Search Patents
  • LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND ILLUMINATION SYSTEM
    Publication number: 20140306178
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first semiconductor layer, a second semiconductor layer on the active layer, and an electrode layer on the second semiconductor layer. A top surface of a first barrier layer adjacent to the second semiconductor layer includes an uneven surface and has a larger area than an area of a top surface of a second barrier layer, wherein the first barrier layer has a thickness thicker than a thickness of the second barrier layer.
    Type: Application
    Filed: June 26, 2014
    Publication date: October 16, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Oh Min KWON, Jong Pil JEONG
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20140191190
    Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
    Type: Application
    Filed: March 12, 2014
    Publication date: July 10, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Tae Yun KIM, Hyo Kun SON
  • Growth substrate and light emitting device
    Patent number: 8497493
    Abstract: Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: July 30, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jeong Sik Lee
  • Semiconductor light emitting device having one or more recesses on a layer
    Patent number: 8648355
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate; a light emitting structure comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the substrate; an electrode layer on the second conductive semiconductor layer; and an electrode on the electrode layer, wherein the substrate comprises a plurality of convex portions, wherein the electrode layer comprises a plurality of holes corresponding to a region of at least one of the plurality of convex portions of the substrate, wherein an insulating material is disposed in the plurality of holes on the light emitting structure.
    Type: Grant
    Filed: August 9, 2012
    Date of Patent: February 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Choi
  • Nitride semiconductor light emitting device and method of manufacturing the same
    Patent number: 8421100
    Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Light-emitting diode, light-emitting diode package, and lighting system including same
    Patent number: 10199534
    Abstract: A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: February 5, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • Light-emitting element and a production method therefor
    Patent number: 8471239
    Abstract: Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: June 25, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20130228748
    Abstract: A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
    Type: Application
    Filed: April 17, 2013
    Publication date: September 5, 2013
    Applicant: LG Innotek Co., Ltd.
    Inventors: Tae Yun KIM, Hyo Kun SON
  • Semiconductor light emitting device having conductive substrate
    Patent number: 8232570
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light emitting device
    Patent number: 8008672
    Abstract: A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: August 30, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Yong Tae Moon, Chunli Liu
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20150137070
    Abstract: Provided are a semiconductor light emitting device. The semiconductor light emitting device comprises a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; third semiconductor layer disposed on the second semiconductor layer; and a fourth semiconductor layer disposed on the third semiconductor layer. The second semiconductor layer is formed of an InAlGaN semiconductor layer, the third semiconductor layer is formed of an AlGaN semiconductor layer, and the fourth semiconductor layer is formed of a GaN semiconductor layer.
    Type: Application
    Filed: December 19, 2014
    Publication date: May 21, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Dae Sung KANG, Hyo Kun SON
  • GALLIUM NITRIDE BASED LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
    Publication number: 20140138621
    Abstract: A light emitting device including a substrate, a first conductive type semiconductor layer on the substrate, at least one InxGa1?xN layer (0<x<0.2) on the first conductive type semiconductor layer, at least one GaN layer directly on the at least one InxGa1?N layer (0<x<0.2), an active layer on the at least one GaN layer, a second conductive type semiconductor layer on the active layer, and a transparent ITO (Indium-Tin-Oxide) layer on the second conductive type semiconductor layer.
    Type: Application
    Filed: January 28, 2014
    Publication date: May 22, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Seong Jae KIM
  • Growth substrate and light emitting device
    Patent number: 8686399
    Abstract: Disclosed are a growth substrate and a light emitting device. The light emitting device includes a silicon substrate, a first buffer layer disposed on the silicon substrate and having an exposing portions of the silicon substrate, a second buffer layer covering the first buffer layer and the exposed portions of the silicon substrate, wherein the second buffer layer is formed of a material causing a eutectic reaction with the silicon substrate, a third buffer layer disposed on the second buffer layer, and a light emitting structure disposed on the third buffer layer, and the second buffer layer includes voids.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: April 1, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jeong Sik Lee
  • Luminous element
    Patent number: 8884321
    Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer over the first conductive semiconductor layer; a second conductive semiconductor layer over the active layer; a bonding layer over the second conductive semiconductor layer; a schottky diode layer over the bonding layer; an insulating layer for partially exposing the bonding layer, the schottky diode layer, and the first conductive semiconductor layer; a first electrode layer electrically connected to both of the first conductive semiconductor layer and the schottky diode layer; and a second electrode layer electrically connected to the bonding layer.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: November 11, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O. Song
  • NITRIDE SEMICONDUCTOR LED AND FABRICATION METHOD THEREOF
    Publication number: 20110042645
    Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1?xN layer formed on the first electrode layer; an active layer formed on the InxGa1?xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.
    Type: Application
    Filed: November 1, 2010
    Publication date: February 24, 2011
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Suk Hun Lee
  • Light emitting device and light emitting device package including the same
    Patent number: 9299884
    Abstract: Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: March 29, 2016
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jong Hak Won, Jeong Sik Lee
  • Light emitting device, light emitting device package and lighting system having the same
    Patent number: 8373178
    Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Sung Kyoon Kim, Woo Sik Lim, Myeong Soo Kim, Sung Ho Choo
  • Light emitting device
    Patent number: 8866173
    Abstract: A light emitting device according to the embodiment may include a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; an electrode on the light emitting structure; a protection layer under a peripheral region of the light emitting structure; and an electrode layer under the light emitting structure, wherein the protection layer comprises a first layer, a second layer, and a third layer, wherein the first layer comprises a first metallic material, and wherein the second layer is disposed between the first layer and the third layer, the second layer has an insulating material or a conductive material.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: October 21, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • LIGHT EMITTING DEVICE FOR IMPROVING A LIGHT EMISSION EFFICIENCY
    Publication number: 20140209860
    Abstract: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.
    Type: Application
    Filed: April 2, 2014
    Publication date: July 31, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Hyo Kun SON
  • Nitride semiconductor LED and fabrication method thereof
    Patent number: 7847279
    Abstract: A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGa1-xN layer formed on the first electrode layer; an active layer formed on the InxGa1-xN layer; a first P—GaN layer formed on the active layer; a second electrode layer formed on the first P—GaN layer; a second P—GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P—GaN layer.
    Type: Grant
    Filed: July 6, 2005
    Date of Patent: December 7, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee