Abstract: Provided is a light emitting device. The light emitting device comprises a body, a light emitting diode on the body, a resistor integrated on the body and configured to sense a temperature of the light emitting diode, and a plurality of metal layers on the body.
Abstract: A light emitting device package is provided. The light emitting device package comprises a package body, a light emitting device on the package body, and a light-transmitting light guide member under the light emitting device.
Abstract: Disclosed are an epoxy resin composition and a light emitting apparatus. The epoxy resin composition includes a triazine derivative epoxy resin and an alicyclic epoxy resin.
Type:
Grant
Filed:
May 30, 2013
Date of Patent:
May 5, 2015
Assignee:
LG Innotek Co., Ltd.
Inventors:
Sung Bae Moon, Jae Hun Jeong, Sang In Yoon
Abstract: A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.
Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Abstract: Disclosed is a light emitting device including a light emitting structure comprising a first semiconductor layer, an active layer and a second semiconductor layer, a phosphor plate disposed on the second semiconductor layer, and a bonding portion disposed between the light emitting structure and the phosphor plate, the bonding portion bonding the phosphor plate to the light emitting structure.
Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a flat top surface and a plurality of concave regions from the flat top surface, a reflector within the concave regions of the first semiconductor layer, and a second semiconductor layer on the first semiconductor layer.
Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.
Abstract: A light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a refractive layer on the active layer, and a second conductive semiconductor layer on the refractive layer.
Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode on the light emitting structure; and a protection layer including a first metallic material on an outer peripheral region of one of the light emitting structure and the first electrode.
Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.
Abstract: Disclosed is a light emitting device package. The light emitting device package includes a body part provided therein with a cavity, a light emitting chip in the cavity, a cover part to cover the cavity, and a light conversion part provided on a bottom surface of the cover part while being separated from the light emitting chip.
Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.
Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
Abstract: A semiconductor light emitting device comprises a first nitride semiconductor layer comprising a plurality of concave portions, a reflector in at least one of the concave portions of the first nitride semiconductor layer, and a second nitride semiconductor layer on the first nitride semiconductor layer.
Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
Abstract: Disclosed is an LED package. The LED package comprises a body comprising a cavity at one side thereof, at least one of lead frames comprising a bottom frame and a sidewall frame in the cavity, and a light emitting device electrically connected with the lead frames.
Type:
Application
Filed:
April 17, 2008
Publication date:
April 29, 2010
Applicant:
LG INNOTEK CO., LTD.
Inventors:
Sung Min Kong, Choong Youl Kim, Hee Seok Choi
Abstract: A light-emitting device comprises a second conductive type semiconductor layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a nonconductive semiconductor layer on the first conductive type semiconductor layer, the nonconductive semiconductor layer comprising a light extraction structure.
Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.
Abstract: A light emitting device is provided. The light emitting device comprises: a reflective layer; and a semiconductor layer including a light emitting layer on the reflective layer. A distance between the reflective layer and a center of the light emitting layer corresponds to a constructive interference condition.