Search Patents
  • Light emitting device and method for manufacturing the same
    Patent number: 8269224
    Abstract: Disclosed are a light emitting device and a method for manufacturing the same. The light emitting device includes a substrate having a lead frame, a light emitting diode mounted on the substrate, a mold member formed on the substrate and the light emitting diode, and a reflecting member having an opening portion at one side thereof and being inclined at an outer portion of the mold member.
    Type: Grant
    Filed: December 9, 2010
    Date of Patent: September 18, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bo Geun Park
  • Light-emitting device and lighting apparatus
    Patent number: 10886436
    Abstract: A light-emitting device may include a light-emitting structure, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer. The first electrode may include a first pad, and a first branch coupled to the first pad and extending in a longitudinal direction. The second electrode may include a second pad, and a third branch and a fourth branch that are connected to the second pad and extend from the second pad.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: January 5, 2021
    Assignee: LG INNOTEK CO., LTD.
    Inventors: MinGyu Na, SungKyoon Kim, SungHo Choo, WooSik Lim
  • Semi-conductor light-emitting device
    Patent number: 8530919
    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
    Type: Grant
    Filed: May 15, 2009
    Date of Patent: September 10, 2013
    Assignee: LG Innotek, Co., Ltd.
    Inventor: Woo Sik Lim
  • Semiconductor light emitting device and light emitting apparatus having the same
    Patent number: 8058666
    Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: November 15, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyung Jun Kim, Hyo Kun Son
  • Light emitting device
    Patent number: 8115224
    Abstract: A light emitting device That includes a first photonic crystal structure having a reflective layer and non-metal pattern elements on the reflective layer, a second conductive semiconductor layer on both the reflective layer and the non-metal pattern elements, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer.
    Type: Grant
    Filed: October 5, 2009
    Date of Patent: February 14, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sun Kyung Kim
  • Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
    Patent number: 8513697
    Abstract: A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a first electrode on the first conductive semiconductor layer; a transparent electrode layer on the second conductive semiconductor layer; and a second electrode on the transparent electrode layer, where the second electrode is anchored to the transparent electrode.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: August 20, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Wook Park
  • Light emitting device
    Patent number: 7947972
    Abstract: Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: May 24, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong-Tae Moon
  • Apparatus and method for driving LED
    Patent number: 7791498
    Abstract: Provided are an apparatus and method for driving LEDs. The apparatus comprise a plurality of red, green, and blue light emitting diodes connected, respectively; switching units turned on or off by an inputted pulse to turn on or off the red, green and blue light emitting diodes, respectively; and a control unit outputting respective pulses to sequentially delay a turn-on or turn-off time between the switching units.
    Type: Grant
    Filed: January 10, 2007
    Date of Patent: September 7, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Seong Soo Park
  • Semiconductor light emitting device having a reflective electrode layer that includes a first part in contact with an under surface of an electrode layer and a second part apart from the electrode layer
    Patent number: 8253152
    Abstract: A semiconductor light emitting device that includes: a light emitting structure; a light transmitting layer under a second portion of the light emitting structure; and a reflective electrode layer electrically connected to the light emitting structure, a portion of the reflective electrode layer being disposed unparallel to the light emitting structure.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: August 28, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Light emitting device, light emitting device package, and lighting system including the same
    Patent number: 8373190
    Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system including the light emitting device and the light emitting device package. The light emitting device includes a light emitting structure, a dielectric, a second electrode layer, a semiconductor region, and a first electrode. The light emitting device includes a plurality of semiconductor layers that form a heterojunction that produces light and a homojunction that protects the device from a reverse current.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: February 12, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sung Min Hwang
  • Semiconductor light emitting device
    Patent number: 8168987
    Abstract: The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: May 1, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device package
    Patent number: 8410513
    Abstract: Provided is a light emitting device package. The light emitting device package comprises a first conductive type package body, an insulating layer comprising an opening on the package body, a plurality of compound semiconductor layers disposed on the package body through the opening of the insulating layer, an electrode electrically connected to the plurality of compound semiconductor layers, a first metal layer electrically connected to the package body and disposed on a part of the insulating layer, and a second metal layer electrically connected to the electrode and disposed on the other part of the insulating layer.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: April 2, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bum Chul Cho
  • Light-emitting device and method for manufacturing the same
    Patent number: 8405095
    Abstract: The embodiment is to provide a light emitting device and a method for manufacturing the same, in which the light emitting device includes a first conductive semiconductor layer; an active layer formed on the first conductive semiconductor layer; a second conductive semiconductor layer formed on the active layer; and a phosphor layer formed on the second conductive semiconductor layer; in which the phosphor layer includes a phosphor receiving member including a plurality of cavities and phosphor particles fixed in the cavities.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: March 26, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Jang Kee Youn
  • Light emitting device
    Patent number: 7977683
    Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure comprising an active layer to generate first light, a first conductive semiconductor layer on the active layer, and a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers, wherein a portion of the light emitting structure is implanted with at least one element which generates second light from the first light.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: July 12, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Tae Moon
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8278646
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: October 2, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Light emitting device package
    Patent number: 8344400
    Abstract: Embodiments relate to a light emitting device package. The light emitting device package comprises: a body comprising a multilayer cavity; a light emitting device in the cavity; a first phosphor layer sealing the light emitting device and comprising a first phosphor; and a second phosphor layer comprising a second phosphor on the first phosphor layer, the second phosphor and the first phosphor having a difference in the specific gravity.
    Type: Grant
    Filed: August 26, 2008
    Date of Patent: January 1, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Choong Youl Kim, Hyeong Seok Im, Joong In An
  • Light emitting device, light emitting device package and lighting system
    Patent number: 8530882
    Abstract: A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting structure. A filling factor, which is an area ratio of the first electrode relative to an area of a top surface of the light emitting structure, may be 20% or less.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: September 10, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jeung Mo Kang, Sun Kyung Kim
  • Semiconductor light emitting device having conductive substrate
    Patent number: 8232570
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a p-type substrate, a p-type semiconductor layer, an active layer, and an n-type semiconductor layer. The p-type semiconductor layer is formed on the p-type substrate. The active layer is formed on the p-type semiconductor layer. The n-type semiconductor layer is formed on the active layer.
    Type: Grant
    Filed: June 23, 2008
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Jun Kim
  • Light emitting device and phosphor for the same
    Patent number: 7531956
    Abstract: Provided is a light emitting device including a light emitting chip, and a phosphor through which a light emitting from the light emitting chip at least partially passes such that the light is converted into lights having at least two different wavelengths and emitted. The light emitting device emits white light using the phosphor.
    Type: Grant
    Filed: April 7, 2005
    Date of Patent: May 12, 2009
    Assignees: LG Innotek Co., Ltd., Korea Research Institute of Chemical Technology
    Inventors: Chang-Hae Kim, Joung-Kyu Park, Sang-Kee Kim, Choong-Youl Kim
  • Light emitting device package and lighting system
    Patent number: 9035325
    Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: May 19, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Yong Seon Song, Jung Ha Hwang