Search Patents
  • Nitride semiconductor light emitting device and method for fabricating the same
    Patent number: 8093625
    Abstract: Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: January 10, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Light emitting device and manufacturing method thereof
    Patent number: 7989832
    Abstract: Disclosed are a light emitting device and a manufacturing method thereof. The light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor, a second conductive semiconductor layer on the active layer, and a dot-shaped roughness layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: September 17, 2007
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd
    Inventor: Kyong Jun Kim
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM
    Publication number: 20130334550
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Application
    Filed: August 16, 2013
    Publication date: December 19, 2013
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Ho Sang YOON, Sang Kyun SHIM
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140117310
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Application
    Filed: January 6, 2014
    Publication date: May 1, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Sung KANG, Hyo Kun SON
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 8178887
    Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
    Type: Grant
    Filed: January 11, 2011
    Date of Patent: May 15, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventors: Tae Yun Kim, Hyo Kun Son
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8674340
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7884350
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: February 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7700961
    Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
    Type: Grant
    Filed: August 26, 2008
    Date of Patent: April 20, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventors: Tae Yun Kim, Hyo Kun Son
  • Semiconductor light emitting device having roughness and method of fabricating the same
    Patent number: 7829881
    Abstract: A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ho Sang Yoon
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7888693
    Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.
    Type: Grant
    Filed: March 1, 2010
    Date of Patent: February 15, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Tae Yun Kim, Hyo Kun Son
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 8044385
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, a lower super lattice layer under the first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive super lattice layer on the active layer, and a second conductive semiconductor layer on the second conductive super lattice layer.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8373190
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 8237181
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: August 7, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventors: Dae Sung Kang, Hyo Kun Son
  • Semiconductor light emitting device having conductive substrate
    Patent number: 8232570
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 7791062
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: September 7, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 7755094
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a substrate, a mask seed layer formed on the substrate and comprising a II group element, a nitride layer formed on the mask seed layer and comprising a III group element, a first conductive semiconductor layer on the nitride layer, an active layer on the first conductive layer, and a second conducive semiconductor layer on the active layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: July 13, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyung Jun Kim, Hyo Kun Son
  • Semiconductor light emitting device and method of fabricating the same
    Patent number: 7989820
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8222660
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: July 17, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device
    Patent number: 9018652
    Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer; and a nitride semiconductor layer having a refractive index less than a refractive index of the second conductive semiconductor layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: April 28, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jong Pil Jeong, Jung Hyun Hwang, Chong Cook Kim
  • Semiconductor light emitting device and a method of manufacturing the same
    Patent number: 7902557
    Abstract: Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: March 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jo Young Lee