Search Patents
  • Semiconductor light emitting device
    Patent number: 8106404
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a dot type conductive layer on the compound semiconductor layers; and an electrode layer on the dot type conductive layer.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: January 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jung Hyeok Bae
  • Semiconductor light emitting device
    Patent number: 8120042
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emitting structure comprises a plurality of compound semiconductor layers on the substrate.
    Type: Grant
    Filed: July 21, 2009
    Date of Patent: February 21, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sang Youl Lee, Sung Kyoon Kim, Hee Seok Choi
  • Semiconductor light emitting device
    Patent number: 9054258
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.
    Type: Grant
    Filed: March 7, 2013
    Date of Patent: June 9, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Sang Youl Lee
  • Nitride semiconductor and method for manufacturing thereof
    Patent number: 8013323
    Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: September 6, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Chul Choi
  • Light-emitting diode package and manufacturing method thereof
    Patent number: 8212274
    Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
    Type: Grant
    Filed: May 26, 2010
    Date of Patent: July 3, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Ho Shin
  • Nitride semiconductor and method for manufacturing thereof
    Patent number: 7834343
    Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: November 16, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Chul Choi
  • Semiconductor light emitting device
    Patent number: 8653545
    Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: February 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Ho Choo
  • Semiconductor light emitting device
    Patent number: 8610144
    Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: December 17, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Ho Choo
  • Light emitting device, method for manufacturing light emitting device, and light emitting apparatus
    Patent number: 7956376
    Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: June 7, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device
    Patent number: 8232577
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device and method of fabricating the same
    Patent number: 8138513
    Abstract: A light emitting device package comprises: a substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light emitting diode being electrically connected with the first and second conduction members; and a phosphor layer on the light emitting diode.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: March 20, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yu Ho Won, Geun Ho Kim
  • Light emitting device package and light emitting apparatus
    Patent number: 8618558
    Abstract: Disclosed are a light emitting device package and a light emitting apparatus. The light emitting device package comprises a package body comprising a light emitting surface inclined at an oblique angle with respect to a bottom surface, a plurality of lead electrodes in the package body, and at least one light emitting device electrically connected to the lead electrodes.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: December 31, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Kong
  • Light emitting device package and lighting system
    Patent number: 8835969
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: September 16, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Nitride semiconductor light-emitting device and method for manufacturing the same
    Patent number: 8378380
    Abstract: Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.
    Type: Grant
    Filed: March 2, 2007
    Date of Patent: February 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Yun Kim
  • Semiconductor element and a production method therefor
    Patent number: 8633508
    Abstract: A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0?x?2, 0?y?2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0?x, 0?y, x+y?1) over the first buffer layer.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: January 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Semiconductor light emitting device and fabrication method thereof
    Patent number: 8742429
    Abstract: A semiconductor light emitting device includes a first semiconductor layer having a bottom surface with uneven patterns, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, a second electrode formed on the second semiconductor layer, and a first electrode formed under the first semiconductor layer.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: June 3, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jin Sik Choi
  • Light emitting device package
    Patent number: 8643041
    Abstract: A light emitting device package is provided comprising a substrate, a light source unit disposed on the substrate and a dam unit spaced apart from the light source unit and disposed on the substrate, wherein the dam unit including silicon resin and metal oxide, and the metal oxide is contained in an amount of 5 wt % to 150 wt % based on a total amount of the silicon resin.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: February 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Gun Kyo Lee
  • Light emtting device, method for manufacturing light emitting device, and light emitting apparatus
    Patent number: 8168993
    Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: May 1, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device package and lighting system
    Patent number: 8530918
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: September 10, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Light emitting device and method of manufacturing the same
    Patent number: 8110849
    Abstract: A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer. The second conductive semiconductor layer is disposed on the active layer. The InNO layer is disposed on the second conductive semiconductor layer.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 7, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim