Search Patents
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8530882
    Abstract: A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting structure. A filling factor, which is an area ratio of the first electrode relative to an area of a top surface of the light emitting structure, may be 20% or less.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: September 10, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jeung Mo Kang, Sun Kyung Kim
  • Light emitting device
    Patent number: 8759853
    Abstract: Disclosed is a light emitting device including a substrate, a first buffer layer disposed on the substrate, the first buffer layer comprising aluminum nitride (AlN), an insertion layer disposed on the first buffer layer, the insertion layer comprising aluminum (Al), and a light emitting structure disposed on the insertion layer, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first semiconductor layer and the second semiconductor layer.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: June 24, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Seungkeun Nam, Junghun Jang, Jeongsik Lee
  • LIGHT-EMITTING DEVICE
    Publication number: 20140034904
    Abstract: A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer.
    Type: Application
    Filed: October 2, 2013
    Publication date: February 6, 2014
    Applicant: LG INNOTEK CO., LTD
    Inventors: Dae Sung KANG, Myung Hoon JUNG, Sung Hoon JUNG
  • Apparatus and method for driving LED
    Patent number: 7791498
    Abstract: Provided are an apparatus and method for driving LEDs. The apparatus comprise a plurality of red, green, and blue light emitting diodes connected, respectively; switching units turned on or off by an inputted pulse to turn on or off the red, green and blue light emitting diodes, respectively; and a control unit outputting respective pulses to sequentially delay a turn-on or turn-off time between the switching units.
    Type: Grant
    Filed: January 10, 2007
    Date of Patent: September 7, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Seong Soo Park
  • Light-emitting device and light-emitting device package
    Patent number: 9385270
    Abstract: A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a blocking layer on the active layer; and a second conductive semiconductor layer on the blocking layer, wherein the active layer comprises a plurality of quantum well layers and quantum barrier layers, and the quantum well layer is formed from InxGaYNInxGayN (0.11?x?0.14, 0<x+y?1).
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: July 5, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • Light emitting device
    Patent number: 8441025
    Abstract: A light emitting device is provided. The light emitting device may include a reflective layer having a prescribed pattern of at least one shape having prescribed thickness, width and periodicity. The light emitting device may also include a light emitting layer formed on the reflective layer. The prescribed periodicity may be based on 0.75?/n to 5?/n, where ? is the wavelength of the light emitted from the light emitting layer, and n is the refractive index of the light emitting layer.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: May 14, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Light emitting device and light emitting device package
    Patent number: 8441027
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a substrate including a plurality of patterns, each pattern including three protrusion parts, a plurality of spaces formed between the patterns, and a light emitting device structure over the patterns and the spaces. Each space includes a medium having a refractive index different from a refractive index of the light emitting device structure.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: May 14, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Chang Bae Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8969849
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: March 9, 2014
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Light emitting device, light emitting device package, and lighting system
    Patent number: 8878158
    Abstract: A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer.
    Type: Grant
    Filed: April 4, 2011
    Date of Patent: November 4, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Myung Hoon Jung
  • Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof
    Publication number: 20080142781
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Application
    Filed: December 5, 2005
    Publication date: June 19, 2008
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Suk Hun Lee
  • Light emitting device package
    Patent number: 8410513
    Abstract: Provided is a light emitting device package. The light emitting device package comprises a first conductive type package body, an insulating layer comprising an opening on the package body, a plurality of compound semiconductor layers disposed on the package body through the opening of the insulating layer, an electrode electrically connected to the plurality of compound semiconductor layers, a first metal layer electrically connected to the package body and disposed on a part of the insulating layer, and a second metal layer electrically connected to the electrode and disposed on the other part of the insulating layer.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: April 2, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bum Chul Cho
  • Light emitting device
    Patent number: 7947972
    Abstract: Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: May 24, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong-Tae Moon
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8674340
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • LIGHT EMITTING DEVICE AND LIGHTING SYSTEM
    Publication number: 20140361246
    Abstract: A light emitting device includes a first conductive semiconductor layer (112), an active layer (114) including a quantum well (114w) and a quantum barrier (114b) on the first conductive semiconductor layer (112). An undoped last barrier layer (127) is provided on the active layer (114), and an AlxInyGa(1-x-y)N (0?x?1, 0?y?1)-based layer (128) is provided on the undoped last barrier layer (127). A second conductive semiconductor layer (116) is provided on the AlxInyGa(1-x-y)N-based layer (128).
    Type: Application
    Filed: June 10, 2014
    Publication date: December 11, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Yong Tae MOON, Hyun Chul Lim
  • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20110121261
    Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
    Type: Application
    Filed: December 29, 2010
    Publication date: May 26, 2011
    Applicant: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 7791062
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: September 7, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 8946677
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: February 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Dae Sung Kang, Hyo Kun Son
  • Light emitting device, light emitting device package, and lighting system
    Patent number: 8575635
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting structure being disposed on the substrate, a nonmetal pattern disposed between the substrate and the active layer, the nonmetal pattern being spaced from the substrate, and an air gap disposed on a side surface of the nonmetal pattern.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: November 5, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jong Hak Won, Sun Kyung Kim, Kyoung Woo Jo, Joong Seo Park
  • Light emitting device and light emitting device package
    Patent number: 9112092
    Abstract: Disclosed is a light emitting device and a light emitting device package. The light emitting device includes a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer, wherein the active layer includes: a plurality of barrier layers; and a plurality of well layers between the barrier layers, and wherein at least two of the barrier layers have different energy bandgaps and have different thicknesses.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: August 18, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Hak Won, Heon Jin Seo, Kwang Sun Baek
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8030639
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: October 4, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee