Search Patents
  • Ultra thin film nanostructured solar cell
    Publication number: 20140041717
    Abstract: Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby simultaneously providing high optical absorption and high carrier collection efficiency. Double-sided nano-structuring is considered, where both surfaces of the active region are nano-structured. In cases where the active region is disposed on a substrate, nano-voids are present between the substrate and the active region, as opposed to the active region being conformally disposed on the substrate. The presence of such nano-voids advantageously increases both optical and electrical confinement in the active region.
    Type: Application
    Filed: August 9, 2013
    Publication date: February 13, 2014
    Inventors: Dong Liang, Yijie Huo, Yangsen Kang, James S. Harris, JR.
  • INTEGRATION OF THIRD PARTY APPLICATION AS QUICK ACTIONS
    Publication number: 20240118790
    Abstract: A computer readable media, a method, and a system registering a third party application providing an available communication system between a local user and a remote user identity, storing information related to the available communication system in a first database, obtaining contact information for the remote user identity from the third party application, determining a communication type for the third party application, pairing the remote user identity with a contact, and updating a graphical representation of contact information.
    Type: Application
    Filed: September 25, 2023
    Publication date: April 11, 2024
    Inventors: Jeffrey D. Harris, Joseph H. Engel, Keith Stattenfield, John-Peter E. Cafaro, Colter S. Reed, Bruce M. Stadnyk, James C. Wilson, David A. McLeod, Alexander B. Brown
  • Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
    Patent number: 6521917
    Abstract: A group III-nitride quaternary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first InGaAlN layer of a first conduction type formed substantially without phase separation, an InGaAlN active layer substantially without phase separation, and a third InGaAlN layer of an opposite conduction type formed substantially without phase separation.
    Type: Grant
    Filed: March 26, 1999
    Date of Patent: February 18, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toru Takayama, Takaaki Baba, James S. Harris, Jr.
  • Nano-wire solar cell or detector
    Publication number: 20120006390
    Abstract: Solar cells or photodetectors having one or more single-crystal shell layers conformally deposited on Ge nano-wires are provided. This approach can provide higher efficiency and/or reduced material cost compared to conventional planar approaches for multi-junction solar cells having the same thickness of active solar absorption materials. Shell layers deposited on the Ge nano-wires and including pn junctions can be grown such that they end up with single-crystal faceted tips, which can significantly improve optical collection efficiency and can improve the electron collection efficiency because of the high crystal quality.
    Type: Application
    Filed: March 28, 2011
    Publication date: January 12, 2012
    Inventors: Yijie Huo, Anjia Gu, James S. Harris, JR., Shu Hu, Paul C. Mclntyre
  • Electrostatically tunable optical device and optical interconnect for processors
    Patent number: 5291502
    Abstract: A microlaser is described which is electrostatically tunable. One of the reflectors includes at least one reflecting part whose distance from the other reflector can be adjusted to change the effective optical distance between the reflectors and thus tune the optical frequency at which lasing occurs. The disclosure brings out that the inventive aspect is also applicable to other optical devices having reflectors defining a Fabry-Perot cavity. An optical interconnecting scheme for processors using the microlaser is also described.
    Type: Grant
    Filed: September 4, 1992
    Date of Patent: March 1, 1994
    Assignee: The Board of Trustees of the Leland Stanford, Jr. University
    Inventors: Bardia Pezeshki, James S. Harris, Jr.
  • GaInNAsSb solar cells grown by molecular beam epitaxy
    Publication number: 20090014061
    Abstract: A high efficiency triple-junction solar cell and method of manufacture therefor is provided wherein junctions are formed between different types of III-V semiconductor alloy materials, one alloy of which contains a combination of an effective amount of antimony (Sb) with gallium (Ga), indium (In), nitrogen (N, the nitride component) and arsenic (As) to form the dilute nitride semiconductor layer GaInNAsSb which has particularly favorable characteristics in a solar cell. In particular, the bandgap and lattice matching promote efficient solar energy conversion.
    Type: Application
    Filed: July 8, 2008
    Publication date: January 15, 2009
    Applicant: The Board of Trustees of the Leland Stanford Junior University
    Inventors: James S. Harris, JR., Homan B. Yuen, Seth R. Bank, Mark A. Wistey, David B. Jackrel
  • METAL-INSULATOR TRANSITION POINT BIOSENSOR
    Publication number: 20170010258
    Abstract: The invention relates to a novel biosensor, the metal-insulator transition (MIT) point biosensor, a non-expensive miniaturized device, having a small footprint and high sensitivity, which can measure molecular interactions or the presence of small amounts of molecules without the need for the molecules to be labeled. The sensor comprises a vanadium dioxide (V02) layer located between two metal measuring pads. The introduction of molecules of interest to the sensor surface results in changes in the oxide interface charge density that can be detected by a shift in the metal oxide transition point and differences in the amount of current passing through the oxide. The MIT biosensor is useful for the detection of charged molecules, including macromolecules, such as proteins or nucleic acids as well as other types of particles, such as cells, bacteria, or viruses.
    Type: Application
    Filed: February 20, 2015
    Publication date: January 12, 2017
    Inventors: Ronald W. Davis, Rahim Esfandyarpour, James S. Harris
  • Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication
    Patent number: 6229150
    Abstract: A group III-nitride quatenary material system and method is disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency and reliability. In an exemplary embodiment the semiconductor structure includes first GaAINAs layer of a first conduction type formed substantially without phase separation, an GaAINAs active layer substantially without phase separation, and a third GaAINAs layer of an opposite conduction type formed substantially without phase separation.
    Type: Grant
    Filed: July 30, 1999
    Date of Patent: May 8, 2001
    Assignee: Matsushita Electronics Corp.
    Inventors: Toru Takayama, Takaaki Baba, James S. Harris, Jr.
  • Ultra thin film nanostructured solar cell
    Patent number: 9379261
    Abstract: Improved solar cells are provided by nano-structuring the solar cell active region to provide high optical absorption in a thin structure, thereby simultaneously providing high optical absorption and high carrier collection efficiency. Double-sided nano-structuring is considered, where both surfaces of the active region are nano-structured. In cases where the active region is disposed on a substrate, nano-voids are present between the substrate and the active region, as opposed to the active region being conformally disposed on the substrate. The presence of such nano-voids advantageously increases both optical and electrical confinement in the active region.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: June 28, 2016
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Dong Liang, Yijie Huo, Yangsen Kang, James S. Harris, Jr.
  • Holographic optical processing method and apparatus
    Patent number: 4566757
    Abstract: A method and apparatus for performing optical processing on optical information corresponding to a subject (66) combines known optical processing techniques with holography. A reverse ray-trace holographic system is provided so that the image reconstruction beam (90) passes through the optical system in a direction exactly opposite to that travelled by the subject beam (50) during recording of the hologram (88). Aberrations introduced by the system optics are then completely compensated for, allowing use of lower quality optical components. A single large-aperture lens (68) is used to define a Fourier transform of the optical subject information as the hologram (88) is recorded or the image reconstructed, and the subject information is manipulated within the Fourier transform plane (91).
    Type: Grant
    Filed: September 23, 1983
    Date of Patent: January 28, 1986
    Assignee: University of Dayton
    Inventors: Richard L. Fusek, James S. Harris, Kevin G. Harding
  • High electron mobility transistor
    Patent number: 5270798
    Abstract: A high-electron mobility transistor or HEMT has a top surface layer between its gate and drain arranged to produce a channel to drain conductance that is close to the ungated channel conductance to lower the output conductance and reduce gate leakage and gate capacitance. The transistor has a high band-gap active layer to produce a 2DEG channel in an adjacent layer, and source, gate and drain electrodes on the active layer. An undoped or lightly doped surface layer in the region between the gate and the drain produces a low conductance for a region of a few hundred .ANG. from the drain-side edge of the gate. This spreads the electric field domain over at least this few hundred .ANG. distance.
    Type: Grant
    Filed: February 20, 1990
    Date of Patent: December 14, 1993
    Assignee: Varian Associates, Inc.
