Abstract: Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
Type:
Application
Filed:
October 10, 2014
Publication date:
April 16, 2015
Inventors:
Robert Chen, James S. Harris, JR., Suyog Gupta
Abstract: Low loss optical apertures are provided. A silicon intermediate layer sandwiched between a metal aperture layer and a dielectric layer has been found to offer a good combination of low optical loss combined with superior mechanical properties.
Type:
Grant
Filed:
February 4, 2013
Date of Patent:
June 10, 2014
Assignee:
The Board of Trustees of the Leland Stanford Junior University
Abstract: Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
Type:
Grant
Filed:
October 10, 2014
Date of Patent:
May 3, 2016
Assignee:
The Board of Trustees of the Leland Stanford Junior University
Inventors:
Robert Chen, James S. Harris, Jr., Suyog Gupta
Abstract: Devices and methods for detecting the presence of one or more analytes, such as biomolecules (FIG. 2). An analyte detection device includes at least two conductive structures disposed between three insulating structures and a gap exists in the structures that defines a channel such that at least four electrodes capable of measuring an electrical property are present in the channel. Methods for improving analyte detector performance through low-salt buffer washes also are disclosed.
Type:
Application
Filed:
January 5, 2015
Publication date:
November 3, 2016
Inventors:
James S. HARRIS, Jr., Ronald W. DAVIS, Rahim ESFANDYARPOUR
Abstract: This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems.
Type:
Application
Filed:
February 26, 2013
Publication date:
August 28, 2014
Applicants:
The Board of Trustees of the Leland Standford Junior University, SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Inventors:
Byung-Gook Park, James S. Harris, JR., Seongjae Cho
Abstract: A vertical cavity surface emitting laser (VCSEL) nanoscope is provided. The VCSEL nanoscope combines a VCSEL with a nano-scale aperture using a support member to separate the aperture from the VCSEL emission face. The resulting device is a useful near-field probe with a wide variety of applications.
Type:
Grant
Filed:
February 4, 2013
Date of Patent:
April 21, 2015
Assignee:
The Board of Trustees of the Leland Stanford Junior University
Abstract: Improved monitoring of one or more blood coagulation factors is provided. Factor-specific molecular probes having a dye-quencher arrangement are employed. In preferred embodiments, a compact integrated optical source and detector device is used for fluorescence measurements. Continuous and real-time monitoring of the activity of one or multiple blood factors is provided. Such real-time information can be used to automatically control delivery of drugs such as coagulants and/or blood thinners.
Type:
Application
Filed:
June 26, 2015
Publication date:
December 31, 2015
Inventors:
Meredith M. Lee, Jelena Levi, James L. Zehnder, James S. Harris, JR.
Abstract: Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices.
Type:
Application
Filed:
November 3, 2014
Publication date:
February 19, 2015
Inventors:
Anjia Gu, Yijie Huo, Dong Liang, Yangsen Kang, James S. Harris, JR.
Abstract: A solar cell is constructed by coating an n-type conductivity semiconductor with a thin layer of bromine doped, polymeric sulfur-nitride, (SNBr.sub.0.4).sub.x. Metal deposits are provided on both materials for making electrical contact to the cell. In a preferred embodiment, the semiconductor is silicon. In a second preferred embodiment, the semiconductor is GaAs on an n.sup.+ -type conductivity GaAs substrate.
Type:
Grant
Filed:
June 4, 1979
Date of Patent:
October 14, 1980
Assignee:
Rockwell International Corporation
Inventors:
Marshall J. Cohen, James S. Harris, Jr.
Abstract: This invention provides a germanium electroluminescence device and a fabricating method of the same for using germanium of an indirect bandgap semiconductor without modifying a bandgap as a light-emitting layer which emits a 1550 nm-wavelength light and enabling to use not only as infrared LEDs itself but also as light sources for optical communication systems.
