Abstract: The disclosure provides novel graphene-reinforced ceramic composites and methods for making such composite materials.

Abstract: Surface films, paints, or primers can be used in preparing aircraft structural composites that may be exposed to lightning strikes. Methods for making and using these films, paints or primers are also disclosed. The surface film can include a thermoset resin or polymer, e.g., an epoxy resin and/or a thermoplastic polymer, which can be cured, bonded, or painted on the composite structure. Low-density electrically conductive materials are disclosed, such as carbon nanofiber, copper powder, metal coated microspheres, metal-coated carbon nanotubes, single wall carbon nanotubes, graphite nanoplatelets and the like, that can be uniformly dispersed throughout or on the film. Low density conductive materials can include metal screens, optionally in combination with carbon nanofibers.

Abstract: The objective of the present teaching is to provide a porous material including carbon nanohorns. The porous material includes carbon nanohorns and has a predetermined three-dimensional shape.

Abstract: Systems and methods that incorporate nanostructures into microdevices are discussed herein. These systems and methods can allow for standard microfabrication techniques to be extended to the field of nanotechnology. Sensors incorporating nanostructures can be fabricated as described herein, and can be used to reliably detect a range of gases with high response.

Abstract: A nanocomposite fluid includes a fluid medium; and a nanoparticle composition comprising nanoparticles which are electrically insulating and thermally conductive. A method of making the nanocomposite fluid includes forming boron nitride nanoparticles; dispersing the boron nitride nanoparticles in a solvent; combining the boron nitride nanoparticles and a fluid medium; and removing the solvent.

Abstract: There are provided a high-permittivity dielectric raw material, an antenna device using the raw material and being useful as, especially, the built-in antenna device of a portable phone; a portable phone which can be reduced in weight, thickness and size, with an antenna radiation efficiency improved, and an electromagnetic wave shielding body for effectively shielding electromagnetic wave from an electric cooker. A dielectric raw material A having carbons dispersed in a silicone rubber base material 1, wherein, in any one of dielectric raw materials A, 1) containing 150 to 300 pts.wt. of carbons per 100 pts.wt.

Abstract: A method of fabricating nanowires or microwires employs a robust conductive surface whose edges define electrodes for promoting electrochemical deposition of nanowire material at those edges. Controlled deposition times and thin conductive layers allow extremely small diameter wires to be created and then removed without destruction of the pattern and the wires to be applied to a second substrate or used for composite materials.

Abstract: A method of making a nanoparticle filled dielectric material. The method includes mixing nanoparticle precursors with a polymer material and reacting the nanoparticle precursors mixed with the polymer material to form nanoparticles dispersed within the polymer material to form a dielectric composite.

Abstract: A method for making phase change memory is provided. The method includes following steps. A substrate is provided. A plurality of first row electrode leads and the second row electrode leads is located on the substrate. A carbon nanotube layer is applied on the substrate to cover the first row electrode lead and the second row electrode lead. The carbon nanotube layer is patterned to form a plurality of carbon nanotube units located on the second row electrode lead. A phase change layer is applied on the surface of each carbon nanotube unit. A plurality of first electrodes, a plurality of second electrodes, a plurality of first row electrode leads and a plurality of second row electrode leads is located on the substrate.

Abstract: The present invention relates to a novel porous film material which comprises at least one carbonaceous semimetal oxide phase, and to a process for production thereof. The invention also relates to the use of these porous film materials as a separator layer or for production of such separator layers in electrochemical cells, particularly in lithium cells and especially in lithium secondary cells.

Abstract: Composite particles of a metal oxide particle within a crosslinked, cored dendrimer are described. Additionally, methods of making the composite particles and compositions that contain the composite particles are described.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: A two step method for preparing a filler composition, the filler composition useful to prepare a nanocomposite polymer and an epoxy nanocomposite coating. First, disperse a water dispersible filler material in a liquid comprising water, but without any added intercalation agent, to form a dispersion. Second, replace at least a portion of the water of the liquid with an organic solvent so that the water concentration of the liquid is less than six percent by weight to form the filler composition, the average size of at least one dimension of the filler material being less than two hundred nanometers upon examination by transmission electron microscopy of a representative freeze dried sample of the dispersion of the first step. A nanocomposite polymer can be prepared by mixing the filler composition with one or more polymer, polymer component, monomer or prepolymer to produce a polymer containing the filler composition.

Abstract: A method of making a water soluble carbon nanostructure includes treating a fluorinated carbon nanostructure material with a polyol in the presence of a base. A water soluble carbon nanostructure comprises a fluorinated carbon nanostructure covalently bound to a polyol. Exemplary uses of water soluble carbon nanostructures include use in polymer composites, biosensors and drug delivery vehicles.

