Search Patents
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8115230
    Abstract: Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an oxide including gallium aluminum over a gallium oxide substrate, a nitride including gallium aluminum over the oxide including gallium aluminum, and a light emitting structure over the nitride including gallium aluminum.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: February 14, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Light emitting device and light emitting device package
    Patent number: 8426887
    Abstract: Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: April 23, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyo Kun Son
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8373190
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device
    Patent number: 8587007
    Abstract: The embodiment relates to a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate, a plurality of convex portions protruding from a flat top surface of the substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. A circumferential surface of each convex portion includes a continuous spherical surface, and a height of the convex portion is about 1.5 ?m or less.
    Type: Grant
    Filed: June 29, 2011
    Date of Patent: November 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hosang Yoon, Daesung Kang, Jinsoo Park
  • Light emitting element and a production method therefor
    Patent number: 9059338
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer on the support substrate, a current spreading layer on the wafer bonding layer, a second conductive semiconductor layer on the current spreading layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, a surface modification layer on the first conductive semiconductor layer, and a first electrode layer on the surface modification layer.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: June 16, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: June O Song
  • Light emitting device and method for manufacturing the same
    Patent number: 7989834
    Abstract: A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: August 2, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park
  • Method for manufacturing gallium oxide based substrate, light emitting device, and method for manufacturing the light emitting device
    Patent number: 8125001
    Abstract: A light emitting device includes a gallium oxide based substrate, a gallium oxynitride based layer on the gallium oxide based substrate, a first conductivity-type semiconductor layer on the gallium oxynitride based layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: February 28, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Light emitting device package
    Patent number: 8890297
    Abstract: A light emitting device package according to embodiments comprises: a package body; a lead frame on the package body; a light emitting device supported by the package body and electrically connected with the lead frame; a filling material surrounding the light emitting device; and a phosphor layer comprising phosphors on the filling material.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: November 18, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yu Ho Won, Geun Ho Kim
  • Semiconductor light emitting device having a high resistive layer
    Patent number: 8637895
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Grant
    Filed: July 17, 2012
    Date of Patent: January 28, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Dae Sung Kang, Hyo Kun Son
  • Diode having high brightness and method thereof
    Patent number: 8674386
    Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
    Type: Grant
    Filed: March 29, 2011
    Date of Patent: March 18, 2014
    Assignee: LG Innotek Co. Ltd.
    Inventor: Myung Cheol Yoo
  • Nitride semiconductor light emitting device and method for fabricating the same
    Patent number: 8093625
    Abstract: Disclosed is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a buffer layer having a super-lattice layer on a silicon substrate, a first conductive clad layer on the buffer layer, an active layer on the first conductive clad layer, and a second conductive clad layer on the active layer.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: January 10, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Kyun Shim
  • Semiconductor light-emitting device
    Patent number: 8766308
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: July 1, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Woo Sik Lim
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110101413
    Abstract: Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate.
    Type: Application
    Filed: March 19, 2009
    Publication date: May 5, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: June O Song
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20100065872
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Application
    Filed: June 18, 2008
    Publication date: March 18, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Sang Youl Lee
  • Semiconductor device having a plurality of bonding layers
    Patent number: 8487341
    Abstract: Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: July 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Semi-conductor light-emitting device
    Patent number: 8530919
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
    Type: Grant
    Filed: May 15, 2009
    Date of Patent: September 10, 2013
    Assignee: LG Innotek, Co., Ltd.
    Inventor: Woo Sik Lim
  • Semiconductor light emitting device having roughness and method of fabricating the same
    Patent number: 7829881
    Abstract: A semiconductor light emitting device including a first electrode contact layer, an active layer formed on the first electrode contact layer, a second electrode contact layer formed on the active layer, and a first roughness layer formed on at least one of the first and second electrode contact layers.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: November 9, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ho Sang Yoon
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME
    Publication number: 20100224899
    Abstract: Provided are a light emitting device, a light emitting device package and a lighting system including the same. The light emitting device (LED) comprises a substrate, a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer and a first electrode. The vertical distances between the first conductive type semiconductor layer and the second conductive type semiconductor layer are varied.
    Type: Application
    Filed: March 3, 2010
    Publication date: September 9, 2010
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jeung Mo Kang, Du Hyun Kim, Jae Wook Kim, Jeong Hyeon Choi
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8222660
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: July 17, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device package and light unit having the same
    Patent number: 8395170
    Abstract: A light emitting structure includes a package body including a conductive material, a nonconductive layer formed on a surface of the package body, a plurality of electrodes on the nonconductive layer, a plurality of protrusions from the electrodes, a light emitting device mounted to a plane of the package body and connected to the electrodes, and a transmissive resin member to encapsulate the light emitting device wherein at least the plane of the package body other than where the light emitting device is seated is substantially flat.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: March 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hye Young Kim