Search Patents
  • Light emitting device and method of manufacturing the same
    Patent number: 10749092
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: August 18, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jae Joon Yoon
  • Light emitting device package
    Patent number: 8044423
    Abstract: Provided is a light emitting device package. The light emitting device package comprises a base substrate, a frame, and a light emitting device. The base substrate comprises a plurality of electrode pads. The frame is formed of silicon, attached on the base substrate, and has an opening. The light emitting device is electrically connected to the electrode pad in the opening.
    Type: Grant
    Filed: June 2, 2010
    Date of Patent: October 25, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Yong Seok Choi
  • Light emitting device and method of manufacturing the same
    Patent number: 9461223
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: October 4, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jae Joon Yoon
  • LIGHT EMITTING DEVICE PACKAGE
    Publication number: 20140332839
    Abstract: A light emitting device package includes a body having a cavity therein and first and second recesses inside the cavity of the body. The first and second electrode layers are provided in the first and second recesses, and a light emitting device is provided on the first and second electrode layers. The first and second bumps are provided under the light emitting device and attached to the first and second recesses.
    Type: Application
    Filed: May 1, 2014
    Publication date: November 13, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Byeong Kyun CHOI, Jae Won SEO, Sung Ho CHOO
  • Light emitting device
    Patent number: 8575638
    Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, an insulating layer contacting a lower surface of the light emitting structure, and a protective layer disposed beneath the light emitting structure, and formed with a pattern at which the insulating layer is arranged.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: November 5, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: HwanHee Jeong
  • Light-emitting diode package and manufacturing method thereof
    Patent number: 7745844
    Abstract: An LED package is provided. The LED package comprises a metal plate, circuit patterns, and an LED. The metal plate comprises grooves. The insulating layer is formed on the metal plate. The circuit patterns are formed on the insulating layer. The LED is electrically connected with the circuit pattern on the insulating layer.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: June 29, 2010
    Assignee: LG Innotek Co., Ltd.
    Inventor: Kyung Ho Shin
  • Vertical semiconductor light emitting device including a capacitor
    Patent number: 8362514
    Abstract: A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a part of an upper surface of the light emitting structure, and a pad electrode over the first dielectric layer.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: January 29, 2013
    Assignee: LG Innotek, Co., Ltd.
    Inventor: Sung Min Hwang
  • Light emitting device and method of manufacturing the same
    Patent number: 9035348
    Abstract: Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body and a second electrode separated from the first electrode, a light emitting chip formed on one of the first and second electrodes, and electrically connected to the first and second electrodes, and a protective cap projecting between the first and second electrodes.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: May 19, 2015
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Jae Joon Yoon
  • Light emitting device package and method of manufacturing the same
    Patent number: 8624268
    Abstract: A light emitting device package is provided. The light emitting device package comprises a substrate comprising a plurality of protrusions, an insulating layer on the substrate, a metal layer on the insulating layer, and a light emitting device on the substrate electrically connected to the metal layer.
    Type: Grant
    Filed: July 23, 2008
    Date of Patent: January 7, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Bum Chul Cho, Jin Soo Park
  • Light emitting device, method for manufacturing light emitting device, and light emitting apparatus
    Patent number: 7956376
    Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: June 7, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device
    Patent number: 8039863
    Abstract: Provided is a light emitting device. The light emitting device comprises a package body, a plurality of electrodes, a light emitting diode, and a lens. The package body comprises a trench. The plurality of electrodes is disposed on and/or in the package body. The light emitting diode is disposed on the package body and is electrically connected to the electrodes. The lens is disposed on an inner side of the trench.
    Type: Grant
    Filed: May 6, 2009
    Date of Patent: October 18, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Bum Chul Cho
  • Light emitting element and a production method therefor
    Patent number: 8455276
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a growth substrate, a first conductive semiconductor layer on the growth substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an ohmic contact layer having a concavo-convex structure on the second conductive semiconductor layer.
    Type: Grant
    Filed: May 4, 2009
    Date of Patent: June 4, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventor: June O Song
  • Semiconductor light emitting device
    Patent number: 8253156
    Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a IH-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: August 28, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park
  • LIGHT EMITTING DEVICE
    Publication number: 20120049230
    Abstract: A light emitting device is disclosed. The disclosed light emitting device includes a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, an insulating layer contacting a lower surface of the light emitting structure, and a protective layer disposed beneath the light emitting structure, and formed with a pattern at which the insulating layer is arranged.
    Type: Application
    Filed: October 27, 2011
    Publication date: March 1, 2012
    Applicant: LG INNOTEK CO., LTD.
    Inventor: HwanHee JEONG
  • LIGHT EMITTING DEVICE PACKAGE INCLUDING A SUBSTRATE HAVING AT LEAST TWO RECESSED SURFACES
    Publication number: 20140008696
    Abstract: Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate.
    Type: Application
    Filed: September 9, 2013
    Publication date: January 9, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Geun-Ho KIM, Yu Ho WON
  • LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110018021
    Abstract: Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and a filler filling the trench.
    Type: Application
    Filed: July 15, 2010
    Publication date: January 27, 2011
    Applicant: LG Innotek Co., Ltd.
    Inventor: Tae Yun KIM
  • Semiconductor light emitting device
    Patent number: 8232569
    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a conductive supporting member, an N-type semiconductor layer on the conductive supporting member; an active layer on the N-type semiconductor layer, a P-type semiconductor layer on the active layer, an ohmic contact layer on the P-type semiconductor layer, and an electrode on the ohmic contact layer.
    Type: Grant
    Filed: November 24, 2009
    Date of Patent: July 31, 2012
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hwan Hee Jeong
  • Light emitting device module
    Patent number: 9768363
    Abstract: Embodiments provide a light emitting device module including a circuit board, a light emitting device bonded to a conductive layer on the circuit board via a conductive adhesive, a phosphor layer disposed on a side surface and an upper surface of the light emitting device, and a lens on the circuit board and the phosphor layer. A void is generated between the light emitting device and the circuit board.
    Type: Grant
    Filed: June 1, 2015
    Date of Patent: September 19, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dong Yong Lee, Yong Jae Lee
  • Light emitting device
    Patent number: 8399901
    Abstract: Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.
    Type: Grant
    Filed: January 9, 2009
    Date of Patent: March 19, 2013
    Assignee: LG Innotek Co., Ltd.
    Inventors: Duk Kyu Bae, Hyun Kyong Cho
  • Semiconductor light emitting device
    Patent number: 8969902
    Abstract: Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.
    Type: Grant
    Filed: July 5, 2013
    Date of Patent: March 3, 2015
    Assignee: LG Innotek Co., Ltd.
    Inventor: Hyung Jo Park