Search Patents
  • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20100059769
    Abstract: A method of manufacturing a light emitting device is provided. An epitaxial layer is first formed at a plurality of separated regions on a substrate and a second electrode layer is formed on the epitaxial layer. Subsequently, the substrate is removed from the epitaxial layer and a first electrode layer is formed under the epitaxial layer, after which the second electrode layer is divided into chip units.
    Type: Application
    Filed: July 17, 2008
    Publication date: March 11, 2010
    Applicant: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Nitride semiconductor and method for manufacturing thereof
    Patent number: 8013323
    Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
    Type: Grant
    Filed: December 4, 2009
    Date of Patent: September 6, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Chul Choi
  • Nitride semiconductor and method for manufacturing thereof
    Patent number: 7834343
    Abstract: A P-type nitride semiconductor and a method for manufacturing the same are provided. A nitride semiconductor includes a P-type nitride layer formed on a active layer, wherein the P-type nitride layer is a P-type nitride layer with the group 4 element doped.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: November 16, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Chul Choi
  • SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20100219439
    Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate, a first semiconductor layer on substrate, an air-gap part disposed in at least portion between the substrate and the first semiconductor layer, and a plurality of compound semiconductor layers comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the first semiconductor layer.
    Type: Application
    Filed: March 1, 2010
    Publication date: September 2, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Sung Kyoon KIM
  • Light emitting device package and lighting system
    Patent number: 8835969
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: September 16, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Light emitting device package
    Patent number: 8643041
    Abstract: A light emitting device package is provided comprising a substrate, a light source unit disposed on the substrate and a dam unit spaced apart from the light source unit and disposed on the substrate, wherein the dam unit including silicon resin and metal oxide, and the metal oxide is contained in an amount of 5 wt % to 150 wt % based on a total amount of the silicon resin.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: February 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Gun Kyo Lee
  • Light emitting device package and lighting system
    Patent number: 8530918
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: September 10, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Method for manufacturing light emitting device using non-polar substrate
    Patent number: 8017414
    Abstract: A method for manufacturing a light emitting device includes preparing a substrate where a crystal growth surface has an a-plane or an m-plane; forming a buffer layer on the substrate; forming a semiconductor layer on the buffer layer; and separating the semiconductor layer from the substrate by removing the buffer layer.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: September 13, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Ryong Cho
  • Light emitting device and manufacturing method thereof
    Patent number: 7989832
    Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Kyong Jun Kim
  • Semiconductor light emitting device including first conductive type clad layer
    Patent number: 8823047
    Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type clad layer having a composition ratio of aluminum increased at a predetermined rate, an active layer on the first conductive type clad layer, and a second conductive type semiconductor layer on the active layer.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: September 2, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Hoon Han
  • Nitride semiconductor light-emitting device and method for manufacturing the same
    Patent number: 8378380
    Abstract: Provided are a nitride semiconductor light-emitting device and a method for manufacturing the same, capable of improving light emitting efficiency by forming a reflection layer on a lateral side of an LED chip. An embodiment provides a nitride semiconductor light-emitting device includes a light-emitting device chip and a reflection layer. The reflection layer is formed on a lateral side of the light-emitting device chip.
    Type: Grant
    Filed: March 2, 2007
    Date of Patent: February 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Yun Kim
  • Light emitting device and method of manufacturing the same
    Patent number: 8110849
    Abstract: A light emitting device is provided. The light emitting device comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an InNO layer. The active layer is disposed on the first conductive semiconductor layer. The second conductive semiconductor layer is disposed on the active layer. The InNO layer is disposed on the second conductive semiconductor layer.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 7, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Light emitting device, light emitting device package, and lighting system
    Patent number: 8669586
    Abstract: A light emitting device includes a first electrode, a first semiconductor layer, an active layer; a second semiconductor layer, and a second electrode. A current blocking layer is formed on a side surface of and has a width provided within the first semiconductor layer. The thickness and width of the current blocking layer is smaller than the thickness and width of the first semiconductor layer.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: March 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Min Hwang, Hyun Kyong Cho
  • Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
    Patent number: 8680569
    Abstract: A light emitting device comprises a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
    Type: Grant
    Filed: January 20, 2012
    Date of Patent: March 25, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Semiconductor element and a production method therefor
    Patent number: 8633508
    Abstract: A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0?x?2, 0?y?2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0?x, 0?y, x+y?1) over the first buffer layer.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: January 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Nitride semiconductor light-emitting device and method for manufacturing the same
    Patent number: 8030680
    Abstract: Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer through delta-doping, and a second nitride layer on the active layer.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: October 4, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae-Yun Kim
  • Method for fabricating light emitting device
    Patent number: 8349743
    Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: January 8, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Semiconductor device and method of manufacturing the same
    Patent number: 9401405
    Abstract: A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.
    Type: Grant
    Filed: April 29, 2014
    Date of Patent: July 26, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jung Hun Jang
  • Light emitting device package
    Patent number: 8610255
    Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.
    Type: Grant
    Filed: July 4, 2008
    Date of Patent: December 17, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yu Ho Won, Geun Ho Kim
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 7875874
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first semiconductor layer emitting electrons, a second semiconductor layer emitting holes, and an active layer emitting light by combination of the electrons and holes. At least one of the layers comprises an photo enhanced minority carriers.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: January 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim