Search Patents
  • Patent number: 8835969
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: September 16, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Patent number: 8772816
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: July 8, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jae Joon Yoon
  • Patent number: 8530918
    Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity and formed in a transmittive material; a plurality of lead electrodes in the cavity; an isolation member disposed between the lead electrodes; a light emitting device electrically connected to the lead electrodes in the cavity; and a molding member on the light emitting device.
    Type: Grant
    Filed: November 16, 2010
    Date of Patent: September 10, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Won Jang
  • Patent number: 8384117
    Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having a trench, a metal layer within the trench, and a light emitting device over the metal layer.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: February 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Seon Song, Kyoung Woo Jo
  • Patent number: 8461609
    Abstract: A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: June 11, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Nam Seok Oh
  • Patent number: 8373193
    Abstract: Disclosed is a semiconductor light emitting device. The light emitting device includes a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; and a first electrode pad including a plurality of reflective layers on the first conductive type semiconductor layer.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd
    Inventors: Geun Ho Kim, Sung Kyoon Kim, Hee Seok Choi
  • Patent number: 9279546
    Abstract: The present invention relates to a lighting apparatus using LEDs as light sources and a display using the lighting apparatus, particularly, the present invention provides a lighting apparatus including: a plurality of light sources located on a printed circuit board; and a reflecting unit provided on the printed circuit board; and a spaced area provided inside the reflective unit.
    Type: Grant
    Filed: April 4, 2012
    Date of Patent: March 8, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Kwang Ho Park, Chul Hong Kim, Moo Ryong Park, Byoung Eon Lee
  • Patent number: 8659046
    Abstract: Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and a filler filling the trench.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: February 25, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Yun Kim
  • Publication number: 20090315050
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer, a second semiconductor layer, an active layer formed between the first semiconductor layer and the second semiconductor layer, a first reflective electrode on the first semiconductor layer to reflect incident light, and a second reflective electrode on the second semiconductor layer to reflect the incident light.
    Type: Application
    Filed: December 17, 2007
    Publication date: December 24, 2009
    Applicant: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Patent number: 8017965
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: September 13, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Patent number: 8809885
    Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers; and a light extraction structure on the light emitting structure. The light extraction structure comprises a plurality of first layers and a plurality of second layers which are alternately disposed with each other to have a negative refraction index.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: August 19, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Chil Lee, Sung Min Hwang
  • Patent number: 10446730
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: October 15, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jae Joon Yoon
  • Patent number: 7859003
    Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a plurality of compound semiconductor layers, a passivation layer at the outside of the light emitting structure, a first electrode layer on the light emitting structure, and a second electrode layer under the light emitting structure.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: December 28, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Patent number: 8791482
    Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body, a light emitting device installed in a cavity of the package body, an encapsulation layer to seal the light emitting device, and an electrode connected to the light emitting device. The package body includes a material having thermal conductivity lower than thermal conductivity of a material constituting the encapsulation layer.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: July 29, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Tae Won Seo
  • Patent number: 9577145
    Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a second electrode layer; a light emitting structure comprising a plurality of compound semiconductor layers under the second electrode layer; at least one dividing groove that divides inner areas of the lower layers of the light emitting structure into a plurality of areas; and a first electrode under the light emitting structure.
    Type: Grant
    Filed: August 6, 2009
    Date of Patent: February 21, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hwan Hee Jeong
  • Patent number: 8330180
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer, and an electrode layer comprising a conductive polymer on the second conductive semiconductor layer.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: December 11, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Kyoon Kim
  • Patent number: 8227823
    Abstract: The semiconductor light-emitting structure has a plurality of compound semiconductor layers; a current spreading layer comprising a multi-layered transparent electrode layer on the plurality of compound semiconductor layers and a metal layer between the transparent electrode layers; and a second electrode electrically connected to the current spreading layer.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: July 24, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jung Hyeok Bae
  • Patent number: 8354686
    Abstract: A light emitting device array is provided comprising a printed circuit board on which a plurality of electrode patterns having the same width is formed, a light emitting device package disposed on a predetermined number of electrode patterns and a power supply line disposed on at least one of the remaining electrode pattern except for the predetermined number of electrode patterns.
    Type: Grant
    Filed: May 13, 2011
    Date of Patent: January 15, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: HongBoem Jin, HanCheol Kim
  • Publication number: 20110169041
    Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.
    Type: Application
    Filed: January 9, 2009
    Publication date: July 14, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Duk Kyu Bae, Hyun Kyong Cho
  • Patent number: 10388840
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: August 20, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jae Joon Yoon