Abstract: An addressable valve system is described wherein a plurality of valves are embedded into a single, compact valve block. Each valve comprises a piston moving in a bore in the block. A magnet embedded in the piston is positioned within a coil. When energized, the coil attracts the magnet and the plunger upwards away from a valve seat. Magnetic shields disposed between the pistons provide magnetic isolation between the pistons and simultaneously apply a closing force to the pistons by drawing the magnets downward towards the valve seat. When energized, the coils overwhelm the closing force and open the valves. Electronics for the valve block and the coils are provided on a circuit board overlying the pistons and bores. The electronics provide addressability of the valves and automatically generate “pick” and “hold” timing whereby the initial motivating force (voltage) applied to the current is higher to get the valves moving quickly when valve is first commanded to open.
Abstract: When gradation data of a present frame is corrected in combination with gradation data of a preceding frame for each display pixel, the level of correction is controlled according to a predetermined dispersion pattern corresponding to a matrix of pixels on a plasma display panel. The display pixels where the gradation level varies in the same way are not corrected uniformly, but some are excessively corrected and some are uncorrected such that they are mixed in a two-dimensional pattern. Moving images displayed on the plasma display panel with gradations expressed according to the subfield process for pixels are prevented from suffering false moving image contours.
Abstract: A first MOS transistor and a second MOS transistor are interconnected in series. Basically, a set of these MOS transistors are alternately turned on according to a switching signal. The collector of a third transistor is connected to the gate of the second MOS transistor. A capacitor is provided between the base of the third transistor and the connection point between the first MOS transistor and the second MOS transistor.