Search Patents
  • Light emitting diode, and back light unit including the same
    Patent number: 8692451
    Abstract: Embodiments provide a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and a protective layer disposed at a side of the light emitting structure, and a first electrode formed on an outside of the protective layer.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: April 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee, June O Song, Kwang Ki Choi
  • LIGHT EMITTING DEVICE
    Publication number: 20150083995
    Abstract: Disclosed is a light emitting device package capable of improving luminous efficiency. The light emitting device includes a substrate; a first buffer layer on the substrate; a first insulating layer on the first buffer layer; a second buffer layer on the first insulating layer; a second insulating layer on the second buffer layer; a third buffer layer around the second buffer layer and the insulating layer; and a light emitting structure on the third buffer layer.
    Type: Application
    Filed: September 25, 2014
    Publication date: March 26, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jae Hoon CHOI, Young Jae CHOI, Ho Jun LEE
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8044380
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a “C (carbon)”-doped second nitride semiconductor layer formed above the active layer. According to the present invention, the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • LIGHT EMITTING DEVICE
    Publication number: 20120187369
    Abstract: Provided are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a substrate, a first semiconductor layer containing indium (In) over the substrate, and a light emitting structure over the first semiconductor layer. A dislocation mode is disposed on a top surface of the first semiconductor layer.
    Type: Application
    Filed: January 26, 2012
    Publication date: July 26, 2012
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jong Pil Jeong, Jung Hyun Hwang, Sang Hyun Lee, Se Hwan Sim, Sung Yi Jung
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM
    Publication number: 20110240958
    Abstract: A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer.
    Type: Application
    Filed: April 4, 2011
    Publication date: October 6, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Hoon JUNG
  • Light emitting device and manufacturing method thereof
    Patent number: 7989832
    Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Kyong Jun Kim
  • Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
    Publication number: 20140183449
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Application
    Filed: March 9, 2014
    Publication date: July 3, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Suk Hun Lee
  • Light emitting device
    Patent number: 9190566
    Abstract: Disclosed is a light emitting device package capable of improving luminous efficiency. The light emitting device includes a substrate; a first buffer layer on the substrate; a first insulating layer on the first buffer layer; a second buffer layer on the first insulating layer; a second insulating layer on the second buffer layer; a third buffer layer around the second buffer layer and the insulating layer; and a light emitting structure on the third buffer layer.
    Type: Grant
    Filed: September 25, 2014
    Date of Patent: November 17, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jae Hoon Choi, Young Jae Choi, Ho Jun Lee
  • Semiconductor light emitting device
    Patent number: 7732802
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate comprising a reflective pattern with a valley, a first nitride semiconductor layer on the substrate, an air gap formed between the reflective pattern and the first nitride semiconductor layer, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: June 8, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventors: Bum Chul Cho, Seung Hyun Yang
  • LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR
    Publication number: 20110062412
    Abstract: A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.
    Type: Application
    Filed: March 27, 2009
    Publication date: March 17, 2011
    Applicant: LG INNOTEK CO., LTD
    Inventor: June O Song
  • Light emitting device
    Patent number: 8643045
    Abstract: Disclosed is a light emitting structure comprising a first semiconductor layer, a substrate, a reflection electrode disposed on the substrate, a light transmitting electrode disposed on the reflection electrode, and a light emitting structure disposed on the light transmitting electrode, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layer. The light transmitting electrode has a thickness of 20 to 200 ?.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: February 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: SoJung Kim, HwanHee Jeong, DukHyun Park, JuneO Song, KwangKi Choi
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 7875874
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: January 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system
    Patent number: 9287465
    Abstract: A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: March 15, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8278646
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: October 2, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 8044385
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • LED with multilayer light extractor having a refractive index gradient
    Patent number: 9312445
    Abstract: The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: April 12, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Youn Joon Sung, Jung Hun Jang, Sung Hoon Jung
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140117310
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Application
    Filed: January 6, 2014
    Publication date: May 1, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Sung KANG, Hyo Kun SON
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7884350
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: February 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light-emitting element and a production method therefor
    Patent number: 8373152
    Abstract: A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • LIGHT-EMITTING DEVICE
    Publication number: 20140034904
    Abstract: A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer.
    Type: Application
    Filed: October 2, 2013
    Publication date: February 6, 2014
    Applicant: LG INNOTEK CO., LTD
    Inventors: Dae Sung KANG, Myung Hoon JUNG, Sung Hoon JUNG