Abstract: A light emitting device includes at least one layer below or above a reflective layer to prevent delamination of the reflective layer from a layer below and/or above the reflective layer.
Abstract: A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.
Abstract: A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer.
Abstract: Provided are a lighting device and a lighting system having the same. The lighting device includes a board having a recess, a lead frame disposed in the recess and including a first lead frame protrusion protruding upward, and a light emitting device disposed on the lead frame.
Abstract: Disclosed is a semiconductor light emitting device. The light emitting device includes a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a first electrode pad including a plurality of reflective layers on the first conductive type semiconductor layer.
Type:
Grant
Filed:
February 5, 2013
Date of Patent:
February 9, 2016
Assignee:
LG INNOTEK CO., LTD.
Inventors:
Geun Ho Kim, Sung Kyoon Kim, Hee Seok Choi
Abstract: A wafer substrate bonding structure may be provided that includes: a first substrate; and a conductive thin film which is disposed on the first substrate and includes a resin and conductive corpuscles included in the resin.
Abstract: Disclosed are a light emitting apparatus and a lighting system. The light emitting apparatus includes a body, a first electrode having a protrusion pattern on the body, a second electrode electrically separated from the first electrode on the body, an adhesive layer on the first electrode including the protrusion pattern, and a light emitting device on the adhesive layer.
Abstract: A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer.
Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Abstract: A light emitting device includes a light emitting structure below a substrate, in which at least one first contact area and at least one second contact area are defined. A plurality of layers having mutually different refractive indexes is provided below the light emitting structure.
Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
Abstract: Disclosed is a light emitting device including a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer, a phosphor plate disposed on the second semiconductor layer, and a bonding portion disposed between the light emitting structure and the phosphor plate, the bonding portion bonding the phosphor plate to the light emitting structure.
Abstract: Disclosed is a light emitting device package. The light emitting device package includes a body part provided therein with a cavity, a light emitting chip in the cavity, a cover part to cover the cavity, and a light conversion part provided on a bottom surface of the cover part while being separated from the light emitting chip.
Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
Abstract: Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
Type:
Application
Filed:
April 17, 2008
Publication date:
April 29, 2010
Applicant:
LG INNOTEK CO., LTD.
Inventors:
Sung Min Kong, Choong Youl Kim, Hee Seok Choi
Abstract: Disclosed is a light emitting device. The light emitting device includes a body, a plurality of electrodes in the body, a light emitting chip installed in the body and electrically connected to the electrodes to generate light, and a thermo electric cooler module electrically connected to the electrodes and formed at a lower portion of the light emitting chip to cool the light emitting chip.
Abstract: Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.
Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.