Search Patents
  • Semiconductor light emitting device and light emitting apparatus having the same
    Patent number: 8058666
    Abstract: A semiconductor light emitting device and a light emitting apparatus having the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate, a light emitting structure on the substrate, comprising a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a first electrode unit on sidewalls of the substrate and the first conductive type semiconductor layer.
    Type: Grant
    Filed: August 8, 2008
    Date of Patent: November 15, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kyung Jun Kim, Hyo Kun Son
  • Light emitting module
    Patent number: 9478526
    Abstract: Disclosed herein is a light emitting module. The light emitting module according to an exemplary embodiment includes a circuit board having a cavity and including a circuit pattern at a region which does not have the cavity, an insulation substrate disposed in the cavity while being formed, at an upper portion thereof, with at least one pad, and at least one light emitting device disposed on the pad, wherein a joining structure is disposed between a bottom surface of the cavity and a bottom surface of the insulation substrate.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: October 25, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Gun Kyo Lee, Jong Woo Lee, Yun Min Cho
  • Semiconductor light emitting device
    Patent number: 8421101
    Abstract: Provided are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a first electrode on an region of top surface of a first conductive semiconductor layer; a second electrode layer under a second conductive semiconductor layer; and a conductive support member under the second electrode layer, wherein the second conductive semiconductor layer includes a plurality of recesses on a lower portion of the second conductive semiconductor layer, wherein the second electrode layer has an uneven structure corresponding to the plurality of recesses.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: April 16, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park
  • Light emitting device and method for fabricating the same
    Patent number: 8916883
    Abstract: A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; a reflective layer formed under the light emitting structure; and a transparent supporting layer formed between the light emitting structure and the reflective layer, to emit a light generated from the active layer; and a conductive layer formed under the reflective layer, to surround the reflective layer.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: December 23, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hwan Hee Jeong, Sang Youl Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8278646
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: October 2, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8969849
    Abstract: Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
    Type: Grant
    Filed: March 9, 2014
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20110121261
    Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
    Type: Application
    Filed: December 29, 2010
    Publication date: May 26, 2011
    Applicant: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device and method of fabricating the same
    Patent number: 8994053
    Abstract: Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: March 31, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Sang Youl Lee
  • Nitride semiconductor light emitting device and fabrication method thereof
    Patent number: 8704250
    Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: April 22, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Semiconductor light emitting device
    Patent number: 8168987
    Abstract: The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer peripheral portion of the first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a second electrode layer on the second conductive semiconductor layer.
    Type: Grant
    Filed: February 12, 2010
    Date of Patent: May 1, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Nitride semiconductor light-emitting device and method for manufacturing the same
    Patent number: 7868350
    Abstract: Provided is a nitride semiconductor light-emitting device. The device includes a buffer layer, a first conduction type semiconductor layer, an active layer, and a second conduction type semiconductor layer. The buffer layer comprises amorphous metal. The first conduction type semiconductor layer is on the buffer layer, and the active layer is on the first conduction type semiconductor layer. The second conduction type semiconductor layer is on the active layer.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: January 11, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hee-Jin Kim
  • Light emitting device and light emitting device package
    Patent number: 9312450
    Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first electrode, a light emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer on the first electrode, a nano-tube layer including a plurality of carbon nano tubes on the light emitting structure, and a second electrode on the light emitting structure.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: April 12, 2016
    Assignee: LG Innotek Co., Ltd.
    Inventors: Kwang Ki Choi, Hwan Hee Jeong, Sang Youl Lee, June O Song, Ji Hyung Moon
  • Semiconductor light emitting device and method of manufacturing the same
    Patent number: 8946677
    Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
    Type: Grant
    Filed: January 6, 2014
    Date of Patent: February 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Dae Sung Kang, Hyo Kun Son
  • Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
    Patent number: 9012944
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: April 21, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device
    Patent number: 8193536
    Abstract: A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a first electrode on the light emitting structure; and a photon escape layer on the light emitting structure. Further, the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure such that an escape probability for photons emitted by the light emitting structure is increased.
    Type: Grant
    Filed: January 25, 2010
    Date of Patent: June 5, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyun Don Song
  • Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby
    Patent number: 7713770
    Abstract: A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.
    Type: Grant
    Filed: September 27, 2006
    Date of Patent: May 11, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Dae Sung Kang
  • Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer
    Patent number: 8563999
    Abstract: A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a plurality of clusters on the uneven part, a first substrate layer on the nonconductive layer, and a light emitting structure layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer on the first substrate layer.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: October 22, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Ho Sang Yoon, Sang Kyun Shim
  • Light emitting device and light emitting device array
    Patent number: 9236526
    Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: January 12, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Byung Yeon Choi, Hee Young Beom, Yong Gyeong Lee, Ji Hwan Lee, Hyun Seoung Ju, Gi Seok Hong
  • Light emitting device, light emitting device package and illumination system
    Patent number: 8796705
    Abstract: A light emitting device is provided. The light emitting device includes a first conductive type semiconductor layer, an active layer including a plurality of well layers and a plurality of barrier layers on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. An upper surface of at least first barrier layer among the barrier layers includes an uneven surface. The first barrier layer is disposed more closely to the second conductive type semiconductor layer than to the first conductive type semiconductor layer.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: August 5, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Oh Min Kwon, Jong Pil Jeong
  • Light-emitting element and a production method therefor
    Patent number: 8471239
    Abstract: Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.
    Type: Grant
    Filed: April 23, 2009
    Date of Patent: June 25, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song