Germanium(ge) Patents (Class 75/689)
  • Patent number: 10909624
    Abstract: A method and system for computing a stable index value of fresh water based on water quality category and/or grade from current values of root commodities (i.e. freely marketed products) that either have fresh water as a constituent and/or utilize fresh water in their production, usable to develop a stable investment instrument for investing in fresh water. A processor may process associations between a root commodity and a water quality category of fresh water. A display associated with a computer may display updateable current prices of fresh water of a particular water quality category and/or grade and updateable current prices of one or more root commodities. A water measurement device may measure at least one water source of fresh water with respect to at least one of TDS, carbonate content, pH, hardness, sodium, chloride, nitrate, toxins and sodium adsorption ratio and compare against standards to categorize the fresh water.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: February 2, 2021
    Assignee: AQUA-INDEX LTD.
    Inventor: Yaacov Shirazi
  • Publication number: 20140302391
    Abstract: The present disclosure is directed at clathrate (Type I) allotropes of silicon, germanium and tin. In method form, the present disclosure is directed at methods for forming clathrate allotropes of silicon, germanium or tin which methods lead to the formation of empty cage structures suitable for use as electrodes in rechargeable type batteries.
    Type: Application
    Filed: March 27, 2014
    Publication date: October 9, 2014
    Applicant: Southwest Research Institute
    Inventors: Michael A. MILLER, Kwai S. CHAN, Wuwei LIANG, Candace K. CHAN
  • Patent number: 8585797
    Abstract: Methods for preparing nc-Ge/GeO2 composites by under reductive thermal processing conditions are described. Also described are methods of preparing freestanding nc-Ge via release from the nc-Ge/GeO2 composites.
    Type: Grant
    Filed: June 16, 2008
    Date of Patent: November 19, 2013
    Assignee: The Governors of the University of Alberta
    Inventors: Jonathan Gordon Conn Veinot, Eric James Henderson
  • Patent number: 8500844
    Abstract: A method of producing a powder of crystalline germanium.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: August 6, 2013
    Assignee: Cima NanoTech Israel Ltd.
    Inventors: Valery Rosenband, Eric L. Granstrom, Lorenzo Mangolini
  • Publication number: 20120301383
    Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.
    Type: Application
    Filed: March 20, 2012
    Publication date: November 29, 2012
    Inventor: Christopher J. Nagel
  • Publication number: 20110268643
    Abstract: A process is provided for the production of elemental silicon from a silica containing glass melt including contacting the glass with a metal capable of undergoing a bimolecular reaction between the glass and metal at elevated temperature to reduce the oxidation state of the silicon in the glass to elemental silicon while oxidizing the metal, collecting, and optionally separating the elemental silicon. Similarly, elemental germanium is produced from a germania-containing glass.
    Type: Application
    Filed: October 9, 2009
    Publication date: November 3, 2011
    Inventors: Johon R. Leblanc, Diane S. LeBlance
  • Publication number: 20100326237
    Abstract: The present invention relates to new compositions of matter, particularly metals and alloys, and methods of making such compositions. The new compositions of matter exhibit long-range ordering and unique electronic character.
    Type: Application
    Filed: February 23, 2010
    Publication date: December 30, 2010
    Inventor: Christopher J. Nagel
  • Patent number: 7682593
    Abstract: The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: March 23, 2010
    Assignee: Umicore
    Inventors: Eric Robert, Tjakko Zijlema
  • Publication number: 20080311027
    Abstract: The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
    Type: Application
    Filed: September 16, 2005
    Publication date: December 18, 2008
    Applicant: Umicore
    Inventors: Eric Robert, Tjakko Zijlema
  • Patent number: 5850064
    Abstract: A method is described for the liquid phase synthesis of particles. The particles are composed of silicon or germanium and are optionally produced at sizes such that the particles exhibit quantum size effects. The particles are produced from an organometallic (tetra-organosilicon or tetra-organogermanium) precursors which is dissolved in a solvent that transmits a wavelength of light that photolyzes the precursor. The reaction is carried out under an inert atmosphere. A passivating agent is added to arrest particle growth and impart solubility to the particle. Optionally, a dopant is incorporated into the particle in the course of production so as to modify the electronic properties of the semiconductor particle.
    Type: Grant
    Filed: April 11, 1997
    Date of Patent: December 15, 1998
    Assignee: Starfire Electronics Development & Marketing, Ltd.
    Inventor: Avery Nathan Goldstein