Search Patents
  • Light emitting device
    Patent number: 8319227
    Abstract: A light emitting device (LED) is provided. The LED comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer is on the first conductivity type semiconductor layer. The second conductivity type semiconductor layer is on at least one side of the active layer and the first conductivity type semiconductor layer, and on the active layer.
    Type: Grant
    Filed: June 22, 2009
    Date of Patent: November 27, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyun Kyong Cho
  • Semiconductor light emitting device
    Patent number: 8969902
    Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park
  • Light emitting device
    Patent number: 8384110
    Abstract: A lighting emitting device includes a conductive substrate; a first conductive layer formed on the conductive substrate; a second conductive layer formed on the first conductive layer; a second semiconductor layer formed on the second conductive layer; an active layer formed on the second semiconductor layer; a first semiconductor layer being formed on the active layer and including a charge distribution layer; and an insulation layer.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: February 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jae Wook Kim
  • LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090321748
    Abstract: Provided are a light emitting diode and a method for manufacturing the same. In the method, a semiconductor layer is formed, and a mask layer is formed on the semiconductor layer. Laser is irradiated onto a scribing region of the mask layer to divide the semiconductor layer into a plurality of light emitting diodes. The scribing region is etched, and then the mask layer is removed. The plurality of light emitting diodes are then separated from each other.
    Type: Application
    Filed: September 20, 2007
    Publication date: December 31, 2009
    Applicant: LG INNOTEK CO., LTD
    Inventor: Sang Youl Lee
  • Light emitting device with vertically adjustable light emitting pattern
    Patent number: 8618563
    Abstract: A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: December 31, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sun Kyung Kim, Hyun Don Song, Jin Wook Lee
  • Light emitting device and manufacturing method thereof
    Patent number: 7989832
    Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Kyong Jun Kim
  • Method for fabricating light emitting device
    Patent number: 8349743
    Abstract: Disclosed is a method for fabricating a light emitting device. The method includes forming an oxide including gallium aluminum over a gallium oxide substrate, forming a nitride including gallium aluminum over the oxide including gallium aluminum and forming a light emitting structure over the nitride including gallium aluminum.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: January 8, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • LIGHT EMITTING DEVICE
    Publication number: 20110316004
    Abstract: The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 ?m or less.
    Type: Application
    Filed: June 29, 2011
    Publication date: December 29, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Hosang YOON, Daesung KANG, Jinsoo PARK
  • Light emitting device, light emitting device package and lighting system including the same
    Patent number: 8552443
    Abstract: Provided are a light emitting device, a light emitting device package and a lighting system comprising the same. The light emitting device comprises a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and an anti-reflection region on a lateral surface of the light emitting structure.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: October 8, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jeong Hyeon Choi, Jae Wook Kim, Jeung Mo Kang, Du Hyun Kim
  • Light emitting diode and method for manufacturing the same
    Patent number: 8404566
    Abstract: Provided are a light emitting diode and a method for manufacturing the same. In the method, a semiconductor layer is formed, and a mask layer is formed on the semiconductor layer. Laser is irradiated onto a scribing region of the mask layer to divide the semiconductor layer into a plurality of light emitting diodes. The scribing region is etched, and then the mask layer is removed. The plurality of light emitting diodes are then separated from each other.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: March 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Light emitting device
    Patent number: 8431938
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: April 30, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Light emitting device and light emitting device package
    Patent number: 8441027
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a substrate including a plurality of patterns, each pattern including three protrusion parts, a plurality of spaces formed between the patterns, and a light emitting device structure over the patterns and the spaces. Each space includes a medium having a refractive index different from a refractive index of the light emitting device structure.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: May 14, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Chang Bae Lee
  • Light emitting device and light emitting device package
    Patent number: 9099610
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a third semiconductor layer between the active layer and the second conductive semiconductor layer, and a light extraction structure on the second conductive semiconductor layer. A top surface of the third semiconductor layer has a Ga-face.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: August 4, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Ji Hyung Moon
  • Light emitting device
    Patent number: 8421089
    Abstract: A light emitting device includes a substrate, a first lead frame and a second lead frame on the substrate, an installation portion electrically connected to the first lead frame or the second lead frame, the installation portion being thinner than the first lead frame or the second lead frames, a light emitting diode on the installation portion, and a conductive member electrically connecting at least one of the lead frames to the light emitting diode.
    Type: Grant
    Filed: August 11, 2008
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Wan Ho Kim
  • Nitride semiconductor light emitting device and method for fabricating the same
    Patent number: 8093625
    Abstract: Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: January 10, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8674340
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 8044385
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Semiconductor light-emitting device
    Patent number: 8766308
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: July 1, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Woo Sik Lim
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7884350
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: February 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light emitting device and lighting apparatus having crystal control layer
    Patent number: 8937320
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an active layer disposed on the n-type semiconductor layer in the first area; an electron barrier layer disposed on the active layer in the first area; and a p-type semiconductor layer disposed on the electron barrier layer in the first area.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: January 20, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim