Abstract: A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, N-side and P-side waveguiding layers, and N-type and P-type cladding layers. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The SL layers of the N-side and P-side SL waveguiding layers have layer thicknesses between approximately 1 nm and 5 nm that are optimized for waveguide planarity. In another embodiments, planarization is enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN SL, GaInN/GaInN SL or as bulk layers. In further embodiments, planarization is enhanced by selecting optimal SL layer thicknesses and growth rates.

Abstract: According to embodiments of the present invention, a light emitting device is provided. The light emitting device includes: an active region comprising at least one p-i-n junction, the at least one p-i-n junction comprising a p-doped region, an intrinsic region and an n-doped region; a first contact; and a second contact, wherein the active region is disposed between the first contact and the second contact; and wherein a voltage applied to the first contact and the second contact produces a current configured to flow between the first contact and the second contact in a direction substantially parallel to a surface of the intrinsic region of the active region configured to emit a light. According to embodiments of the present invention, the intrinsic region includes a multiple quantum well (MQW) such that a current injected flows laterally in a direction substantially parallel to the surface of the wells of the MQW.

Abstract: A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The superlattice layers of the N-side and P-side SL waveguiding layers define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm. In accordance with another embodiment of the present disclosure, planarization can be enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN or GaInN/GaInN SL or as bulk waveguiding layers.

Abstract: A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.

Abstract: This disclosure relates to a system and method for creating nano-object arrays. A nano-object array can be created by exposing troughs in a corrugated surface to nano-objects and depositing the nano-objects within or orienting the nano-objects with the troughs.

Abstract: A composite material and related methods are described, the composite material configured to exhibit at least one of a negative effective permittivity and a negative effective permeability for incident radiation of at least one wavelength. The composite material comprises an arrangement of electromagnetically reactive cells of small dimension relative to the wavelength, each cell having a plurality of quantum dots associated therewith for enhancing a resonant response thereof to the incident radiation at the wavelength.

Abstract: A composite conductive film formed of a polymer-matrix and a plurality of conductive lines less than micro-sized and its fabricating method are provided. The conductive lines are arranged parallel and spaced apart from each other so as to provide anisotropic conductivity. The present conductive film can serve as an electrical connection between a fine-pitch chip and a substrate. Additionally, an adhesive layer is formed on two opposite sides of the conductive film along its conductive direction to increase adhesive areas. The strength and reliability of the package using the conductive film are thus enhanced.

Abstract: A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.

Abstract: A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.