Abstract: A circuit device includes a substrate 11, and a transmission line 10. The transmission line 10 includes a dielectric film 13 formed on the substrate 11, and a signal line formed on the dielectric film 13. The dielectric film 13 includes a nano-composite film in which particles of a first material are dispersed in a second material.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: A lunar dust simulant containing nanophase iron and a method for making the same. Process (1) comprises a mixture of ferric chloride, fluorinated carbon powder, and glass beads, treating the mixture to produce nanophase iron, wherein the resulting lunar dust simulant contains ?-iron nanoparticles, Fe2O3, and Fe3O4. Process (2) comprises a mixture of a material of mixed-metal oxides that contain iron and carbon black, treating the mixture to produce nanophase iron, wherein the resulting lunar dust simulant contains ?-iron nanoparticles and Fe3O4.

Abstract: Disclosed is an insulating varnish composition including polyamideimide resin and 1 to 40 parts by weight of surface-treated silica in a sol state per 100 parts by weight of the polyamideimide resin. An insulated layer formed using the insulating varnish composition may have excellent corona discharge resistance, thereby preventing the insulation breakdown.

Abstract: A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.

Abstract: A reflection type display device (10) includes: a plasmon resonance layer (32) in which metal nanoparticles (80) are dispersed; a band-pass filter (40); a light shutter (20); and a silicon solar cell layer (50a) being provided close to the plasmon resonance layer (32). The band-pass filter (40) and the light shutter (20) are provided so as to overlap the plasmon resonance layer (32) in planar view. The reflection type display device (10) performs display in such a manner that: the metal nanoparticles (80) allow light having a specific wavelength to pass through; the light is then reflected by the band-pass filter (40); and the light shutter (20) adjusts an intensity of the light thus reflected.

Abstract: A method for preparing a filler composition useful for preparing a nanocomposite polymer is provided. The method includes a first step of dispersing a water dispersible filler material in a liquid comprising water to form a dispersion and a second step of replacing at least a portion of the water of the liquid with an organic solvent. The resulting filler composition features a water concentration of the liquid of less than six percent by weight, and the average size of at least one dimension of the filler material is less than two hundred nanometers upon examination by transmission electron microscopy of a representative freeze dried sample of the dispersion of the first step. A nanocomposite polymer, particularly and epoxy resin composition, can be prepared by mixing the above-made filler composition with one or more polymer, polymer component, monomer or prepolymer.

Abstract: Insulating liquid. The liquid includes an ester liquid and an additive to the ester liquid having a lower ionization potential than the ionization potential of the ester liquid. In one aspect, conductive nanoparticles are also added.

Abstract: A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate 10 of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. A first active layer comprises source 12.1 and drain 12.2 conductors of colloidal silver ink, that are printed directly onto the paper substrate. A second active layer is an intrinsic semiconductor layer 14 of colloidal nanocrystalline silicon ink which is printed onto the first layer. A third active layer comprises a metallic conductor 16 of colloidal silver which is printed onto the second layer to form a gate electrode. This invention extends to other thin film semiconductors such as photovoltaic cells and to a method of manufacturing semiconductors.

Abstract: Various embodiments of the invention disclosed herein provide for adjusting the electrical response of a voltage switchable dielectric material by incorporating one or more nanophase materials. Various aspects provide for a VSDM having improved electrical and/or physical properties. In some cases, a VSDM may have improved (e.g., lower) leakage current at a given voltage. A VSDM may have improved resistance to ESD events, and may have improved resistance to degradation associated with protecting against an ESD event.

Abstract: A semiconductor device includes a gate insulation film that is formed of pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases lines with a high dielectric constant, which are dispersed in the amorphous matrix layer. The semiconductor device further includes a gate electrode that is provided on the gate insulation film.

Abstract: A nanocomposite material suitable for electrical insulation includes a polymer compounded with a substantially homogeneously distributed functionalized nanoparticle filler. The nanocomposite material is produced by compounding the polymer with the functionalized nanoparticle filler by imparting a shear force to a mixture of the polymer and filler capable of preventing agglomeration of the filler whereby the filler is substantially homogeneously distributed in the nanocomposite material. The electrical insulation may be adapted for AC or DC high voltage, and may also be adapted for low or medium voltage to prevent formation of water tree structures.

Abstract: A nonvolatile organic bistable memory device includes a substrate, a lower electrode disposed on the substrate, a lower charge injection layer disposed on the lower electrode, an insulating polymer layer including nanoparticles disposed on the lower charge injection layer, an upper charge injection layer disposed on the insulating polymer layer, and an upper electrode disposed on the upper charge injection layer. The lower and upper charge injection layers each include fullerenes and/or carbon nanotubes.

