Search Patents
  • Patent number: 8247829
    Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resistor integrated on the body and configured to sense a temperature of the light emitting diode, and a plurality of metal layers on the body.
    Type: Grant
    Filed: September 25, 2009
    Date of Patent: August 21, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Geun Ho Kim
  • Patent number: 8089087
    Abstract: A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: January 3, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 9024347
    Abstract: Disclosed are an epoxy resin composition and a light emitting apparatus. The epoxy resin composition includes a triazine derivative epoxy resin and an alicyclic epoxy resin.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: May 5, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Bae Moon, Jae Hun Jeong, Sang In Yoon
  • Publication number: 20100133567
    Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
    Type: Application
    Filed: May 21, 2008
    Publication date: June 3, 2010
    Applicant: LG INNOTEK CO., LTD
    Inventor: Hyo Kun Son
  • Patent number: 9000468
    Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
    Type: Grant
    Filed: July 25, 2013
    Date of Patent: April 7, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Myung Cheol Yoo
  • Publication number: 20140077242
    Abstract: Disclosed is a light emitting device including a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer, a phosphor plate disposed on the second semiconductor layer, and a bonding portion disposed between the light emitting structure and the phosphor plate, the bonding portion bonding the phosphor plate to the light emitting structure.
    Type: Application
    Filed: March 14, 2013
    Publication date: March 20, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Gun Kyo LEE
  • Patent number: 8563997
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.
    Type: Grant
    Filed: August 13, 2012
    Date of Patent: October 22, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Publication number: 20110186894
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.
    Type: Application
    Filed: February 3, 2011
    Publication date: August 4, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Sun Kyung KIM
  • Patent number: 7915628
    Abstract: A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: March 29, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hee Jin Kim
  • Publication number: 20110260186
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.
    Type: Application
    Filed: February 16, 2011
    Publication date: October 27, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Hwan Hee Jeong
  • Publication number: 20110180830
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.
    Type: Application
    Filed: October 21, 2010
    Publication date: July 28, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jung Ha HWANG, Kyoung Woo JO
  • Publication number: 20140346547
    Abstract: Disclosed is a light emitting device package. The light emitting device package includes a body part provided therein with a cavity, a light emitting chip in the cavity, a cover part to cover the cavity, and a light conversion part provided on a bottom surface of the cover part while being separated from the light emitting chip.
    Type: Application
    Filed: August 3, 2012
    Publication date: November 27, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Seung Ryong Park
  • Publication number: 20110062467
    Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.
    Type: Application
    Filed: March 24, 2009
    Publication date: March 17, 2011
    Applicant: LG Innotek Co., Ltd.
    Inventor: June O. Song
  • Patent number: 8796717
    Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
    Type: Grant
    Filed: June 13, 2012
    Date of Patent: August 5, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Ho Shin
  • Patent number: 8263989
    Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
    Type: Grant
    Filed: May 1, 2009
    Date of Patent: September 11, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hung Seob Cheong
  • Patent number: 7745844
    Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: June 29, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Ho Shin
  • Publication number: 20100102345
    Abstract: Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
    Type: Application
    Filed: April 17, 2008
    Publication date: April 29, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Sung Min Kong, Choong Youl Kim, Hee Seok Choi
  • Publication number: 20110012150
    Abstract: A light-emitting device comprises a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a nonconductive semiconductor layer on the first conductive type semiconductor layer, the nonconductive semiconductor layer comprising a light extraction structure.
    Type: Application
    Filed: August 26, 2008
    Publication date: January 20, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Sun Kyung Kim, Hyun Kyong Cho
  • Publication number: 20140077245
    Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.
    Type: Application
    Filed: November 22, 2013
    Publication date: March 20, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: YU HO WON, GEUN HO KIM
  • Patent number: 8174040
    Abstract: A light emitting device is provided. The light emitting device comprises: a reflective layer; and a semiconductor layer including a light emitting layer on the reflective layer. A distance between the reflective layer and a center of the light emitting layer corresponds to a constructive interference condition.
    Type: Grant
    Filed: January 21, 2009
    Date of Patent: May 8, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim