Gallium(ga) Or Indium(in) Patents (Class 75/688)
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Publication number: 20140271343Abstract: A solder composition includes about 4% to about 25% by weight tin, about 0.1% to about 8% by weight antimony, about 0.03% to about 4% by weight copper, about 0.03% to about 4% by weight nickel, about 66% to about 90% by weight indium, and about 0.5% to about 9% by weight silver. The composition can further include about 0.2% to about 6% by weight zinc, and, independently, about 0.01% to about 0.3% by weight germanium. The composition can be used to solder an electrical connector to an electrical contact surface on a glass component.Type: ApplicationFiled: May 28, 2014Publication date: September 18, 2014Applicant: Antaya Technologies Corp.Inventors: Jennie S. Hwang, John Pereira, Alexandra Mary Mackin, Joseph C. Gonsalves
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Publication number: 20120301383Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.Type: ApplicationFiled: March 20, 2012Publication date: November 29, 2012Inventor: Christopher J. Nagel
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Patent number: 8043409Abstract: A production method of an indium-based nanowire product comprising indium-based nanowires according to the present invention is characterized in that the method comprises the step of: disproportionation-reacting particles including indium subhalide as main components in a nonaqueous solvent, to obtain nanowires including metal indium as main components. The electroconductive oxide nanowire product comprising electroconductive oxide nanowires of the present invention can be obtained by: subjecting, the indium nanowires additionally doped with doping metals, to a heating oxidation treatment; or doping oxides of doping metals into indium oxide nanowires obtained from the indium-based nanowires.Type: GrantFiled: November 10, 2006Date of Patent: October 25, 2011Assignee: Sumitomo Metal Mining Co., Ltd.Inventor: Masaya Yukinobu
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Patent number: 7938879Abstract: A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.Type: GrantFiled: May 11, 2007Date of Patent: May 10, 2011Assignee: Purdue Research FoundationInventors: Jerry M. Woodall, Eric S. Harmon, Kurt C. Koehler, Jeffrey T. Ziebarth, Charles R. Allen, Yuan Zheng, Jong-Hyeok Jeon, George H. Goble, David B. Salzman
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Publication number: 20100326237Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.Type: ApplicationFiled: February 23, 2010Publication date: December 30, 2010Inventor: Christopher J. Nagel
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Publication number: 20040083854Abstract: A 99.99% pure indium feed is charged into a crucible and heated to 1250 ° C. by an upper heater in a vacuum atmosphere at 1×10−4 Torr, whereupon indium evaporates, condenses on the inner surfaces of an inner tube and drips to be recovered into a liquid reservoir in the lower part of a tubular member, whereas impurity elements having a lower vapor pressure than indium stay within the crucible. The recovered indium mass in the liquid reservoir is heated to 1100° C. by a lower heater and the resulting vapors of impurity elements having a higher vapor pressure than indium pass through diffuser plates in an upper part of the tubular member to be discharged from the system, whereas the indium vapor recondenses upon contact with the diffuser plates and returns to the liquid reservoir, yielding 99.9999% pure indium, while preventing the loss of indium.Type: ApplicationFiled: July 2, 2003Publication date: May 6, 2004Applicant: DOWA MINING CO., LTD.Inventors: Kishio Tayama, Toshiaki Hodozuka
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Patent number: 6533838Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.Type: GrantFiled: June 19, 2000Date of Patent: March 18, 2003Assignee: Dowa Mining Co., Ltd.Inventors: Takeharu Yamamura, Hidekazu Kato, Takashi Ohgami, Kishio Tayama, Kanichi Okuda
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Publication number: 20020162419Abstract: In a process for separating impurities from a raw gallium material containing impurities, a process for refining gallium comprising progressively solidifying a raw gallium material provided in a liquid state inside a vessel while applying stirring, such that the diameter of the tubular solidification boundary gradually advances from the inner wall plane of the vessel towards the center of the vessel to reduce the diameter of the tubular solidification boundary, and separating the liquid phase remaining in the central portion of the vessel from the solidified phase before the entire raw material inside the vessel is solidified. The process above is repeated as required by using, as the raw gallium material, the solidified phase from which the liquid phase is separated. A metallic gallium favorably used for the preparation of a compound semiconductor can be obtained by analyzing the impurity concentration of the impurity-concentrated Ga separated from the solidified layer.Type: ApplicationFiled: April 30, 2002Publication date: November 7, 2002Applicant: DOWA MINING CO., LTD.Inventors: Takeharu Yamamura, Hidekazu Kato, Takashi Ohgami, Kishio Tayama, Kanichi Okuda
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Patent number: 6126719Abstract: The present invention is directed to an apparatus and method for recovering the group III elemental component of a group III-V material waste material. The method includes heating, under a reduced pressure, solid waste materials which contain group III-V material to cause the group III-V material to separate into a group III element and a group V element vapor; drawing off the group V element vapor; condensing the group V element vapor to produce a condensed group V element solid; and zone refining the group III element to produce a purified group III element. The apparatus is designed to carry out this method in the plant which manufactures the group III-V waste material.Type: GrantFiled: January 21, 1998Date of Patent: October 3, 2000Assignee: The University of DaytonInventors: Jeffrey Allen Sturgill, Joseph Thomas Swartbaugh
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Patent number: 5972073Abstract: The present invention is directed to a method for separating the group III element component of a group III-V material from an aqueous waste containing a group III-V material to allow for their recovery and beneficial use. The method includes adjusting the pH of an aqueous waste containing a group III-V material to a pH from about 9.5 to about 12.5 by adding an alkali metal hydroxide base to the aqueous waste; precipitating a group V element oxyanion by adding a soluble alkaline metal salt to the aqueous waste; separating the group V element oxyanion from the aqueous waste; adjusting the pH of the aqueous waste to form a group III element hydroxide precipitate by adding a mineral acid to the aqueous waste; separating the group III element hydroxide precipitate from the aqueous waste; and recovering the group III element from the group III element hydroxide precipitate.Type: GrantFiled: October 2, 1997Date of Patent: October 26, 1999Assignee: The University of DaytonInventors: Jeffrey Allen Sturgill, Joseph Thomas Swartzbaugh
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Patent number: 5792236Abstract: Liquid gallium or gallium alloy is utilized as a mercury substitute for a variety of applications. The liquid gallium or gallium alloy is either free of metal oxides or has only very low quantities of metal oxides.Type: GrantFiled: November 20, 1995Date of Patent: August 11, 1998Assignee: Virginia Tech Intellectual Properties, Inc.Inventors: Larry T. Taylor, James Rancourt
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Patent number: 5611989Abstract: The invention relates to a method to be used in producing easily volatile metals from their sulfides. The method employs two closely connected furnaces, a reduction furnace and a converter, which are operated at normal pressure, so that the material transfer therebetween is arranged to be carried out continuously at normal pressure through the channels provided in between the furnaces. As a result of chemical reactions taking place in the furnaces, the hydrostatic pressure in the furnaces changes, and the circulations caused by these changes through the channels at the same time bring about recycling of the sulfide matte needed in the process from the reduction furnace to the converter and the recycling of the molten metal from the converter to the reduction furnace.Type: GrantFiled: December 18, 1995Date of Patent: March 18, 1997Assignee: Outokumpu Research OyInventors: Timo Talonen, Heikki Eerola, Antti Roine
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Patent number: 5458669Abstract: A process for the purification of a raw gallium material to produce a purified gallium material having a higher purity than that of the raw gallium material having steps of:maintaining the raw gallium material in its melted condition within a vessel having a means, for example a tube, positioned at or near a center portion of an inside of the vessel, through which means a cooling medium is passed, andkeeping the raw gallium material in the vessel at a controlled temperature so that the purified gallium material is deposited on an outer surface of the means.Type: GrantFiled: October 27, 1993Date of Patent: October 17, 1995Assignee: Sumitomo Chemical Company, LimitedInventors: Hideo Maeda, Hidekimi Kadokura
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Patent number: 5108497Abstract: Indium-containing feedstocks, such as flue dusts from a refining or smelting process, are treated to increase the concentration of indium and at the same time to reduce the concentrations of lead, copper, and arsenic. The flue dusts are treated in a sodium-doped lead bath at temperatures of 675.degree. to 800.degree. C. Soda ash in the amount of 15 to 35 weight percent is blended with the feed stock and added to the sodium-doped lead bullion. The sodium reacts with the dusts to form a liquid dross, which is removed, cooled, and crushed. The powdered dross is water leached to remove the sodium salts. The indium remains in the filler cake and can be processed by conventional methods for the recovery of indium. About 95% of the indium reports to the filter cake, while lead retention in the filter cake is only about 5-15% of the initial lead content in the dust. A majority of the zinc also reports to the filter cake.Type: GrantFiled: September 5, 1990Date of Patent: April 28, 1992Assignee: Indium Corporation of AmericaInventors: Nicholas B. Gomez, John P. Hager, Charles E. T. White, Laurence G. Stevens