Abstract: The present invention discloses a light emitting package, comprising: a base; a light emitting device on the base; an electrical circuit layer electrically connected to the light emitting device; a gold layer on the electrical circuit layer; a wire electrically connected between the light emitting device and the gold layer; a screen member having an opening and disposed on the base adjacent to the light emitting device; and a lens covering the light emitting device, wherein a bottom surface of the screen member is positioned higher than the light emitting device, and wherein an entire uppermost surface of the screen member is in contact with the lens.

Abstract: A light emitting device array includes a first supporting member, at least two bonding layers disposed on the first supporting member, a second supporting member disposed on each of the at least two bonding layers, a light emitting structure disposed on the second supporting member, the light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and a first electrode disposed on the light emitting structure.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a body including a cavity, at least one light emitting device in the cavity, a resin member filled in the cavity while covering the light emitting device, and a reflective layer on a lateral side of the cavity. The reflective layer is formed while opening the upper region of the cavity. The reflective layer is selectively formed only in a lower region of the lateral side of the cavity in the body, and the resin member, which is filled in the upper portion of the cavity, directly adheres to the body. The air-tightness between the resin member and the body is improved.

Abstract: Disclosed is a touch window including a substrate, an electrode part on the substrate, a wire electrically connected with the electrode part, a wire pad to connect the wire with the electrode part, and a reinforcement electrode making contact with the wire pad. Provided is a touch device including a touch window, and a driving unit on the touch window, in which the touch window includes an electrode part to sense a position, a wire electrically connected with the electrode part, a wire pad to connect the wire with the electrode part, and a reinforcement electrode making contact with the wire pad.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first chip structure including a first reflective layer and a first light emitting structure having a plurality of compound semiconductor layers on the first reflective layer; a second chip structure bonded onto the first chip structure and including a second reflective layer and a second light emitting structure having a plurality of compound semiconductor layers on the second reflective layer; and an electrode on the second chip structure.

Abstract: A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.

Abstract: Provided is a light emitting device, which includes a second conductive type semiconductor layer, an active layer, a first conductive type semiconductor layer, and a intermediate refraction layer. The active layer is disposed on the second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed on the active layer. The intermediate refraction layer is disposed on the first conductive type semiconductor layer. The intermediate refraction layer has a refractivity that is smaller than that of the first conductive type semiconductor layer and is greater than that of air.

Abstract: Disclosed is a light emitting device comprising a plurality of light emitting cells, and a bridge electrode electrically connecting two adjacent light emitting cells, and the plurality of light emitting cells comprise a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode on the first conductive semiconductor layer and a second electrode on the second conductive semiconductor layer, wherein the bridge electrode has a part thicker than the first electrode and the second electrode.

Abstract: A light emitting device improves light extraction efficiency and may be individually driven in a light emitting device package and/or a light unit. The light emitting device may include first and second light emitting structures. The light emitting structure may include a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor under the first active layer. The second light emitting structure may include a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer.

Abstract: Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each of the first reflective frame and the second reflective frame comprises a bottom frame and at least two side wall frames extending from the bottom frame; and a light emitting device on the first reflective frame, wherein the first reflective frame and the second reflective frame are electrically separated from each other.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: A light emitting device includes a first semiconductor layer of a first conductivity type, an active layer adjacent to the first semiconductor layer, a second semiconductor layer of a second conductivity type and provided adjacent to the active layer, and a passivation layer provided on a side surface of the active layer. The passivation layer may be a semiconductor layer of one of the first conductivity type, the second conductivity type or a first undoped semiconductor layer. A first electrode may be coupled to the first semiconductor layer and a second electrode may be coupled to the second semiconductor layer.

Abstract: A light emitting device include a first lead frame including a first bonding region and a second lead frame including a second bonding region. A gap is provided between the first and second lead frames. A first body is coupled to the first and second lead frames and includes an open region exposing the first and second bonding regions. A second body is coupled onto the first body and includes a first opening on the open region of the first body. A light emitting chip is provided on the second bonding region of the second lead frame, and a transmissive resin layer surrounds the light emitting chip in the open region of the first body and the first opening of the second body.

Abstract: Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer.

Abstract: Disclosed is a light emitting device including, a light emitting structure that has a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein the active layer is provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and includes a plurality of well layers and at least one barrier layer, wherein the barrier layer includes a first nitride layer and a second nitride layer provided on the first nitride layer, and wherein the first nitride layer has a larger energy band gap than the second nitride layer while the energy band gap of the second nitride layer is larger than that of each well layer.

Abstract: Disclosed are a light emitting device package and a lighting system in which the light emitting device package includes a first cavity in a first region of the body, a second cavity in a second region of the body, first and second lead frames spaced apart from each other in the first cavity, a third lead frame spaced apart from the second lead frame in the second cavity, a first light emitting device on the first and second lead frames in the first cavity, a second light emitting device on the second and third lead frames in the second cavity, and a molding member in the first and second cavities.

Abstract: Provided is a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes a package main body with a cavity, a plurality of light emitting diode chips, a wire, and a plurality of lead frames. The plurality of light emitting diode chips are mounted in the cavity. The wire is connected to an electrode of at least one light emitting diode chip. The plurality of lead frames are formed in the cavity, and at least one lead frame is electrically connected to the light emitting diode chip or a plurality of wires.

Abstract: A semiconductor light emitting device and corresponding method of manufacture, where the semiconductor light emitting device includes a light emitting structure, a second electrode layer, an insulating layer, and a protrusion. The light emitting structure comprises a second conductive semiconductor layer, an active layer under the second conductive semiconductor layer, and a first conductive semiconductor layer under the active layer. The second electrode layer is formed on the light emitting structure. The insulating layer is formed along the circumference of the top surface of the light emitting structure. The protrusion protrudes from the undersurface of the insulating layer to the upper part of the first conductive semiconductor layer.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.