1: wherein each of F1, F2, F3 and F4 is individually selected from one of a first group, a second group, a third group and a fourth group, the first group is selected from a C2˜C10 hydrocarbon group having amino group(s), a C2˜C10 hydrocarbon group having epoxy group(s), a C2˜C10 hydrocarbon group having carbonyl group(s) or a C2˜C10 hydrocarbon group having alkoxy group(s), the second group is a C2˜C10 hydrocarbon group having amino group(s), the third group is selected from a C2˜C10 hydrocarbon group having epoxy group(s), a C2˜C10 hydrocarbon group having carbonyl group(s), a C2˜C10 hydrocarbon group having SiCl group(s) or a C2˜C10 hydrocarbon group having alkoxy group(s), the fourth group is selected from a C2˜C10 hydrocarbon group having aryl group(s) or a C2˜C10 hydrocarbon group having alkoxy group(s).

Abstract: The invention relates to the preparation of chiral compounds, in particular to the preparation of chiral compounds which may be used as intermediates for the preparation of anti-diabetic agents, preferably sitagliptin.

Abstract: Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

Abstract: Compositions and methods for producing polymerization initiators comprising at least two protected primary amine groups. Polymers prepared using such polymerization initiators can comprise a residue of the polymerization initiator and can initially comprise the at least two protected primary amine groups. Such polymers can undergo a deprotection process thereby yielding a polymer having one or more unprotected primary amine groups. Polymers having primary amine groups can be employed in rubber compositions, which have a variety of potential applications, such as, for example, in tire manufacturing.

Abstract: A process for preparing 1,3,5-triethyl-2,4,6-trihydrido-2,4,6-triethylamino-1,3,5-triaza-2,4,6-trisilacyclohexane, wherein trichlorosilane is reacted with ethylamine in a solvent.

Abstract: New (E)-styryl-alkynylsubstituted silicon compounds having the generalized formula 1 and A new method of obtaining (E)-styryl-alkynylsubstituted silicon compounds having the generalized formula 1. A denotes: phenylmethylsilyl, 1,4-bis(dimethylsilyl)benzene, 1,2-bis(dimethylsilyl)ethane, 1,1,3,3-tetramethyldisilazane, 1,1,3,3-tetramethyldisiloxane, R? denotes: tri(isopropyl)silyl, 1-pentyl, 2-(trimethylsiloxy)-2-butyl, 1-(trimethylsiloxy)-1-cyclohexyl, triethylgermyl, R? denotes: H or Cl and when A denotes phenylmethylsilyl then R? denotes also methyl or a methoxy group. A method of obtaining (E)-styrylalkynylsubstituted silicon compounds having the generalized formula 1 where A, R? and R? denote the same as stated above by way of a silylative coupling reaction between a suitable substituted styrene and a suitable vinyl-alkynylsubstituted silicon compound in the presence of a ruthenium(II) complex as catalyst.

Abstract: Disclosed are a metallocene complex represented by the general formula (I), (II) or (III), and a polymerization catalyst composition containing such a metallocene complex. In the formulae (I), (II) and (III), M represents a lanthanoid element, scandium or yttrium; CpR independently represents an unsubstituted or substituted indenyl; CpR? represents an unsubstituted or substituted cyclopentadienyl, indenyl or fluorenyl; Ra-Rf independently represents a hydrogen or an alkyl group having 1-3 carbon atoms; X and X? respectively represent a hydrogen atom, a halogen atom, an alkoxide group, a thiolate group, an amide group, a silyl group or a hydrocarbon group having 1-20 carbon atoms; L represents a neutral Lewis base; w represents an integer of 0-3; and [B]? represents a non-coordinating anion.

Abstract: An object of the present invention is to provide a method for producing porous silica particles having a small particle diameter in high yield relative to a volume of a reaction solution. In order to achieve the object, the present invention provides a method for producing porous silica particles having pores on the surfaces thereof, the method including a step of adding a mixed solution (solution A) containing tetraalkoxysilane, alkylamine, and alcohol to a mixed solution (solution B) containing ammonia, alcohol, and water and performing a hydrolysis and condensation reaction of the tetraalkoxysilane to produce silica particles, and a step of removing the alkylamine from the silica particles.

Abstract: The present invention relates to new (triorganosilyl)alkynes and their derivatives having general formula 1 R1—C?C—Z (I) In its second aspect, this invention relates to a new selective method for the preparation of new and conventional (triorganosilyl)alkynes and their derivatives having the general formula 1, by the silylative coupling of terminal alkynes with halogenotriorganosilanes in the presence of an iridium catalyst and a tertiary amine.

Abstract: A method of forming an MT-propyl siloxane resin includes the steps of hydrolyzing propyl trichlorosilane in an excess of water to provide a T-propyl siloxane resin and capping the T-propyl siloxane resin formed from the hydrolysis of the propyl trichlorosilane with a silicon-containing M-group capping agent to form the MT-propyl siloxane resin. The MT-propyl siloxane resin is useful in a variety of personal care applications, and in particular, as an additive to personal care compositions.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: Novel material for chromatographic separations, processes for its preparation, and separation devices containing the chromatographic material. In particular, the novel materials are porous silicon oxynitride materials, which desirably can be surface modified and have enhanced stability at high pH. The novel porous silicon oxynitride material may offer efficient chromatographic separations, and hold great promise as packing material for chromatographic separations.

Abstract: Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Abstract: Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film.

Abstract: The present invention relates to a method for cleaning wafers while preventing pattern collapse of the wafers in semiconductor device fabrication, the wafer having at its surface an uneven pattern and containing silicon element at least on surfaces of recessed portions. Provided is: a liquid chemical for forming a protective film which allows efficient cleaning; and a method for cleaning wafers, using the liquid chemical. A liquid chemical for forming a water repellent protective film is provided for forming a protective film on a wafer (having at its surface an uneven pattern and containing silicon element at least at a part of the uneven pattern), the protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains a dialkylsilyl compound represented by the formula [1] and does not contain an acid and a base.

Abstract: Provided are a surface treatment agent for which hydrophobization to a high degree is possible even in a case of the material of a substrate surface being TiN or SiN, and surface treatment method using such a surface treatment agent. The surface treatment agent according to the present invention contains a cyclic silazane compound. As this cyclic silazane compound, a cyclic disilazane compound such as 2,2,5,5-tetramethyl-2,5-disila-1-azacyclopentane and 2,2,6,6-tetramethyl-2,6-disila-1-azacyclohexane and a cyclic trisilazane compound such as 2,2,4,4,6,6-hexamethylcyclotrisilazane and 2,4,6-trimethyl-2,4,6-trivinylcyclotrisilazane are preferred. In the surface treatment, a substrate surface is exposed to a surface treatment agent according to the present invention, and the substrate surface is hydrophobized.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: A carbon nanotube material is exposed to ultraviolet rays, and a silicon-containing compound capable of modifying the surface of the carbon nanotube material in combination with the ultraviolet rays is supplied to thereby modify the surface of the carbon nanotube material.