Type:
Grant
Filed:
February 26, 2013
Date of Patent:
September 30, 2014
Assignees:
Seoul National University R&DB Foundation, The Board of Trustees of the Leland Standford Junior University
Inventors:
Byung-Gook Park, James S. Harris, Jr., Seongjae Cho
Abstract: Photovoltaic devices conformally deposited on a nano-structured substrate having hills and valleys have corresponding hills and valleys in the device layers. We have found that disposing an insulator in the valleys of the device layers such that the top electrode of the device is insulated from the device layer valleys provides beneficial results. In particular, this insulator prevents electrical shorts that otherwise tend to occur in such devices.
Type:
Application
Filed:
May 11, 2012
Publication date:
November 15, 2012
Inventors:
Anjia Gu, Yijie Huo, Dong Liang, Yangsen Kang, James S. Harris, JR.
Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
Abstract: Improved monitoring of one or more blood coagulation factors is provided. Factor-specific molecular probes having a dye-quencher arrangement are employed. In preferred embodiments, a compact integrated optical source and detector device is used for fluorescence measurements. Continuous and real-time monitoring of the activity of one or multiple blood factors is provided. Such real-time information can be used to automatically control delivery of drugs such as coagulants and/or blood thinners.
Type:
Grant
Filed:
June 26, 2015
Date of Patent:
June 5, 2018
Assignee:
The Board of Trustees of the Leland Stanford Junior University
Inventors:
Meredith M. Lee, Jelena Levi, James L. Zehnder, James S. Harris, Jr.
Abstract: A method for fabricating gallium arsenide (GaAs) based structure groups with inverted crystallographic orientation to form wavelength converters that utilizes germanium as a crystallographic neutral template layer deposited on a GaAs substrate. A crystallographic inverted gallium arsenide layer is grown on top of the template layer. In a selective trench etching process areas of the substrate are exposed again for a consecutive collective deposition of GaAs.
Type:
Grant
Filed:
September 10, 1999
Date of Patent:
August 14, 2001
Assignee:
The Board of Trustees of the Leland Stanford Junior
University
Inventors:
Loren A. Eyres, Martin M. Fejer, Christopher B. Ebert, James S. Harris
Abstract: In an active region of an optical-electronic semiconductor device, nitrogen is incorporated in a barrier adjacent a GaNAs-based (e.g., GaInNAs) quantum well to improve device performance at wavelength bands above 1.2 microns. In a specific example embodiment, a mirror or cladding layer is grown over the active region in a manner that removes nitrogen complex otherwise present with Ga—N bonds in the active region. The embodiment can be implemented as one of a number of configurations including vertical cavity surface emitting lasers (VCSEL) and edge emitting lasers.
Type:
Application
Filed:
December 15, 2000
Publication date:
June 20, 2002
Inventors:
Sylvia Spruytte, Michael C. Larson, James S. Harris, Christopher Coldren
Abstract: A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.
Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
Type:
Application
Filed:
June 19, 2002
Publication date:
September 11, 2003
Inventors:
Rafael I. Aldaz, Gordon A. Keeler, Vijit A. Sabnis, James S. Harris, David A.B. Miller
Abstract: A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.
Type:
Application
Filed:
July 8, 2008
Publication date:
January 15, 2009
Applicant:
The Board of Trustees of the Leland Stanford Junior University
Inventors:
James S. Harris, JR., Homan B. Yuen, Seth R. Bank, Mark A. Wistey, David B. Jackrel
Abstract: Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby simultaneously providing high optical absorption and high carrier collection efficiency. Double-sided nano-structuring is considered, where both surfaces of the active region are nano-structured. In cases where the active region is disposed on a substrate, nano-voids are present between the substrate and the active region, as opposed to the active region being conformally disposed on the substrate. The presence of such nano-voids advantageously increases both optical and electrical confinement in the active region.
Type:
Application
Filed:
August 9, 2013
Publication date:
February 13, 2014
Inventors:
Dong Liang, Yijie Huo, Yangsen Kang, James S. Harris, JR.