Abstract: A layer improves adhesion between interfaces of different components in semiconductor devices. The interface of a first component includes surfaces of a circuit carrier and the interface of a second component includes contact surfaces of a plastic package molding compound. The adhesion-improving layer includes a mixture of polymeric chain molecules and carbon nanotubes.

Abstract: Methods, apparatus and systems form memory structures, such as flash memory structures from nanoparticles by providing a source of nanoparticles as a conductive layer. The particles are moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation. The nanoparticles are deposited onto an insulating surface over a transistor in a first distribution of the nanoparticles. A field is applied to the nanoparticles on the surface that applies a force to the particles, rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. A protective and enclosing insulating layer is deposited on the nanoparticle second distribution. The addition of a top conductive layer completes a basic flash memory structure.

Abstract: The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution containing the colloidal nanoparticles when preparing the colloidal photonic crystals, a uniform volume contraction occurs due to the elasticity of the viscoelastic material even when a nonuniform volume contraction occurs while drying a dispersion medium in the colloidal solution. Thus, it is possible to prepare 2 or 3 dimensional colloidal photonic crystals of large scale with no defects in less time.

Abstract: Disclosed is an amplifying optical fiber having a central core and an optical cladding surrounding the central core. The central core is based on a silica matrix that includes nanoparticles, which are composed of a matrix material that includes doping ions of at least one rare earth element. The amplifying optical fiber can be employed, for example, in an optical amplifier and an optical laser.

Abstract: A CNT composite (10) includes a matrix (14) and a number of CNTs (12) embedded in the matrix. The matrix has a surface (102) and an opposite surface (104). Head portions of the respective CNTs are consistently oriented, parallel to the surfaces of the matrix. A method for manufacturing the composite includes (a) providing a substrate and depositing a catalyst film on the substrate; (b) forming the array of CNTs via the catalyst film on the substrate; (c) immersing the CNTs in a liquid matrix material, infusing the liquid matrix material into the array of CNTs; (d) taking the carbon nanotubes with the infused matrix out of the liquid matrix; (e) pressing the still-soft matrix and the CNTs therein, in order to arrange the CNTs consistently and parallel to the surfaces of the matrix; and (f) solidifying and peeling away the matrix to produce the CNT composite.

Abstract: A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

Abstract: Composite particles of a semiconductor particle such as a metal chalcogenide within a crosslinked, cored dendrimer are described. Additionally, methods of making the composite particles and compositions that contain the composite particles are described.

Abstract: A nanocomposite material suitable for electrical insulation includes a polymer compounded with a substantially homogeneously distributed functionalized nanoparticle filler. The nanocomposite material is produced by compounding the polymer with the functionalized nanoparticle filler by imparting a shear force to a mixture of the polymer and filler capable of preventing agglomeration of the filler whereby the filler is substantially homogeneously distributed in the nanocomposite material. The electrical insulation may be adapted for AC or DC high voltage, and may also be adapted for low or medium voltage to prevent formation of water tree structures.

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract: A microstrip line element is composed of a first electrode layer (10) as a substrate which is more of a metal, a dielectric layer (20) formed by oxidizing, nitriding or oxiynitriding the first electrode layer (10), a conductor layer (30) formed on the dielectric layer (20) and a second electrode layer (40) formed on the conductor layer (30). The conductor layer (30) is composed of at least conductive nanoparticles (32) and a binder resin (31).

Abstract: The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

Abstract: A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.

Abstract: According to embodiments of the present invention, a very thin thermal interface material (TIM) is developed, which is composed of carbon nanotubes, silicon thermal grease, and chloroform. The carbon nanotubes and chloroform comprise the filler and the silicone thermal grease comprises the matrix.

Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device.

Abstract: Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

Abstract: Provided is a chemical wet preparation method for Group 12-16 compound semiconductor nanocrystals. The method includes mixing one or more Group 12 metals or Group 12 precursors with a dispersing agent and a solvent followed by heating to obtain a Group 12 metal precursor solution; dissolving one or more Group 16 elements or Group 16 precursors in a coordinating solvent to obtain a Group 16 element precursor solution; and mixing the Group 12 metal precursors solution and the Group 16 element precursors solution to form a mixture, and then reacting the mixture to grow the semiconductor nanocrystals. The Group 12-16 compound semiconductor nanocrystals are stable and have high quantum efficiency and uniform sizes and shapes.

Abstract: A nanocomposite having enhanced energy conversion between thermal, electron, phonons, and photons energy states. The composition comprises a synergistic blend of nanoscale powders wherein the powders have nanoscale layered surface modifiers and a conductive medium. The powders and conductive medium are optionally altered through non-thermal modifiers and made into energy conversion devices.