Search Patents
  • Light emitting device and manufacturing method of the same
    Patent number: 8134167
    Abstract: A light emitting device is provided. In the light emitting device, a multi-layer for intercepting a reverse voltage applied to an active layer is formed between the active layer and a GaN layer. Accordingly, the reliability and operational characteristic of the light emitting device can be improved.
    Type: Grant
    Filed: April 12, 2005
    Date of Patent: March 13, 2012
    Assignee: LG Innotek Co., Ltd
    Inventor: Hyo-Kun Son
  • Light emitting device and manufacturing method thereof
    Patent number: 8791480
    Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 8405101
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer divided in plurality on the first conductive type semiconductor layer, and a second conductive type semiconductor layer divided in plurality on the active layer.
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: March 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Hyun Lee
  • Semiconductor light emitting device
    Patent number: 8058661
    Abstract: A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure that is curved to protrude on the substrate and comprises an active layer.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: November 15, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sang Hoon Han, Kyung Jun Kim
  • Light emitting device with current blocking layer
    Patent number: 8624278
    Abstract: A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: January 7, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park
  • Semiconductor light emitting device
    Patent number: 8610144
    Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: December 17, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Ho Choo
  • Light emitting device, method for manufacturing light emitting device, and light emitting apparatus
    Patent number: 7956376
    Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: June 7, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device and light emitting device package
    Patent number: 9496457
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a substrate; a plurality of conductive dielectric nano rods spaced apart from each other on the substrate; light emitting structures on the conductive dielectric nano rods, respectively; and a carbon nano electrode layer on the light emitting structures.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: November 15, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jae Woong Choung
  • Semiconductor light emitting device
    Patent number: 9412908
    Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.
    Type: Grant
    Filed: July 13, 2012
    Date of Patent: August 9, 2016
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100059769
    Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.
    Type: Application
    Filed: July 17, 2008
    Publication date: March 11, 2010
    Applicant: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Semiconductor light emitting device
    Patent number: 8653545
    Abstract: A semiconductor light emitting device that includes a first conductive type semiconductor layer, a first electrode, a insulating layer, and an electrode layer. The first electrode has at least one branch on the first conductive type semiconductor layer. The insulating layer is disposed on the first electrode. The electrode layer is disposed on the insulating layer.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: February 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Woo Sik Lim, Sung Ho Choo
  • Semiconductor light emitting device
    Patent number: 8017965
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: September 13, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light emitting device and manufacturing method thereof
    Patent number: 8314436
    Abstract: Provided are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer with a lower surface being uneven in height, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: November 20, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Semiconductor light emitting device
    Patent number: 8232569
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a conductive supporting member, an N-type semiconductor layer on the conductive supporting member; an active layer on the N-type semiconductor layer, a P-type semiconductor layer on the active layer, an ohmic contact layer on the P-type semiconductor layer, and an electrode on the ohmic contact layer.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Ceramic phosphor plate and lighting device including the same
    Patent number: 9995458
    Abstract: Provided is a ceramic phosphor plate including a first phosphor layer containing a short-wave phosphor in a transparent ceramic matrix and a second phosphor layer containing a long-wave phosphor, thereby enabling the reduction of a production cost by reducing an amount used of the high-priced long-wave phosphor (red phosphor).
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: June 12, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jin Gyeong Park, Won Jin Kim, In Jae Lee
  • Nitride semiconductor light-emitting device
    Patent number: 9123862
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: September 1, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dae Sung Kang
  • Nitride semiconductor light-emitting device
    Patent number: 8253151
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer.
    Type: Grant
    Filed: January 25, 2007
    Date of Patent: August 28, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dae Sung Kang
  • Light emtting device, method for manufacturing light emitting device, and light emitting apparatus
    Patent number: 8168993
    Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: May 1, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Semiconductor light emitting device having multiple single crystalline buffer layers
    Patent number: 7994520
    Abstract: Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer.
    Type: Grant
    Filed: November 24, 2008
    Date of Patent: August 9, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyong Jun Kim
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 9190567
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: November 17, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Suk Hun Lee