    Inventors: Yi-Ching Pao, James S. Harris
  • SILICON-BASED GE/SIGE OPTICAL INTERCONNECTS
    Publication number: 20090016666
    Abstract: SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the ? point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
    Type: Application
    Filed: September 19, 2006
    Publication date: January 15, 2009
    Inventors: Yu-Hsuan Kuo, James S. Harris, JR., David A.B. Miller
  • Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL)
    Patent number: 6628695
    Abstract: A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
    Type: Grant
    Filed: June 19, 2002
    Date of Patent: September 30, 2003
    Assignee: The board of trustees of the Leland Stanford Junior University
    Inventors: Rafael I. Aldaz, Gordon A. Keeler, Vijit A. Sabnis, James S. Harris, Jr., David A.B. Miller
  • Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication
    Patent number: 6472679
    Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAlNP material layer of an opposite conduction type formed substantially without phase separation.
    Type: Grant
    Filed: December 31, 1999
    Date of Patent: October 29, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toru Takayama, Takaaki Baba, James S. Harris, Jr.
  • Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation
    Patent number: 6472680
    Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNAs material system of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNAs material system substantially without phase separation, and a third ternary, quaternay or pentenary an InGaAlNAs material system of an opposite conduction type formed substantially without phase separation.
    Type: Grant
    Filed: December 31, 1999
    Date of Patent: October 29, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toru Takayama, Takaaki Baba, James S. Harris, Jr.
  • GaInNAsSb quantum well semiconductor devices
    Patent number: 6798809
    Abstract: In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths beyond 1.3 m. According to one aspect, Sb is used in, e.g. the active region of a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. Adding a small amount of Sb increases photoluminescence of the device while increasing the wavelength. Sb is used both as a surfactant, improving N and In incorporation into the active region, and an alloy constituent for red-shifting the wavelength of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with room temperature emission from 1.3 to 1.6 &mgr;m.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: September 28, 2004
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Vincent Gambin, Wonill Ha, James S. Harris
  • Excitable target marker detection
    Patent number: 7604981
    Abstract: A variety of types of molecules are detected and/or analyzed using an integrated micro-circuit arrangement. According to an example embodiment of the present invention, a micro-circuit arrangement detects excitable target markers in response to an excitation source. The excitation source emits a first electromagnetic radiation to excite one or more target markers into emitting a second electromagnetic radiation. The excitation source and detector combination can be optimized to detect a specific characteristic of a biological specimen. In this manner, an excitation source can be combined with several optical-detectors or detection channels, where each optical-detector is measuring or sensing the same or different characteristic of the biological specimen.
    Type: Grant
    Filed: March 7, 2003
    Date of Patent: October 20, 2009
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: James S. Harris, Jr., Stephen J. Smith, Evan P. Thrush, Ofer Levi
  • Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
    Patent number: 6903364
    Abstract: Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
    Type: Grant
    Filed: November 16, 1999
    Date of Patent: June 7, 2005
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toru Takayama, Takaaki Baba, James S. Harris, Jr.
  • Compact transform spectrometer based on sampling a standing wave
    Patent number: 6618150
    Abstract: A spectrometer for determining a spectrum of a light by using a mirror to reflect the light so that the light forms an intensity standing wave pattern through superposition of an incident portion of the light and a reflected portion of the light. The spectrometer is equipped with an intensity detector whose thickness is less than a shortest wavelength of the light being examined and which is semitransparent over the spectrum. The spectrometer has a mechanism to provide relative movement between the mirror and the intensity detector such that the intensity detector registers a variation of the intensity standing wave pattern. An analyzer, such as a Fourier transform analyzer, is employed to determine the spectrum of the light from that variation of the intensity standing wave pattern.
    Type: Grant
    Filed: August 16, 2001
    Date of Patent: September 9, 2003
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: James S. Harris, Jr., Helen L. Kung, David A. B. Miller
  • Thin buffer layers for SiGe growth on mismatched substrates
    Patent number: 7902046
    Abstract: Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: March 8, 2011
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Yu-Hsuan Kuo, James S. Harris, Jr.
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