Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of increasing light extraction efficiency, are disclosed. The method includes forming a light extraction layer on a substrate, forming a plurality of semiconductor layers on the light extraction layer, forming a first electrode on the semiconductor layers, forming a support layer on the first electrode, removing the substrate, and forming a second electrode on a surface from which the substrate is removed.

Abstract: A sub-amount for mounting a light emitting device and a light emitting device package using the sub-mount are disclosed. The light emitting device package includes a package body having a mount for mounting a light emitting device, and through holes, electrodes formed on the package body, and a reflective layer arranged on one of the electrodes formed on an upper surface of the package body. The reflective layer has openings for enabling the light emitting device to be coupled to the electrodes.

Abstract: A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Abstract: A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Abstract: A lead frame and a light emitting device package using the same are disclosed. More particularly, a lead frame and a light emitting device package using the lead frame which can be easily manufactured and employ a multi-chip structure. The light emitting device package includes a first frame including a heat sink, a second frame coupled to an upper side of the first frame, the second frame including at least one pair of leads and a mount formed with a hole, and a molded structure for coupling the first and second frames to each other.

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.

Abstract: A light emitting device having a vertical structure and a method for manufacturing the same, which are capable of damping impact generated during a substrate separation process and achieving an improvement in mass productivity, are disclosed. The light emitting device includes a semiconductor layer having a multilayer structure, a first electrode arranged at one surface of the semiconductor layer, a metal support arranged on the first electrode, and an impact damping layer arranged between the first electrode and the metal support, and made of a metal having a ductility higher than a ductility of a metal for the metal support.

Abstract: A light emitting device having a light extraction structure, which is capable of achieving an enhancement in light extraction efficiency and reliability, and a method for manufacturing the same. The light emitting device includes a semiconductor layer having a multi-layered structure including a light emission layer; and a light extraction structure formed on the semiconductor layer in a pattern having unit structures. Further, the wall of each of the unit structures is sloped at an angle of ?45° to +45° from a virtual vertical line being parallel to a main light emitting direction of the light emitting device.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: An embodiment relates to a light emitting module, a light emitting module manufacturing method, a light emitting cabinet, and a display device. The display device of an embodiment includes: a support frame; and a plurality of light emitting cabinets including a plurality of light emitting modules disposed on the support frame, wherein the plurality of light emitting modules may include a substrate, a plurality of light emitting units directly mounted on the substrate, and a black matrix disposed on the substrate to surround each of the plurality of light emitting units. The embodiment may implement uniform color and uniform brightness by providing a light emitting module providing full color, and may implement slimness and high brightness by simplifying a configuration of the light emitting module in a chip on board (COB) type. The embodiment may implement low power driving and improve productivity and yield by simplifying the configuration of the light-emitting module.

Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resin layer on the light emitting diode, and a primer layer containing a metal material on the resin layer.

Abstract: A wafer substrate bonding structure may be provided that includes: a first substrate; and a conductive thin film which is disposed on the first substrate and includes a resin and conductive corpuscles included in the resin.

Abstract: A light emitting device package comprises a substrate, an electrode on the substrate, a light emitting device on the substrate and electrically connected to the electrode layer, and a pattern enclosing the light emitting device.

Abstract: An embodiment of this invention relates to a light emitting device. The light emitting device disclosed in the embodiment includes: a reflective layer, and a semiconductor layer which includes an emissive layer on said reflective layer, wherein the distance from the reflective layer to the center of the emissive layer corresponds to a constructive interference condition.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a body, an insulating layer over a surface of the body, at least one electrode over the insulating layer, a light emitting diode connected to the electrode, and a reflective layer over the insulating layer.