Abstract: The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L1) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand L1 is represented by the following Formula 2: wherein a substituent R of the ligand L1 is hydrogen, or any one of an alkyl group, a cyclic alkyl group, an alkenyl group, an alkynyl group, and an amino group having a predetermined number of carbon atoms.