Search Patents
  • Publication number: 20150102465
    Abstract: Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
    Type: Application
    Filed: October 10, 2014
    Publication date: April 16, 2015
    Inventors: Robert Chen, James S. Harris, JR., Suyog Gupta
  • Patent number: 8748904
    Abstract: Low loss optical apertures are provided. A silicon intermediate layer sandwiched between a metal aperture layer and a dielectric layer has been found to offer a good combination of low optical loss combined with superior mechanical properties.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: June 10, 2014
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sonny Vo, James S. Harris, Jr.
  • Patent number: 9330907
    Abstract: Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: May 3, 2016
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Robert Chen, James S. Harris, Jr., Suyog Gupta
  • Publication number: 20160320373
    Abstract: Devices and methods for detecting the presence of one or more analytes, such as biomolecules (FIG. 2). An analyte detection device includes at least two conductive structures disposed between three insulating structures and a gap exists in the structures that defines a channel such that at least four electrodes capable of measuring an electrical property are present in the channel. Methods for improving analyte detector performance through low-salt buffer washes also are disclosed.
    Type: Application
    Filed: January 5, 2015
    Publication date: November 3, 2016
    Inventors: James S. HARRIS, Jr., Ronald W. DAVIS, Rahim ESFANDYARPOUR
  • Publication number: 20140239324
    Abstract: This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems.
    Type: Application
    Filed: February 26, 2013
    Publication date: August 28, 2014
    Applicants: The Board of Trustees of the Leland Standford Junior University, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Byung-Gook Park, James S. Harris, JR., Seongjae Cho
  • Patent number: 9014231
    Abstract: A vertical cavity surface emitting laser (VCSEL) nanoscope is provided. The VCSEL nanoscope combines a VCSEL with a nano-scale aperture using a support member to separate the aperture from the VCSEL emission face. The resulting device is a useful near-field probe with a wide variety of applications.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: April 21, 2015
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Sonny Vo, James S. Harris, Jr.
  • Publication number: 20150374269
    Abstract: Improved monitoring of one or more blood coagulation factors is provided. Factor-specific molecular probes having a dye-quencher arrangement are employed. In preferred embodiments, a compact integrated optical source and detector device is used for fluorescence measurements. Continuous and real-time monitoring of the activity of one or multiple blood factors is provided. Such real-time information can be used to automatically control delivery of drugs such as coagulants and/or blood thinners.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 31, 2015
    Inventors: Meredith M. Lee, Jelena Levi, James L. Zehnder, James S. Harris, JR.
  • Publication number: 20150047702
    Abstract: Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices.
    Type: Application
    Filed: November 3, 2014
    Publication date: February 19, 2015
    Inventors: Anjia Gu, Yijie Huo, Dong Liang, Yangsen Kang, James S. Harris, JR.
  • Patent number: 4227943
    Abstract: A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr.sub.0.4).sub.x. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n.sup.+ -type conductivity GaAs substrate.
    Type: Grant
    Filed: June 4, 1979
    Date of Patent: October 14, 1980
    Assignee: Rockwell International Corporation
    Inventors: Marshall J. Cohen, James S. Harris, Jr.
  • Patent number: 8847204
    Abstract: This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: September 30, 2014
    Assignees: Seoul National University R&DB Foundation, The Board of Trustees of the Leland Standford Junior University
    Inventors: Byung-Gook Park, James S. Harris, Jr., Seongjae Cho
  • Publication number: 20120286389
    Abstract: Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices.
    Type: Application
    Filed: May 11, 2012
    Publication date: November 15, 2012
    Inventors: Anjia Gu, Yijie Huo, Dong Liang, Yangsen Kang, James S. Harris, JR.
  • Patent number: 6067159
    Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
    Type: Grant
    Filed: February 22, 1999
    Date of Patent: May 23, 2000
    Assignee: Reliance Electric Industrial Company
    Inventors: Frederick M. Discenzo, James S. Harris
  • Patent number: 6111643
    Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
    Type: Grant
    Filed: October 28, 1997
    Date of Patent: August 29, 2000
    Assignee: Reliance Electric Industrial Company
    Inventors: Frederick M. Discenzo, James S. Harris
  • Patent number: 9986941
    Abstract: Improved monitoring of one or more blood coagulation factors is provided. Factor-specific molecular probes having a dye-quencher arrangement are employed. In preferred embodiments, a compact integrated optical source and detector device is used for fluorescence measurements. Continuous and real-time monitoring of the activity of one or multiple blood factors is provided. Such real-time information can be used to automatically control delivery of drugs such as coagulants and/or blood thinners.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 5, 2018
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Meredith M. Lee, Jelena Levi, James L. Zehnder, James S. Harris, Jr.
  • Patent number: 6273949
    Abstract: A method for fabricating gallium arsenide (GaAs) based structure groups with inverted crystallographic orientation to form wavelength converters that utilizes germanium as a crystallographic neutral template layer deposited on a GaAs substrate. A crystallographic inverted gallium arsenide layer is grown on top of the template layer. In a selective trench etching process areas of the substrate are exposed again for a consecutive collective deposition of GaAs.
    Type: Grant
    Filed: September 10, 1999
    Date of Patent: August 14, 2001
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Loren A. Eyres, Martin M. Fejer, Christopher B. Ebert, James S. Harris
  • Publication number: 20020075920
    Abstract: In an active region of an optical-electronic semiconductor device, nitrogen is incorporated in a barrier adjacent a GaNAs-based (e.g., GaInNAs) quantum well to improve device performance at wavelength bands above 1.2 microns. In a specific example embodiment, a mirror or cladding layer is grown over the active region in a manner that removes nitrogen complex otherwise present with Ga—N bonds in the active region. The embodiment can be implemented as one of a number of configurations including vertical cavity surface emitting lasers (VCSEL) and edge emitting lasers.
    Type: Application
    Filed: December 15, 2000
    Publication date: June 20, 2002
    Inventors: Sylvia Spruytte, Michael C. Larson, James S. Harris, Christopher Coldren
  • Patent number: 6359690
    Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
    Type: Grant
    Filed: February 16, 2000
    Date of Patent: March 19, 2002
    Assignee: Reliance Electric Technologies, LLC
    Inventors: Frederick M. Discenzo, James S. Harris
  • Publication number: 20030169797
    Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
    Type: Application
    Filed: June 19, 2002
    Publication date: September 11, 2003
    Inventors: Rafael I. Aldaz, Gordon A. Keeler, Vijit A. Sabnis, James S. Harris, David A.B. Miller
  • Publication number: 20090014061
    Abstract: A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.
    Type: Application
    Filed: July 8, 2008
    Publication date: January 15, 2009
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: James S. Harris, JR., Homan B. Yuen, Seth R. Bank, Mark A. Wistey, David B. Jackrel
  • Publication number: 20140041717
    Abstract: Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby simultaneously providing high optical absorption and high carrier collection efficiency. Double-sided nano-structuring is considered, where both surfaces of the active region are nano-structured. In cases where the active region is disposed on a substrate, nano-voids are present between the substrate and the active region, as opposed to the active region being conformally disposed on the substrate. The presence of such nano-voids advantageously increases both optical and electrical confinement in the active region.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 13, 2014
    Inventors: Dong Liang, Yijie Huo, Yangsen Kang, James S. Harris, JR.
Narrow Results

Filter by US Classification